InGaN Blue Chip Research Articles

Highly efficient red emission of CsPbBrI2 quantum dots glasses modified by Nb5+ for light-emitting application

Red-emitting perovskite quantum dots (QDs) have significant potential for application in optoelectronic devices. However, their application is hindered by preparation challenges and low photoluminescence quantum yield (PLQY). In this study, CsPbBrI2 red-emitting QDs with a PLQY of up to 58.73 % were synthesized in germanium borate glass. The experimental results indicated that the addition of Nb5+ can not only partially replace the Pb2+ sites but also passivate halogen defects in QDs, enhance radiative transitions, and significantly improve the lattice ordering of CsPbBrI2 QDs glass. Additionally, the incorporation of Nb2O5 supplies free oxygen, facilitating the conversion of [BO4] to [BO3] in the glass network, which results in a looser structure conducive to crystallization. Moreover, the Nb5+-doped CsPbBrI2 QDs glass demonstrated excellent hydrothermal stability. The QDs glass exhibiting the highest luminescent performance was subsequently combined with an InGaN blue chip to create a WLED with a color rendering index (CRI) of 82.7. This study offers an innovative methodology for synthesizing perovskite QDs glass materials with enhanced red emission efficiency through transition metal doping, highlighting their significant potential for practical applications in WLEDs.

Activator Heavy Solid Solution in Rigid Framework: An Effective Strategy Toward Highly Efficient and Thermally Stable Near‐Infrared Emission for Wireless Communication

AbstractBroadband near‐infrared (NIR) phosphors are crucial components of next‐generation NIR lighting sources. However, the design of high‐efficiency and thermally stable NIR phosphors still poses a significant challenge, whose quantum efficiencies (QEs) are directly limited by their absorption efficiency (AE) toward incident light. Here, an efficient and thermally stable NIR emission with AE up to 64.9% and emission keeping of 91.23% at 423 K is demonstrated via Cr3+ heavy solid solution in rigid framework LiCaGaF6:Cr3+ (LCGFC). Isomorphic LiCaAlF6:Cr3+ also exhibits thermal robustness, while traps in low doping concentration and low QEs. Comparative studies on crystal structure, formation energy, and Helmholtz free energy disclose that Cr3+ substitution on equivalent and equiradius Ga3+ site versus radii differential Al3+ site generates heavier solid solution and sustainable structural rigidity with acquirement of higher AE and better thermal stability. Incorporating LCGFC with a blue InGaN chip, a NIR phosphor‐converted light‐emitting diode is fabricated to realize stable wireless optical communication with good penetrability through biological tissue and some organic products. These findings develop a strategy based on activator heavy solid solutions in a rigid framework to achieve high‐efficiency and thermally stable NIR phosphors but also advance their novel optoelectronic applications.

Delineating Dy3+ and Sm3+ in thermally stable strontium silicate apatites for multifunctional applications

The structural, optical and temperature dependent luminescence properties of a series of Sr2Y8-xREx(SiO4)6O2 (RE=Dy and Sm) silicate phosphors are investigated for their multifunctional applications. The phosphors were synthesized using the solid-state reaction route with varying doping levels and characterized for phase purity. X-ray Diffraction analysis revealed the hexagonal crystal structure of (Sr2RE2)(RE6)(SiO4)6O2, indicating the incorporation of rare earth (RE) ions into two distinct crystallographic sites, thereby augmenting the luminescence properties. Dy3+ doped compounds exhibit intense yellow emission, promising white light generation when paired with InGaN blue LED chips. Sm3+ doped samples show orange-red emission around 601 nm, attributed to multipole-multipole interactions, with rapid decay curves suitable for high-speed response LEDs. Correlated Color Temperature (CCT) values were computed to assess the commercial viability of these phosphors in luminescence applications and the role of lighting in the growth of indoor plants and office spaces is discussed. The Sr2Y7.8Dy0.2(SiO4)6O2 phosphor with remarkable quantum yield of 63.56% demonstrated a thermal stability of 0.27 eV with enhanced sensitivity of about 0.39% K−1 and Sr2Y7.8Sm0.2(SiO4)6O2 with stability around 0.31eV with sensitivity of 1.11% K⁻¹ at 100K reveals them as potential candidates for optical temperature sensing. These results declare the competence of synthesized novel silicate apatites in solid-state lighting and optical thermometry.

Highly‐Efficiency Far‐Red Emission in Cr3+ Activated Ca1.8Mg1.2Al2Ge3O12 toward Plant Precise Lighting

AbstractFar‐red (FR) region (beyond 700 nm) lighting sources possess special potential for plant lighting. However, it remains a challenge to obtain high‐performance Cr3+‐doped FR phosphors. This study developed a FR phosphor, Ca1.8Mg1.2Al2Ge3O12:Cr3+ (CMAGG: Cr3+), using the cation substitution strategy. Under 438 nm blue light excitation, the phosphors display FR emission centered at 720 nm with a full width at half maximum (FWHM) of 91 nm. Benefit from the favorable match with the FR phytochrome (Pfr), the phosphor is combined with InGaN blue light chips to create a FR phosphor‐converted light‐emitting diode (pc‐LED), which is used in Italian lettuce growth experiments and it results shown in a 15% increase in fresh weight and a 6.5% increase in dry weight. Notably, supplemental FR light modulated its growth morphology. The results of this study will be useful for further research on novel Cr3+‐doped FR phosphors to meet the precise spectral requirements for plant growth.

An efficient and thermally stable source with Cr3+ near-infrared luminescence for non-destructive testing applications

The quest for efficient and heat-resistant near-infrared (NIR) phosphors to create advanced smart NIR lighting sources continues to pose a significant challenge. This study introduces a new fluoride phosphor, Cr3+-doped Cs2NaScF6, wherein the Cs2NaScF6 host provides a weak crystal field suitable for Cr3+ doping. This arrangement allows the production of a broad NIR emission peaking at 797 nm, coupled with a notable internal quantum efficiency of 90.8 % when excited by 446 nm blue light. Meanwhile, due to the relatively mild electron-phonon coupling effect and a high activation energy within this phosphor, the overall NIR emission intensity at 150 °C sustains 81.8 % of its level at room temperature. This highlights exceptional thermal stability in photoluminescence performance. Combining the Cs2NaScF6:Cr3+ phosphor with a commercially available blue InGaN chip to construct a NIR light-emitting diode (LED) device, which exhibits efficient and stable NIR emission, making it suitable for non-destructive testing applications. These findings affirm that the Cs2NaScF6:Cr3+ phosphor can function as a promising candidate to fabricate high-performance device for NIR spectroscopy application.

Cr3+↔Fe3+ Energy Transfer Offset Enabling Anti‐Thermal Quenching Near‐Infrared Emission for Coded Wireless‐Communication Applications

AbstractBroadband near‐infrared (NIR) emission phosphors are crucial for the construction of next‐generation smart lighting sources; however, the thermal quenching (TQ) issue poses a significant challenge to their applications. In this study, anti‐TQ NIR emission is demonstrated in hexafluoride phosphors, using a facile Cr3+/Fe3+ co‐doping strategy. Owing to the controlled forward resonance energy transfer (ET) from Cr3+ to Fe3+ and one‐phonon‐assisted back ET from Fe3+ to Cr3+, the thermally enhanced broadband NIR luminescence is realised in series of fluoride such as Na3FeF6:Cr3+, Na3GaF6:Cr3+, Fe3+, K2NaScF6:Cr3+, Fe3+, etc. By varying the chemical composition of the phosphor, the anti‐TQ emission is achieved even upon raising the temperature to ≈423 K. The anti‐TQ luminescence mechanism is investigated, and the ET offset effect on luminescence TQ is demonstrated. More importantly, by combining these phosphors with blue InGaN chip, anti‐/zero‐TQ NIR light emitting diodes with a high photoelectric conversion efficiency even up to 19.13%@20 mA are further fabricated to realize the emerging coded optical wireless‐communication applications. These findings can initiate the exploration of NIR phosphors with anti‐TQ luminescence properties for advanced optoelectronic applications.

Application of a Perovskite NIR-LED with Highly Stable FAPbI3@SiO2 Core-Shell Nanocomposites in a SPR Sensing Platform.

In recent years, the demand for detection and diagnostic methods has consistently risen due to the aging of the population and the increase in the number of patients with chronic diseases. Label-free biomedical detection techniques have emerged as indispensable instruments for diagnosing a variety of diseases. The development of label-free and highly sensitive near-infrared (NIR) biomedical detection technology has attracted considerable attention. As a label-free, swift, and cost-effective analytical technique, it has demonstrated immense potential for a wide range of applications. We successfully assembled FAPbI3 near-infrared perovskite quantum dots (NIPQDs) into SiO2 shells using a rapid room-temperature atmospheric synthesis method, obtaining monodisperse FAPbI3@SiO2 nanocomposites (NCs) with a high photoluminescence quantum yield (PLQY) of 72%. Additionally, the incorporation of hydrophobic multi-branched trioctylphosphine oxide effectively passivated the surface defects of FAPbI3 NIPQDs and suppressed the hydrolysis rate of tetraethoxysilane, enabling the formation of a highly stable and high PLQY nanoscale-particle level within the FAPbI3@SiO2 core-shell structure. Notably, we successfully incorporated FAPbI3@SiO2 core-shell NCs onto InGaN blue chip as NIR excitation light sources for surface plasmon resonance sensing platforms, providing a novel platform for bioanalytical detection. With a detection sensitivity of 6302.5 nm/RIU, the system demonstrated high sensitivity, stability, and dependability. This achievement expands the biomedical research field's capacity for diagnosis, monitoring, and treatment.

Thermally stable near-infrared emission from a double perovskite K2LiScF6:Cr3+ phosphor for light-emitting diodes

The exploration of Cr3+-doped near-infrared (NIR) phosphors for light-emitting diodes has attracted widespread attention. In this work, we present a fluoride double perovskite K2LiScF6:Cr3+ NIR-emitting phosphor through a co-precipitation method. It was found that the Cr3+ activators undergo a weak crystal field and present a NIR emission band peaking at 768 nm under blue light excitation (430 nm). Meanwhile, the K2LiScF6:Cr3+ exhibits a high activation energy (0.537 eV), a weak electron-phonon coupling (EPC) effect and a remarkable photoluminescence thermal stability at 423 K, with an intensity of 95.1% of that at room temperature. Profiting from the luminescent properties, clear night vision images and human palm vein photographs were realized by coating the K2LiScF6:Cr3+ phosphor on a blue InGaN chip and using it as a lighting source, suggesting its applicability in light-emitting diodes for NIR spectroscopy applications.

Optimizing the luminescent performance and water resistance of K2SiF6:Mn4+ phosphor by doping Li+ and coating BaSO4

Mn4+ activated K2SiF6 red phosphors have attracted widespread attention, while the poor moisture resistance restrains their further applications. In order to optimize the luminescence intensity of the K2SiF6:Mn4+ red phosphors immersed in water, we synthesized K2SiF6:Mn4+, Li + red phosphors with LiF as lithium source. The luminous intensity of K2SiF6:Mn4+, Li+ phosphor is approximately 133% of K2SiF6:Mn4+ red phosphors. By coating BaSO4 layer on the surface of K2SiF6:Mn4+, Li+ samples, the luminous intensity of K2SiF6:Mn4+, Li+@BaSO4 red phosphor maintains 83% of the initial intensity after soaking in water for 6 h. In addition, the K2SiF6:Mn4+, Li+@0.8 BaSO4 red phosphor has higher luminous intensity at 150 °C. Finally, by combining with InGaN blue chip and yellow phosphor (YAG:Ce3+) to fabricate warm white LED devices, the warm white LED device based on K2SiF6:Mn4+, Li+@0.8 BaSO4 red phosphor has excellent performance (CCT = 3558 K, CRI = 91.4).

Blue-excited red emission of CeO2:Eu3+, Al3+ cubic phosphor: Influence of Al3+ ion doping and Judd-Ofelt theory

In this work, a series of CeO2: 0.1 Eu3+, xAl3+ (x = 0, 0.1, 0.2, 0.3, 0.4, and 0.5 mol %) red phosphors could be efficiently excited with blue-light was successfully prepared by solid-state reaction. The X-ray diffraction confirmed the formation of a single-phase CeO2 cubic with high crystallinity. Under blue light (466 nm) excitation, the CeO2: Eu, Al phosphors showed dominant red emission of Eu3+ ions associated with 5D0 – 7F2 transition, which matched well with the commercial blue light InGaN chip. Significantly, the red emission intensity of sample co-doped with 0.3% mol Al3+ was enhanced by 8-times compared to the un-doped one. This result was caused by the presence of Al3+ ions forming oxygen vacancies and disturbing the symmetry of the host, leading to effectively enhanced red emission of the system. The enhanced red emission mechanism of the CeO2:Eu3+, Al3+ phosphors was further explained by Judd-Ofelt (J-O) theory analysis and radiative properties, including branching ratios (βr), transition probability (A), radiative lifetime (τcal), and stimulated emission cross-section (σe) of the phosphor were determined. The CeO2:0.1Eu3+, 0.3Al3+ phosphor shows intense red emission, a long lifetime (0.735 ms), and high quantum efficiency (49.46%), making it a suitable candidate as a red component for preparing low-cost WLEDs.

An Ultra‐Broadband Yellow‐Emitting Phosphor KRbCa0.8Mg0.2PO4F:Eu2+ for White Light‐Emitting Diodes with High Color Rendering Index

AbstractPhosphor‐converted white light‐emitting diodes (pc–WLEDs) realized by combining near‐ultraviolet (NUV) chips and multi‐color phosphors are found to be an effective solution to make up the shortcomings of the poor color rendering index and high correlated color temperature of the combination of blue InGaN chips with YAG:Ce3+ yellow phosphor. However, the NUV excited phosphors suffer from deficiencies such as reabsorption and dissonance deterioration rates. To surmount the drawback above, the ion substitution engineering was carried out to the (Rb,K)2CaPO4F:Eu2+ phosphors, and an NUV excited ultra‐broadband yellow‐emitting phosphor was obtained in this work. With the substitution of Mg2+ for Ca2+, the emission intensities of (Rb,K)2CaPO4F:Eu2+ phosphors are significantly improved as well as the thermal stability. Under the excitation of 380 nm, the yellow phosphor KRbCa0.78Mg0.2PO4F:0.02Eu2+ exhibits an ultra‐broad emission band covering the range from 450 to 800 nm with an amazing FWHM of 181 nm. White light with a super‐high color rendering index (Ra = 92.3), appropriate correlated color temperature (5644 K), as well as stable CIE chromaticity coordinates are achieved by the white light‐emitting diodes device fabricated with this yellow phosphor. These excellent performances indicate that KRbCa0.78Mg0.2PO4F:0.02Eu2+ has great potential to be applicated in the NUV excited white LEDs.

Chromium doped broad-band near-infrared emission Mg4Ta2O9: Cr3+ phosphor excited by blue light for NIR-LEDs

Near-infrared light has a wide range of applications in imaging, non-destructive testing, and anti-counterfeiting. Fluorescence conversion method is one of the important methods for making near-infrared (NIR) LED light sources. In this work, we synthesized a novel Cr3+-doped Mg4Ta2O9 system, which can emit NIR light with a peak around 850 nm under the excitation of blue light at 460 nm. It has a broad emission spectrum with full width at half maximum (FWHM) of 178 nm, covering the first NIR region and extending to the second NIR region. The structure, luminescence properties, and applications of this NIR luminescent material have been studied in detail. Cr3+ occupies two six-coordinated Mg2+ sites in this system. The emission spectrum shows an anomalous phenomenon of red-shift with the increase of doping concentration, which is the result of the competition between the crystal field strength and the Jahn-Teller effect. The luminescent material can still maintain 82% of the luminous intensity at 150 °C. By combining with blue InGaN chips, NIR light-emitting optical devices were fabricated, and their potential applications in biological tissue penetration and non-destructive testing were demonstrated.

Highly efficient and water-resistant K3ZrF7:Mn4+ red-emitting phosphors

Mn4+ activated fluorides are promising red phosphors to be used in warm white light emitting diodes and liquid crystal display (LCD) backlighting due to their unique narrow-band red emission and broad band absorption in blue wavelength region. However, the instability in humid environment of these phosphors limited their practical application. In this work, we developed a facile co-precipitate method to prepare Mn4+ doped K3ZrF7 phosphors with good water-resistant properties. The crystal structure of K3ZrF7 was analyzed by XRD Rietveld refinement. The photoluminescence intensity was maintained at 95% after being immersed in water for 40 min in comparison with only 39.8% for Mn4+ doped K2TiF6 phosphors. The intrinsic seven coordination environment of Mn4+ in K3ZrF7 crystal was proposed as the main reason contributing to the good water resistance of the sample. The internal quantum efficiency and external quantum efficiency of optimized K3ZrF7:Mn4+ was measured to be 70.8% and 19.5% respectively. The thermal stability of the obtained phosphors was studied. A warm white light LED device with color temperature of 4074 K and color rendering index of 76.5 was fabricated by combining a mixture of K3ZrF7:Mn4+ and Y3Al5O12:Ce3+ with a blue InGaN chip.

Protonated organic cations enhance the luminescence performance and thermal stability of fluoride red phosphor K2TiF6:Mn4+

The application of red luminescent phosphors composed of Mn4+-activated fluoride in WLEDs has aroused great interest. However, most of the fluoride phosphors doped with Mn4+ have poor luminescent thermostability. In order to improve their luminescent thermostability, a new type of organic-inorganic hybrid red luminescent phosphor K2TiF6:PIPH22+,Mn4+ (PIPH22+ = protonated piperazine) was synthesized by a simple cation exchange method in this work. Protonated piperazine was incorporated into K2TiF6 lattice, and the strong hydrogen bond between H- and F- enabled the organic group to exist stably in the inorganic lattice. Compared with K2TiF6:Mn4+, the addition of PIPH22+ increases distance between adjacent [TiF6]2- and inhibits the energy migration of Mn4+ ions between [MnF6]2- to reduce nonradiative transitions. Therefore, the hybrid sample K2TiF6:PIPH22+,Mn4+ has higher emission intensity and quantum yield. Under the excitation of 467 nm blue light, K2TiF6:PIPH22+, Mn4+ exhibits sharp red emission near 631 nm, and the luminescence intensity is 2.14 times that of K2TiF6:Mn4+. K2TiF6:PIPH22+,Mn4+ has significant negative thermal quenching and higher luminescence thermostability, which can be attributed to electron-phonon interaction mechanism at high temperature. The prototype WLED prepared with YAG:Ce3+, K2TiF6:PIPH22+,Mn4+ and InGaN blue LED chip can emit warm white light (CCT = 2795 K, CRI = 91.1) under 20 mA current, and the luminescence efficiency was 105.8 Lm/W. The prototype WLED was tested under 20–120 mA current, and the results showed that the changes of CCT and CRI were stable. These results indicate the potential of K2TiF6:PIPH22+,Mn4+ in WLED applications.

Highly efficient green-emitting ZnO:Cu2+ phosphors for NUV-pumped white-emitting diodes.

Phosphor-converted white light-emitting diodes (WLEDs) have received significant attention; however, the leaked light from their blue InGaN chips has an undesirable effect on human health. Hence, it is necessary to develop red, green, and blue-emitting phosphors, which can be excited by an NUV chip instead of a blue chip. Herein, green-emitting ZnO:Cu2+ phosphors have been successfully synthesized by a simple and facile thermal diffusion method. The obtained powder shows a broad emission band peaking at 525 nm and a strong absorption peak at 377 nm. The ZnO:5%Cu2+ phosphor annealed at 800 °C in 2 hours revealed a lifetime of 0.57 ms, an activation energy of 0.212 eV, and the highest emission intensity with (x, y) CIE colour coordinates (0.3130, 0.5253). A WLED prototype has been fabricated by coating the ZnO:5%Cu2+ phosphor on an NUV 375 nm LED chip, where this coated phosphor shows a high quantum efficiency (QE) of 56.6%. This is, so far, the highest reported QE value for ZnO-based phosphors. These results suggest that the ZnO:Cu2+ phosphor could be an excellent candidate for NUV-pumped phosphor-converted WLED applications.

An efficient pink luminescent Eu(iii) coordination polymer excited on a blue LED chip

The design of a pink-LED device is achieved by doping an Eu(iii) coordination polymer (Eu2 CP) on an InGaN blue LED chip. The Eu2 CP has been studied systematically in terms of structure, stability and photophysical properties in the solid state.

A highly efficient Mn4+ activated Nb-based oxyfluoride red fluorescent material with excellent water stability: preparation and performance analysis.

In this study, an efficient non-rare earth Mn4+-doped K3(NbOF5)(HF2) red fluorescent material was synthesized by using the coprecipitation method. Replacing KF with K2CO3 effectively solved the problem that KF was difficult to stir due to its strong water absorption. The sample was composed of rods. The excitation spectra consisted of two strong excitation peaks at 366 nm and 468 nm. The emission spectra consisted of a series of narrow-band emissions between 580 nm and 680 nm. Besides, the luminescence quantum efficiency (QE) reached 84.3% under the excitation of 468 nm. The fluorescent lifetime of K3(NbOF5)(HF2):Mn4+ was less than 4 ms, which can achieve fast response display in backlight display applications. The WLED was fabricated with K3(NbOF5)(HF2):Mn4+ and commercial YAG:Ce3+ and the commercial InGaN blue chip. At a 30 mA drive current, the WLED device exhibited excellent luminescence properties. The correlated color temperature (CCT) was 3853 K, the Ra was 90.1 and the luminous efficiency was 310.432 lm W-1. Therefore, K3(NbOF5)(HF2):Mn4+ has very broad prospects in WLED lighting and backlight display applications.

Mn4+ activated dodec-fluoride red phosphor Na3Li3In2F12:Mn4+ with excellent waterproof stability for WLEDs

Mn4+ activated fluoride red phosphors, as candidate red materials in white light-emitting diodes (WLEDs), have received widespread attention. However, the poor water stability limits their application. Herein, a novel dodec-fluoride red phosphor Na3Li3In2F12:Mn4+ with good waterproof stability was successfully synthesized by solvothermal method. The crystal structure, optical property, micro-morphology, element composition, waterproof property and thermal behavior of Na3Li3In2F12:Mn4+ phosphor were analyzed. Under the 468 nm blue light excitation, the Na3Li3In2F12:Mn4+ phosphor has narrow emission bands in the area of 590–680 nm. Compared with commercial red phosphor K2SiF6:Mn4+, the Na3Li3In2F12:Mn4+ phosphor possesses better waterproof stability. When soaked in water for 360 min, the PL intensity of the Na3Li3In2F12:Mn4+ phosphor remains at initial 80%. Finally, warm WLEDs with CRI of 87 and CCT of 3386 K have been fabricated using blue InGaN chip, YAG:Ce3+ yellow phosphor and Na3Li3In2F12:Mn4+ red phosphor.

Ultra-Stable and Highly Efficient White Light Emitting Diodes through CsPbBr3 Perovskite Nanocrystals-Silica Composite Phosphor Functionalized with Surface Phenyl Molecules.

Poor stability of CsPbBr3 perovskite nanocrystals (NCs) to moisture/heat/light has significantly limited their application as a green phosphor, despite their outstanding luminescent properties. Here, a remarkably stable CsPbBr3 NCs-silica composite phosphor functionalized with surface phenyl molecules (CsPbBr3 -SiO2 Ph ) is synthesized by controlling low-temperature hydrolysis and condensation reaction of perhydropolysilazane in the presence of CsPbBr3 NCs followed by phenyl-functionalization. Through the process, CsPbBr3 NCs are confined in a compact silica matrix, which is impermeable to H2 O. The synthesis strategy is extended to a classical red quantum dot, CdZnSeS@ZnS NCs, to fabricate a white light emitting diode (WLED) consisting of CsPbBr3 -SiO2 Ph and CdZnSeS@ZnS-SiO2 Ph phosphor and silicone resin packaged on a commercial blue InGaN chip with luminous efficacy (LE) of 9.36 lm W-1 . The WLED undergoes enhancements in both green and red photoluminescence over time to achieve a highly efficient performance of 38.80 lm W-1 . More importantly, the WLED exhibits unprecedented operational stability of LE/LE0 = 94% after 101h-operation at 20mA (2.56V). The ultra-high operational stability and efficient performance are mainly attributed to thermal curing and aging through which grain growth occurs as well as deactivation of defect states by permeated atmospheric O2 .

Mn2+ doped BaAl11O16N phosphors with narrow band green emission and superior thermal stability for backlighting display applications

Here, BaAl11O16N: Mn2+ green phosphor was synthesized by a two-step high-temperature solid-phase method, and its phase structure, morphology and photoluminescence properties were studied in detail. The phosphor has a wide excitation range of 240–500 nm, and the most effective excitation bands are in the blue spectral regions, indicating that BaAl11O16N: Mn2+ green phosphor can be effectively excited by the commercial blue LED chip. Under the excitation of ultraviolet and blue light, the BaAl11O16N: Mn2+ phosphor shows bright green light emission, with a peak of 514 nm and a half peak width of about 31 nm. The emission properties with temperature change show that the BaAl11O16N: Mn2+ phosphor has good thermal stability and excellent color stability. The white light-emitting diode (a blue InGaN chip combined with BaAl11O16N: 0.25Mn2+ phosphor and a commercial K2SiF6: Mn4+ phosphor) exhibits a NTSC value of 119.3%. Therefore, it can be concluded that the BaAl11O16N: Mn2+ phosphor the ideal choice for wide color gamut backlight as a potential efficient phosphor with green narrow-band emission.