Hydrogen-terminated Surface Research Articles

Decoding Hydrogen Desorption Kinetics in Porous Silicon: An Electrical Circuit Modeling Approach.

Solid-state hydrogen storage outperforms conventional storage methods in terms of safety and on-board applications. Porous Si (PS) is the optimized Si nanostructure with ample surface area (∼400 m2 g-1) and maximum dangling sites for hydrogenation. Though solid-state hydrogen storage in Si nanostructures, especially in porous Si, is extensively studied, the thermal desorption of hydrogen is rarely reported. This work investigates and analyzes the thermal desorption of a hydrogen-terminated PS surface using attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) to optimize the temperature for efficient desorption, as FTIR is sensitive to identifying the presence of Si hydride species (SiHx). The relative peak intensities in the spectra estimate the relative hydrogen retention (γ) for the analysis of the desorption kinetics. The desorption curves are divided into two zones on the time scale: the excitation zone and the recombination zone, separated by the recombination threshold point. The initially absorbed energy breaks the Si-Hx bonds in the excitation zone to reach the recombination threshold for H2 formation. The recombination zone is further divided into two subzones: the avalanche subzone (a sudden decrease in γ indicating molecular desorption) and the saturation subzone (almost constant γ with minimal desorption). The time constant from the first-order reaction kinetic fitting of the desorption curves explores the time-temperature correlation and the barrier energy estimation for the excitation and recombination zones. The analysis identifies the critical operating point for desorption as 100 °C and 4 min, with the optimized temperature of 250 °C. This article applies an analogous electrical circuit to compare the thermal hydrogen desorption and capacitor discharge circuit for analytical convenience.

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study.

Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

Enhancement in the Stability of Porous Silicon Using Electrochemical Grafting of Polymer 2,6 Dihydroxy Naphthalene

While there have been many advancements related to porous silicon, the reactivity of silicon with the ambient (particularly in environments with oxygen and humidity) has limited its use and integration in a wide variety of applications. Therefore, it is important to passivate the surface of nanostructured/porous silicon. To this end, there have been many reports in literature where passivation of bare (or unpassivated) porous silicon (UPSi) surface has been performed using gas phase techniques (thermal carbonization) and solution-based methods. In this work, we have studied the influence of the electrochemical deposition of polymer 2,6 dihydroxynaphthalene (2,6 DHN), in enhancing the stability of porous silicon surfaces.Porous silicon was synthesized by the electrochemical etching of pre-cleaned p-type silicon substrates with resistivity of about 0.001 Ω-cm to 0.005 Ω-cm, in a PTFE cell that we have fabricated, with 48% HF and ethanol mixture (7:3) as the electrolyte solution, at a current density of about 1.08 A/cm². The polymer solution used for electrodeposition was prepared as a solution of 1 mM 2,6-dihydroxy naphthalene (2,6-DHN) in 100 mL of 1x phosphate buffer solution, which was vacuum infiltrated in the synthesized porous silicon and electrodeposited on the same with the standard three electrodes chronopotentiometry method, at a constant current density of about 2 mA/cm² for 120 seconds. Electrodeposited porous silicon was kept on the hot plate for 10 min at 220℃, followed by a thermal treatment at 600℃, for 180 min, in the presence of N2 flow (1 L/min).The surface morphology of the unpassivated porous silicon (UPSi) and passivated porous silicon (PPSi) are shown in the insets of Fig. 1(a) and (b), respectively. This suggests the presence of an incredibly thin coating of the polymer on the pore walls. The pores in, both, unpassivated and passivated porous silicon samples (UPSi and PPSi) remained open and unobstructed, offering a uniform distribution of pores with sizes ranging between 5 nm and 20 nm.To perform a corrosion test of the UPSi and PPSi, we look at these layers after they have been exposed to 1 M NaOH aqueous solution, for different time durations. We have seen the formation of a spontaneous bubble on the surface of the UPSi sample during the test. To this end, we have observed visible and morphological changes of both UPSi and PPSi samples after the corrosion stability test for 5 seconds and 120 minutes, respectively, as seen in Fig. 1(a) to (h). Due to the very high internal area and the hydrogen-terminated surface, in an aqueous solution, UPSi is oxidized by water at room temperature and degrades. In comparison, the PPSi sample is stable for more than 120 minutes.Electrochemical characterisation of UPSi and PPSi was performed in a 10 mM NaCl aqueous electrolyte with a three-electrode cyclic voltammetry (C-V) setup. C-V measurements of the UPSi sample show strong redox reaction in the potential window of 0 V to 1 V, whereas, the PPSi sample shows a nearly constant charging current response in the potential window of -1 V to 1 V, as shown in Fig. 1(i). These results emphasize that the passivation of porous silicon using 2,6 DHN polymer makes it more stable and less reactive in an aqueous medium. Figure 1

What Are the Key Factors for the Detection of Peptides Using Mass Spectrometry on Boron-Doped Diamond Surfaces?

We investigated the use of boron-doped diamond (BDD) with different surface morphologies for the enhanced detection of nine different peptides by matrix-assisted laser desorption/ionisation mass spectrometry (MALDI-MS). For the first time, we compared three different nanostructured BDD film morphologies (Continuous, Nanograss, and Nanotips) with differently terminated surfaces (-H, -O, and -F) to commercially available Ground Steel plates. All these surfaces were evaluated for their effectiveness in detecting the nine different peptides by MALDI-MS. Our results demonstrated that certain nanostructured BDD surfaces exhibited superior performance for the detection of especially hydrophobic peptides (e.g., bradykinin 1-7, substance P, and the renin substrate), with a limit of detection of down to 2.3 pM. Further investigation showed that hydrophobic peptides (e.g., bradykinin 1-7, substance P, and the renin substrate) were effectively detected on hydrogen-terminated BDD surfaces. On the other hand, the highly acidic negatively charged peptide adrenocorticotropic hormone fragment 18-39 was effectively identified on oxygen-/fluorine-terminated BDD surfaces. Furthermore, BDD surfaces reduced sodium adduct contamination significantly.

Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending

The surface transfer doping model has been extensively adopted as a mechanism to account for the generation of hole accumulation layers below hydrogen-terminated diamond (H-diamond) surfaces. To achieve effective surface transfer doping, surface electron acceptor materials with high electron affinity (EA) are required to produce a high density of two-dimensional hole gas (2DHG) on the H-diamond subsurface. We have established ingenious theoretical models to demonstrate that even if these solid materials do not have a high EA value, they remain capable of absorbing electrons from the H-diamond surface by forming a negatively charged interface to act as a surface electron acceptor in the surface transfer doping model. Our calculations, particularly for the local density of states, provide compelling evidence that the effect of an interface with negative charges induces an upward band bending on the H-diamond side. Furthermore, the valence band maximum of the diamond atoms at the interface crosses the Fermi level, giving rise to strong surface transfer p-type doping. These results give a strong theoretical interpretation of the origin of 2DHG on H-diamond surfaces. The proposed guidelines contribute to further improvements in the performance of 2DHG H-diamond field effect transistors.

Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond.

The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.

Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation

Atomic layer deposition (ALD) has been proven to be a versatile method for the deposition of thin films of various materials. It yields films with exceptional conformality and allows tunable film compositions with control of film thickness at the atomic level. Thin films of Al oxide, nitride, and oxynitride are deposited via ALD using Al(CH3)3 (TMA)/AlCl3 with H2O/NH3. Herein, surface chemical reactions are examined using density functional theory calculations to elucidate the adsorption, oxidation, and nitridation of precursors [TMA and AlCl3] as well as the mechanism controlling the composition of Al oxynitride thin films obtained through ALD. The hydrogen-terminated substrate surface is transformed into a CH3/Cl-terminated surface after the reaction with the TMA/AlCl3 precursors. The molecular adsorption of TMA occurs through a spontaneous reaction, whereas that of AlCl3 requires a slight energy input. Although the adsorption energy of AlCl3 is higher than that of TMA, the activation energy and energy change of AlCl3 adsorption are higher and lower than those of TMA, respectively; furthermore, the use of AlCl3 results in the generation of a corrosive by-product (HCl). A similar tendency is observed in the second ALD half reaction, which is oxidation. Nitride formation is endothermic for molecularly adsorbed AlCl3 but exothermic for TMA. Furthermore, the investigation of the exchange reactions between surface moieties and excess gaseous reactants reveals a preference for the substitution of N by O, which is attributed to differences in bond energies between the surface moieties and the surface metal atom, as well as between H2O and NH3.

Fabrication of polycrystalline phosphorus-doped diamond electrodes from red phosphorus.

Polycrystalline phosphorus-doped diamond was fabricated by the quartz-tube-type microwave plasma-assisted chemical vapor deposition method. Significantly, red phosphorus was used as a source of phosphorous, instead of PH3. Phosphorus-doped diamond electrodes with hydrogen-terminated and oxygen-terminated surfaces were investigated for the redox reactions of K3[Fe(CN)6] and [Ru(NH3)6]Cl3. The carrier concentration was estimated as 2.1-5.3 × 1018 cm-3 from electrochemical impedance measurements. Polycrystalline phosphorus-doped diamond shows great promise as chemical electrode materials.

Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air

Manipulation and patterning of diamond surface chemistry is of interest for a wide range of diamond-based technologies. We report the patterned oxidation of hydrogen-terminated diamond surfaces with sub-monolayer (ML) precision by a deep-UV two-photon process performed in air. Using focused laser pulses of photon energy 4.66 eV (266 nm; below the diamond bandgap of 5.47 eV), hydrogen-terminated (001) surfaces were exposed with calibrated doses to remove carbon with a precision of 0.02 ML. The measurement of the electrical properties of the laser-exposed zone between ohmic electrodes enabled monitoring of the transition from a conducting H-terminated surface to insulating O-terminated. The surface resistance increases by more than 7 orders of magnitude for doses corresponding to 0.5 ML, and the I–V characteristics show a transition from linear to nonlinear for doses above 0.30 ML. We show that this behavior agrees well with a surface percolation model for carrier diffusion in which the laser etch rate for the H-terminated top layer is the same as for O-terminated. Hence, this work reveals an ultra-precise method for modifying the sub-monolayer surface chemistry with the practical advantages of a laser-induced mechanism compared to conventional plasma or chemical processing methods.

First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide.

The realization of quantum sensors using spin defects in semiconductors requires a thorough understanding of the physical properties of the defects in the proximity of surfaces. We report a study of the divacancy (VSiVC) in 3C-SiC, a promising material for quantum applications, as a function of surface reconstruction and termination with -H, -OH, -F and oxygen groups. We show that a VSiVC close to hydrogen-terminated (2 × 1) surfaces is a robust spin-defect with a triplet ground state and no surface states in the band gap and with small variations of many of its physical properties relative to the bulk, including the zero-phonon line and zero-field splitting. However, the Debye-Waller factor decreases in the vicinity of the surface and our calculations indicate it may be improved by strain-engineering. Overall our results show that the VSiVC close to SiC surfaces is a promising spin defect for quantum applications, similar to its bulk counterpart.

(Invited, Digital Presentation) Langmuir-Type Formulation for Atomic-Order Surface Reactions of Reactant Gases on Si (100) and Ge (100) Surfaces

Atomic-order surface reaction processes of reactant gases on the Si (100) and Ge (100) surfaces are reviewed. The site density on the (100) surface where the reactant molecules are adsorbed and react is estimated from the maximum self-limited adsorption/reaction amount of reactant gas on the (100) surface. The atomic-order amounts of reactant gases under self-limiting adsorption/reaction conditions are described using a modified Langmuir-type mechanism as a function of reactant gas partial pressure and exposure time at a specified temperature. For the hydrogen-terminated surface, it is proposed that the reactant molecules are physically adsorbed on the hydrogen-terminated sites and react with the hydrogen terminated on the surface. Fairly good agreement is obtained between all experimental data and the modified Langmuir-type mechanism for the self-limited adsorption/ reaction.

Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

The two-dimensional hole gas (2DHG) at hydrogen-terminated diamond (H-diamond) surface has been widely used in the development of diamond-based electronics. However, the carrier transport behaviors of 2DHG are still poorly understood due to the difficulty in controlling surface adsorbates on H-diamond. In this work, the temperature dependence of the electrical properties of 2DHG on H-diamond was investigated through Hall effect measurements before and after thermal annealing. The results revealed that the establishment of 2DHG equilibrium state was closely related to surface adsorbates, and temperature-induced thermal desorption of adsorbates would lead to a decrease in carrier concentration and an enhancement of mobility on H-diamond. Based on this observation, the carrier mobility of 2DHG (at 300 K) was improved from 170 to 340 cm2 V−1 s−1 after thermal annealing to 400 K. Moreover, with thermal desorption of adsorbates, the activation energy of conductance exhibited an increasing tendency, and the carrier concentration became more dependent on temperature, which can be well explained by percolation theory. A dynamic equilibrium process was also proposed to illustrate the influence of surface adsorbate on carrier concentration and mobility of 2DHG, which provides a feasible method to regulate carrier mobility and concentration on H-diamond surface.

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm−1, 161 mV/dec, and 106, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 V−1 s−1 in the hole density range of 2 − 6 × 1012 cm−2, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications.

Grafting of Organophosphonic Acid Monolayers on Hydrogen-Terminated Silicon Surface and Secondary Functionalization in Supercritical Carbon Dioxide Media.

The monolayer grafting on the oxide-free Si surface is challenging due to vulnerability of the surface against oxide formation in an ambient atmosphere. Most of the conventional studies focused on organic solvent-based chemistry and solvent and substrate interfaces, and residual solvents after the monolayer grafting play a key role in producing the highly stable monolayers. CO2 in its supercritical state (SCCO2) provides an elegant engineering solution for the problem faced as it can be used as inert processing environment and as carrier fluid for monolayer grafting taking up the role of organic solvents. In this work, monolayers of alkyl organophosphonic acids (OPAs) and functional OPAs were grafted on hydrogen-terminated oxide-free Si surfaces using the SCCO2 process. Grafted monolayers were physically and chemically characterized to verify the successful monolayer formation and determine the nature of the covalent binding configuration on the surface. To broaden the prospects of practical utility of the process and the OPA monolayer, the (3-bromopropyl)phosphonic acid (BPPA) monolayer was demonstrated to undergo secondary functionalization by terminal group substitution to convert the Br terminal group to the OH terminal group and secondary monolayer grafting to assemble 4-fluorothiophenol on top of the BPPA monolayer. The ability of monolayers to sustain secondary functionalization processing qualitatively hints toward ordered and stable monolayers of OPAs. The developed SCCO2 process in this work presents a single-step, green, and scalable method to graft the OPA monolayer on oxide-free Si which can employed in the future for monolayer doping, highly selective biochemical sensors, and targeted biological interactions.

Magnetic resonance study of novel detonation nanodiamonds originated from non-conventional explosives

Detonation nanodiamonds (DND) are conventionally synthesized from a mixture of trinitrotoluene (TNT) and hexogen (RDX) explosives. It is generally believed that the internal structure of DNDs, which consists of a diamond core covered with a partially disordered shell, is very similar in all DNDs. Variations of the properties of DNDs are usually associated with the surface functionalization of the hydrogen-terminated surface with various chemicals to obtain a family of different nanodiamonds. In this paper, we report on the synthesis, electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) study of novel DNDs synthesized from a few non-conventional explosives, which have not previously been used for this purpose. We show that DNDs synthesized from different explosive precursors display different ratios of carbon atoms in the core and shell. The variation of this ratio correlates well with variations in the content of paramagnetic defects and 13C nuclear spin-lattice relaxation rates. The presented data advances new opportunities for controllable synthesis of DNDs with engineered properties.

Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel

We fabricated (001) vertical diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with oxidized Si-terminated (C–Si–O) diamond channels on the surfaces and trench sidewalls. The C–Si–O diamond surface is approximately 1.0 eV weaker in negative electron affinity than the hydrogen-terminated (C–H) diamond surface, resulting in a smaller valence band bending between the interface of C–Si–O diamond surface and Al2O3, and larger the difference between the energy values of the fermi level and the valence band on the top (EF−EV), and the threshold voltage (Vth) shifts in the negative direction. As a result, the maximum drain current density was 108 mA/mm, the Vth was −9.0 V. Compared with conventional vertical diamond FETs using a C–H channel, the Vth was shifted more than 20 V in the negative direction to reach normally-off mode. The normally-off operation was achieved while maintaining high current density, which is the first case of normally-off operation that has been observed in vertical diamond FETs. In, addition, it was confirmed that the diode functions as a freewheeling diode by adding a reverse drain voltage and allowing current to flow, and the change of current-voltage characteristics was also investigated by swapping the source and drain positions and performing measurements.

Ammonium chloride (–NH3+Cl-) salt formation from dichlorosilane decomposition and its potential impact on silicon nitride atomic layer deposition

Plasma-enhanced atomic layer deposition (PEALD) has been demonstrated to be a promising technique for controlled growth of silicon nitride (SiNx) thin films. Based on first-principles calculations, we present the effects of by-product production on the reaction of dichlorosilane (DCS) as the Si precursor with a hydrogen-terminated N-rich surface created upon ammonia (NH3) plasma treatment relevant to thin film growth. The presence of amines, especially primary amines (–NH2), plays a key role in DCS decomposition by generating H and Cl atoms as by-products. Our work clearly demonstrates that the by-products can be strongly bound to the surface by forming stable –NH3+Cl- complexes, which may in turn affect the SiNx ALD process. The HCl desorption reaction, i.e., –NH3+Cl- → –NH2 + HCl(g), is predicted to be endothermic by 1.1–1.2 eV, depending on HCl surface coverage. The large HCl binding energy suggests that a high thermal energy would be required for its removal from the surface, as evidenced by results from experimental spectroscopic analysis. We also discuss how the by-product presence inhibits DCS adsorption and decomposition, leading to a decrease in the SiNx growth rate.

Theoretical Investigations on the Interactions of Urea with Hydroxyl and Non-Hydroxyl Hydroxyapatite Surface

We performed an investigation on urea interacting with hydroxyapatite (HA). The oxygen atoms on HA are either left alone or added with hydrogen to create hydroxyl to resemble the HA surface. Using B3LYP and 3 different basis sets, it was found that urea was able to interact positively with either hydroxyl or non-hydroxyl surface of HA. The Gaussian 09 and Multiwfn software were employed to conduct the calculations. The most favorable interaction has interaction energy of –1.36 eV, which was obtained with the 2 largest basis sets considered, on the pure hydroxyl surface. From the topology analysis on electron density and the non-covalent interaction analysis, it was found that the main attractions between urea and HA were due to the carbonyl oxygen and hydrogen of urea, and hydrogen, oxygen, and calcium on the HA surface. The bond length of newly bonded atoms ranges from 1.62 to 5.18 Å, whereas the energy gap has range between 0.46 to 1.14 eV. All the analysis performed in this study agreed with the results obtained in the formation of favorable interactions and complement previous experimental results that HA can bond with urea molecule. HIGHLIGHTS First known attempt to compare hydrogen-terminated and non-terminated surface of HA in urea adsorption The atoms involved in the adsorption were identified, and electronic structure of the possible combination was analysed and studied using topology and non-covalent interaction analysis Urea attached to both surfaces are stable, with negative interaction energy, confirming experiments’ results that urea can be adsorbed to HA GRAPHICAL ABSTRACT

Atomic Imaging of Interface Defects in an Insulating Film on Diamond.

The insulator/semiconductor interface structure is the key to electric device performance, and much interest has been focused on understanding the origin of interfacial defects. However, with conventional techniques, it is difficult to analyze the interfacial atomic structure buried in the insulating film. Here, we reveal the atomic structure at the interface between an amorphous aluminum oxide and diamond using a developed electron energy analyzer for photoelectron holography. We find that the three-dimensional atomic structure of a C-O-Al-O-C bridge between two dimer rows of the hydrogen-terminated diamond surface. Our results demonstrate that photoelectron holography can be used to reveal the three-dimensional atomic structure of the interface between a crystal and an amorphous film. We also find that the photoelectron intensity originating from the C-O bonds is strongly related to the interfacial defect density. We anticipate significant progress in the study of amorphous/crystalline interfaces based on their three-dimensional atomic structures analysis.

Rapid, noncontact, sensitive, and semiquantitative characterization of buffered hydrogen-fluoride-treated silicon wafer surfaces by terahertz emission spectroscopy

Advances in modern semiconductor integrated circuits have always demanded faster and more sensitive analytical methods on a large-scale wafer. The surface of wafers is fundamentally essential to start building circuits, and quantitative measures of the surface potential, defects, contamination, passivation quality, and uniformity are subject to inspection. The present study provides a new approach to access those by means of terahertz (THz) emission spectroscopy. Upon femtosecond laser illumination, THz radiation, which is sensitive to the surface electric fields of the wafer, is generated. Here, we systematically research the THz emission properties of silicon surfaces under different surface conditions, such as the initial surface with a native oxide layer, a fluorine-terminated surface, and a hydrogen-terminated surface. Meanwhile, a strong doping concentration dependence of the THz emission amplitude from the silicon surface has been revealed in different surface conditions, which implies a semiquantitative connection between the THz emission and the surface band bending with the surface dipoles. Laser-induced THz emission spectroscopy is a promising method for evaluating local surface properties on a wafer scale.