Influence Of Substrate Geometry Research Articles

Computational study of plasma-surface interaction in plasma-assisted technologies

The influence of the unevenness of substrates immersed into plasma important for plasma-based treatment of materials were studied by computer experiment. The role of both substrate properties and plasma parameters was investigated. For this analysis the combination of multidimensional fluid modelling and particle simulation was used. The fluid part of our model consisted of continuity equations for all charged species, energy balance equation for electrons and Poisson equation. The basic scattering processes were also included. The particle simulation technique was used both for the calculation of electron energy distribution function and for the derivation of quantities characterising plasma-surface interaction. This approach enabled us to study in detail the structure of the sheath and presheath near metal substrates with realistic geometries and finite dimensions. The main attention was devoted to the influence of substrate geometry in both macroscopic and microscopic spatial scales on the local electric fields in plasma.

Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrix

Synthesis of germanium (Ge) nanocrystals embedded in silicon oxide matrix was carried out on cosputtered Ge plus silicon oxide films deposited on the surface of silicon (Si) wafer etched with V- or U-grooves. The V- or U-grooves were fabricated via the laser interference lithography technique. We found that the substrate geometry has a significant influence on the distribution of the Ge nanocrystals in the silicon oxide matrix. The variation in the distribution of the nanocrystals in the silicon oxide matrix may be due to defective oxide regions caused by sputter deposited silicon oxide film on the V- or U-grooves or may also be related to the different strain fields in the oxide layer.

Self-consistent particle modelling of plasma-solid interaction: Influence of substrate geometry

In the contribution the transport of electrons and ions in plasma is studied by computer experiment. The main goal of modelling was to establish the limits of validity of models with restricted geometries. For this purpose several self-consistent particle models for low-pressure discharge in an electropositive gas were developed. All models are based on a deterministic particle-in-cell technique with scattering events treated stochastically and they describe the interaction of low-temperature plasma with planar, cylindrical and spherical substrates. It was proved that only the simulation of problems with spherical symmetry brings physically valid results when using one-or two-dimensional models. However, some information about processes in the sheath derived by simplified models is at least qualitatively correct.

Influence of substrate geometry on the magnetic properties of CoP cylindrical multilayers

CoP multilayers have been electrodeposited on Cu wires. By applying external torsion, it is possible to induce helical anisotropies that become permanent when the torsion is removed. These anisotropies and consequently the magnetization process can be controlled by the magnitude of the torsion. The induced Matteucci effect makes the samples suitable as nuclei for magnetic sensors.

The influence of substrate geometry on the emission properties of a liquid metal ion source

The effect of needle radius, cone angle and shaft diameter on the threshold voltage and angular intensity — total current relationships for a Ga liquid-metal ion source (LMIS) was investigated. The variation of threshold voltage with needle geometry could be described in terms of the Taylor theory of liquid cone formation by electrostatic fields. The beam energy spread was mainly a function of total source current and was not a sensitive function of emitter geometry. Source angular intensity at a constant total current increased linearly with threshold voltage when the latter was altered due to source geometry.