Improvement Of Output Characteristics Research Articles

부하변동에 따른 HESS 하프 브리지 컨버터의 출력특성 개선에 관한 연구

부하변동에 따른 HESS 하프 브리지 컨버터의 출력특성 개선에 관한 연구

Improvement in Output Characteristics Using a Resonator and Passive Rectifiers in Vibration Generators

Energy harvesting has attracted increased attention recently. Energy sources are present all around us, such as, mechanical vibrations, stress, strain, waste heat, sunlight or room light, electromagnetic rays, and chemical or biological sources. Vibration generators based on piezoelectric elements have been highlighted as low-power sources; however, their output power is very low, around the milliwatt or microwatt level, and thus, improving their performance is necessary to make the generated power usable. This paper investigates the use of passive devices to improve output characteristics of the vibration generators. The proposed circuits are a resonator and a passive rectifier. The proposed resonator consists of a parallel inductor and capacitor for $LC$ resonance. The $LC$ resonance equivalently reduces the internal capacitor of the piezoelectric elements. As a result, the output voltage and power are increased compared with that of conventional circuits. In addition, a boost-type current-improving passive rectifier is applied as the passive rectifier. The validity of the proposed circuit is numerically and experimentally verified.

The improvement of output characteristics on Tm3+-doped all-fibre laser operating at 1908 nm

We demonstrate a comparative analysis of directly diode-pumped Tm3+-doped all-fibre laser operating at 1908 nm with different structure at fibre end facets. The feedback arising from parasitic oscillations and amplified spontaneous emission can be suppressed by coating an anti-reflection on the forward end facet and cleaving an angle on the backward end facet. 44.1 W laser power on forward end at the pumped power of 120 W was achieved. The forward laser slope efficiency was 39.3%, corresponding to the backward laser slope efficiency of 3.0%. The beam quality factor of M2 was 1.4.

組込みデバイスを用いた抵抗線温度計の出力特性の改善

組込みデバイスを用いた抵抗線温度計の出力特性の改善

The Improvement of Output Characteristics in Tensile Strained-Si-on-Insulator NMOSFET by Channel Band Gap Adjustment

An asymmetric device, Si/tensile strained-Si heterojunction channel NMOSFET with a Si channel close to the source and a tensile strained-Si channel close to the drain, is fabricated by tilt angle Ge implantation on the source side of the tensile strained Si-on-insulator (SSOI) and followed by solid-phase recrystallization. This asymmetric device has different electron affinities and threshold voltages along the channel. It causes the redistribution of inversion carriers and lateral electric fields when the asymmetric device is turned on. Improved kink effect and channel length modulation are observed. In addition, the enhanced transconductance is also shown in the asymmetric device. This novel asymmetric device can improve the output characteristics of the NMOSFET fabricated by the SSOI substrate.

502 案内羽根を用いたサボニウス水車の効率改善(OS6-1 水車および流体エネルギーの有効利用,オーガナイズドセッション:6 自然と生物の流れ現象とその有効利用)

502 案内羽根を用いたサボニウス水車の効率改善(OS6-1 水車および流体エネルギーの有効利用,オーガナイズドセッション:6 自然と生物の流れ現象とその有効利用)

306 Off-axis反射鏡を利用した不安定共振器の出力特性の改善(OS8-1 微細振動,オーガナイズドセッション:8 機械と車両のダイナミクスおよび諸問題)

306 Off-axis反射鏡を利用した不安定共振器の出力特性の改善(OS8-1 微細振動,オーガナイズドセッション:8 機械と車両のダイナミクスおよび諸問題)

Nanostructured Materials and Mechanisms for Electrochemical Conversion and Storage

With recent advances in the development of modern electronic devices, reliable energy and power sources are required to meet technological needs. Electrochemical energy conversion has certain advantages since it can cover a broad window of energy and power densities. Emphasis is given in this work to nanostructured materials that have currently attracted interest for energy storage and conversion devices. Nano-ionic bulk and interfacial aspects are taken into consideration. Moreover, modeling of electrochemical storage is utilized to translate information for the physicochemical processes and rate-determining steps involved and reveal proper choice of materials, cell design and improvement of output characteristics. Specific examples are shown for supercapacitors where experimental data are compared to simulation results. The frequency dependence of hybrid electrochemical systems is discussed and related to their transient characteristics.

1004 Off-axis不安定共振器の出力特性の改善(GS2 流体力学,一般セッション)

1004 Off-axis不安定共振器の出力特性の改善(GS2 流体力学,一般セッション)

A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx, shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.

A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx. shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx, shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.