Indium phosphide nanowires (InPNWs) with an average diameter size of 87 nm were successfully synthesised through thermal chemical vapour deposition (CVD) method. The InPNWs were synthesised by reacting indium metalloid and red phosphorus at 600 °C. They were synthesised possessing residual stress defects such as stacking faults. However, in this study we demonstrated how to control the generation and distribution of these defects by using indium metalloid catalyst and a modified synthesis technique. The synthesis technique was optimised to control the crystal structure, morphology, and size distribution. A single indium phosphide nanowire back-gated electronic device was fabricated using electron beam lithography. The device had resistivity of 50 Ω.cm, which confirmed that the electrical properties of indium phosphide nanowire was intact despite the presence of residual defects. The InPNWs were tested for gas sensing, and they were found to have response time of 320 s for nitric oxide gas (NO2)