Gallium (Ga) is an indispensable electronic material for devices such as light-emitting diodes, and the demand for Ga is expected to increase. In this study, a comparative analysis was carried out on Ga(III) extraction by neutral ketones and ethers in the presence of highly concentrated hydrochloric acid (HCl). Generally, Ga(III) extractability was high using aliphatic and aromatic ketones. By comparison, Ga(III) extractability was lower using monoether compounds. High Ga(III) extractability was obtained using aromatic 1,2-diethers. Suitable solvents for Ga extraction were screened based on Hansen solubility parameters. 2-Nonanone (2-NON), an aliphatic ketone, was found to have a high extraction capacity (more than 95 mM) competitive with dibutyl carbitol. The physical properties of 2-NON a low water solubility (0.5 g dm−3), low viscosity (1.3 mPa·s), and a sufficiently high flash point (76 °C) are suitable for industrial processes. Ga(III) and Fe(III) were selectively extracted using 2-NON and other solvents. Ga(III) extracted using 2-NON was quantitatively stripped by contact with aqueous solutions with low HCl concentrations. 2-NON was used to separate Ga(III) from a mixed solution of metal ions to investigate recycling copper indium gallium diselenide solar cells. Ga(III) was selectively extracted from the mixture with over 90 % stripping. The concentrations of the metal ions in the stripping solutions were 1.0 mM for Cu(II), 9.9 mM for In(III), 56.7 mM for Ga(III), and 0.02 mM for Se(IV), suggesting that 2-NON can be used for Ga(III) separation.