Hybrid Silicon Nitride Research Articles

Compact hybrid silicon nitride and lithium niobate nano-film photoelectronic reversible logic gate

Photoelectronic hybrid logic operation improves digit circuit efficiency without any additional photoelectric conversion, especially a photoelectronic reversible logic gate may reduce energy dissipation. In this paper, a compact photoelectronic reversible logic gate is proposed based on a hybrid silicon nitride and lithium niobate nano-film waveguide. Tow Mach-Zehnder modulators are cascaded together to construct the main part of the compact photoelectronic reversible logic gate. The whole length of the gate is only 4.4mm, one hundredth of the length of the common proton exchange lithium niobate modulator. By operating at the wavelength of 1.55μm, the proposed Mach-Zehnder modulator only requires 4.9V voltage to complete a full cross-coupling, which is well compatible with CMOS technology. It is demonstrated that at the wavelength range of 1.4μm to 1.6μm, the average insertion loss is 0.6dB, the minimum crosstalk is -47dB, and the maximum extinction ratio is 41dB; in the voltage range of 4V to 6V, the average insertion loss is 0.63dB, the minimum crosstalk is -26dB, and the maximum extinction ratio is 22dB. These features indicate that the photoelectronic reversible logic gates have good performances, bringing the photoelectronic logic gates into a new design parameter space and providing a possible solution for easing the electronic bottleneck.

Hybrid Silicon Nitride Photonic Integrated Circuits Covered by Single-Walled Carbon Nanotube Films.

The integration of low-dimensional materials with optical waveguides presents promising opportunities for enhancing light manipulation in passive photonic circuits. In this study, we investigate the potential of aerosol-synthesized single-walled carbon nanotube (SWCNT) films for silicon nitride photonic circuits as a basis for developing integrated optics devices. Specifically, by measuring the optical response of SWCNT-covered waveguides, we retrieve the main SWCNT film parameters, such as absorption, nonlinear refractive, and thermo-optic coefficients, and we demonstrate the enhancement of all-optical wavelength conversion and the photoresponse with a 1.2 GHz bandwidth.

Low-loss grating coupler based on inter-layer mode interference in a hybrid silicon nitride platform.

Surface grating couplers are an important component for interfacing photonic integrated circuits with optical fibers. However, conventional coupler designs typically provide limited performance due to low directionality and poor fiber-to-grating field overlap. The efficiency can be improved by using non-uniform grating structures at the expense of small critical dimensions complicating the fabrication process. While uniform gratings can alleviate this constraint, they produce an exponentially decaying near-field with the Gaussian fiber mode overlap limited to a theoretical maximum of 80%. In this work, we propose a uniform grating coupler that circumvents this field overlap limitation. This is achieved by leveraging inter-layer mode interference through a virtual directional coupler effect in a hybrid amorphous-silicon (α-Si) on silicon nitride (Si3N4) platform. By optimizing the inter-layer gap and grating geometry, a near-Gaussian profile of the out-radiated beam is achieved, resulting in an unprecedented grating-to-fiber overlap of 96%. The full three-dimensional (3D) finite-difference time-domain (FDTD) simulations show a high directionality of 84% and a record coupling loss of -1.27 dB with a 1-dB bandwidth of 20 nm for the uniform grating coupler design. Our device is designed for a wavelength of 950 nm aimed for use in hybrid quantum photonic integrated circuits using III-V quantum dot single photon sources.

Ultrafast tunable lasers using lithium niobate integrated photonics

Early works1 and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits2,3, modulators with improved half-wave voltage4,5, electro-optic frequency combs6 and on-chip electro-optic devices, with applications ranging from microwave photonics to microwave-to-optical quantum interfaces7. Although recent advances have demonstrated tunable integrated lasers based on LiNbO3 (refs. 8,9), the full potential of this platform to demonstrate frequency-agile, narrow-linewidth integrated lasers has not been achieved. Here we report such a laser with a fast tuning rate based on a hybrid silicon nitride (Si3N4)–LiNbO3 photonic platform and demonstrate its use for coherent laser ranging. Our platform is based on heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 through direct bonding at the wafer level, in contrast to previously demonstrated chiplet-level integration10, featuring low propagation loss of 8.5 decibels per metre, enabling narrow-linewidth lasing (intrinsic linewidth of 3 kilohertz) by self-injection locking to a laser diode. The hybrid mode of the resonator allows electro-optic laser frequency tuning at a speed of 12 × 1015 hertz per second with high linearity and low hysteresis while retaining the narrow linewidth. Using a hybrid integrated laser, we perform a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment. Endowing Si3N4 photonic integrated circuits with LiNbO3 creates a platform that combines the individual advantages of thin-film LiNbO3 with those of Si3N4, which show precise lithographic control, mature manufacturing and ultralow loss11,12.

Compact thin film lithium niobate folded intensity modulator using a waveguide crossing

A small footprint, low voltage and wide bandwidth electro-optic modulator is critical for applications ranging from optical communications to analog photonic links, and the integration of thin-film lithium niobate with photonic integrated circuit (PIC) compatible materials remains paramount. Here, a hybrid silicon nitride and lithium niobate folded electro-optic Mach Zehnder modulator (MZM) which incorporates a waveguide crossing and 3 dB multimode interference (MMI) couplers for splitting and combining light is reported. This modulator has an effective interaction region length of 10 mm and shows a DC half wave voltage of roughly 4.0 V, or a modulation efficiency (Vπ ·L) of roughly 4 V·cm. Furthermore, the device demonstrates a power extinction ratio of roughly 23 dB and shows .08 dB/GHz optical sideband power roll-off with index matching fluid up to 110 GHz, with a 3-dB bandwidth of 37.5 GHz.

Self-mode-locking in a high-power hybrid silicon nitride integrated laser.

Integrated mode-locked lasers are useful tools in microwave photonic applications as a local oscillator. In particular, hybrid integrated lasers could easily be integrated with passive processing circuits. In this Letter, we report on the self-mode-locking of a hybrid integrated laser comprising two indium phosphide gain sections and a silicon nitride feedback circuit that filters light using two ring resonators. The hybrid laser is shown to mode-lock and to have a mostly frequency-modulated field in the cavity using a stepped-heterodyne optical complex spectrum analysis. A mostly frequency modulated field output is good for high powers per line due to a more continuous emission, compared with mode-locked lasers using a saturable absorber; additionally, the filter limits the bandwidth of the comb, condensing the power to the fewer comb lines.

Silicon-nitride microring resonators for nonlinear optical and biosensing applications.

We discuss the design, fabrication, and characterization of silicon-nitride microring resonators for nonlinear-photonic and biosensing device applications. The first part presents new theoretical and experimental results that overcome highly normal dispersion of silicon-nitride microresonators by adding a dispersive coupler. The latter parts review our work on highly efficient second-order nonlinear interaction in a hybrid silicon-nitride slot waveguide with nonlinear polymer cladding and silicon-nitride microring application as a biosensor for human stress indicator neuropeptide Y at the nanomolar level.

High-efficiency lithium niobate modulator for K band operation

This paper reports a hybrid silicon nitride–lithium niobate electro-optic Mach–Zehnder-interferometer modulator that demonstrates overall improvements in terms of half-wave voltage, optical insertion loss, extinction ratio, and operational bandwidth. The fabricated device exhibits a DC half-wave voltage of ∼1.3 V, a static extinction ratio of ∼27 dB, an on-chip optical loss of ∼1.53 dB, and a 3 dB electro-optic bandwidth of 29 GHz. In addition, this device operates beyond the 3 dB bandwidth, where a half-wave voltage of 3 V is extracted at 40 GHz when the device is biased at quadrature. The modulator is realized by strip-loading thin-film lithium niobate with low-pressure chemical vapor deposited silicon nitride; this enables reduced on-chip losses and allows for a lengthened 2.4 cm long interaction region that is specifically engineered for broadband performance.

Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform.

A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach-Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.

Investigation of Hybrid Silicon-Nitride/Polymer Waveguides for Second-Harmonic Generation

We propose a hybrid silicon-nitride (Si3N4 or SiN for short)/nonlinear polymer waveguide to achieve second-harmonic generation of an input 1550 nm signal by modal phase-matching between zero-order spatial mode at 1550 nm and second-order mode at 775 nm. We explore and optimize two cases, single channel waveguide and slot waveguide, by varying the waveguide dimensions. For TE polarized light, the optimum slot waveguide exhibits an effective interaction area A eff of about 16 μ m2, which is an order-of-magnitude improvement over the single channel waveguide and can translate to a high value of effective nonlinearity. We also show that the optimum slot waveguide geometry is robust with respect to fabrication uncertainties and bending effects.

On-Chip Integrated Quantum-Dot-Silicon-Nitride Microdisk Lasers.

Hybrid silicon nitride (SiN)-quantum-dot (QD) microlasers coupled to a passive SiN output waveguide with a 7 µm diameter and a record-low threshold density of 27 µJ cm-2 are demonstrated. A new design and processing scheme offers long-term stability and facilitates in-depth QD material and device characterization, thereby opening new paths for optical communication, sensing, and on-chip cavity quantum optics based on colloidal QDs.

Design of a polymer-filled silicon nitride strip/slot asymmetric hybrid waveguide for realizing both flat dispersion and athermal operation.

An asymmetric strip/slot hybrid silicon nitride waveguide is designed to simultaneously realize athermal operation and flat dispersion. The slot filling and upper cladding materials are negative thermal-optical coefficient (TOC), low refractive index polyurethane acrylate, while the left and right cladding layers are positive TOC, high refractive index silicon nitride. With suitable waveguide parameter selection, an optimum strip/slot hybrid silicon nitride waveguide exhibits an effective TOC of 1.263×10-7/K at 1550 nm, flattened dispersion in the wavelength range from 1200 to 1800 nm with the maximum dispersion of 30.51 ps/(nm·km), and a minimum of 10.89 ps/(nm·km). The proposed hybrid waveguide has great potential in building up broadband athermal microresonator optical frequency combs.

Optical bistability in a silicon nitride microring resonator with azo dye-doped liquid crystal as cladding material

This investigation reports observations of optical bistability in a silicon nitride (SiN) micro-ring resonator with azo dye-doped liquid crystal cladding. The refractive index of the cladding can be changed by switching the liquid crystal between nematic (NLC) and photo-induced isotropic (PHI) states by. Both the NLC and the PHI states can be maintained for many hours, and can be rapidly switched from one state to the other by photo-induced isomerization using 532 nm and 408 nm addressing light, respectively. The proposed device exhibits optical bistable switching of the resonance wavelength without sustained use of a power source. It has a 1.9 nm maximum spectral shift with a Q-factor of over 10000. The hybrid SiN- LC micro-ring resonator possesses easy switching, long memory, and low power consumption. It therefore has the potential to be used in signal processing elements and switching elements in optically integrated circuits.

Empirical Stress Intensity Factors for Surface Cracks under Rolling Contact Fatigue

This article contains empirical equations for the K I , K II , and K III stress intensity factors (SIFs) for semi-elliptical surface cracks for brittle materials subjected to rolling contact fatigue (RCF) as a function of the contact patch diameter, angle of crack to the surface, max pressure, position along the crack front, and aspect ratio of the crack. The equations were developed from SIFs calculated by parametric three-dimensional (3D) finite element analysis (FEA) for a range of contact patch radii (1b, 2b, and 3b) and angles of the crack to the surface (0°, 45°, and 60°). Calculating mixed-mode SIFs for surface cracks subject to RCF using 3D FEA is computationally complex because of extreme mesh refinement required at multiple levels to capture steep stress gradients. The comprehensive empirical curve fits presented are accurate to within 0.5% of FE simulations and are useful for component design where contact-initiated surface fatigue damage is important such as in gears, roller bearings, and railway wheels. The results are of particular relevance to hybrid silicon nitride ball bearings, which are susceptible to failure from fatigue spalls emanating from preexisting surface cracks, due to crack growth driven by RCF (G. Levesque and N. K. Arakere, An investigation of partial cone cracks in silicon nitride balls. International Journal of Solids and Structures, 2008, 45:6301–6315).

An investigation of partial cone cracks in silicon nitride balls

Hybrid silicon nitride ball/steel raceway bearings are used in advanced aircraft engines and space propulsion systems. Silicon nitride is a brittle material and partial cone cracks, or c-cracks, originate from contact interactions during manufacturing. These cracks limit the Rolling Contact Fatigue (RCF) life of the balls. Here the authors examine subsurface Hertzian stresses between contacting spheres, using an analytical stress solution, to investigate their applicability to predicting and characterizing crack size and shape. The authors also incrementally develop these cracks through an iterative crack growth procedure using a 3D finite element analysis. Comparisons are then made to experimental images of the flaws in silicon nitride. By varying the initial conditions during the contact interaction of the balls we demonstrate that a wide range of cone and partial cone cracks, observed in practice, can be generated using both the analytical and numerical fracture mechanics approaches. Furthermore, an expression is presented for the impact velocity that induces a cone crack from a maximum radial stress criterion at the contact periphery.

Residual Stress Measurements Of Silicon NitrideAnd Coated Tungsten Carbide Rolling ContactElements

High quality ceramic materials used in rolling element bearing applications show some practical advantages over traditional bearing steels. Silicon nitride has been found to have the optimum combination of properties suitable for certain high speed, low mass and high stiffness applications. Hybrid silicon nitride rolling element bearings are now supplied as standard components by manufacturers. Coatings may also be considered to enhance the capability of hybrid bearings for applications such as high speed and high temperature. A modified four-ball machine was employed to produce accelerated rolling contact fatigue failures of these materials. Silicon nitride verses steel, silicon nitride verses silicon nitride and tungsten carbide coating verses steel configurations were considered. The lubricated tests were performed at relatively high loads and speeds ie. maximum compressive stress from 4.5 to 8.1 GPa at 4000 to 10,000 r/min. Measurement of residual stresses is an important aspect of surface engineering. An X-ray method was employed since it is the only practical non-destructible means of measuring residual stress of these materials at the pre-test and post-test stages. Experimental testing, surface examinations and residual stress measurements are described for case study failures. Results are presented for a selection of surface failures of hot isostatically pressed silicon nitride and thermally sprayed tungsten carbide rolling elements. The role of the residual stress within these materials before and after rolling contact fatigue testing is discussed.