Induced Density Of Interface States Model Research Articles

C6H6/Au(111): Interface dipoles, band alignment, charging energy, and van der Waals interaction

We analyze the benzene/Au(111) interface taking into account charging energy effects to properly describe the electronic structure of the interface and van der Waals interactions to obtain the adsorption energy and geometry. We also analyze the interface dipoles and discuss the barrier formation as a function of the metal work-function. We interpret our DFT calculations within the induced density of interface states (IDIS) model. Our results compare well with experimental and other theoretical results, showing that the dipole formation of these interfaces is due to the charge transfer between the metal and benzene, as described in the IDIS model.

First-principles study of benzene on noble metal surfaces: Adsorption states and vacuum level shifts

We have studied the interaction of benzene with Cu(1 1 1), Ag(1 1 1) and Au(1 1 1) surfaces using density functional theory (DFT) within a generalized gradient approximation (GGA) and the van der Waals density functional [vdW-DF; M. Dion, H. Rydberg, E. Schröder, D.C. Langreth, B.I. Lundqvist, Phys. Rev. Lett. 92 (2004) 246401]. The adsorption energies using vdW-DF are significantly more accurate than those using GGA, while the equilibrium adsorption distances between benzene and metal substrates ( Z C eq ) calculated by both GGA and vdW-DF are almost identical. The work function changes induced by the adsorption of benzene are significantly underestimated compared with the experimental values, as a result of the overestimation of Z C eq by both GGA and vdW-DF. Instead of determining the Z C eq values from first-principles calculations, we deduced the most probable adsorption distances in such a way as to reproduce the experimentally-observed work function changes. The deduced adsorption distance ( Z C ded ) is shortest on Cu(1 1 1) while it is longest on Ag(1 1 1), reflecting the strength of the interactions between benzene and the metal surfaces. It turns out that the substrate dependence of the work function change is mainly ascribed to the difference in the benzene–metal distance ( Z C). Charge transfer and work function changes by the adsorption of benzene were analyzed by means of the induced density of interface states (IDIS) model [H. Vázquez, R. Qszwaldowski, P. Pou, J. Ortega, R. Pérez, F. Flores, A. Kahn, Europhys. Lett. 65 (2004) 802], and compared with the self-consistent GGA calculations. The vacuum level shifts estimated by the IDIS model agree with the GGA results for Z C ⩾ 0.3 nm . On the other hand, the discrepancy between the two methods becomes larger for Z C ⩽ 0.3 nm , where the back donation from the metal substrates to the adsorbate becomes significant. We show that the IDIS model reasonably works well for benzene on Cu(1 1 1), Ag(1 1 1) and Au(1 1 1) surfaces because Z C ded ≈ 0.3 nm on all surfaces. However, our analysis reveals that the actual charge density redistribution induced by the adsorption of benzene is more complicated than that assumed in the IDIS model.

Modelling energy level alignment at organic interfaces and density functional theory

A review of our theoretical understanding of the band alignment at organic interfaces is presented with particular emphasis on the metal/organic (MO) case. The unified IDIS (induced density of interface states) and the ICT (integer charge transfer) models are reviewed and shown to describe qualitatively and semiquantitatively the barrier height formation at those interfaces. The IDIS model, governed by the organic CNL (charge neutrality level) and the interface screening includes: (a) charge transfer across the interface; (b) the "pillow" (or Pauli) effect associated with the compression of the metal wavefunction tails; and (c) the molecular dipoles. We argue that the ICT-model can be described as a limiting case of the unified IDIS-model for weak interface screening. For a fully quantitative understanding of the band alignment at organic interfaces, use of DFT (density functional theory) or quantum chemistry methods is highly desirable. In this Perspective review, we concentrate our discussion on DFT and show that conventional LDA or GGA calculations are limited by the "energy gap problem of the organic materials", because the LDA (or GGA) Kohn-Sham energy levels have to be corrected by the self-interaction energy of the corresponding wavefunction, to provide the appropriate molecule transport energy gap. Image potential and polarization effects at MO interfaces tend to cancel these self-interaction corrections; in particular, we show that for organic molecules lying flat on Cu and Ag, these cancellations are so strong that we can rely on conventional DFT to calculate their interface properties. For Au, however, the cancellations are weaker making it necessary to go beyond conventional DFT. We discuss several alternatives beyond conventional LDA or GGA. The most accurate approach is the well-known GW-technique, but its use is limited by its high demanding computer time. In a very simple approach one can combine conventional DFT with a "scissor" operator which incorporates self-interaction corrections and polarization effects in the organic energy levels. Hybrid potentials combined with conventional DFT represent, probably, the best alternative for having a simple and accurate approach for analyzing organic interfaces. The problem then is to find an appropriate one for both the metal and the organic material in a plane-wave formulation; we show, however, how to overcome this difficulty using a local-orbital basis formulation. As examples of these alternatives, we present some DFT-calculations for several organic interfaces, using either the scissor operator or a hybrid potential, which can be interpreted in terms of the unified IDIS-model.

A unified model for metal/organic interfaces: IDIS, ‘pillow’ effect and molecular permanent dipoles

A unified model, embodying the induced density of interface states (IDIS) model, the reduction of the metal work function due to the adsorbed molecules (‘pillow’ effect) and molecular permanent dipoles, is presented for describing the barrier formation at metal/organic interfaces. While the IDIS model and ‘pillow’ effect have been described in previous approaches, in this paper we show how to introduce molecular permanent dipoles in the interface barrier formation. Examples for Au or Al/organic interfaces are discussed, which show the validity of our results and the generality of our formalism.

Electronic Structure of Interfaces

A discussion of the theoretical models trying to explain the semiconductor interfaces formation is presented. Metal-semiconductor and semiconductor-semiconductor junctions are discussed. While the metal-semiconductor interface is worse known due to the uncertainties in the chemisorption sites of the metal on the semiconductor surface, heterojunctions are better understood. We discuss the results obtained with different methods used to calculate heterojunctions band offsets: the induced density of interface states model (IDISM), the selfconsistent tight-binding model (SCTBM) and the selfconsistent local density method (SCLDM) are considered; all of them yield results in good agreement with the experimental evidence. The band offset accuracy for low ionicity semiconductors is higher in the SCLDM (better than 0.05 eV) and lower in the IDISM (better than 0.20 eV), while the SCTBM yields results with an intermediate accuracy, better than 0.1 eV.