Tungsten doped Titania thin films were sputtered on a silicon substrate by magnetron co-sputtering. The influence of tungsten on Vickers hardness and crystallographic changes was studied in films subjected to stepped annealing treatments. Rutile is the dominant phase with crystallite size ∼ 10 nm after 500 °C annealing. The films, doped with 1.79 % W, exhibit the highest hardness (20.88 GPa), a rutile-anatase mixture (80:20) and a preferential shift in crystallographic orientation from (101) to (110). The homogeneous distribution of tungsten in TiO2 stabilizes rutile at 500 °C, providing an innovative and simple strategy for its synthesis, thus expanding the options for substrate materials.
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