The electronic structure properties of the delafossite CuFeO2 and Chalcopyrite CuFeS2 semiconductors were studied by XAFS technique theoretically. Calculations were performed with the XAFS code FEFF 8.20 under increasing temperature conditions for 300 K, 350 K, 450 K, 500 K, and for 20% Li substitution at room temperature. High stability in the electronic structure of both materials addressed was observed as a result of the hybridized states built with the contribution of the overlapped outer shell electrons and levels of the neighboring atoms, i.e., Cu, Fe, O or S. The hybridized levels were determined as supporting the stability of the molecular bands via rich quantum symmetries. For the second step of the studies, 20% Li substitution in copper coordination was processed to probe the response of the materials to substitution mechanisms. In the CuFeO2 semiconductors, 0.5 eV shift was observed with the Li substitution at the Fe K-edge absorption spectra which caused a loose in the Li-O bonds as a result of the weaker electronegativity which increased the strength of the Fe-O bonds.