III-V Compound Solar Cells Research Articles

Effect of electron irradiation on perovskite films and devices for novel space solar cells

Perovskite solar cells (PSCs) are considered as one of the strong contenders for next-generation space solar cells due to their advantages of high efficiency, low cost, high specific power, and remarkable irradiation resistance compared with those of silicon-based and III-V compound solar cells. At present, one focuses on the irradiation effects of perovskite solar cells, but there are a few studies on the irradiation damage mechanism of the core perovskite film. To advance the spatial application of perovskite solar cells, this study conducts a comprehensive examination of the performance fluctuations exhibited by mixed-cation perovskite films and solar cells under electron irradiation. Initially, the Monte Carlo method is employed to simulate and predict the effect of electron irradiation on perovskite solar cells. Subsequently, in conjunction with the microstructure characterization and the comparison of optical/electrical performance of perovskite films before and after irradiation, the irradiation damage mechanism of film is elucidated and the electron irradiation reliability of perovskite solar cells is evaluated. The research demonstrates that mixed-cation perovskite film and solar cells exhibit outstanding resistance to electron irradiation. Even when exposed to 100 keV electron irradiation with a cumulative fluence of 5×10<sup>15</sup> e·cm<sup>–2</sup>, the PSCs maintain an average power conversion efficiency of 17.29%, retaining approximately 85% of their initial efficiency. This study provides sound theoretical and experimental evidence for designing the irradiation-resistant reinforcement of new-generation space solar cells, contributing to the improvement of their operational performance and reliability in space applications.

Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applications

Chemical beam epitaxy (CBE) is a possible breakthrough technology for photovoltaic (PV) solar energy applications. This paper reviews the present status of epitaxial technologies for high-efficiency III-V compound semiconductor solar cells. It also discusses the advantages of CBE technology over metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for III-V compound solar cell fabrication. CBE and related growth technologies can effectively produce high-efficiency and low-cost multi-junction III-V compound solar cells. Moreover, CBE may possibly reduce solar cell fabrication costs in the future because it utilizes source materials more efficiently than MBE and MOCVD. The cost of solar cell fabrication using CBE are estimated and compared with those using MOCVD and MBE.