Semiconductor Injection Lasers Research Articles

Statistical properties for an optically injected chaotic semiconductor laser with a high-pass filter.

Chaotic waveforms with Gaussian distributions are significant for laser-chaos-based applications such as random number generation. By exploring the injection parameter space of the optical injection semiconductor lasers, we numerically investigate the associated probability density functions of the generated chaotic waveforms when different high-pass filters with different cutoff frequencies are used. Our results demonstrate that the chaotic waveforms with Gaussian probability density functions can be obtained once the cutoff frequency of the high-pass filter is larger than the laser relaxation resonance frequency. Especially, we find that the Gaussian probability density function can reach a superhigh coefficient of determination R2 ≥ 99.5% and an ultralow skewness |S|<0.1 in a large parameter space by jointly controlling the injection parameter and cutoff frequency.

Enhanced extreme events in three cascade-coupled semiconductor lasers

Extreme events (EEs) are rare and unpredictable, as have been observed in nature. Up to now, manipulating EEs has remained a challenge. Here, we experimentally observe the enhancement of EEs in a three cascade-coupled semiconductor laser system. Specifically, a continuous-wave optical injection semiconductor laser acts as the chaotic source with rare EEs, which is subsequently injected into a second laser for increasing the number of EEs. Interestingly, we find that the number and region size of EEs can be further enhanced by sequentially injecting into a third laser, i.e., a cascade-injection structure. Our experimental observations are in good agreement with the numerical results, which indicate that EEs can be significantly enhanced in wide injection parameter space due to the cascade-injection effect. Furthermore, our simulations show that the evoluation of the regions with enhanced EEs may be associated with the noise considered.

Multimode Generation of Light in an Injection Semiconductor Laser Based on a Chiral AlAs/(Al,Ga)As/GaAs Microcavity

Multimode Generation of Light in an Injection Semiconductor Laser Based on a Chiral AlAs/(Al,Ga)As/GaAs Microcavity

Signal Recognition and Location of Distributed Optical Fiber Vibration Sensing System Using Reservoir Computing Based on Mutually Injected Semiconductor Lasers

Signal Recognition and Location of Distributed Optical Fiber Vibration Sensing System Using Reservoir Computing Based on Mutually Injected Semiconductor Lasers

Frequency Pulling and the Linewidth Enhancement Factor in Optically Injected Semiconductor Laser

The effect of the linewidth enhancement factor (LEF) on the frequency pulling behavior in optically injected lasers is theoretically investigated. The frequency pulling is found to be exponentially dependent on the LEF. This dependence is systematically revealed and explained.

Temperature Dependence of Circularly Polarized Radiation of an Injection Semiconductor Laser

Temperature Dependence of Circularly Polarized Radiation of an Injection Semiconductor Laser

Temperature Dependence of Circularly Polarized Emissions of Chiral Injection Semiconductor Lasers

Temperature Dependence of Circularly Polarized Emissions of Chiral Injection Semiconductor Lasers

Effects of the linewidth enhancement factor on the microwave linewidth of the period-one oscillations of optically injected semiconductor lasers.

We investigate the microwave linewidth of the period-one (P1) nonlinear dynamics of an optically injected semiconductor laser as a function of the linewidth enhancement factor. Under proper conditions of optical injection, the destabilizing effect of a large value of the linewidth enhancement factor of the injected semiconductor laser is found to be unexpectedly suppressed in the P1 oscillation of the laser, thus resulting in a narrow P1 linewidth equal to that generated by a laser of a small linewidth enhancement factor. By properly choosing the operating point, P1 oscillations with microwave linewidths that are an order of magnitude narrower than the free-running optical linewidths of the master and slave lasers are observed.

Broadband Tunable Microwave Frequency Comb Generation Based on Modulated Optical Injection Semiconductor Laser

Broadband Tunable Microwave Frequency Comb Generation Based on Modulated Optical Injection Semiconductor Laser

Wide Tuning Integrated Optoelectronic Oscillator Based on Direct Modulation Optical Signal Injection Semiconductor Laser

Wide Tuning Integrated Optoelectronic Oscillator Based on Direct Modulation Optical Signal Injection Semiconductor Laser

A Semiconductor Injection Laser with Circularly Polarized Radiation

Measurements are made of the spectra and degrees of circular polarization of radiation from single InAs quantum dots embedded in a planar GaAs waveguide of a semiconductor nanostructure, and an electrically pumped semiconductor laser based on an AlAs/AlGaAs microcavity with GaAs quantum wells in the active region. The upper layers of the microcavity are a square lattice of a photonic crystal with chiral symmetry.

A New Image Encryption Algorithm Based on Modified Optically Injected Semiconductor Laser Chaotic System

Compared with general chaotic systems, laser chaotic systems have more complex dynamic behaviors and extremely high sensitivity to parameters and initial values. So far, there are few studies on the application of laser chaotic systems to image encryption. Therefore, this paper proposes a new image encryption scheme based on an optical injection semiconductor laser chaotic system. The encryption scheme mainly includes two processes of scrambling and diffusion. The scrambling process converts the pseudo-random sequences generated by the laser chaotic system into chaotic matrixes and scrambling each pixel through a random point scrambling algorithm. In the diffusion process, the chaotic sequences generated by the laser chaotic system are quantized into random numbers and applied to the improved gravitational model algorithm to achieve the effect of pixel diffusion. The experimental results and security analyses indicate that the proposed algorithm has good image encryption performance and can effectively resist various common attacks on image encryption systems.

Microwave Frequency Measurement Based on an Optically Injected Semiconductor Laser

A microwave frequency measurement system utilizing the optical injection technology in a semiconductor laser is proposed. A single-wavelength optical carrier is generated and divided into two parts. One part is intensity-modulated by a control signal with a triangular shape and then injected into a semiconductor laser to generate a frequency scanning optical sideband. The other part is modulated by the microwave signal under test, which is then coupled with the frequency scanning optical sideband and detected by a photodetector (PD). The output of the PD is filtered by an electrical passband filter and detected by an envelope detector. Electrical pulses will be obtained with the time interval proportional to the microwave frequency. Thus the microwave frequency can be retrieved from the time interval of the generated pulses. A proof of concept experiment is taken. The microwave frequency measurement from 3 to 40 GHz is achieved, and the frequency measurement errors are within ±30 MHz.

МОДЕЛЮВАННЯ ОПТОЕЛЕКТРОННОГО НАВАНТАЖЕННЯ, ЯКЕ ЖИВИТЬСЯ ВІД ФОТОЕЛЕМЕНТА ТА АКУМУЛЯТОРА

Метою даної роботи є побудова еквівалентних електричних схем оптоелектронного навантаження, яке живиться від фотоелемента та акумулятора. В роботі показано необхідність створення таких еквівалентних електричних схем, а саме при підключенні світлодіодів та напівпровідникових лазерів до сонячних фотоелементів, в якості джерела електричної енергії, та при використанні акумуляторів електроенергії. Показано, що еквівалентні електричні схеми витікають з фізичних явищ в напівпровідникових пристроях і рівнянь, які описують явища перетворення електричної енергії в світлову. Викладено різні еквівалентні схеми оптоелектронного навантаження. Показано, як просту так і найбільш узагальнену еквівалентні електричні схеми. Зокрема, показано еквівалентну схему акумулятора і спрощені схеми фотоелемента та оптоелектронного випромінювача світла, де в якості навантаження виступає світлодіод. Зазначено, що розвитком даної моделі є більш узагальнена еквівалентна електрична схема, де в якості оптоелектронного навантаження виступає напівпровідниковий інжекційний лазер. Розписані їх параметри та викладені рівняння для струмів та напруг. Також показано існування пасивних паразитних елементів в таких електричних схемах. Також показано, що в якості схеми заміщення фотоелемента, в спрощеній моделі, використано ідеальне джерело напруги та резистор з конденсатором. В подальшому, в узагальненій моделі, для більш широкого моделювання роботи фотоелемента, в якості схеми заміщення було використано ідеальне джерело струму та нелінійні пасивні елементи. Тобто, в результаті, було отримано узагальнену еквівалентну електричну схему акумулятора, підключеного до фотоелемента та оптоелектронного навантаження. Побудовано рівняння для струмів та напруг в отриманої схеми заміщення. Зроблено висновок. Бібл. 7, рис. 5.

Topological localized states in the time delayed Adler model: Bifurcation analysis and interaction law.

The time-delayed Adler equation is the simplest model for an injected semiconductor laser with coherent injection and optical feedback. It is, however, able to reproduce the existence of topological localized structures (LSs) and their rich interactions. In this paper, we perform the first extended bifurcation analysis of this model and we explore the mechanisms by which LSs emerge. We also derive the effective equations governing the motion of distant LSs and we stress how the lack of parity in time-delayed systems leads to exotic, non-reciprocal, interactions between topological localized states.

Multiscroll chaotic attractors in Optical Injected Semiconductor Laser Driven by a Resonant Tunneling Diode Current

This paper shows a complex nonlinear dynamics of an optically injected laser diode (LD) directly modulated by electrical current from a resonant tunneling diode (RTD) circuit. The LD model evolves a new control parameter called effective gain coefficient (EGC) and can switch between a free-running laser and a perturbed laser. A bifurcation diagram analysis sustained Lyapunov exponents’ spectra reveals chaotic and quasi-periodic dynamics for restricted ranges of the frequency fin and by EGC variations, including the generation of the hyperchaotic regime and multiscroll chaotic attractors through a cascade of periodic oscillations to the chaos. Moreover, an implementation of this new coupled system also shows that when an AC signal Vacsin⁡2πfint is added to the DC voltage bias, the LD outputs show several optical signals such as periodic, coherence collapse and chaotic regimes with different strange complex attractors which are devoted to more improve secure optical telecommunications.

Relationship between Lyapunov Stability and Reservoir Computing Performance in an Optically Injected Semiconductor Laser with Optical Feedback

Relationship between Lyapunov Stability and Reservoir Computing Performance in an Optically Injected Semiconductor Laser with Optical Feedback

Exploiting the Nonlinear Dynamics of Optically Injected Semiconductor Lasers for Optical Sensing

Optically injected semiconductor lasers are known to display a rich variety of dynamic behaviours, including the emission of excitable pulses, and of rare giant pulses (often referred to as optical rogue waves). Here, we use a well-known rate equation model to explore the combined effect of excitability and extreme pulse emission, for the detection of variations in the strength of the injected field. We find parameter regions where the laser always responds to a perturbation by emitting an optical pulse whose amplitude is above a pre-defined detection threshold. We characterize the sensing capability of the laser in terms of the amplitude and the duration of the perturbation.

Chaotic Laser “Broadcast-Star” Synchronization Network and Its Application in Logic Gates

Abstract A novel network of “broadcast-star” constituted by a few of injection semiconductor laser cells and its synchronization in chaos are presented to apply in logic gates. Chaotic “broadcast-star” synchronization network is achieved in numerical simulation, where a broadcast using an injected laser drives three response systems with three injected lasers as three “stars” to achieve synchronization between the broadcast and stars while the “stars” obtain synchronization between themselves. The synchronization network model and equation are demonstrated. And logic controlling principle and equation are deduced. We create theoretically the constructions of fundamental gates based on the synchronization network in the “stars” and define their computational principle. Logic gate cell or logic computation can be implemented via controlling logic input and output to the system to synchronize or desynchronize appropriately the chaotic states of twin stars. We present and emulate a lot of all-optical XNOR, NOR, NOT, optoelectronic and combinational optoelectronic logic gates via the optical or optoelectronic modulation while we introduce these logic computational methods. Finally, we analyzed effects of resynchronization and desynchronization on logic detection in a practical implementation of the system. Results show the feasibility of the method.

Suppression of Intensity and Frequency Noise at Low-Sensitivity Operating Points of Period-One Dynamics of Optically Injected Semiconductor Lasers

Period-one (P1) dynamics induced by an optically injected semiconductor laser oscillate at microwave frequencies. The oscillation frequency of a P1 dynamic can be rendered nearly insensitive to small-signal parameter fluctuations and intrinsic laser noise at appropriate operating conditions of the master and slave lasers. In this paper, the noise-canceling properties of the various low-sensitivity (LS) operating points is demonstrated through their dependency on the noise fluctuation frequency and power. The three different types of LS operating points show their effectiveness in suppressing not only P1 intensity and frequency fluctuations caused by narrowband laser perturbations but also intensity and frequency noise caused by broadband intrinsic and extrinsic noise sources.