The pure SnSe is a potential material for technological applications due to its favourable electrical, optical, thermal, etc. properties. To make SnSe more suitable for varied applications needs tailoring of properties. In this work, an effort has been made to modify the properties of SnSe by doping with group III (indium) and V (antimony) elements of the periodic table. The pure SnSe, indium (In) and antimony (Sb) doped SnSe single crystals are grown by direct vapour transport technique. Two concentrations of 5% and 10% are employed for doping. The chemical compositions of the grown crystals are confirmed by X-ray energy dispersive and electron probe micro analysis techniques. The X-ray diffraction analysis substantiated the orthorhombic SnSe phase of all grown single crystals. The surface morphology study of the as-grown single crystal surfaces showed the crystal growth to have occurred by layer growth mechanism. The hot point probe technique analysis showed all crystals to be p-type semiconducting in nature. The optical absorption spectra of all as-grown samples showed sharp absorption near 846 nm wavelength. The modification of the optical bandgaps by incorporation of In3+ and Sb3+ ions within SnSe is studied. The obtained results are discussed in details.