InAs Nanowires Research Articles

One-Dimensional Quantum Dot Array Integrated with Charge Sensors in an InAs Nanowire

One-Dimensional Quantum Dot Array Integrated with Charge Sensors in an InAs Nanowire

Demonstration of VGAA-TFETs using InAs/Si Heterojunction on SOI substrate

Tunnel field-effect transistors (TFETs) are expected to be used as a next-generation low-voltage switching device. The TFETs can lower the subthreshold slope (SS) below the physical limit (SS = 60 mV/dec at room temperature) in conventional MOSFETs. Here we demonstrated InAs nanowire (NW)/Si heterojunction vertical gate-all-around (VGAA) TFETs on silicon-on-insulator (SOI) (111) substrates toward vertical integrated circuit applications. The vertical InAs NW channels were grown by selective-area growth on thin SOI(111) substrates.

Topotaxial mutual-exchange growth of magnetic Zintl Eu3In2As4 nanowires with axion insulator classification.

Due to quasi-one-dimensional confinement, nanowires possess unique electronic properties, which can promote specific device architectures. However, nanowire growth presents paramount challenges, limiting the accessible crystal structures and elemental compositions. Here we demonstrate solid-state topotactic exchange that converts wurtzite InAs nanowires into Zintl Eu3In2As4. Molecular-beam-epitaxy-based in situ evaporation of Eu and As onto InAs nanowires results in the mutual exchange of Eu from the shell and In from the core. Therefore, a single-phase Eu3In2As4 shell grows, which gradually consumes the InAs core. The mutual exchange is supported by the substructure of the As matrix, which is similar across the wurtzite InAs and Zintl Eu3In2As4 and therefore is topotactic. The Eu3In2As4 nanowires undergo an antiferromagnetic transition at a Néel temperature of ~6.5 K. Ab initio calculations confirm the antiferromagnetic ground state and classify Eu3In2As4 as a C2T axion insulator, hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange nanowire growth will, thus, enable the exploration of intricate magneto-topological states in Eu3In2As4 and potentially in other exotic compounds.

Investigation of Indium droplet assisted nucleation of InAs nanowires on graphite

Investigation of Indium droplet assisted nucleation of InAs nanowires on graphite

Assessing the interaction of alcohol homologs with InAs nanowires in contact with gas-permeable SWCNT electrode: Towards a novel sensing platform

We report the approach to designing the hybrid gas sensor based on the array of vertically-oriented InAs nanowires and gas-permeable film made of single-walled carbon nanotubes (SWCNTs). We probe the sensor performance at room temperature towards isopropyl alcohol analyte, whose highest occupied molecular orbital energy to be in-between the Fermi levels of SWCNTs and InAs, to check the main contributing mechanism. Our theoretical analysis revealed that electronic systems of both materials contribute to sensor response. Our findings indicate that the sensor response to isopropyl alcohol in a mixture with dry and humid air primarily stems from its interaction with carbon nanotubes, although it also involves an interplay between the electron energy states of SWCNTs and InAs. We also test the sensor response to methanol, ethanol, and butanol analytes and demonstrate that it enhances with a molecule weight. The proposed sensor design can be further optimized to capture vector signals under a multivariate approach to selectively determine various analytes.

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices.

New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.

The enhancement of infrared characterization of passivated InAs nanowires

Indium arsenide (InAs) nanowires (NWs) show significant advantages in optoelectronic devices due to their excellent electronic and optical properties. While the surface states affect such outstanding properties, and the performance of optoelectronic devices can be further optimized by modulating the surface state. Herein, the adsorption and substitution properties and the optoelectronics response of passivated InAs NWs are studied using first-principles calculations combined with nonequilibrium Green's function (NEGF). The results show that O atom adsorption can reduce the band gap and improve infrared absorption of InAs NWs. Meanwhile, for the O atom substitution model, the impurity energy level appears near the Fermi level of InAs NWs, and for a higher concentration O atoms substitution, the semiconduction properties of the InAs NWs are destroyed. We also choose the Au, Cs, Bi, Sn, and Y atoms as decoration atoms to passivate InAs NWs, and compared with the intrinsic InAs NW surface model, the energy bands gap of the metal-atoms adsorption models all show a decreasing trend in addition to Au-atom adsorption, and the absorption coefficients of InAs NWs adsorbed by several atoms such as Cs, Sn, Bi, and Y in the infrared region have redshifts in different degrees. The absorption coefficients of InAs NWs adsorbed by several metal atoms, Sn, Bi, and Y, are higher in the infrared region compared to that of InAs NW adsorbed by O atom. After the screening of materials, we select InAs NWs adsorbed with Cs, Bi, Sn, and Y atoms with good infrared absorption characteristics for the performance study of optoelectronic devices and it is shown that the InAs NW devices with adsorbed Bi and Sn atoms have the optimal performance with low dark current and high photocurrent.

New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD

In this paper, new growth mechanism of InAs/GaSb heterojunction nanowires grown by MOCVD has been investigated. A spear-shaped structure was firstly formed at the top of nanowires and GaAsSb quantum dots were firstly grown on the side walls of the nanowires by self-catalyzed mode. It is found that the length of InAs-GaSb nanowires in core-shell structure plays an important role in the formation of polygonal triangular pyramids and quantum dots structures. The shorter InAs nanowires become, the larger the polygonal triangular pyramid will be formed while the longer InAs nanowires become, the smaller the polygonal triangular pyramid will be formed, and quantum dots will appear on the side walls of nanowires. This new mechanism and growth technology will be conducive to the preparation of quantum dots attached to the surface of nanowires.

Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD

We studied the crystal structure of self-catalyzed InAs nanowires with different diameters grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that oxidation degree and nanowire diameter directly affect the lattice structure of InAs nanowire. In the non-oxidized state of InAs nanowires, when the diameter is greater than 160 nm, the lattice structure is mainly cubic zinc blende (ZB) structure. When the diameter is between 121 nm and 80 nm, ZB structure and hexagonal wurtzite (WZ) structure coexist. When the diameter is less than 66 nm, the lattice structure is mainly WZ structure. In the fully oxidized state of InAs nanowires, a stable layer of In2O3 is formed on its surface, and InAsO4 will be formed inside due to infiltrated oxygen atoms. When InAs nanowires are made into nanoelectronic devices as the core material, if oxidation is not prevented, InAs material with excellent electrical conductivity will also become InAsO4.

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires.

Core-only InAs nanowires (NWs) remain of continuing interest for application in modern optical and electrical devices. In this paper, we utilize the II-VI semiconductor CdSe as a shell for III-V InAs NWs to protect the electron transport channel in the InAs core from surface effects. This unique material configuration offers both a small lattice mismatch between InAs and CdSe and a pronounced electronic confinement in the core with type-I band alignment at the interface between both materials. Under optimized growth conditions, a smooth interface between the core and shell is obtained. Atom probe tomography (APT) measurements confirm substantial diffusion of In into the shell, forming a remote n-type doping of CdSe. Moreover, field-effect transistors (FETs) are fabricated, and the electron transport characteristics in these devices is investigated. Finally, band structure simulations are performed and confirm the presence of an electron transport channel in the InAs core that, at higher gate voltages, extends into the CdSe shell region. These results provide a promising basis toward the application of hybrid III-V/II-VI core/shell nanowires in modern electronics.

Mid-infrared detectors for space electronics based on InAs-core/InP-shell nanowires

The Mid-Infrared (MIR) spectral range is most important for free-space communications and astronomy. It contains radiation emitted by astrophysical objects during evolution of the planets, stars, galaxies and in particular by prebiosignature molecules on exoplanets. Nanowires (NWs) are expected to improve various optoelectronic devices, including IR photodetector technology. The bandgap of the catalystless InAs NWs can be tuned by introducing mechanical strain due to lattice mismatches in the core/shell NWs structures. Passivation with wider bandgap InP shell provide highly tunable functionality for future electronic devices. Temperature dependence of photoluminescence (PL) spectra of NWs InAs and InAs-core/InP-shell was acquired using Fourier-spectrometer. The position of the high-energy PL peak between calculated values of Eg for wurtzite and sphalerite structures confirms the formation of NWs into a combined polytype. Low energy PL peak is connected with parasitic bulk islands. Surface passivation successfully eliminates surface states and provides nontrivial temperature dependence of high-energy PL peak due to tensile and compressive strain in InAs core. Thus, detectors based on NWs InAs and InAs-core/InP-shell structures can operate in the MIR range of the spectrum with a wavelength from 2 to 5 μm.

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition.

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III–V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the 〈110〉, 〈100〉 and 〈112〉 orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III–V substrates. The InAs nanowires and nanowire networks are zinc-blende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.

High-density and high-uniformity InAs quantum nanowires on Si(111) substrates

InAs nanowires (NWs) were grown on SiOx pinholes formed on Si(111) substrates by molecular beam epitaxy. Influences of electron-beam (EB) irradiation on the SiOx layer on the pinhole formation and the subsequent InAs NW growth were studied. As the EB irradiation dose increased, the pinhole density in the SiOx layer decreased. From atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy results, it was found that the pinhole etching of the SiOx layer by Ga droplets was suppressed by carbon adsorption due to the EB irradiation. By forming high-density pinholes on the SiOx layer without the EB irradiation, high-density InAs NWs with 1–2 × 1010 cm−2 were grown successfully, and the uniformity in the NW diameter improved. The standard deviation of the NW diameter was 1.8 nm (8.8%) for high-density NWs. In addition, the NW diameter decreased with decreasing EB dose, and the NW diameter was controlled by adjusting the diameter of Ga droplets forming the pinholes. As the NW diameter decreased, photoluminescence spectra of the NWs shifted to higher energies than the bandgap energy of the wurtzite InAs bulk. From these results, we successfully fabricated high-density and high-uniformity InAs NWs with quantum size effects on EB-unirradiated SiOx/Si(111).

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 109 cm−2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm−2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates.

Dynamical Polarization of the Fermion Parity in a Nanowire Josephson Junction.

Josephson junctions in InAs nanowires proximitized with an Al shell can host gate-tunable Andreev bound states. Depending on the bound state occupation, the fermion parity of the junction can be even or odd. Coherent control of Andreev bound states has recently been achieved within each parity sector, but it is impeded by incoherent parity switches due to excess quasiparticles in the superconducting environment. Here, we show that we can polarize the fermion parity dynamically using microwave pulses by embedding the junction in a superconducting LC resonator. We demonstrate polarization up to 94%±1% (89%±1%) for the even (odd) parity as verified by single shot parity readout. Finally, we apply this scheme to probe the flux-dependent transition spectrum of the even or odd parity sector selectively, without any postprocessing or heralding.

Electrical Activity and Extremes of Individual Suspended ZnO Nanowires for 3D Nanoelectronic Applications.

We explored the electrical activity and extremes inside individual suspended zinc oxide (ZnO) nanowires (NWs) (diameter: 50-550 nm, length: 5-50 μm) subjected to high forward bias-induced Joule heating using two-terminal current-voltage measurements. NWs were isolated using a reproducible nanometrology technique, employing a nanomanipulator inside a scanning electron microscope. Schottky behavior is observed between installed tips and ZnO NW. The suspended ZnO NWs exhibited an average electrical resistivity ρ (approximately 2.3 × 10-2 Ω cm) and a high electron density n (exceeding 1.89 × 1018 cm-3), comparable to that of InP NWs, GaN NWs, and InAs NWs (1018∼1019 cm-3), suggesting the potential to drive advancements in high-performance NW devices. A maximum breakdown current density (JBD) of ∼0.14 MA/cm2 and a maximum breakdown power density (PBD) of 6.93 mW/μm3 were obtained, both of which are higher than substrate-bound ZnO NWs and consistent with previously reported results obtained from probed ZnO NWs grown vertically on the substrate. Moreover, we discovered that NWs experienced thermal breakdown due to Joule heating and exploited this breakdown mechanism to further investigate the temperature distribution along the ZnO NWs, as well as its dependence on the electrical properties and thermal conductance of contact electrodes. Thermal conductance was determined to be ∼0.4 nW K-1 and ∼1.66 pW K-1 at the tungsten(W)-ZnO NW and platinum(Pt)-ZnO NW contacts, respectively. In addition, we measured the elastic modulus (130-171 GPa), which closely approximated bulk values. We also estimated the nanoindentation hardness to be between 5 and 10 GPa. This work provides valuable insights into the electrical activity and extreme mechanisms, thus providing a better understanding of the potentials and limitations associated with utilizing suspended NWs in 3D nanodevices.

Lower-temperature fabrication of airbridges by grayscale lithography to increase yield of nanowire transmons in circuit QED quantum processors

Quantum hardware based on circuit quantum electrodynamics makes extensive use of airbridges to suppress unwanted modes of wave propagation in coplanar-waveguide transmission lines. Airbridges also provide an interconnect enabling transmission lines to cross. Traditional airbridge fabrication produces a curved profile by reflowing resist at elevated temperature prior to metallization. The elevated temperature can affect the coupling energy and even yield of pre-fabricated Josephson elements of superconducting qubits, tunable couplers, and resonators. We employ grayscale lithography to enable reflow and thereby reduce the peak temperature of our airbridge fabrication process from 200 to 150 °C and link this change to a substantial increase in the physical yield of transmon qubits with Josephson elements realized using Al-contacted InAs nanowires.

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires.

Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. Here, we present an extensive study of Sn growth on InSb, InAsSb, and InAs nanowires and demonstrate how the crystal structure of the nanowires drives the formation of either semimetallic α-Sn or superconducting β-Sn. For InAs nanowires, we observe phase-pure superconducting β-Sn shells. However, for InSb and InAsSb nanowires, an initial epitaxial α-Sn phase evolves into a polycrystalline shell of coexisting α and β phases, where the β/α volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the β-Sn content. Therefore, this work provides key insights into Sn phases on a variety of semiconductors with consequences for the yield of superconducting hybrids suitable for generating topological systems.