Increase In Hole Mobility Research Articles

Regiospecific Incorporation of Fluorine Atoms in Polythiophene Derivatives for Efficient Organic Solar Cells.

Derivatives of polythiophene (PT) have garnered considerable attention in organic solar cells (OSCs) because of their relatively uncomplicated molecular structures and cost-effective synthesis. Herein, we have developed two regioisomeric fluorinated PT donors, PEI3T-FITVT and PEI3T-FOTVT, to realize efficient OSCs. PEI3T-FITVT and PEI3T-FOTVT are strategically designed with different fluorine atom arrangements on thiophene-vinyl-thiophene (TVT) units. Notably, PEI3T-FOTVT possesses enhanced backbone planarity induced by F···S noncovalent interactions between two constituent building blocks. Consequently, PEI3T-FOTVT with the higher aggregation and crystalline properties leads to a 2.5-fold increase in hole mobility over PEI3T-FITVT (from 1.4 × 10-4 to 3.6 × 10-4 cm2 V-1 s-1). Furthermore, PEI3T-FOTVT exhibits higher domain purity than PEI3T-FITVT, leading to faster charge transport and reduced charge recombination in OSC devices. These characteristics lead to a higher power conversion efficiency of 14.4% for PEI3T-FOTVT-based OSCs, compared to 12.9% for PEI3T-FITVT-based OSCs.

Multiscale Analyses of Strain-Enhanced Charge Transport in Conjugated Polymers.

The advancement of flexible and wearable electronics relies on semiconducting polymers that can endure mechanical deformation while maintaining high electrical performance under strain. In this study, we demonstrate that fine-tuning backbone rigidity through the molecular design of donor moieties significantly enhances both the mechanical and charge transport properties of diketopyrrolopyrrole (DPP)-based polymers. Specifically, the flexible DPP-4T (quaterthiophene) exhibited a persistence length of 20.4 nm in solution, while DPP-DTT (dithienothiophene) showed a longer persistence length of 32.8 nm due to its stiff backbone, as confirmed by small-angle neutron scattering and Monte Carlo simulations. This flexibility enabled DPP-4T to achieve a crack-onset strain exceeding 100% via the film-on-elastomer method and a fracture strain of over 30% in quasi-free-standing films. Additionally, DPP-4T demonstrated a 180% increase in hole mobility at 80% strain, driven by strain-induced chain alignment and backbone planarization. Utilizing a range of characterization techniques, including ultraviolet-visible (UV-vis) spectroscopy, grazing incidence X-ray diffraction (XRD), and Raman spectroscopy, we characterized structural changes at multiple length scales under applied tensile strain. Notably, strain induced a transformation in chain conformation from a twisted to a flat structure, reducing the hopping energy barrier and enhancing charge transport. These structural rearrangements are crucial for sustaining efficient charge transport and ensuring the reliability of electronic performance under mechanical stress.

Band order reversal and valley engineering driving to dual high electron and hole mobility in strained monolayer BS

Strain engineering is an effective method to tune the physical properties of materials. In this work, we found that applying 5% biaxial compression to monolayer boron sulfur can simultaneously induce a band order reversal of valence bands and valley engineering of conduction bands. This change significantly enhances the room temperature intrinsic mobility, boosting it from 2 to 260 cm2 V−1 s−1 for holes and 63 to 543 cm2 V−1 s−1 for electrons. The high hole mobility surpasses that of bulk GaN and silicon. We further demonstrate that the valence band order reversal not only lifts the px/y state above the pz states, giving to a more dispersive highest valence band, and thus smaller electron scattering channels and hole effective mass, but also shifts the stronger σz bonding to weaker π-bonding characteristics, resulting in smaller electron–phonon coupling strength. Those combined effects results in a substantial increase in hole mobility.

Enhanced Carrier Lifetime and Mobility in Monolayer NbOI2.

The lifetime and mobility of hot carriers are critical parameters for assessing the performance of optoelectronic materials, as they directly impact the response speed and operational efficiency of devices. Combining first-principles calculations with nonadiabatic molecular dynamics (NAMD) simulations, we systematically investigated the electronic properties and carrier dynamics of monolayer NbOI2. Our findings indicate that, at room temperature, this material demonstrates a carrier lifetime of up to ∼13 ns and an electron mobility reaching as high as ∼9 × 103 cm2 V-1 s-1. The low Young's modulus makes it susceptible to deformation under external stress, and we found that the carrier lifetime extends to ∼40 ns under a 4% tensile strain, along with a significant increase in hole mobility. This study elucidates the carrier dynamics in monolayer NbOI2, facilitating its potential application in future flexible optoelectronic devices.

High-Yield Exfoliation of Stanene Nanodots for High-Performance Organic Light-Emitting Diodes.

Stanene nanodots (SnNDs) derived from layered tin have attracted considerable interest due to their conveniently tunable bandgap and topological superconductivity. However, high-yield exfoliation of ultrathin SnNDs is still a challenge due to the short layer spacing and strong binding energy. In this work, atomically thin SnNDs with a uniform size of 2.3 nm are successfully prepared by utilizing imidazolium ionic liquid-assisted exfoliation. The obtained SnNDs possess a wide bandgap of 2.69 eV, along with notable solvent compatibility (well dispersed in both polar and nonpolar solvents) and excellent stability. Furthermore, we construct Ir(ppy)3-based green OLED with hybridizing SnNDs and graphene oxide (GO) as the hole injection layer (HIL). It proves that the application of SnNDs helps to modulate the work function and passivate surface defects of GO, increasing hole mobility and thereby improving the device performance. Compared to the PEDOT:PSS-based control device, the optimized SnNDs-GO-based OLED demonstrates an improvement of 6.56, 41.06, and 8.16% in current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. This work not only introduces a new approach to preparing 2D SnNDs but also creates a novel HIL material for OLED devices.

Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

Modern electronic and optoelectronic devices rely on the development of the complementary pair of n-type and p-type semiconductors. However, it is often seen that n-type semiconductors are easier to realize and offer superior performances than their p-type counterparts, with p-type semiconductors showing much lower hole mobility and inefficient carrier doping. Here, by using first-principles studies, we demonstrate that lattice strain engineering can be a universal approach to enhance the hole mobility and dopability in p-type semiconductors. A broad class of p-type semiconductors, including anion p orbital derived valence band compounds (nitrides, oxides, halides, and chalcogenides), s orbital based post-transition metal oxides (e.g., SnO), and d-orbital based transition metal oxides (e.g., NiO), have been applied on strain to demonstrate their valence band modulation ability for the purpose of increasing the hole mobility and p-type dopability. We show that compressive lattice strain generally results in an upshifted valence band edge and reduced effective hole mass, leading to enhanced p-type dopability and increased hole mobility. Our work highlights strain engineering as a universal and effective approach for achieving better performed p-type compound semiconductors.

Hierarchical self-constructed molecular layers of small bifunctional molecules with strong molecular dipole moments for improvement of quantum efficiency in inorganic quantum dots

Hierarchically structured self-assembled molecular layers are functionally versatile and structurally tunable, which are nanoscale molecular building blocks with a wide range of applications from biosensing systems to optoelectronic devices. Herein, we present a facile and effective strategy to fabricate hierarchical self-constructed molecular layers comprising small bifunctional molecules with strong molecular dipole moments for improvement of quantum efficiency in inorganic quantum dots (QDs) by using the cooperative interfacial self-assembly of hydrophilic bifunctional molecules on the polar electrode surface. The spontaneous construction of nanostructured molecular layers with different molecular dipole moments was simply achieved through solution-dipping and in situ interfacial self-organization of 3-mercaptopropionic acid or 1-propanethiol molecules on the surface of indium tin oxide (ITO) anode. It is experimentally revealed that these functional molecules formed uniform and ultrathin self-constructed molecular nanolayers on the ITO surface via covalent bonding, where bifunctional 3-mercaptopropionic acid molecules induced a polar molecular surface of thiol groups with strong dipole moments, whereas 1-propanethiol molecules formed a relatively hydrophobic surface of short alkyl chains with weak dipole moments. In addition, the nanoscale ultrathin nature of these molecular layers afforded high visible light transmittance comparable to that of pristine ITO substrate. The electro-optical properties of the QD cells revealed that hierarchical self-constructed molecular nanolayer with strong molecular dipole moments exhibited superior current and luminescent properties with a 162% improvement in external quantum efficiency relative to those of a conventional QD device without molecular layer. Furthermore, the self-assembled molecular nanolayer of 3-mercaptopropionic acid exhibited a higher luminescent efficiency than 1-propanethiol-based nanolayer owing to the increased hole mobility of thiol-based molecular layer with strong dipole moments.

Molecular packing regulation of dopant-free hole transport polymers for efficient perovskite solar cells

Spiro-OMeTAD is a primary hole transport material (HTM) employed in most state-of-the-art regular perovskite solar cells (PSCs). The essential reliance on hygroscopic ionic dopants to enhance the conductivity and mobility of Spiro-OMeTAD has dramatically compromised the stability of PSCs. Here, we demonstrated excellent photovoltaic performance of PSCs by developing two dopant-free polymers, namely L1 and L2, using thieno[3,2-b]thiophene as a building block. It is found that the n-hexyl-modified thiophene side chains endow the polymer L2 with favorable crystallinity, unique self-assembly behavior, and a preferable face-on stacking orientation. After the addition of a small amount (10 %) of PM6 to create a polymer alloy named LPA, the above properties were further improved, and the resulting film exhibited a distinct fibrous morphology, resulting in increased hole mobility and effective defect passivation. Consequently, PSCs employing LPA as a dopant-free HTM afforded a high efficiency of 23.81 %. Importantly, LPA-based PSCs exhibit significantly enhanced operational stability with a T80 lifetime of 1572 h at 55 °C. This work provides a crucial guideline for the design of dopant-free polymers, thereby advancing the practical application of PSCs.

Tackling P3HT:Y‐Series Miscibility Through Advanced Processing for Tunable Aggregation

AbstractPolymer and small molecule blend thin films are of strong interest for organic electronics and particularly organic solar cells. The high miscibility in blends of ordinary P3HT and state‐of‐the‐art Y‐series non‐fullerene acceptors (NFAs) suppresses phase separation and aggregation challenging successful charge separation and transport. In a recent work, current‐induced doping (CID) is introduced, a method to precisely control the aggregation of Poly(3‐hexylthiophene) (P3HT) in solution. The highly ordered pre‐aggregation in solution is used here to control the P3HT aggregation in neat films and blends with Y12 (BTP‐4F‐12). This results in a 25‐fold increase in hole mobility in P3HT organic field‐effect transistor (OFET) devices and tunability of the P3HT aggregate quality in the presence of Y12 over large ranges. At the same time, particularly the Y12 long‐range ordering is heavily suppressed by increasing P3HT aggregation. However, solvent vapor annealing (SVA) leads to an extraordinarily high Y12 ordering, changes in the crystal orientation of Y12, and a further improvement of P3HT aggregation. A broad range of different degrees of aggregation of both materials can therefore be obtained in the final thin films solely by changing processing parameters without changing the composition of the material system.

Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing

In presented work, a reactive high-power impulse magnetron sputtering (r-HiPIMS) was used for high-rate deposition (≈ 170 nm/min) of Cu2O films. Films were deposited on a standard soda-lime glass (SLG) substrate at a temperature of 190 °C. As-deposited films exhibit poor hole mobility in the orders of ≈ 1 cm2/Vs. We have systematically studied the effect of laser thermal annealing (LTA) procedure performed using high-power infrared laser under different laser parameters (number of pulses, length of the pulse). We have found, LTA procedure could significantly enhance the hole mobility (up to 24 cm2/Vs in our case). We have also fitted the results of a temperature-dependent Hall measurement to clarify the mechanism of the reported increase in hole mobility. Moreover, we have discussed the effect of the LTA procedure on microstructure (crystallinity, surface morphology) and on the value of optical band gap.

Unraveling the Molecular Weight Dependence of High Magnetic Field to Manipulate the Semiconducting Polymer Molecular Orientation.

The magnetic alignment of molecules, which exploits the anisotropy of diamagnetic susceptibility, provides a clean and versatile approach to the structural manipulation of semiconducting polymers. Here, the magnetic-alignment dynamics of two molecular-weight (MW) batches of a diketopyrrolopyrrole (DPP)-based copolymer (PDVT-8) were investigated. Microstructural characterizations revealed that the magnetically aligned, high-MW (Mn = 53.7 kDa) PDVT-8 film exhibited a higher degree of backbone chain alignment and film crystallinity compared with the low-MW (Mn = 17.6 kDa) PDVT-8 film grown via the same magnetic alignment method. We found that as the MW increases, the degree of preaggregation of the polymer molecules in solution significantly increases and the aggregation mode changes from H-aggregation to J-aggregation through a cooperative assembly mechanism. These events improved the responsiveness of high-MW polymer molecules to magnetic fields. Field-effect transistors based on the magnetic aligned high-MW PDVT-8 films exhibited a 6.8-fold increase in hole mobility compared to the spin-coated films, along with a mobility anisotropy ratio of 12.6. This work establishes a significant correlation among chain aggregation behavior in solution, polymer film microstructures, magnetic responsiveness, and carrier transport performance in donor-acceptor polymer systems.

Photo-Cross-Linked Fullerene-Based Hole Transport Material for Moisture-Resistant Regular Fullerene Sandwich Perovskite Solar Cells.

Despite the high efficiencies currently achieved with perovskite solar cells (PSCs), the need to develop stable devices, particularly in humid conditions, still remains. This study presents the synthesis of a novel photo-cross-linkable fullerene-based hole transport material named FT12. For the first time, the photo-cross-linking process is applied to PSCs, resulting in the preparation of photo-cross-linked FT12 (PCL FT12). Regular PSCs based on C60-sandwich architectures were fabricated using FT12 and PCL FT12 as dopant-free hole transport layers (HTLs) and compared to the reference spiro-OMeTAD. The photovoltaic results demonstrate that both FT12 and PCL FT12 significantly outperform pristine spiro-OMeTAD regarding device performance and stability. The comparison between devices based on FT12 and PCL FT12 demonstrates that the photo-cross-linking process enhances device efficiency. This improvement is primarily attributed to enhanced charge extraction, partial oxidation of the HTL, increased hole mobility, and improved layer morphology. PCL FT12-based devices exhibit improved stability compared to FT12 devices, primarily due to the superior moisture resistance achieved through photo-cross-linking.

Fabrication of phase-pure and large-grained Cu3BiS3 films by a two-stage process for thin film solar cells

Copper-bismuth-sulfide (Cu3BiS3) has gained great interest as solar cell absorber owing to the advantages of being cheap, abundant, and non-toxic. Fabrication of phase-pure and large-grain absorbers are desirable for their integration in solar cells. Herein, we have used a sequential evaporation and chalcogenization (350–450 oC) process to fabricate phase-pure and large-grain Cu3BiS3 films. X-ray diffraction indicated a CuS secondary phase at 350 °C and single-phase Cu3BiS3 at 400 and 450 °C in the sulfurized films. Elemental analysis revealed a near-stoichiometric Cu3BiS3 composition for all the films. X-ray photoelectron spectroscopy was used to assess the valence states of elements. Microstructural analysis confirmed the formation of compact and large-grained Cu3BiS3 films with an average grain size of 5 μm at 350 °C. The grain size decreased with increasing sulfurization temperature (400–450 °C). The direct bandgap decreases from 1.42 eV to 1.32 eV with increasing sulfurization temperature from 350 to 450 °C. Hall measurements indicated decreased electrical resistivity and increased hole mobility and carrier concentration with increasing the sulfurization temperature. From this study, the Cu3BiS3 absorbers produced at 400 oC exhibited superior phase purity and good quality suitable for the solar cells.

Optimizing Energy Levels and Improving Film Compactness in PbS Quantum Dot Solar Cells by Silver Doping.

PbS quantum dot (QD) solar cells harvest near-infrared solar radiation. Their conventional hole transport layer has limited hole collection efficiency due to energy level mismatch and poor film quality. Here, how to resolve these two issues by using Ag-doped PbS QDs are demonstrated. On the one hand, Ag doping relieves the compressive stress during layer deposition and thus improves film compactness and homogeneity to suppress leakage currents. On the other hand, Ag doping increases hole concentration, which aligns energy levels and increases hole mobility to boost hole collection. Increased hole concentration also broadens the depletion region of the active layer, decreasing interface charge accumulation and promoting carrier extraction efficiency. A champion power conversion efficiency of 12.42% is achieved by optimizing the hole transport layer in PbS QD solar cells, compared to 9.38% for control devices. Doping can be combined with compressive strain relief to optimize carrier concentration and energy levels in QDs, and even introduce other novel phenomena such as improved film quality.

Effect of substituting donors on the hole mobility of hole transporting materials in perovskite solar cells: a DFT study.

Several hole-transporting materials (HTMs) have been designed by incorporating different types of π-conjugation group such as long chain aliphatic alkenes and condensed aromatic rings of benzene and thiophene and their derivatives on both sides between the planar core and donor of a reference HTM. Various electronic, optical, and dynamic properties have been calculated by using DFT, TDDFT, and Marcus theory. In this study, all the designed HTMs show a lower HOMO energy level and match well with the perovskite absorbers. Inserting condensed rings results in better hole mobility compared to aliphatic double bonds. It is found that the charge transfer integral is the dominant factor which mainly influences the hole mobility in our studied HTMs. Other factors such as hole reorganization energy, hole hopping rate, and centroid distance have a minor effect on hole mobility. Thus, this study is expected to provide guidance for the design and synthesis of new HTMs with increased hole mobility.

Facile Blending Strategy for Boosting the Conjugated Polymer Semiconductor Transistor's Mobility.

The optimization of field-effect mobility in polymer field-effect transistors (FETs) is a critical parameter for advancing organic electronics. Today, many challenges still persist in understanding the roles of the design and processing of semiconducting polymers toward electronic performance. To address this, a facile approach to solution processing using blends of PDPP-TVT and PTPA-3CN is developed, resulting in a 3.5-fold increase in hole mobility and retained stability in electrical performance over 3 cm2 V-1 s-1 after 20 weeks. The amorphous D-A conjugated structure and strong intramolecular polarity of PTPA-3CN are identified as major contributors to the observed improvements in mobility. Additionally, the composite analysis by X-ray photoelectron spectroscopy (XPS) and the flash differential scanning calorimetry (DSC) technique showed a uniform distribution and was well mixed in binary polymer systems. This mobility enhancement technique has also been successfully applied to other polymer semiconductor systems, offering a new design strategy for blending-type organic transistor systems. This blending methodology holds great promise for the practical applications of OFETs.

Outstanding conversion efficiency of 38.39% from a Perovskite/CIGS tandem PV cell: A synergic optimization through computational modeling

An all-inorganic lead-free tandem PV cell consisting of two sub-cells CsSn0.5Ge0.5I3 (perovskite) based top cell/CIGS-based bottom cell has been designed, simulated, and optimized by varying the thickness of pertinent layers utilizing the SCAPS-1D simulator. In the top sub-cell, a wide bandgap lead-free inorganic CsSn0.5Ge0.5I3 perovskite is inserted as the primary absorber layer because of its distinctive characteristics with an ETL of ZnO, which is recognized for its high electron mobility & absorption coefficient, and an HTL of NiO to offer increased hole mobility with good chemical-durability. For the bottom sub-cell, we have selected p-type CIGS as the absorber with Spiro-OMeTAD as the apposite HTL to provide suitable offsets of valence and conduction band distribution and TiO2 as ETL to offer low-cost, low-ecotoxicity, excellent optical properties, and chemical-stability and thus offers improved efficiency of the overall tandem structure. In the beginning, the two sub-cells were simulated independently; the top sub-cell was simulated under the standard spectrum of AM1.5G, while the bottom sub-cell was optimized using a filtered spectrum. Thereafter, the current matching point of both cells was attained by optimizing the absorber layer thicknesses. Finally, our computational modeling and simulation results offer the optimized cell structure revealing an outstanding overall 38.39% power conversion efficiency (PCE), Fill Factor (FF) of 83.4%, open-circuit voltage (VOC) of 2.48 V, and short-circuit current density (Jsc) of 18.64 mA cm−2. The proposed tandem structure's performance matrices outperform those stated in the most recent literature. These outcomes of the proposed structure are expected to facilitate the development and production of a low-cost and highly effective inorganic perovskite Tandem PV cell in the future.

The enhanced properties of amplified spontaneous emission and organic light emitting diodes based on Ag NPs doped hole transfer layer

The organic semiconductor lasers (OSLs) have been seen as a promising light source for future applications. Lower amplified spontaneous emission (ASE) threshold of the organic gain medium and optimized device structures are key factors to realize electrically pumped OSLs. In this paper, the silver nanoparticles (Ag NPs) doped PEDOT: PSS buffer layer was used to improve the ASE performance of BUBD-1 molecule and the optoelectronic performance of the corresponding organic light-emitting diodes (OLEDs). Compared with the reference device with pure PEDOT: PSS buffer layer, the lowest ASE threshold was obtained in CBP: 45 wt%BUBD-1 blend film at the optimal volume ratio 1:3 of PEDOT: PSS: Ag NPs, decreased by 6 times. Then the Ag NPs doped PEDOT: PSS buffer layer was used as both buffer layer and the hole transport layer in the OLEDs devices with CBP: 45 wt% BUBD-1 blend films as the emission layer. At the optimal volume ratio of PEDOT: PSS to Ag NPs, the maximum brightness increased more than 2 times to 7823 cd/m2, and the maximum EQE increased nearly 2 times to 2.81%. The improved ASE performance of CBP: 45 wt%BUBD-1 blend films and optoelectronic properties of corresponding OLED devices can be attributed to both the localized surface plasmon resonance (LSPR) effect and the increased hole mobility caused by the addition of Ag NPs. The introduction of Ag NPs to the hole transfer layer of OLED devices may provide a potential method to realize the electrically pumped OSLs with the planar structures.

P-Type Functionalized Carbon Nanohorns and Nanotubes in Perovskite Solar Cells.

The incorporation of p-type functionalized carbon nanohorns (CNHs) in perovskite solar cells (PSCs) and their comparison with p-type functionalized single- and double-walled carbon nanotubes (SWCNTs and DWCNTs) are reported in this study for the first time. These p-type functionalized carbon nanomaterial (CNM) derivatives were successfully synthesized by [2 + 1] cycloaddition reaction with nitrenes formed from triphenylamine (TPA) and 9-phenyl carbazole (Cz)-based azides, yielding CNHs-TPA, CNHs-Cz, SWCNTs-Cz, SWCNTs-TPA, DWCNTs-TPA, and DWCNTs-Cz. These six novel CNMs were incorporated into the spiro-OMeTAD-based hole transport layer (HTL) to evaluate their impact on regular mesoporous PSCs. The photovoltaic results indicate that all p-type functionalized CNMs significantly improve the power conversion efficiency (PCE), mainly by enhancing the short-circuit current density (Jsc) and fill factor (FF). TPA-functionalized derivatives increased the PCE by 12-17% compared to the control device without CNMs, while Cz-functionalized derivatives resulted in a PCE increase of 4-8%. Devices prepared with p-type functionalized CNHs exhibited a slightly better PCE compared with those based on SWCNTs and DWCNTs derivatives. The increase in hole mobility of spiro-OMeTAD, additional p-type doping, better energy alignment with the perovskite layer, and enhanced morphology and contact interface play important roles in enhancing the performance of the device. Furthermore, the incorporation of p-type functionalized CNMs into the spiro-OMeTAD layer increased device stability by improving the hydrophobicity of the layer and enhancing the hole transport across the MAPI/spiro-OMeTAD interface. After 28 days under ambient conditions and darkness, TPA-functionalized CNMs maintained the performance of the device by over 90%, while Cz-functionalized CNMs preserved it between 75 and 85%.

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride.

Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band gap semiconductor, suffers from low hole mobility. Utilizing the ab initio Boltzmann transport formalism including spin-orbit coupling, here we show the dominating role of ionized impurity scattering in reducing the hole mobility in ScN thin films. We suggest a route to increase the hole mobility by reversing band ordering through strain engineering. Our calculation shows that the biaxial tensile strain in ScN lifts the split-off hole band above the heavy hole and light hole bands, leading to a lower hole-effective mass and increasing mobility. Along with the impurity scattering, the Fröhlich interaction also plays a vital role in the carrier scattering mechanism due to the polar nature of ScN. Increased hole mobility in ScN will lead to higher efficiencies in thermoelectric, plasmonics, and neuromorphic computing devices.