The trapping of hydrogen in crystalline silicon at a buried defect layer has been investigated by Raman scattering spectroscopy. The defect concentration of the trap layer was created by various implantation doses of hydrogen ions. Hydrogen was additionally inserted by subsequent plasma exposure at various temperatures. The basic platelet formation and hydrogen trapping mechanisms are investigated with regard to the use for hydrogen induced silicon layer exfoliation. The analyzed results exhibit that the platelet formation mechanism highly depends on the hydrogenation temperature and on the vacancy concentration.