In-phase Signal Components Research Articles

The Rician Complex Envelope Under Line of Sight Shadowing

This letter investigates a Rician complex envelope which is subject to line-of-sight (LOS) shadowing. In particular, exact closed-form expressions are obtained for the joint envelope-phase distribution, the distribution of the phase, and that of the quadrature and in-phase signal components. Using the new formulation for the phase distribution, we find that for increasing shadowing severity, the phase becomes progressively more disperse. Interestingly, the phase is shown to be unimodal. This illustrates that the relationship which is known to exist between the envelope of Rician fading which undergoes LOS shadowing and Hoyt fading does not extend to the phase. We also provide two applications of our new results which investigate the average bit error probability and the average symbol error probability for phase-based modulation schemes operating in LOS shadowed fading channels. The results are shown to provide excellent agreement with Monte Carlo simulations.

Nondestructive analysis of ultrashallow junctions using thermal wave technology

It is shown that the thermal wave (TW) nondestructive technology widely used in semiconductor industry for ion-implant monitoring can also be used for characterization of ultrashallow junctions created as a result of thermal annealing of ion implanted wafers. A set of Si wafers implanted with boron at energies 0.2–0.5 keV and implantation doses in the range of 1014–1015 cm−2 thermally annealed at different temperatures (950–1100 °C) has been studied. For all samples, the TW signal is found to vary linearly with junction depth and is shown to exhibit a very good correlation with secondary ion mass spectrometry data. A special processing of experimental data using both the TW quadrature and in-phase signal components allowing for resolution of effects introduced by different implantation doses, energies, and annealing temperatures is discussed.