Influence Of Work Function Research Articles

Analogue tuning of junction-less strained DG-MODFET

This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking the dependency of analogue properties on the WF tuning into account. Numerical simulation was performed using industrial-based process/device simulator, Silvaco TCAD tools. The simulation results revealed that analogue properties of the device such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd) and early voltage (VEA) exhibited an increase of ~17.4%, ~104.7%, 96% and 69.4% respectively as the WF is slightly minimized. However, the output impedance (ro), and intrinsic gain (AV) were deteriorated for ~58.4% and ~16.2% respectively as the WF is slightly minimized.

Simulation of p-type c-Si solar cells with metal oxides as carrier-selective contacts

The silicon heterojunction (SHJ) solar cell has been one of the most promising candidates for the photovoltaic (PV) market because of its high efficiency, simple structure and mature fabrication process. By replacing the p-type and n-type doped silicon layers with metal oxides, the so-called dopant-free asymmetric heterocontacts (DASH) solar cell can be formed, which will be easy to achieve full-surface passivation and selective carrier transport. In this study, the AFORS-HET software was used to simulate the Ag grid/ITO/ZnO/c-Si(p)/MoOX/Ag device configuration, in which ZnO was used as electron-selective contact and MoOX as hole-selective contact. The influence of work function (WF) of MoOX layer, thickness and doping concentration of ZnO layer, doping concentration of crystalline silicon (c-Si) layer on the device performance were investigated. The simulation results demonstrated that the application of ZnO layer and MoOX layer as carrier-selective layers can significantly increase the open-circuit voltage (VOC) and short-circuit current density (JSC). After a series of optimization, the simulated champion conversion efficiency (Eff) can reach 27.64 %, which will provide meaningful information for subsequent experiment research of DASH solar cells.

Analogue properties of junction-less strained dg-mosfet

This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking the dependency of analogue properties on the WF tuning into account. Numerical simulation was performed using industrial-based process/device simulator, Silvaco TCAD tools. The simulation results revealed that analogue properties of the device such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd) and early voltage (VEA) exhibited an increase of ~17.4%, ~104.7%, 96% and 69.4% respectively as the WF is slightly minimized. However, the output impedance (ro), and intrinsic gain (AV) were deteriorated for ~58.4% and ~16.2% respectively as the WF is slightly minimized.

A Comparative Study on the Electrical Characteristics of Generating Plasma by Using Different Target Sources

In this research, the electrical characteristics of glow discharge plasma were studied. Glow discharge plasma generated in a home-made DC magnetron sputtering system, and a DC-power supply of high voltage as input to the discharge electrodes were both utilized. The distance between two electrodes is 4cm. The gas used to produce plasma is argon gas which flows inside the chamber at a rate of 40 sccm. The influence of work function for different target materials (gold, copper, and silver), - 5cm in diameter and around 1mm thickness - different working pressures, and different applied voltages on electrical characteristics (discharge current, discharge potential, and Paschen’s curve) were studied. The results showed that the discharge current and potential increase by increasing the applied voltage ranging between 300-700 V. Discharge current increased as working pressure increased in the beginning, and then semi-stabilized (slight increase) starting from 1×100 mbar, while discharge potential decreased at the beginning as working pressure increased and then semi-stabilized at the same point at which discharge current stabilized. The Paschen’s curves were compared with each other. It was concluded that the lower breakdown voltage was associated with lower work function of the (Au, Cu, and Ag) cathode material. Breakdown voltages were (395, 398, and 420) for Ag, Cu and Au respectively.

Work Function Dependence of Vibrational Relaxation Probabilities: NO(v = 2) Scattering from Ultrathin Metallic Films of Ag/Au(111)

We present measurements on the vibrational relaxation of NO(v = 2) scattered from atomically defined thin films of Ag on Au(111). The vibrational relaxation probability is strongly dependent on film thickness, increasing with each of the first three Ag monolayers. We interpret this as the influence of work function which changes with layer thickness. This supports the postulated mechanism of NO vibrational relaxation involving a transient NO– anion.

Influence of Cathode Work Functions on the Photovoltaic Properties of MEH-PPV: TiO<sub>2</sub> Bulk Heterojunction Solar Cell

Bulk heterojunction solar cell has received significant attention over the past decade due to low cost power generation and the potential to develop a clean renewable energy source [. We investigated the effect of different type of metal cathodes on the power conversion efficiency of bulk heterojunction solar cell based on a blend of conjugated polymer poly [2-methoxy 5-(2-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with titanium dioxide (TiO2). In this case of study, Aluminum (Al) and gold (Au) has been chosen as the metal cathode due to the difference of work function and their wide application in hybrid solar cell. We show that the choice of metal cathode plays a role in determining overall device efficiency through their impact on short-circuit current, open circuit voltage and fill factor due to the influence of work function. It is found that the device employing Al metal cathode which has low work function is showing a comparable performance to the Au metal electrode with fill factor of over 20 % and a power conversion efficiency of 3.3x10-3 %. Overall it is demonstrated that the matching between the work function of the cathode and photoactive layer MEH-PPV: TiO2 is the most important factor towards best bulk heterojunction solar cell performance.

Hydrogen Evolution Reaction on Electrodes: Influence of Work Function, Dipolar Adsorption, and Desolvation Energies

The dependence of the standard exchange current density of the hydrogen evolution reaction on electrode surfaces has been investigated using the work function of metals, free energy of bond formation with adsorbed hydrogen atoms, surface potential of the reactant, and adsorption characteristics of solvent dipoles. The explicit influence of the parameters is derived using a postulated transition state and a satisfactory agreement with experimental data is noticed for a large number of sp and d metals.

Electron transfer reactions at metal electrodes: Influence of work function on free energy of activation and exchange current density

The dependence of the free energy of activation on the work function of electrodes, solvation energies, and surface potentials of the reactant species pertaining to electron transfer reactions at metal/solution interfaces is derived using thermodynamic considerations. The standard exchange current density is calculated for Fe3++e↔Fe2+ at different metal electrodes and compared with experimental data as well as molecular dynamics simulations.