InGaN Shell Research Articles

Red Emission of Well‐Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective‐Area Growth

Herein, triangular‐lattice nanopillar templates are fabricated on sputter‐deposited AlN/Si (111) substrates. Nanotemplate selective‐area growth via radiofrequency‐plasma‐assisted molecular beam epitaxy is employed to grow GaN nanocolumns on the nanopillars. Well‐ordered uniform GaN nanocolumn arrays are obtained by inserting a migration‐enhanced‐epitaxy grown AlN/AlGaN buffer layer, thereby aligning the polarity of GaN to Ga‐polar. Subsequently, bulk InGaN active layers are grown on top of the GaN nanocolumns with increasing growth time (tg = 10–20 min). In the initial stage of growth (tg = 10 min), low‐In‐content InGaN grows on the edges of the six‐sided pyramidal top of the GaN nanocolumns. As the growth progresses, low‐In‐composition InGaN fills the sides between InGaN on the edges, while high‐In‐composition InGaN rapidly grows on the top of the c‐plane nanocolumns. High‐angle annular dark‐field scanning transmission electron microscopy reveals the formation of an InGaN core, covered with a low‐In‐composition InGaN shell, on the top of the nanocolumns. At tg = 20 min, the photoluminescence spectrum exhibits a peak at 669 nm with a full width at half maximum value of 51.7 nm. Thus, the proposed method is suitable for growing red‐light‐emitting well‐ordered InGaN/GaN nanocolumn arrays on Si.

X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire.

The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.

Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

GaN/InGaN core–shell nanorods are promising for optoelectronic applications due to the absence of polarization-related electric fields on the sidewalls, a lower defect density, a larger emission volume, and strain relaxation at the free surfaces. The core–shell geometry allows the growth of thicker InGaN shell layers, which would improve the efficiency of light emitting diodes. However, the growth mode of such layers by metal organic vapor phase epitaxy is poorly understood. Through a combination of nanofabrication, epitaxial growth, and detailed characterization, this work reveals an evolution in the growth mode of InGaN epitaxial shells, from a two-dimensional (2D) growth mode to three-dimensional (3D) striated growth without additional line defect formation with increasing layer thickness. Measurements of the indium distribution show fluctuations along the directions, with low and high indium composition associated with the 2D and 3D growth modes, respectively. Atomic steps at the GaN/InGaN cor...

Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

We investigate the optical emission properties of the active InGaN shell of high aspect-ratio InGaN/GaN core-shell microrods (μRods) by confocal quasi-resonant polarization-resolved and excitation density dependent micro-photoluminescence (μPL). The active shell, multiple thin InGaN/GaN quantum wells (MQWs), was deposited on GaN μRods selectively grown by metal organic vapor phase epitaxy on patterned SiO2/n-GaN/sapphire template. High spatial resolution mappings reveal a very homogeneous emission intensity along the whole μRods including the tip despite a red-shift of 30 nm from the base to the tip along the 8.6 μm-long m-plane sidewalls. Looking at the Fabry-Perot interference fringes superimposed on the μPL spectra, we get structural information on the μRods. A high degree of linear polarization (DLP) of 0.6–0.66 is measured on the lower half of the m-plane side facets with a slight decrease toward the tip. We observe the typical drop of the DLP with an excitation density caused by degenerate filling of valence bands (Fermi regime). Local internal quantum efficiencies (IQEs) of 55±11 % up to 73±7 % are estimated on the m-plane facet from measurements at low temperature. Finally, simultaneously fitting the DLP and IQE as a function of the excitation density, we determine the carrier density inside the active region and the recombination rate coefficients of the m-plane MQWs. We show that phase-space filling and the background carrier density have to be included in the recombination rate model.

Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 μm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate.

Measurement of strain in InGaN/GaN nanowires and nanopyramids

The growth and optoelectronic properties of core–shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X-ray diffraction data are presented that show that InαGa1−αN shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an anisotropic medium were applied in order to find the composition and strain in the InGaN shells. A range of nanowire samples with different InGaN shell thicknesses were measured and it is concluded that, with an In concentration of around 30%, major strain relaxation takes place when the thickness reaches 23 nm. InGaN shells of 6 and 9 nm thickness remain nearly fully strained biaxially along each of the \{10{\overline 1}0\} facets of the nanowires and the \{10{\overline 1}1\} facets of the nanopyramids.

Growth of InGaN/GaN core–shell structures on selectively etched GaN rods by molecular beam epitaxy

This work reports on the growth and characterization of InGaN/GaN core–shell structures by plasma-assisted molecular beam epitaxy on an ordered array of top-down patterned GaN microrods fabricated on a GaN/sapphire substrate. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core–shell structures with clear hexagonal facets. The radial InGaN growth (shell) was confirmed by spatially resolved cathodoluminescence performed using scanning electron microscopy as well as scanning transmission electron microscopy. The In content of the InGaN shell is controlled by means of the growth temperature and the III/V ratio.

Strain induced composition profile in InGaN/GaN core–shell nanowires

A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core–shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core–shell nanowires.

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1−xN core/shell nanowire heterostructures on Si(111) substrates

We report on the achievement of, for the first time, InN/InGaN core/shell nanowire heterostructures, which are grown directly on Si(111) substrates by plasma-assisted molecular beam epitaxy. The crystalline quality of the heterostructures is confirmed by transmission electron microscopy, and the elemental mapping through energy dispersive x-ray spectrometry further reveals the presence of an InGaN shell covering the sidewall and top regions of the InN core. The optical characterizations reveal two emission peaks centered at ∼1685 nm and 1845 nm at 5 K, which are related to the emission from the InGaN shell and InN core, respectively. The InN/InGaN core/shell nanoscale heterostructures exhibit a very high internal quantum efficiency of ∼62% at room temperature, which is attributed to the strong carrier confinement provided by the InGaN shell as well as the nearly intrinsic InN core.

Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires

Minority carrier diffusion lengths (Ld) are measured for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a technique based on imaging of recombination luminescence. The effect of shell material on transport properties is measured. An AlGaN shell produces Ld values in excess of 1 μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of Ld on diameter is observed for uncoated nanowires.

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires

The optical properties, indium concentration and distribution, defect morphology, and strain distribution of GaN/InGaN coaxial nanowires grown by metal organic chemical vapor deposition were investigated using spatially resolved cathodoluminescence, scanning transmission electron microscopy, and finite element analysis. The results indicate that InGaN layers with 40% or greater indium incorporation and low defect density can be achieved. The indium distribution in the InGaN shell layer was measured and qualitatively correlated with the calculated strain distribution. The three-dimensional compliance of the GaN nanowire leads to facile strain relaxation in the InGaN heteroepitaxial layer, enabling high indium incorporation and high crystalline quality.

Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics

We report a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures. n-GaN/InGaN/p-GaN CSS nanowire structures were grown by metal-organic chemical vapor deposition. Electron microscopy images reveal that the CSS nanowires are defect-free single crystalline structures, while energy-dispersive X-ray linescan profile studies confirm that shell thickness and composition can be well controlled during synthesis. Photoluminescence data further show that the optical properties are controlled by the CSS structure with strong emission from the InGaN shell centered at 448 nm. Importantly, electrical devices made by simultaneously contacting the n-type core and outer p-type shell of the CSS nanowires demonstrate that in forward bias these individual nanowires behave as light-emitting diodes (LEDs) with bright blue emission from the InGaN shell. The ability to rationally synthesize galliu...