Human Electrostatic Discharge Research Articles

A study of the effects on human electrostatic discharge current waveform verification

A study of the effects on human electrostatic discharge current waveform verification

Human Metal ESD: Design of a Full-Wave Model and an Improved Compact Generator

A full-size, full-wave human body model has been designed. Compared with a real human-metal electrostatic discharge (ESD), similar fields and currents are obtained from the numerical model. A resistive surface sheet is used in microwave studio to control the currents on the air-filled body. Its performance is verified by comparing it to the currents and fields from the real human ESD. A subcircuit models the time-dependent resistance of the spark using the well-known Rompe–Weizel spark resistance model. Real human metal ESD does not reveal the double hump shape as shown in the IEC standard. To create a generator that reproduces the real human metal ESD current waveform, a compact ESD generator was designed, which is based on matching the impedance of real human metal mode ESD with the impedance of the compact ESD generator. Furthermore, a circuit-based simulator is presented. It is based on a PCB implementation of the equivalent circuit of the human metal ESD.

Design of an Artificial Dummy for Human Metal Model ESD

Electrostatic discharge (ESD) generators do not match each other, nor do the currents and fields from the discharge of a human via a piece of metal match those from ESD generators. A more realistic characterization of the field performance of a device under test (DUT) can be achieved using human subjects. To avoid using actual humans, while still achieving similar results, a full-size dummy has been designed. Its performance is verified by comparing it to currents and fields from human ESD and ESD generators.

A 16-kV HBM RF ESD Protection Codesign for a 1-mW CMOS Direct Conversion Receiver Operating in the 2.4-GHz ISM Band

A decreasing-sized π -model electrostatic discharge (ESD) protection structure is presented and applied to protect against ESD stresses at the RF input pad of an ultra-low power CMOS front-end operating in the 2.4-GHz industrial-scientific-medical band. The proposed ESD protection structure is composed of a pair of ESD devices located near the RF pad, another pair close to the core circuit, and a high-quality integrated inductor connecting these two pairs. This structure can sustain a human body-model ESD level higher than 16 kV and a machine-model ESD level higher than 1 kV without degrading the RF performance of the front-end. A combined on-wafer transmission line pulse and RF test methodology for RF circuits is also presented confirming previous results. The front-end implements a zero-IF receiver. It has been implemented in a standard 2P6M 0.18-μm CMOS process. It exhibits a voltage gain of 24 dB and a single-sideband noise figure of 8.4 dB, which make it suitable for most of the 2.4-GHz wireless short-range communication transceivers. The power consumption is only 1.06 mW from a 1.2-V voltage supply.

Characterization of Human MetalESDReference Discharge Event and CorrelationofGenerator Parameters to Failure Levels—Part I: Reference Event

Electrostatic discharge (ESD) generators are used for testing the robustness of electronics toward ESD. Most generators are built in accordance with the IEC 61000-4-2 specifications. Using only a few parameters, this standard specifies the peak current, the rise time and the falling edge. Lacking a transient field specification, test results vary depending on which generator is used, even if the currents are quite similar. Such a specification is needed to improve the test repeatability. As for the current, the specification should be based on a reference human metal ESD event. While keeping the presently set peak current and rise time values, such a reference ESD (5 kV, 850-/spl mu/m arc length) is identified and specifications for current derivative, fields, and induced voltages are derived. The reference event parameters are compared to typical ESD generators.

Fast-transient susceptibility of a D-type flip-flop

Human electrostatic discharge (ESD) produces a transient current pulse with a very fast risetime, which can be a source of electromagnetic interference in digital devices. The focus of this paper is the radiated susceptibility of D-type flip-flops implemented in various CMOS and TTL logic technologies. A transient impulse was used to simulate the radiated field produced during an ESD event. A synchronized-disturbance testing methodology is developed that allows accurate control of the instant at which the disturbing signal is applied to the data input lines during an operational cycle of the circuit. The study reveals that these devices are susceptible only during certain time intervals during an operational cycle. The particular interval during which a flip-flop is susceptible is dependent on the logic state of the data input line, the implementation technology of the flip-flop, and the amplitude of the disturbing signal. The total width of the susceptibility intervals is a device parameter that can be used to determine the probability that the flip-flop will fail in the presence of random transient interference pulses.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Electrostatic Discharge Protection Measures for Membrane Keyboards

The trend to minaturized solid-state electronics has made appliance controls more vulnerable to human electrostatic discharge (ESD). Membrane switches may increase the likelihood of damage, since the inherently thin membranes provide less isolation than traditional full travel switches. In contrast to the manufacturing environment, relatively little attention has been given to ESD protection in service, where conditions of use cannot be controlled and where protection depends on the choice of keyboard materials and design. Electronic components can be damaged or destroyed and digital signals and data altered when ESD penetrates or circumvents keyboard dielectrics or electromagnetically induces transients in interface circuitry. Keyboard protection measures fall into three categories: grounded shielding, dielectric encapsulation, and transient suppression. Specific illustrations of these are cited. ESD simulators are discussed and practical suggestions given on objectives, preparation, and approach to ESD evaluation and testing of membrane keyboards.