Magnetic tunnel junctions (MTJs) constructed from atomically thin two-dimensional (2D) magnetic materials have attracted great attention in recent years because it meets the requirements of miniaturization and high tunability of next-generation spintronic devices. In this work, we demonstrate that the ferromagnetic semiconductor VS2 is transformed into a half-metal in VS2/MoSSe vdW heterostructure. Based on the heterostructure, we design an in-plane MTJs that comprise a monolayer VS2 barrier sandwiched between two VS2/MoSSe heterostructure electrodes. Through density functional calculations combined with a nonequilibrium Green’s function technique, it is found that the tunnel magnetoresistance (TMR) ratio as high as 4.35 × 109% can be achieved. Moreover, the TMR ratio can be tuned by the barrier length, and the maximum value exceeds 1015%. These results not only provide a novel route for designing MTJs using 2D ferromagnetic semiconductor material, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.
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