Influence Of Magnetic Quantization Research Articles

Supersonic Shock Wave with Landau Quantization in a Relativistic Degenerate Plasma**Supported by Manoj Kumar Deka from DST-SERB of India under Grant No YSS/2015/001896.

A three-dimensional (3D) Burgers’ equation adopting perturbative methodology is derived to study the evolution of a shock wave with Landau quantized magnetic field in relativistic quantum plasma. The characteristics of a shock wave in such a plasma under the influence of magnetic quantization, relativistic parameter and degenerate electron density are studied with assistance of steady state solution. The magnetic field has a noteworthy control, especially on the shock wave’s amplitude in the lower range of the electron density, whereas the amplitude in the higher range of the electron density reduces remarkably. The rate of increase of shock wave potential is much higher (lower) with a magnetic field in the lower (higher) range of electron density. With the relativistic factor, the shock wave’s amplitude increases significantly and the rate of increase is higher (lower) for lower (higher) electron density. The combined effect of the increase of relativistic factor and the magnetic field on the strength of the shock wave, results in the highest value of the wave potential in the lower range of the degenerate electron density.

Influence of Magnetic Quantization on the Quantum Capacitance in MOSFET Devices Under Accumulation Mode

Influence of Magnetic Quantization on the Quantum Capacitance in MOSFET Devices Under Accumulation Mode

Influence of magnetic quantization on the Einstein relation in non-linear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestion for experimental determination

In this paper, we have investigated the Einstein relation for the diffusivity-to-mobility ratio (DMR) under magnetic quantization in non-linear optical materials on the basis of a newly formulated electron dispersion law by considering the crystal field constant, the anisotropies of the momentum-matrix element and the spin–orbit splitting constant, respectively, within the frame work of k·p formalism. The corresponding result for the three-band model of Kane (the conduction electrons of III–V, ternary and quaternary compounds obey this model) forms a special case of our generalized analysis. The DMR under magnetic quantization has also been investigated for II–VI (on the basis of Hopfield model), bismuth (using the models of McClure and Choi, Cohen, Lax and parabolic ellipsoidal, respectively), and stressed materials (on the basis of model of Seiler et al.) by formulating the respective electron statistics under magnetic quantization incorporating the respective energy band constants. It has been found, taking n-CdGeAs 2, n-Hg 1− x Cd x Te, p-CdS, and stressed n-InSb as examples of the aforementioned compounds, that the DMR exhibits oscillatory dependence with the inverse quantizing magnetic field due to Subhnikov de Haas (SdH) effect with different numerical values. The DMR also increases with increasing carrier degeneracy and the nature of oscillations are totally dependent on their respective band structures in various cases. The classical expression of the DMR has been obtained as a special case from the results of all the materials as considered here under certain limiting conditions, and this compatibility is the indirect test of our generalized formalism. In addition, we have suggested an experimental method of determining the DMR for degenerate materials under magnetic quantization having arbitrary dispersion laws. The three applications of our results in the presence of magneto-transport have further been suggested.

Influence of magnetic quantization on the effective electron mass in Kane-type semiconductors

We study the effective electron mass at the Fermi level in Kane-type semiconductors on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction electrons, heavy holes, light holes and split-off holes, respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model. It is found, takingn-Hg1−xCdxTe as an example, that the effective electron mass at the Fermi level in accordance with fourth-order model depends on the Fermi energy, magnetic quantum number and the electron spin respectively due to the influence of band nonparabolicity only. The dependence of effective mass on electron spin is due to spin-orbit splitting parameter of the valence band in three-band Kane model and the Fermi energy due to band nonparabolicity in two-band Kane model. The same mass exhibits an oscillatory magnetic-field dependence for all the band models as expected since the origin of oscillations in the effective mass in nonparabolic compounds is the same as that of the Shubnikov-de Hass oscillations. In addition, the corresponding results for parabolic energy bands have been obtained from the generalized expressions under certain limiting conditions.

Influence of magnetic quantization on the effective mass in semiconductor superlattices

An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in a semiconductor superlattice at low temperatures. It is found on the basis of the tight-binding approximation, taking GaAs-Ga1−xAlxAs an example, that the effective mass at the Fermi level depends on the magnetic quantum number due to the cosine dependence of the wave-vector in the superlattice direction. The mass also exhibits oscillatory features in the presence of magnetic quantization because of its dependence on Fermi energy which oscillates with changing magnetic field.

Influence of Magnetic Quantization on the Effective Electron Mass in Ternary Semiconductors

AbstractAn attempt is made to study the effect of a quantizing magnetic field on the effective mass in degenerate n‐type ternary semiconductors at low temperatures taking n‐Hg1−xCdxTe as an example. It is found on the basis of the three‐band Kane model, which is the most valid model for n‐Hg1−xCdxTe, that the effective electron mass at the Fermi level shows an oscillatory magnetic field dependence as expected since the origin of the oscillations in the effective mass in small gap semiconductors is the same as that of the Shubnikov‐de Hass oscillations. Besides, the amplitude of oscillations is significantly influenced by the alloy composition whereas the period is found to be independent of the compositional parameters in ternary semiconductors. The corresponding results for parabolic energy bands are also obtained from the expressions derived.

Influence of Magnetic Quantization on the Effective Electron Mass in Zero‐Gap Semiconductors

Influence of Magnetic Quantization on the Effective Electron Mass in Zero‐Gap Semiconductors

On the oscillatory nature of the Debye screening length in degenerate semiconductors under magnetic quantization

The nature of the magnetic field dependence of the Debye screening length in degenerate semiconductors is shown to be oscillatory under the influence of magnetic quantization.

Influence of magnetic quantization on the debye screening length in degenerate semiconductors having parabolic energy bands

The Debye screening length in degenerate semiconductors having parabolic energy bands is shown for the first time to have an oscillatory dependence on magnetic field under the influence of Landau quantization when the higher lying sub-bands are occupied.

Influence of magnetic quantization on the diffusivity of the carriers in degenerate semiconductors

The nature of the magnetic field dependence of the diffusivity of the carriers in degenerate semiconductors is shown to be oscillatory under the influence of magnetic quantization.

Generalized expression for the debye screening length in semiconductors under the influence of magnetic quantization

physica status solidi (a)Volume 25, Issue 2 p. K105-K108 Short Note Generalized expression for the debye screening length in semiconductors under the influence of magnetic quantization A. N. Chakravarti, A. N. Chakravarti Institute of Radio Physics and Electronics, University College of Science and Technology, CalcuttaSearch for more papers by this author A. N. Chakravarti, A. N. Chakravarti Institute of Radio Physics and Electronics, University College of Science and Technology, CalcuttaSearch for more papers by this author First published: 16 October 1974 https://doi.org/10.1002/pssa.2210250248Citations: 18AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume25, Issue216 October 1974Pages K105-K108 RelatedInformation

On the oscillatory nature of the magnetic field dependence of the diffusivity-mobility ratio in degenerate semiconductors under the influence of magnetic quantization

On the oscillatory nature of the magnetic field dependence of the diffusivity-mobility ratio in degenerate semiconductors under the influence of magnetic quantization