Hot Probe Research Articles

Enhancing Low-Temperature Sensor Applications: Synergistic Effects of Ni Doping and SnO2 Interlayer on Spin-Coated ZnO Thin Films on Glass Substrate

This study investigates the effects of Nickel doping and a SnO2 interlayer on the structural, morphological, optical, and electrical properties of ZnO thin films. Undoped and Ni-doped ZnO films were fabricated on glass substrates, with and without an SnO2 interlayer, using the sol-gel spin coating method. The samples—denoted as ZG (undoped ZnO), NZG (Ni-doped ZnO), ZSG (undoped ZnO with SnO2 interlayer), and NZSG (Ni-doped ZnO with SnO2 interlayer)—underwent comprehensive characterization via XRD, AFM, PL, UV-Vis spectroscopy, Hall effect measurements, Hot probe, and Two-point method. XRD analysis confirmed successful Ni incorporation and enhanced ZnO crystallinity, particularly in the presence of the SnO2 interlayer. AFM analysis revealed improved grain distribution and size due to the synergistic effects of Ni doping and the SnO2 interlayer. UV-Vis results indicated significant impacts on transparency and the Urbach energy, with Ni doping alone broadening the bandgap. PL measurements showed that the synergistic effects quenched UV luminescence associated with the glass substrate, enhancing visible luminescence. Chromaticity analysis suggested that ZSG and NZSG samples are suitable for warm blue region applications. Electrical measurements revealed n-type conductivity across all films except NZG, with Ni doping increasing resistivity. Additionally, the ZSG (PTC) sensor exhibited a slightly higher sensitivity (0.3852 Ω/°C) compared to the NZSG sensor (0.3782 Ω/°C), with a similar trend observed in NTC sensors. These findings suggest that Ni-doped ZnO films with SnO2 interlayers could potentially serve as thermistors and RTDs, offering promising applications in temperature sensing and optoelectronics.

Effect of substrate temperature on the performance of Sb2Se3 thin film solar cells fabricated by chemical-molecular beam deposition method

Antimony triselenide (Sb2Se3) stands as a promising candidate for photovoltaic (PV) applications due to its favorable material- and optoelectronic properties. However, the realization of further advancements in device efficiency is hindered by the substantial deficit in open-circuit voltage (VOC) attributed to the presence of multiple defect states and detrimental recombination losses.In this work, solar cells based on Sb2Se3 absorber layers deposited by chemical-molecular beam deposition method at substrate temperatures of 400 °C, 450 °C, and 500 °C. Due to the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray spectroscopy. The effect of substrate temperature on the morphology and electrical properties of Sb2Se3 thin-films were characterized by scanning electron microscopy and hot probe method. The PV performance of Mo/Sb2Se3/ZnCdS/CdS/ZnO/ITO/Au devices were investigated by current-voltage characteristics, and external quantum efficiency. The conductivity values tend to increase from 1.2 × 10–6 to 4.6 × 10–4 (Ω cm)-1 as the substrate temperature increased. Whereas, the trap-state density was determined between 7.3 × 1013 – 1.7 × 1014 cm-3 in the absorber layer by the space charge limited current method. Ultimatety, it has been shown that defect densities in Sb2Se3 films can be suppressed to some extent by optimizing the substrate temperature. Best solar cell performance of 5.36%, resulting from VOC of 476 mV, short-circuit current densit of 22.97 mA/cm−2, and fill factor of 49% at the substrate temperature of 450 °C.

Lewis Acid‐Mediated Synthesis of Thiazolo[3,2‐a] Hydrazone‐Based Organic Semiconducting Microwires

Organic semiconducting wires have captured broad attention in recent years due to its tremendous applications in various fields. The structural and chemical versatility, easy fabrication, tunable properties, and low cost have made their inevitable presence in electronics and optoelectronics. Herein, the synthesis and characteristic description of a new thiazolo[3,2‐a] hydrazone‐based organic semiconducting microwire synthesized by the Lewis acid‐based condensation reaction between methyl (Z)‐2‐(2‐(2‐methoxy‐2‐oxoethylidene)‐3‐oxo‐2,3‐dihydrothiazolo[3,2‐a]indol‐9‐yl)‐2‐oxoacetate and phenyl hydrazine under reflux conditions is reported. The optical, electrical, and semiconducting nature of the material is revealed from the specular reflectance study. When the Tauc plot analysis reveals a direct bandgap of 2.03 eV, the hot probe test suggests the nature of the majority of charge carriers as electrons, indicating the hydrazone as an organic semiconductor. The long wire‐like morphology with a high aspect ratio makes the molecule conceivable for advanced optoelectronic applications.

Hot probe technique for thin films Seebeck coefficient measurement

A new experimental method using a 50 μm diameter hand fabricated hot probe of Pt90/10Rh alloy is proposed as a tool to measure the Seebeck coefficient of thin films deposited onto electrically insulated substrates. A thermal model for heat transfer inside the probe and to the sample was developed to simulate the corresponding temperature distributions. Simulations showed that the ratio of the temperature rise in the contact point to the average temperature of the probe evolves basically independent on electrical current and film-substrate properties. Moreover, the values of contact radius and thermal contact resistance should not be necessary known, but only the pairs which are best fitting the probe thermal resistance in contact with the film-substrate. This brings a great simplification in respect with certain AFM based hot probe methods for which is necessary to determine these two parameters by calibration of the two substrates with known thermal conductivity. The values can be further used to evaluate the Seebeck coefficient of the sample with a macroscopic probe, within 1 % precision. By variance to the classical measuring methods, which resort to a heater-heat sink ensemble instrumented with thermocouples, heated metallic rods with built-in thermocouples or microfabricated structures, the proposed method is fast, reliable and of higher spatial resolution. The method was validated by measuring the Seebeck coefficient on CdS, Bi and Cr thin films reference samples, respectively.

Formulation and Characterization of Silibinin Entrapped Nano-Liquid Crystals for Activity against Aβ1-42 Neurotoxicity in In-Vivo Model.

Silibinin (SIL) Encapsulated Nanoliquid Crystalline (SIL-NLCs) particles were prepared to study neuroprotective effect against amyloid beta (Aβ1-42) neurotoxicity in Balb/c mice model. Theses NLCs were prepared through hot emulsification and probe sonication technique. The pharmacodynamics was investigatigated on Aβ1-42 intracerebroventricular (ICV) injected Balb/c mice. The particle size, zeta potential and drug loading were optimized to be 153 ± 2.5nm, -21mV, and 8.2%, respectively. Small angle X-ray (SAXS) and electron microscopy revealed to crystalline shape of SIL-NLCs. Thioflavin T (ThT) fluroscence and circular dichroism (CD) techniquewere employed to understand monomer inhibition effect of SIL-NLCs on Aβ1-4. In neurobehavioral studies, SIL-NLCs exhibited enhanced mitigation of memory impairment induced on by Aβ1-42 in T-maze and new object recognition test (NORT). Whereas biochemical and histopathological estimation of brain samples showed reduction in level of Aβ1-42 aggregate, acetylcholine esterase (ACHE) and reactive oxygen species (ROS). SIL-NLCs treated animal group showed higher protection against Aβ1-42 toxicity compared to free SIL and Donopezil (DPZ). Therefore SIL-NLCs promises great prospect in neurodegenerative diseases such as Alzheimer's disease.

Effect of Li Doping on Structural, Optical, and Optoelectrical Characteristics of ZnSnO3 Thin Films Prepared by Nebulizer Spray Pyrolysis

In this work, ZnSnO3 (ZTO3) and Li-doped ZTO3 thin films were synthesized on glass slides by a cost-effective nebulizer spray pyrolysis procedure. The X-ray diffraction analysis revealed that the ZTO3 and Li-doped ZTO3 thin films possessed a rhombohedral structure. The structural indices (grain size, dislocation density, lattice strain) of the ZTO3 and Li-doped ZTO3 thin films were computed. The morphology characteristics of the ZTO3 and Li-doped ZTO3 thin films were observed by field emission scanning electron microscopy. The inspected films display uniform and homogeneous surfaces. The optical transmittance, T, and reflectance, R, of the ZTO3 and Li-doped ZTO3 thin films were recorded using a double-beam spectrophotometer to investigate the optical characteristics of these layers. The refractive index of the ZTO3 and Li-doped ZTO3 thin films was enhanced via the Li content increase. Moreover, Tauc’s plots demonstrated that the energy gap of the ZTO3 and Li-doped ZTO3 thin films was reduced from 3.85 eV to 3.08 eV by boosting the Li doping content. Moreover, the increase in Li content produces an enhancement in the optoelectrical indices (optical resistivity, optical carrier concentration, optical mobility, plasms frequency, and optical conductivity) of the ZTO3 and Li-doped ZTO3 thin films. The nonlinear optical indices of the ZTO3 and Li-doped ZTO3 thin films were deduced, and it was noted that Li content boosted the nonlinear optical indices of these layers. All the ZTO3 and Li-doped ZTO3 thin films displayed n-type semiconducting properties by the hot probe equipment.

Ultrafast Surface Plasmon Probing of Interband and Intraband Hot Electron Excitations.

Upon the interaction of light with metals, nonthermal electrons are generated with intriguing transient behavior. Here, we present femtosecond hot electron probing in a noveloptical pump/plasmon probe scheme. With this, we probed ultrafast interband and intraband dynamics with 15 nm interface selectivity, observing a two-component-decay of hot electron populations. Results are in good agreement with a three-temperature model of the metal; thus, we could attribute the fast (∼100 fs) decay to the thermalization of hot electrons and the slow (picosecond) decay to electron-lattice thermalization. Moreover, we could modulate the transmission of our plasmonic channel with ∼40% depth, hinting at the possibility of ultrafast information processing applications with plasmonic signals.

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method

Nickel (Ni+2) doped nanocrystalline Bi2S3 thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi2S3 thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10-2 Ω-1 m-1 . The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.

Synthesis, structural, optical and electrical properties of CuxSbySz powders

The family of chalcogenides appears as promising candidates to act as absorbers in alternative solar cells in order to reduce the dependence on fossil fuels. The five absorber materials, CuSbS2, Cu3SbS3, Cu3SbS4, Cu12Sb4S13 and Cu14Sb4S13, were synthesized by the direct fusion of the elements inside evacuated quartz tubes. The resulting ingots were characterized electrically by the hot probe method and by direct resistance measurement. These ingots were then ground in order to obtain very fine powders. Also their pellets were characterized by X-Ray Diffraction, Raman spectroscopy, optical and electrical analysis. The X-Ray diffraction and Raman spectroscopy results confirmed the material's purity. Their band gap energies were determined by the Kubelka-Munk model, and found to be ranging between 1.24 and 1.47 eV. The five materials have P-type conductivities.

Where Are the Trade-Offs in Multiple Ecosystem Services in the Process of Ecological Restoration? A Case Study on the Vegetation Restoration Area in the Loess Plateau, Northern Shaanxi

Revealing trade-off and synergistic relationships among ecosystem services plays a key role in ensuring a stable ecosystem for long-term development. It is the crucial precondition for realizing watershed protection and high-quality development. The variations in land use during 1990–2020 are investigated by taking the typical areas for returning farmland to forests as an example. The spatiotemporal distributions of six key ecosystem services, namely carbon storage, water yield, net primary productivity (NPP), soil conservation, habitat quality, and forest recreation are quantified by the InVEST model and statistical data. We also uncover the spatial difference in the ecosystem in Loess Plateau, located in northern Shaanxi, with hot spot analysis and probe the trade-off and synergistic correlations among the investigated ecosystem services. The results show that: (1) the farmland decreased dramatically. On the contrary, the forests and orchards increased significantly. (2) During the same period, carbon storage and habitat quality increased, and water yield, NPP, soil conservation, and forest recreation initially declined, but subsequently rose to higher values than that in 1990. All these services in the southeastern part of the research area surpass those found in the northwest. (3) The ecosystem services relationships in northern Shaanxi are mainly characterized by synergistic correlations, which became stronger from 1990 to 2020. The trade-off effects mainly occur among the water yield and other ecosystem services and are distributed in the west and north of the investigated area. Based on these findings, this work provides scientific principles for improving the ecological environment and enhancing the resource sustainability of the study area.

Effects of Solution pH on Chemical Bath Deposited Iron-Sulfide-Oxide with Tartaric Acid Presence

A chemical bath deposition (CBD) contained sodium thiosulfate (Na2S2O3), iron (II) sulfate heptahydrate (FeSO4.7H2O), and L(+)-tartaric acid (C4H6O6) as the complexing agent has been used to deposit the iron-sulfide-oxide (FeSxOy) films. The effects of different solution pH (5.0-9.0) on film properties were investigated. The thicknesses of the film analysed from the cross-sectional images of Scanning Electron Microscopy (SEM) showed the thickness of the film is increasing with increasing pH. The X-Ray Diffraction (XRD) pattern and the hot probe method revealed that all the deposited films are crystalline, and possess n-type semiconductor behaviour due to high oxygen content (around 72-82%). Larger crystallite sizes with extra peaks of goethite and hematite were present for the films with pH > 7.0, while, better film uniformity and grains distribution, as well as clear absorption edge in transmittance measurement, were obtained for the film with pH 5.0.

Plasma potential measurements using an emissive probe made of oxide cathode

A novel emissive probe consisting of an oxide cathode coating is developed to achieve a low operating temperature and long service life. The properties of the novel emissive probe are investigated in detail, in comparison with a traditional tungsten emissive probe, including the operating temperature, the electron emission capability and the plasma potential measurement. Studies of the operating temperature and electron emission capability show that the tungsten emissive probe usually works at a temperature of 1800 K–2200 K while the oxide cathode emissive probe can function at about 1200 K–1400 K. In addition, plasma potential measurements using the oxide cathode emissive probe with different techniques have been accomplished in microwave electron cyclotron resonance plasmas with different discharge powers. It is found that a reliable plasma potential can be obtained using the improved inflection point method and the hot probe with zero emission limit method, while the floating point method is invalid for the oxide cathode emissive probe.

Synthesis, Structural, Optical and Optoelectrical Properties of the Chemically Deposited Cu2BaGeS4 Thin Films

In this work, thin films of copper barium germanium sulfide (Cu2BaGeS4) were generated via the chemical bath deposition technique. The X-ray diffractometer identified the Cu2BaGeS4 layers’ crystal structure. It showed that the Cu2BaGeS4 films have a hexagonal structure. The EDAX results demonstrated stoichiometric composition, which validated the composition of the Cu2BaGeS4 layers. However, the Cu2BaGeS4 sheets under investigation showed a direct energy gap, as demonstrated by the linear optical analysis, with the E g falling from 1.61 to 1.42 eV as the sample thickness rose from 239 to 463 nm. As the film thickness increased, the refractive index and Urbach energy values improved as well. Additionally, the examined Cu2BaGeS4 sheets’ optoelectrical indices, including optical dielectric constants, electrical conductivity, optical mobility, and optical conductivity, improved with thickness. This work shows that increasing the layer thickness enhanced the magnitudes of the nonlinear optical index of the novel Cu2BaGeS4 sheets. Cu2BaGeS4 layers tended to acquire p-type properties, as demonstrated by the hot probe test.

189 The Effects of Dose Timing / Intervals on Grow-Finish Performance, Carcass Characteristics, Carcass Cutting Yields, and Meat Quality of Market Gilts Managed with Improvest

Abstract Improvest (Zoetis Canada Inc.) immunization provides temporary suppression of ovarian function and estrus in market gilts. The product requires two sequential injections administered at least 4 weeks apart, with full suppression of ovarian function demonstrated 4 to 10 weeks after the second injection. Recent research has shown the importance of closely monitoring the durations between the injections and between the second injection and slaughter. The objective was to determine the effects of dose timing and interval on grow-finish performance, carcass cutting yields, and meat quality of market gilts managed with Improvest when days on feed remained constant. The study consisted of 1,056 market gilts (average starting body weight of 31.7 kg) in 48 pens (22 pigs/pen) with experimental treatments arranged as a 2 × 2 factorial design with main effects of interval between the first and second Improvest injection (D1-D2; 4-week interval or 6-week interval) and time between the second Improvest injection and slaughter [D2-slaughter; weighted average of 34 to 35 days post-second injection (SHORT) or weighted average of 48 to 49 days post-second injection (LONG)]. Pigs were marketed using a similar strategy where the heaviest 3 to 5 pigs from each pen were marketed during study week 12, the next heaviest 3 to 5 pigs from each pen were marketed during study week 14, and the remaining pigs in the pen were marketed during study week 15. Hot carcass weight and optical probe readings (Destron PG-203; Anitech Identification System Inc.) were collected during slaughter. Following slaughter, 288 carcasses (24/treatment for each marketing event; pigs near the population average) were selected for evaluation of carcass cutting yields and meat quality. Data were analyzed with PROC MIXED of SAS, with pen serving as the experimental unit. There were limited interactions between D1-D2 and D2-slaughter, with nonsignificant interactions (P ≥ 0.07) for average daily feed intake (ADFI), average daily gain (ADG), and feed:gain (F:G) ratio during the grow-finish period, hot carcass weight, backfat thickness, or carcass primal weights. Overall, this study illustrated the trade-offs associated with altering the duration of time between D2-slaughter. From a live production standpoint, there were significant differences (P < 0.01) for D2-slaughter for ADFI and F:G ratio, with SHORT having reduced ADFI (2.47 kg versus 2.53 kg) and more efficient F:G (2.69 versus 2.74) compared with LONG (Table 1). From a meat processing standpoint, there were meaningful differences observed in fat deposition for D2-slaughter. In terms of fat quantity, backfat thickness and belly primal weight were affected (P < 0.01) by D2-slaughter (LONG had 0.78 mm greater backfat thickness and 0.15 kg heavier trimmed bellies). In terms of fat quality, iodine value and belly firmness were affected (P < 0.01) by D2-slaughter (LONG had 1.30 units lower iodine value and superior belly flop scores).

N-type CdTe:In for photovoltaics: in situ doping, type verification and compensation effects

We explored the in-situ doping of cadmium telluride thin films with indium to produce n-type absorbers as an alternative to the near-universal choice of p-type for photovoltaic devices. The films were grown by close space sublimation from melt-synthesised feedstock. Transfer of the indium during film growth was limited to 0.0014%–0.014%—unless reducing conditions were used which yielded 14%–28% efficient transport. While chunks of bulk feedstock were verified as n-type by the hot probe method, carrier type of thin film material was only able to be verified by using hard x-ray photoelectron spectroscopy to determine the Fermi level position within the band gap. The assignment of n-type conductivity was consistent with the rectification behaviour of a p-InP/CdTe:In junction. However, chloride treatment had the effect of compensating n-CdTe:In to near-intrinsic levels. Without chloride, the highest dopant activation was 20% of the chemical concentration of indium, this being for a film having a carrier concentration of n = 2 × 1015 cm−3. However, the activation was often much lower, and compensation due to over-doping with indium and native defects (stoichiometry) are discussed. Results from preliminary bifacial devices comprising Au/P3HT/ZnTe/CdTe:In/CdS/FTO/glass are presented.

Quantitative Measurement of Thermal Conductivity by SThM Technique: Measurements, Calibration Protocols and Uncertainty Evaluation.

Thermal management is a key issue for the downsizing of electronic components in order to optimise their performance. These devices incorporate more and more nanostructured materials, such as thin films or nanowires, requiring measurement techniques suitable to characterise thermal properties at the nanoscale, such as Scanning Thermal Microscopy (SThM). In active mode, a hot thermoresistive probe scans the sample surface, and its electrical resistance R changes as a function of heat transfers between the probe and sample. This paper presents the measurement and calibration protocols developed to perform quantitative and traceable measurements of thermal conductivity k using the SThM technique, provided that the heat transfer conditions between calibration and measurement are identical, i.e., diffusive thermal regime for this study. Calibration samples with a known k measured at the macroscale are used to establish the calibration curve linking the variation of R to k. A complete assessment of uncertainty (influencing factors and computational techniques) is detailed for both the calibration parameters and the estimated k value. Outcome analysis shows that quantitative measurements of thermal conductivity with SThM (with an uncertainty value of 10%) are limited to materials with low thermal conductivity (k<10Wm-1K-1).

Synthesis and characterization of peculiar (Sb0.2Sn0.8)0.5(Se0.9S0.1)0.5 crystal and its application as visible light photo-detector

To investigate the influence of Sb and S inclusion on SnSe characteristics, alloy engineering is carried out. The (Sb0.2Sn0.8)0.5(Se0.9S0.1)0.5 quaternary crystal was well synthesized via direct vapour transport (DVT) technique. The surface morphology, chemical composition, structural, optical, electrical, and photoconductive characteristics of the grown crystal were estimated using acceptable methodologies. The FE-SEM image revealed that the (Sb0.2Sn0.8)0.5(Se0.9S0.1)0.5 crystal has a flat surface, and the chemical composition was established using EDAX. X-ray diffraction (XRD) spectra further validated the orthorhombic structure of the crystal. Raman spectroscopy was employed to find different vibrational modes. The crystal exhibits a direct bandgap of 1.42 eV. The four-probe method and hot point probe method examination revealed the crystal to be an n-type semiconducting material. Additionally, an analysis of the pulsed photo response was carried out on the grown crystal, which was exposed to different wavelengths and white light at varying intensities, while subjected to a biasing voltage of 1 V, with an on/off period of 10 s. The results indicated that the device demonstrated rapid response to incident light, along with the presence of a trapping state, and favourable photodetection parameters, making it a viable material for a visible light photodetector.

Effect of thickness on structural, optical, and optoelectrical properties of sprayed CuInSnS4 thin films as a new absorber layer for solar cells

Thin CuInSnS4 films, CITS of different thicknesses have been synthesized by spray pyrolysis method for the first time. These films have been deposited on pre-cleaned soda-lime glass substrates. X-ray diffraction, XRD, energy dispersive X-ray analysis, EDX, and field-emission-scanning electron microscope techniques have been utilized to characterize these CITS films. XRD-studies affirmed the polycrystalline nature of films, in addition EDX-analysis of films proves that they are stoichiometric films. Spectrophotometric studies indicate that the optical bandgap energy of films decreased from 1.88eV to 1.63eV and arose from direct allowed transitions; on contrary, the Urbach energy increases from 58 meV to 73 meV as film thickness increases. Increasing the thickness also leads to increase the absorption coefficient, extinction coefficient, and refractive index of films. Dielectric constants, and optical and electrical conductivities, along with the dispersion energies have been estimated and discussed. The dispersion energy increased (13.29eV–16.76eV), while the oscillator energy decraeses (2.98eV–2.53eV). Some linear and nonlinear optical parameters of films have been also investigated. Hot probe procedure was employed to check the semiconductor type of CuInSnS4 layers, which reveals that films have p-type conductivity. Obtained findings demonstrate that CuInSnS4 layers can be utilized as a new absorber layer for solar cells.

Facile synthesis, structural, optical and optoelectrical characterizations of promising novel InSbS3 thin films for photovoltaic applications

This work aims to prepare InSbS3 thin films using the spray pyrolysis procedure at various thicknesses t = 192, 265, 341, and 448 nm. The formation of the InSbS3 films was confirmed by the X-ray diffraction measurements that displayed orthorhombic structure of the InSbS3 films. On the other hand, Williamson-Hall (W–H) relation were used to assess the structural parameters for the spray deposited InSbS3 films. This method depicts the enhancement in the average grain size of the InSbS3 layers caused by growing the film thickness. On the other hand, the Tauc's relationship was applied to derive the direct energy gap of the as deposited and annealed InSbS3 films which reduced from 1.79 to 1.46 eV by raising the film thickness. Further, the optical dielectric constants of the novel InSbS3 films were boosted as the film thickness. Moreover, by extending the film thickness, we note an enhancement in the non-linear optical parameters χ(1) , χ(3) and n2 of the InSbS3 films. Moreover, the electrical conductivity of spray deposited InSbS3 films has been improved by increasing the film thickness. The hot probe procedure indicated that the spray deposited InSbS3 films are p-type semiconductors. The electrical results show that as the film thickness increases, the activation energy of the InSbS3 films decreases and the pre-exponential factor values are enlarged.