Indium Oxide Coated Glass Substrates Research Articles

FABRICATION AND CHARACTERIZATION OF DYE-SENSITIZED SOLAR CELLS BASED ON MUREXID DYE AND INORGANIC CdS:Mn THIN FILMS

In this study, dye-sensitized solar cells (DSSCs) were designed utilizing Murexid dye as an absorbing material and manganese doped cadmium sulfide (CdS:Mn) thin films as transparent layers. The CdS:Mn thin films were synthesized on tin doped indium oxide coated glass substrates (ITO) at 90 ºC using chemical bath deposition method (CBD). The Mn-doping process was carried out at concentrations of 0%, 2%, 4% and 6% (in molar ratio of manganese ions to cadmium ions). The structural, morphological and optical properties of the CdS:Mn thin films were examined using x-ray diffractometer (XRD), atomic force microscope (AFM) and UV–visible absorption spectrometer. The effect of the nanoparticle size on the cell performance of DSSC was investigated by J-V curves. The results regarding electrical measurements indicated that the maximum efficiency of 3.40%. Our experimental results suggested that this heterojunction can be a good candidate for DSSCs.

Synthesis and characterization of CdS window layers for PbS thin film solar cells

Window layers, cadmium sulfide (CdS) thin films were synthesized on tin doped indium oxide coated glass substrates (ITO) with two different temperatures of 85 °C and 90 °C and ammonium hydroxide concentration of 1 M and 9.96 M, respectively via the chemical bath deposition (CBD) method, while absorption layers, lead sulfide (PbS) thin film were deposited on ITO substrates at room temperature using the successive ionic layer absorption and reaction (SILAR) technique. Then, these layers were integrated in ITO/CdS/PbS/Ag solar cell structures. The structural, morphological and optical properties of the thin films as well as electrical properties of the solar cells were investigated. X-ray diffraction studies showed that the CdS thin films have hezagonal structure while PbS thin films have cubic structure. The photovoltaic performance of the solar cells showed that the solar cell fabricated with CdS film deposited at 90 °C exhibited higher efficiency (η) of 4.85% including JSC = 12.44 mA cm−2, VOC = 1 V, FF = 0.39 than the CdS film deposited at 85 °C (η = 3.59%, JSC = 9.43 mA cm−2, VOC = 1 V, FF = 0.38. These results reveal that the crystal structure, surface morphology and optical properties of CdS thin film have a significiant effect on device performance and the solar cell fabricated using CdS film deposited at 90 °C shows better photovoltaic performance.

Effect of tin-doped indium oxide film on electrodeposition of ZnO nanostructures

Surface studies are reported for the deposition of ZnO nanostructures by one-step electrodeposition method. The electrosynthesis was perfomed at the surface of tin doped indium oxide coated glass substrates in the absence of any buffer layer. The growth of ZnO nanostructures was investigated with the morphology of substrate and the deposition mode. Combined nucleation mode was observed for the ZnO independently of substrate. The results indicated the growth, morphology and density of the ZnO nanostructures are markedly influenced by both the substrate and the deposition conditions. It was observed the ZnO formation is defect site driven in case of galvanostatic deposition mode, while in case of potentiostatic deposition mode, it is dependent on the roughness of the substrate.

Solution processed TiO2/BiFeO3/poly(3-hexylthiophene) solar cells

We report the fabrication of solar cells by spin-coating and annealing sol–gel layers of TiO2 and BiFeO3 on indium oxide coated glass substrates. A layer of poly(3-hexylthiophene) was spin coated onto the inorganic layers to form hybrid organic–inorganic solar cells. X-ray powder diffraction revealed the BiFeO3 layers are polycrystalline with rhombohedral texture and average crystallite size about 20nm. Scanning electron microscopy images showed the films are granular and microporous. Irradiation with visible light resulted in a photocurrent of 0.05mAcm−2 and an open circuit voltage of −0.46V.

Defect reduction in electrochemically deposited CdS thin films by annealing in 0 2

Using the electrochemical deposition method, CdS thin films were deposited from acid solutions (pH = 2.5) containing CdS0 4 and Na 2S 20 3 on indium-oxide coated glass substrates. These films were annealed in N 2, air, or O 2 atmosphere at 200–500°C for 30 min. Photoluminescence spectra were measured at 77 K. For the films annealed in N 2, the band edge emission became weaker and the luminescence due to defects shifted to longer wavelengths as the annealing temperature was raised above 300°C. However, for the films annealed in air or O 2, the band edge emission was observed strongly irrespective of the annealing temperature and the luminescence due to defects was weak. Thus the O 2 annealing is useful for the defects reduction.

Topology of obliquely coated silicon monoxide layers

Silicon monoxide layers, coated at oblique angles of 45°–87° onto indium oxide coated glass substrates, are examined by TEM for angularly dependent surface topology. ’’Striations’’ observed at angles near 81° are discussed in terms of the aligning influence that these features exert upon nematic liquid crystals. Included are photomicrographs of these striations as well as of a ’’scale’’ feature observed at angles greater than 83°. Existence of the ’’scale’’ feature is correlated to previously observed asymmetric diffuse diffraction effects.