Imaginary Part Of Electric Modulus Research Articles

Valence band spectra and doping based alterations in band gap and electric modulus of Nd2NiMnO6

Here in this paper, extending our earlier study, we have investigated the electrical properties of Sr doped Nd2NiMnO6 through the study of electric modulus. Nd2NiMnO6 has been doped with Sr by replacing Nd and the doping has not induced any new phase as all the samples of Nd2-xSrxNiMnO6 (x = 0.0, 0.1, 0.3) show monoclinic phase. Valence band spectra have been determined through x-ray photoemission spectroscopy and the absence of spectral density at Fermi energy EF for all the three samples indicates the insulating behavior with the sample having doping concentration x = 0.1 being the highly insulating of all the samples. Modulus study has been carried out in order to investigate more about the electrical properties by studying the dependence of real and imaginary part of modulus on frequency and temperature. The variation of real and imaginary part of electric modulus with the concentration of dopant has also been observed. The modulus study reveals the relaxation phenomenon in all the three samples. Further, we have determined the band gap of three samples through UV-Visible spectroscopy and the variation in the value of band gap with changing concentration of dopant Sr is in accordance with the conductivity plots already discussed in our earlier studies.

Structural characterization and dielectric properties of ternary polyaniline/berlin blue/ruthenium dioxide nanocomposite

ABSTRACT A ternary nanocomposite composed of polyaniline/berlin blue/ruthenium dioxide, i.e. PANI/BB/RuO2 was synthesized through a one-pot process using ammonium persulfate as a strong oxidizing agent in H2SO4 medium. The structure, morphology, thermal and optical properties of unary PANI, BB, RuO2, and ternary PANI/BB/RuO2 nanomaterials were analyzed through FTIR, XRD, FESEM, TGA, and UV-Vis techniques. The FTIR and XRD studies confirmed the formation of ternary nanocomposite. FESEM analysis revealed the homogenous structure with uniform distribution of PANI, BB, and RuO2 nanoparticles in the ternary nanocomposite. From UV-Vis studies, a low optical band gap value was obtained for PANI/BB/RuO2 nanocomposite in comparison to PANI nanoparticles. Further, the dielectric behavior of the unary and ternary nanomaterials was analyzed through various parameters such as dielectric constant, dielectric loss, real and imaginary parts of electric modulus in the frequency range of 10 Hz−1 MHz by varying the temperature. It was found that ternary PANI/BB/RuO2 nanocomposite exhibits high dielectric constant and electric modulus (150°C) compared to unary nanoparticles. Hence, PANI/BB/RuO2 can serve as a suitable dielectric material for energy storage devices such as in solid-state capacitors.

Enhanced dielectric properties of zinc doped bentonite composites: an effect of cobalt doping concentrations and tight binding calculation

In this study we have successfully synthesized undoped and Zn and Co incorporated bentonite samples. The amount of Zn was kept constant while as Co amount was varied. All the synthesized samples were characterized using x-ray diffraction analysis which confirms the predominant presence of montmorillonite in all the samples thus confirming successful formation of bentonite. Similarly, EDX analysis confirms successful incorporation of Zn and Co in Ben sample. The analysis of the dielectric properties of the produced samples was successfully carried out, and the frequency dependence of the dielectric constant and dielectric loss was explored. According to the results, all the samples exhibit considerable dielectric dispersion at lower frequencies, whereas steady dielectric constant and modest dielectric loss are shown at higher frequencies. The effect of Zn, Co incorporation and temperature dependence of dielectric behaviour of all the samples was also analysed and it was observed that at low temperatures undoped Ben samples showed high dielectric constant while as at higher temperatures the incorporation of Zn and Co enhances the dielectric constant of as prepared sample. Similarly, the variation of conductivity of as prepared samples with frequency and temperature was analysed and it was observed that all the samples show similar conduction behaviour and follows correlated barrier hopping type of conduction. The real and imaginary part of electric modulus as a function of frequency was also analysed. Further, theoretical analysis showed considerable change in HUMO and LUMO which is considered as a main reason responsible for change in dielectric characteristics of Ben and Zn/Co incorporated samples. From this study it was observed that the incorporation of metal ions into the layered bentonite improved the dielectric properties at high temperature thus this study provides a new insight into the development of new dielectric materials which could be used under high temperature operation conditions.

Dielectric Relaxation Behavior and Electrical Conduction Mechanism of PVA/ZnO Nanocomposites for Flexible Electronic Device Application

Transport properties of polyvinyl alcohol/ZnO nanocomposites (PVA/ZnO) of varying ZnO nanofiller are studied focussing on their potential application in electronic device application. The structural, morphological, and elemental composition studies of the prepared samples are done by X‐ray diffraction (XRD), scanning electron microscope (SEM), and energy‐dispersive X‐ray analysis (EDX). XRD confirms the formation of nanocomposites. SEM image shows the dispersion of ZnO nanoparticles on the surface of PVA matrix. EDX verifies that no external impurities are present in the nanocomposite samples. Frequency‐ and temperature‐dependent dielectric measurement of the samples reveals maximum dielectric constant at PVA/15 wt% ZnO nanocomposite. Dielectric loss results show a lossless behavior at higher frequencies (<0.2), indicating their suitability for high‐frequency applications. The AC conductivity studies reveal that electrical conduction mechanism in the nanocomposites is governed by the correlated barrier hopping mechanism. Activation energy of the samples reveals the presence of two thermally activated transport mechanism above and below 353 K. The imaginary part of electric modulus with frequency shows a single relaxation peak indicating the transition from long‐range to short‐range mobility with increasing frequency and temperature above 353 K. The contribution of grain and grain boundary in the electrical conduction process is confirmed from the Nyquist plot.

Structural, Frequency and Temperature Dependent Dielectric Properties of Zn2+ Substituted Ni-Co Based Spinel Ferrite (ZnxNi0.8−xCo0.2Fe2O4)

Zinc substituted nickel-cobalt ferrites, i.e., ZnxNi0.8−xCo0.2Fe2O4 (x = 0.0, 0.05, 0.10 and 0.20) with average crystallite size 100 nm were synthesized by citrate-gel auto-combustion method to investigate effects of Zn2+ substitution on the structural and dielectric properties. Both X-ray diffraction (XRD) and IR spectroscopy studies confirms the formation of pure cubic spinel structure. Variation of lattice parameter infers Vegard’s law linear dependence with the addition of Zn2+ concentration. The temperature-dependent behavior of dielectric and modulus spectra has been studied within the frequency range 100 Hz-100 kHz for different temperatures between 100 K and 400 K. It was concluded that the dielectric responses of ZnxNi0.8−xCo0.2Fe2O4 are found to be frequency dependent and thermally activated. Also, In the Zn doped ferrites variations of dielectric loss (tan δ) and the imaginary part of electric modulus (M") show the presence of the non-Debye type of dielectric relaxation. Rise in Zinc concentration leads to a decrease in dielectric constant (ε r) due to the declining of Fe3+–O–M2+ conducting network (M is Co or Ni). Here, we report a low loss tangent factor of the order of for the sample Ni0.6Zn0.2Co0.2Fe2O4 make this composition suitable for high frequency-applications at room temperature. The activation energy is calculated from electric modulus formalism and DC electrical conductivity and found to increase with further substitution of Zn2+ concentration.

Copper alumina reinforced poly(aniline-co-indole) nanocomposites for optoelectronic devices

ABSTRACT Copper alumina (Cu-Al2O3) reinforced poly(aniline-co-indole) (PANI-co-PIN) nanocomposites were prepared and characterised by UV-vis spectroscopy, FE-SEM and DSC. The bandgap energy decreased with the addition of Cu-Al2O3 to PANI-co-PIN. The FE-SEM confirms the uniform dispersion of nanoparticles in the copolymer. The DSC showed a shift in glass transition temperatures to higher regions with Cu-Al2O3 concentrations. The frequency-temperature-dependent dielectric parameters and electrical conductivity of nanocomposites were investigated. Activation energy calculated from Arrhenius equation decreases with increasing frequency. The real and imaginary part of electric modulus implies the thermally activated dielectric relaxations. The decreasing radius of semicircles in Nyquist plot with increasing temperatures indicates the existence of thermally activated conduction mechanisms. Different theoretical models were used to predict the DC conductivity mechanism in copolymer nanocomposites.

Design of proton conducting solid biopolymer blend electrolytes based on chitosan‐potato starch biopolymers: Deep approaches to structural and ion relaxation dynamics of H+ ion

AbstractThe need for flexible energy storage devices for advanced technologies has encouraged researchers to focus on environmental‐friendly biopolymers. In this work, chitosan (CS) and potato starch (PS) biopolymers are blended to prepare proton conducting solid electrolytes. Based on the X‐ray diffraction (XRD) inspection, the most amorphous blended film with the lowest crystallinity degree was selected to prepare polymer electrolytes. The variation in Fourier‐transform infrared spectroscopy (FTIR) bands were used to investigate the occurrence of interactions among the ammonium thiocyanate (NH4SCN) salt and CS:PS polymer blends. The experimental results of electrochemical impedance spectroscopy (EIS) were simulated with electrical equivalent circuit (EEC) modeling to determine the circuit elements. The highest value of S cm−1 was recorded for the sample included 40 wt.% of dopant salt. The dielectric analyses were helpful in separating the regions ascribed to electrode and molecular polarizations. The combination of circuit elements achieved from the EEC modeling and Koops phenomenological interpretation is used to understand the behavior of the loss tangent (tanδ) pattern. The AC conductivity pattern followed Jonscher's power law. The relaxation dynamics interrelated with ions is explained using electric modulus approaches. The peaks hidden in the dielectric loss () spectra, were manifested in the imaginary part of electric modulus () pattern. The ‐ patterns were used to shed light on the coupling between ionic motion and polymer chain dynamics.

Estimation of Moisture Content in XLPE Cable Insulation Using Electric Modulus

In this article, a novel approach is proposed for accurate moisture content (MC) estimation of cross-linked polyethylene (XLPE) insulation employing electric modulus. Additionally, the variation of real and imaginary part of electric modulus in the argand plane is fitted using Cole-Cole (C-C) model for understanding of distributed relaxation behavior of XLPE insulation. Based on the frequency variation of dielectric parameters, five moisture sensitive parameters are identified and using these parameters, five empirical relationships are proposed for quantitative assessment of MC in XLPE insulation. It is observed that parameters obtained from the complex modulus spectrum yields better accuracy in estimation of MC compared to the parameters obtained from traditional frequency domain spectroscopy (FDS).

Structural, Morphological, Dielectric, and Magnetic Properties of Pb1-xCrxFe12O19 M-type Hexaferrites

Chromium substituted M-type hexagonal ferrites with nominal composition Pb1-xCrxFe12O19 where x= (0.0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared via sol gel route. Structure of the single phase lead hexaferrite was estimated from X-ray diffraction (XRD) analysis. Scanning electron microscopy (SEM) confirmed the formation of hexagonal platelets with an average grain size in the range of 53–63 nm. Crystallite size, lattice parameters and cell volume was found to decrease with the increase of Chromium concentration. Magneto crystalline anisotropy and saturation magnetization has been explored through the law of approach to the saturation magnetization. Saturation magnetization first increased and then found to be maximum (64 emu/g) at 30% of Cr3+ doped lead hexaferrite and minimum coercivity (6.54 KOe) was perceived for this composition. Dielectric constant, dielectric loss, tangent loss, real and imaginary part of electric modulus, ac conductivity and Q-values of the prepared samples were also explained. With the increase of dopant (Cr3+) concentration, dielectric constant was increased gradually. These characteristics are suitable for various applications such as phase shifter, modulators, stealth technologies and also in Multilayer chip inductor.

Impedance and Dielectric Properties of PVC:NH4I Solid Polymer Electrolytes (SPEs): Steps toward the Fabrication of SPEs with High Resistivity.

In the present article, a simple technique is provided for the fabrication of a polymer electrolyte system composed of polyvinyl chloride (PVC) and doped with varying content of ammonium iodide (NH4I) salt using solution-casting methodology. The influences of NH4I on the structural, electrochemical, and electrical properties of PVC have been investigated using X-ray diffraction, electrochemical impedance spectroscopy (EIS), and dielectric properties. The X-ray study reveals the amorphous nature of the polymer–salt complex. The EIS measurement revealed an ionic conductivity of 5.57 × 10−10 S/cm for the electrolyte containing 10 wt.% of salt. Our hypothesis is provided, which demonstrated the likelihood of designing highly resistive solid electrolytes using the concept of a polymer electrolyte. Here, the results showed that the resistivity of the studied samples is not dramatically decreased with increasing NH4I. Bode plots distinguish the decrease in resistance or impedance with increasing salt contents. Dielectric measurements revealed a decrease in the dielectric constant with the increase of NH4I content in the PVC polymer. The relaxation time and dielectric properties of the electrolytes confirmed their non-Debye type behavior. This pattern has been validated by the existence of an incomplete semicircle in the Argand plot. Insulation materials with low εr have found widespread applications in electronic devices due to the reduction in delay, power dissipation, and crosstalk. In addition, an investigation of real and imaginary parts of electric modulus leads to the minimized electrode polarization being reached.

Study of dielectric permittivity and electrical modulus of K2CrO4 doped PMMA

To understand the variations that occurs in electrical parameters on doping potassium chromate (K2CrO4) in Poly- Methyl-methacrylate (PMMA), the authors have developed composite films by doping 1 %, 2 %, 5 % and 10 % K2CrO4 in PMMA by solution cast technique at room temperature. These samples were analysed for structural properties using XRD and FTIR. The dielectric parameters like real part and imaginary part of dielectric constant (ε′ and ε′′), ac conductivity (σ) and real part and imaginary part of electric modulus (M'andM'') prepared of specimen have been evaluated from the electrical parameters obtained using Impedance analyzer WANN KERR. Both real and imaginary component of the dielectric permittivity decrease with increase in the frequency in the range 102 Hz to 105 Hz and increase on increasing the concentration of K2CrO4. AC conductivity shows an increase with increase in frequency and concentration of K2CrO4. M'andM'' the segmental movement of the polymer chain dominating the dielectric properties.

Investigation of Dielectric Properties of Ni/n-TiO2/p-Si/Al Heterojunction in Wide Range of Temperature and Voltage

In the present study we have investigated the dielectric properties such as dielectric constant (ε'), dielectric loss (ε"), real part of electrical modulus (M'), imaginary part of electric modulus (M") and AC electrical conductivity, (σac) in wide range of applied voltage, temperature and frequency for Ni/n-TiO2/p-Si/Al heterojunction. A nanocrystalline TiO2 layer was grown on p-type boron doped silicon in oxygen-controlled environment using optimized KrF excimer laser. Ohmic contact of pure nickel and aluminum metals was made on TiO2 and silicon respectively, with thermal coating system. The characteristics obtained with the help of conductance-voltage and capacitance-voltage measurements also known as impedance/admittance spectroscopy. The studied parameters are found to be very sensitive to frequency, temperature and voltage. The restructuring and reordering of interface state density due to temperature variations and interfacial polarizations due to frequency variations collectively result the observed changes in the and . With an increase in frequency AC conductivity and electrical modulus also increases. The relaxation mechanism can be observed in the complex electrical modulus analysis. The thermally activated conduction process was indicated by the frequency dependent AC conductivity at different temperatures. Using power law, the AC conductivity was analyzed and found to increase with temperature, applied voltage.

Polyaniline–calcium titanate perovskite hybrid composites: Structural, morphological, dielectric and electric modulus analysis

This paper reports hybrid composites based on polyaniline (PANI) and calcium titanate (CaTiO3) perovskite as a nanofiller synthesized by in-situ polymerization technique. Their structure and morphology were investigated by X-ray diffraction analysis and scanning electron microscopy. The XRD analysis shows that the addition of CaTiO3 in polyaniline reduced the amorphous structure of polyaniline transforming it into semi-crystalline nature, which agrees well with the higher conductivity. Scanning electron microscopy of composites showed a more compact and homogenous structure with uniform distribution of CaTiO3 in the polymer matrix. Dielectric parameters such as dielectric constant, loss factor, and dielectric loss, real and imaginary parts of electric modulus were measured and evaluated as a function of frequency and temperature as well. The variation of dielectric properties and ac conductivity reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization. The observed ac conductivity behavior of polyaniline in the presence of calcium titanate was discussed in the framework of Jonscher’s power law. The result showed that ac conductivity increases with the rise of the frequency of applied field and temperature analogous to the semiconducting behavior of composites. Temperature-dependent behavior of frequency exponent seems to obey correlated barrier hopping conduction mechanism. The relaxation behavior of the synthesized samples was analyzed by the electric field modulus and was found to decrease with temperature and CaTiO3 content and increase with frequency.

Charge carrier relaxation in YSZ and CaSZ single crystals: In search of the analytic representation of DRT

The Python applications using the least-square solver for a non-negative solution and Tikhonov regularization were applied for finding the distribution function of relaxation (DRT) times. The impedance data which represent the process of charge carrier relaxation in the bulk of 10 mol%Y2O3–90 mol%ZrO2 and 15 mol%CaO– 85 mol%ZrO2 single crystals herewith the minor influence of the interfacial polarization was separated from experimental data sets and distribution function of relaxation times (eDRT) were found. The obtained eDRT was used to fit parameters of skewed normal, Weibull, and Johnson SU continuous probability density functions (PDFs). The experimental datasets were also used to fit parameters of two equivalent circuits, which allowed to derive the distribution function of relaxation times (cDRT) from noiseless data. Noteworthy that obtained cDRT showed a significant difference from eDRT. The spectra of various electrical properties were reconstructed from both kinds of DRTs as well as from PDFs and were compared. The Johnson SU function stood out by describing the electrical response of charge carrier relaxation very well. It reproduced not only the impedance spectra but also all peculiarities of spectra of various electrical parameters: the dependence of AC conductivity close to the power-law, a linear relationship between the real and the imaginary parts of electric modulus in the high-frequency range, and the bend of dielectric permittivity in the middle frequencies.

Temperature dependent electrical transport behavior of (100-x)Bi2O3-x(BaTiO3) glass system

Impedance measurements were performed as a function of temperature (RT to 700 K) in the frequency range (1 Hz-1MHz) on fabricated Bismuth Barium Titanate glass samples. Dielectric permittivity is found to be increased on increasing both the temperature and BaTiO3 (BT) content in highly polarizable glass matrix of Bi2O3. Experimental data obtained for imaginary part of electric modulus (M″)has been fitted theoretically using non-exponential Kohlrausch-Williams-Watts (KWW) function, however Jonscher's universal power law has been employed to analyze the frequency dependent ac conductivity. The calculated activation energy values for both the samples have been found to be in close agreement with each other and qualify for doubly ionized oxygen vacancies, proposing that the similar kind of charge carriers are involved in the relaxation and conduction mechanisms. Stretched exponent (β) of Modulus and power exponent (n) of ac conductivity, estimated from theoretical fitting of experimental data, have been found to be dependent on temperature and BT (BaTiO3) content. On increasing temperature, an increase in values of (n) suggests that non-overlapping small polaron tunneling (NSPT) model can be easily applied to explain ac conduction and hopping transport mechanisms of the fabricated glass samples.

Influence of activation energy on charge conduction mechanism and giant dielectric relaxation of sol-gel derived C3H7NH3PbBr3 perovskite; Act as high performing UV photodetector

This work contains an extensive study on temperature dependent complex dielectric behavior over 4 Hz≤ f≤ 8 MHz of a promising hybrid perovskite, propylammonium lead bromide. The structural, as well as morphological property of this sol-gel derived sample have been analyzed with the help of XRD and SEM respectively. The obtained energy band gap and thermal stability study ensure the capability of this material in device fabrication. Possessing a wide band gap, this perovskite fascinatingly serves as a UV photodetector. The individual impact of grain and grain boundary over the entire resistance has been resolved by Maxwell – Wagner Cole–Cole model. This material holds an amazing property; giant dielectric constant near room temperature at low frequency limit which escalates rapidly in the influence of thermal effect. Modified cole – cole plot assures that both space and free charge conductivities ascend with temperature. The asymmetrical nature of the imaginary part of electric modulus is analyzed by Kohlrausch – Williams – Watts which confirms its non – Debye nature diminishes with rising temperature. The thermally triggered AC conductivity follows Jonscher’s power law and is emphasized with the jump relaxation model. The bulk conductivity of the sample depends on temperature and is elucidated with variable range hopping of localized charge carriers. Activation energy plays a key role in the ionic conduction mechanism within the sample, described elaborately. The overall substantial studies on its application as UV detector and different dielectric properties of this sample construct the basis of appreciable acceptability of the sample in energy harvesting.

Tailoring of dielectric and transport properties of C3H7NH3PbIxBr3-x

Hybrid perovskites have drawn immense attention among researchers due to its attracting applications in solar energy harvesting. C3H7NH3PbIxBr3-x(0≤x≤3), promising hybrid alkylammonium perovskites with tunable band gap and better stability, need to be explored. A comparative study of various electrical properties of sol–gel derived C3H7NH3PbIxBr3-x(x=0.0,3.0) are carried out over the frequency range 4Hz≤f≤8MHz in the temperature range 300K≤T≤373K. Dielectric constant of C3H7NH3PbIxBr3-x is enhanced appreciably over the temperature range of investigation for complete substitution of I by Br. Deviation of non-Debye type responses from ideal Debye type behaviour of imaginary part of electric modulus is revealed from Kohlrausch-Williams-Watts analysis. AC conductivity is found to be raised considerably in C3H7NH3PbBr3 and conductivity of both samples may be explained with correlated barrier hoppingmechanism. The higher value of activation energy in C3H7NH3PbBr3 plays an important role in charge transport.

Investigation of structural and impedance spectroscopic properties of borate glasses with high Li+ concentration

Lithium borate glasses prepared by melt-quench technique have been studied with a view to ascertain their structural and electrical properties. FTIR analysis of the present samples reveals the absence of boroxol rings, presence of structural units of lithium formed with oxygen and increase in the number of Non-Bridging Oxygens (NBOs) in the glass system. The real and imaginary parts of dielectric constant increase with frequency and temperature arises due to interfacial ionic polarization. The non-exponential Kohlrausch-Williams-Watts (KWW) function has been found to follow by the imaginary part of electric modulus, thereby confirming its applicability. The fitting of data of ac conductivity as per Jonscher's universal power law indicates hoppable ion concentration dependent upon temperature and Li2O content. The analysis is further supported by the variations of ac-conductivity as well as the activation energy for dc conductivity. A decrease in impedance and increase in the space charge polarization is observed with increasing Li2O concentration. Further, the electrical behavior of samples has been investigated via an impedance equivalent circuit corresponding to the Nyquist plot.

Origin of ferroelectricity in multiferroic ErFeO3

ErFeO3 is a centrosymmetric Pnma/Pbnm structure with no ferroelectricity. However, most surprisingly, it shows ferroelectricity and antiferromagnetism at room temperature. Here, the Fe3+-O-Fe3+ bond angles are 143.50 and 159.280 which is deviated from 1800. This Fe3+-O-Fe3+ super-exchange interaction contributes to an AFM ordering with a weak FM component. An antisymmetric DM exchange interaction (Di. Si x Sj) is attributed to the weak FM component between adjacent spins and introduced spin-orbit interaction. As a result an electric polarization P ~ eij x (Si x Sj) is produced due to local crystal anisotropy. To acquire a conception involving the contribution of grain and grain boundary of ErFeO3, we have analyzed complex impedance and modulus spectra and fitted with the equivalent circuit diagram. The imaginary part of electric modulus is fitted by KWW function and the stretched exponent is found to be 0.3<β< 0.48. The conduction mechanism of ErFeO3 is followed CBH model.

Interpretation of the I–V, C–V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature

The Zinc Sulphide (ZnS) thin film, which is included in the Au/n-GaAs/In diode as the interface layer, was grown on the n-GaAs semiconductor substrate by the spray pyrolysis method. First, to reveal some structural, surface and optical properties of the ZnS thin film, XRD, SEM and absorption measurements were taken. It was determined that the ZnS thin film completely covering the surface of the n-GaAs semiconductor substrate has a hexagonal structure and a forbidden energy range of 3.83 eV. Later, the current-voltage (I–V), the capacitance-voltage (C–V) and the conductance-voltage (G/ω-V) measurements of the Au/ZnS/n-GaAs/In structure were taken at room temperature, and various important parameters of the structure were calculated with different methods. In order to reveal the effects of annealing temperature on the I–V, C–V and G/ω-V measurements of Au/ZnS/n-GaAs/In structure, the device was annealed at 100, 200 and 300 °C respectively for 5 min in nitrogen gas environment. The characteristic parameters were calculated again and the results were interpreted comparatively. At the same time, with the help of the C–V and G/ω-V characteristics, the dependence on applied bias voltage and frequency of the parameters such as dielectric constant, dielectric loss, loss tangent, ac electrical conductivity and real and imaginary part of electric modulus of the diode have been revealed. After thermal annealing at 200 °C, it has been determined that the ideality factor, turn-on voltage and leakage current values are at minimum level and the barrier height and rectification ratio values are at maximum level. In other words, it has been revealed that the optimum thermal annealing temperature for this device is 200 °C.