A series of ZnO:N thin films were deposited by means of reactive pulsed laser deposition at room temperature on SiO2 glass slides, quartz, Al2O3, polyimide, silicon, and thermally oxidized SiO2. The p-type conductivity was confirmed by Hall effect-Van der Pauw measurements, with electrical parameters varying depending on the substrate deposition as follow: hole concentration between 2.4×1018 - 3.8×1017 cm-3, resistivity between 0.5 - 4 Ωcm, and mobility between 2 - 8 cm2V-1s-1. In situ X-ray photoelectron spectroscopy revealed identical binding energy values of the ZnO:N thin films across all substrates; the relative atomic concentrations varied between 49-53.8 at.%, 44-49 at.% and 2-2.4 at.% for zinc, oxygen and nitrogen respectively, due to over-quantification related to zinc particle splashing. Scanning electron microscopy confirmed a surface roughness of the films below 2 nm. Several wide and defect-related emissions were found by Cathodoluminescence; but the film deposited on quartz exhibited a unique, intense, and narrow blue band, the deconvolution of which revealed peaks at wavelengths of 430 nm and 461 nm. A growth rate of 14 nm/hour, and an etching rate of 2 nm/sec were found; these parameters were confirmed with the fabrication of smooth-walled ZnO:N thin films microstructures using photolithography. Finally, Thin Film Transistors (TFT) were fabricated. The devices exhibited low, but clear field effect current amplification, with a Ion/Ioff = 10. The feasibility of using room-temperature deposited p-type ZnO:N thin films for p-channel TFT fabrication was demonstrated.
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