Hot Filament Chemical Vapor Deposition Research Articles

Pulsed Electro Decoration of Carbon Nanotubes with FexZn1−xS

A wide ranging scientific interest in developing new and simple preparation methods for highly catalytic bimetallic sulfides provided our motivation to explore the possibility of using the pulsed electrodeposition technique for the decoration of a carbon nanotubes forest. The carbon nanotubes were obtained using the hot-filament chemical vapor deposition technique. A non-thermal plasma treatment enabled the controlled creation of defects on the carbon nanotubes’ surface. These defects served as anchoring sites for the subsequent deposition of Fe and Zn nanoparticles using the pulsed electrodeposition technique. Our findings showed that only in the case of Fe deposition prior to Zn provided the formation of FeZn bimetallic-based nanoparticles, with Zn present mainly on the outer surface of the Fe core. To induce sulfurization, a thermal treatment in sulfur vapor was conducted at 500 °C, and the obtained heterostructure consisted of Fe0.3Zn0.7S as the main phase, with the minor presence of ZnS and S residues, which was deduced from the XRD results. This study provides thorough imaging of the process, presenting for each preparation step SEM/HR-TEM findings, coupled with EDS chemical analyses. The samples were tested for photocatalytic degradation of methyl blue dye to demonstrate the photoactive behavior of the heterostructure.

Hydrogenated graphene systems: A novel growth and hydrogenation process

Octadecylphosphonic acid self-assembled monolayers were used as a combined carbon and hydrogen source to grow graphene films on sapphire substrates via hot filament chemical vapor deposition. The functionalized substrates were sealed with a thin Cu film and heated to 950°C under Ar flow. After synthesis, the Cu was etched away. The graphene samples then underwent a hydrogenation treatment in the same reactor setup, exposed to a CH4/H2 gas mixture at 820°C for 2 hours. The structure and properties of the graphene films before and after hydrogenation were characterized. Raman spectroscopy was employed to probe the defect-related bands and C-H bonding. X-ray diffraction provided insights into the crystalline structure and interlayer spacing. The ferromagnetic response was measured using a PPMS system across a range of temperatures and magnetic fields. XPS was used to assess the chemical composition and bonding. This multi-step process enabled a detailed evaluation of the novel synthesis protocol and its effects on the resulting hydrogenated graphene material.

Corrosion resistance of diamond films with different grain sizes

Titanium alloys are widely used in the aerospace industry due to their excellent comprehensive properties. However, as the application becomes more and more extensive, higher requirements are put forward for the corrosion resistance of titanium alloys. Due to its natural chemical stability, diamond has become a good corrosion-resistant material. Diamond films with three different grain sizes were prepared on the surface of titanium alloy by hot-filament chemical vapor deposition (HFCVD). The protective efficiency of the three kinds of films to the substrate is above 90 %. The corrosion resistance of the nanocrystalline diamond (NCD) films is obviously better than that of the microcrystalline diamond (MCD) films. For NCD films, as the diamond grain size decreases, a cluster structure of particle stacking is formed, which hinders the arrival of corrosive substances to the substrate and further improves the corrosion resistance.

Multimethod cross-sectional characterization approaching the limits of diamond monophase multilayers

Chemical vapour deposited diamond draws significant scientific interest due to its wide range of mechanical and functional properties, which can be easily tuned by the applied deposition conditions. Here, hot filament chemical vapour deposition was used to synthesize four monophase multilayer diamond thin films with individual layer thickness down to ~300 nm. Extensive structural characterization by scanning electron microscopy and Raman spectroscopy on the cross-section confirmed the different diamond morphologies originating from the different applied process parameters of the individual sublayers, where Raman spectroscopy could give a clear distinction between nano- and microcrystalline diamond down to a layer thickness of ~1 μm. Cross-sectional X-ray nanodiffraction identified exclusively the diamond crystal structure throughout the cross-section of the multilayered diamond thin films. Cross-sectional phase and FWHM analysis allowed to discriminate between the diamond morphologies down to ~500 nm, thus identifying the limitations of monophase diamond multilayers. While the microcrystalline diamond sublayers all exhibit pronounced structural gradients expressed in (i) increasing intensity of the 111 Debye-Scherrer ring, (ii) ⟨110⟩ fibre texture, and periodic variations of (iii) grain size and (iv) residual stress, the nanocrystalline diamond sublayers showed no pronounced cross-sectional variations. In summary, the experimental results provide insights into the cross-sectional evolution of microstructure and residual stress and the limitations of monophase multilayered diamond thin films.

Nanostructured boron-doped diamond electrodes for two-electron water oxidation to produce hydrogen peroxide

Boron-doped diamond (BDD) electrodes have been widely used in water treatment, e.g., degradation of antibiotics and pigments for water purification. Hydrogen peroxide production by two-electron electrochemical oxidation of water is a green and attractive method that has the potential to replace the conventional anthraquinone autoxidation (AO) process. In this study, BDD films were prepared on single-crystal silicon wafers by using hot-filament chemical vapor deposition (HFCVD) technique. Then, dense tubular nanostructure (nanotubes) arrays were prepared on the BDD films employing inductively coupled plasma (ICP) etching. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) proved the formation of oxygen-terminated nanostructures, which was ascribed to the oxygen plasma and the self-masking. The length of diamond nanotubes as well as the root diameter increased gradually and non-linearly with the increase of etching time. It was indicated by cyclic voltammetry (CV) analysis that the effective active area of the electrodes increased after etching, and variations of resulting reaction performance were observed. The oxygen-terminated and nanostructured BDD electrode obtained by etching with the optimized parameters features better electrocatalytic performance, with reduced oxidation potential and 46.8 % higher Faraday Efficiency (FE) for hydrogen peroxide production, compared to the original BDD sample. Therefore, the manufacturing of nanostructures is an effective method to improve the efficiency of BDD water oxidation for the production of hydrogen peroxide.

Fabrication of diamond film under low methane concentration by hot filament chemical vapor deposition with magnetic field assistance

This study focused on improving diamond film growth through hot filament chemical vapor deposition (HFCVD) with an innovative method, magnetic field assistance. The effects on diamond films were thoroughly investigated using a combination of experiments and simulations. The results of scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD) all showed significant improvements in nucleation rates, film thickness, and grain size, particularly for grains with (111) orientation, when exposed to a 400 mT magnetic field during HFCVD compared to non-magnetic conditions. Magnetic field application in HFCVD was found to promote the formation of larger diamond grains and increase the film growth rate by nearly 45 %. Concurrent Finite Element Method simulations confirmed that the magnetic field improved reactive gas flow and temperature distribution across the substrate, which was consistent with experimental results. These findings suggest that magnetic field assistance in HFCVD may mitigate the limitations of bias assistance, such as the antenna effect, overheating, and stress imbalance. This approach is especially useful for substrates with complex geometries, such as the sharp edges of cutting tools, as it promotes even film growth.

Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition

Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition

Fabrication of Tungsten Oxide Nanowalls through HFCVD for Improved Electrochemical Detection of Methylamine.

In this study, well-defined tungsten oxide (WO3) nanowall (NW) thin films were synthesized via a controlled hot filament chemical vapor deposition (HFCVD) technique and applied for electrochemical detection of methylamine toxic substances. Herein, for the thin-film growth by HFCVD, the temperature of tungsten (W) wire was held constant at ~1450 °C and gasification was performed by heating of W wire using varied substrate temperatures ranging from 350 °C to 450 °C. At an optimized growth temperature of 400 °C, well-defined and extremely dense WO3 nanowall-like structures were developed on a Si substrate. Structural, crystallographic, and compositional characterizations confirmed that the deposited WO3 thin films possessed monoclinic crystal structures of high crystal quality. For electrochemical sensing applications, WO3 NW thin film was used as an electrode, and cyclic voltammetry (CV) and linear sweep voltammetry (LSV) were measured with a wide concentration range of 20 μM~1 mM of methylamine. The fabricated electrochemical sensor achieved a sensitivity of ~183.65 μA mM-1 cm-2, a limit of detection (LOD) of ~20 μM and a quick response time of 10 s. Thus, the fabricated electrochemical sensor exhibited promising detection of methylamine with considerable stability and reproducibility.

Effect of Mesoporous Silica as a Solid Precursor on the Properties of Silicon Oxycarbide Thin Films via Hot Filament Chemical Vapor Deposition

AbstractThis study investigates the impact of mesoporous silica tablets on the synthesis and properties of silicon oxycarbide thin films produced via Hot Filament Chemical Vapor Deposition. Results reveal significant variations in composition and cluster morphology, influenced by the introduction of mesoporous silica tablets. The study demonstrates controlled deposition, consistent synthesis, and the substantial impact of mesoporous silica tablets on the composition, structure, and optical properties of thin films. These findings offer new possibilities for tailor design applications in electronics, optics, and sensors.

Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface Diamond(111)//TaC(111) is observed using high resolution transmission electron microscopy, and then we explore the effects of the TaC with different lattice planes on the diamond formation by first-principle calculations. The results show that C tends to adsorb on the TaC(111) C-terminated surface. The strong covalent bond between C from diamond and Ta from TaC is formed in the Diamond(111)//TaC(111) interface, while only C–C covalent bonds are formed at the Graphite(002)/TaC(111). This makes diamond thermodynamically more stable than graphite on the TaC surfaces. Our investigations provide critical information to understand the complex diamond formation mechanism, especially with the presence of TaC.

An investigation into low-temperature HFCVD and derivative techniques for the enhancement of diamond-coated cemented carbide tool performance

The performance of diamond-coated cemented carbide tools manufactured via the conventional hot filament chemical vapor deposition (HFCVD) technique exhibits certain limitations, including issues with poor toughness and reduced adhesive strength of film-substrate systems, primarily attributed to the cobalt diffusion at elevated temperatures (> 800 °C). In this study, a pioneering exploration of a low-temperature diamond film deposition technique on cemented carbide is developed, and a comprehensive evaluation of the film properties is conducted. The results indicate that owing to constraints related to growth rate and diamond film purity, it may not serve as an effective approach for enhancing the performance of conventional coated tools. Nonetheless, the inherent capability of this technique in inhibiting cobalt diffusion is strategically harnessed to pioneer the development of a derivative technique referred to as the “low-temperature to high-temperature HFCVD (LT-HT-HFCVD)”. This innovative method leverages a low-temperature deposited diamond layer as an intermediate layer to impede cobalt diffusion while serving as a densely nucleated layer for subsequent diamond growth. Subsequently, the conventional technique is employed to facilitate an effective growth rate and maintain high growth purity. The diamond-coated tools generated by this technique are subject to a comprehensive comparative analysis against those generated by low-temperature HFCVD (LT-HFCVD) and conventional HFCVD (CT-HFCVD) techniques. The results reveal that tools fabricated using the LT-HT-HFCVD combine the advantages inherent to both the LT-HFCVD and CT-HFCVD techniques, thereby manifesting superior toughness, enhanced film-substrate adhesive strength, and outstanding cutting performance.

Optimization of Graphene Layers Grown on Pt/Ti/SiO2 by Hot Filament Chemical Vapor Deposition

AbstractLarge area single and bilayer graphene are grown on Pt/Ti/SiO2 substrates by hot filament chemical vapor deposition (HFCVD) with and without the assistance of Cu foil. The quality and number of graphene layers deposited on the substrate are assessed by Raman Spectroscopy. Atomic Force Microscopy (AFM) is used for assessing the surface topography of the graphene films grown on the Pt/Ti/SiO2 substrates. The microstructure and elemental analyses are performed by Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The results show that bilayer graphene growth is facilitated by a copper foil placed nearby Pt/Ti/SiO2 substrate and by a high filament temperature in the HFCVD reactor. Monolayer graphene grows only when no copper foil is placed near the Pt/Ti/SiO2 substrate at a low filament temperature. The approach paves a novel pathway towards the layer‐controlled growth of graphene on Pt/Ti/SiO2 substrates by HFCVD for frontier applications.

Enhancing Interfacial Capacitance by Boron Doping in Vertically Porous Carbon Toward High-Performance AC Filtering Electrochemical Capacitors.

Electrochemical capacitors (ECs) show great perspective in alternate current (AC)filtering once they simultaneously reach ultra-fast response and high capacitance density. Nevertheless, the structure-design criteria of the two key properties are often mutually incompatible in electrode construction. Herein, it is proposed that combining vertically oriented porous carbon with enhanced interfacial capacitance (Ci ) can efficiently solve this issue. Theoretically, the density function theory calculation shows that the Ci of a carbon electrode can be enhanced by boron doping due to the corresponding compact induced charge layer. Experimentally, the vertical-oriented boron-doped graphene nanowalls (BGNWs) electrodes, whose Ci is enhanced from 4.20 to 10.16µFcm-2 upon boron doping, are prepared on a large scale (480 cm2 ) using a hot-filament chemical vapor deposition technique (HFCVD). Owing to the high Ci and vertically oriented porous structure, BGNWs-based EC has a high capacitance density of 996µFcm-2 with a phase angle of - 79.4° at 120Hz in aqueous electrolyte and a high energy density of 1953µFV2 cm-2 in organic electrolyte. As a result, the EC is capable of smoothing 120Hz ripples for 60Hz AC filtering. These results provide enlightening insights on designing high-performance ECs for high-frequency applications.

Micromechanical properties of micro- and nanocrystalline CVD diamond thin films with gradient microstructures and stresses

Chemical vapor deposition produced diamonds attract considerable scientific and industrial interest due to their exceptional mechanical and functional properties. Here, hot filament (HF) chemical vapor deposition was used to synthesize two diamond thin films with different cross-sectional microstructure and residual stresses. Structural characterization by scanning electron microscopy, Raman spectroscopy, and cross-sectional synchrotron x-ray nanodiffraction revealed different diamond morphologies. While the microcrystalline diamond film exhibits pronounced microstructural gradients expressed by gradually increasing (i) intensities of the 111 Debye-Scherrer rings, (ii) ⟨110⟩ fiber texture sharpness, (iii) grain size, and (iv) slightly oscillating residual stress at the level of −0.5 GPa, the nanocrystalline diamond film showed no pronounced cross-sectional variation of microstructure above the nucleation zone of ∼0.5 μm and a steady stress level of 0.25 GPa. In situ micromechanical cantilever bending tests revealed highly different mechanical properties of the two films. In detail, Young's modulus of 830 ± 53 and 459 ± 53 GPa, fracture stress of 12.4 ± 0.8 and 7.8 ± 1.0 GPa, and fracture toughness values of 6.9 ± 0.4 and 3.6 ± 0.3 MPa⋅m½ were evaluated for the micro- and nanocrystalline diamond films, respectively. In summary, this study provides valuable insights into the microstructure-residual stress correlation in micro- and nanocrystalline diamond films, especially illuminating their influence on micromechanical properties.

Crystal orientation control of HFCVD diamond spherical film tools and tribological behavior on steel

(111)-oriented micron-crystalline diamond (111MCD), (110)-oriented micron-crystalline diamond (110MCD) and (110)-oriented nano-crystalline diamond (110NCD) spherical films were prepared on the surface of spherical WC-Co polishing tools by hot filament chemical vapor deposition technology. The microstructure, molecular structure, crystal orientation and surface roughness of spherical films were characterized by SEM, XRD, EBSD and White-light interferometer. The friction performance and material removal mechanisms were studied by friction experiments on steel. The results showed that both crystal orientation and grain size variation significantly influenced the tool properties. The roughness and friction coefficient of 111MCD, 110MCD, and 110NCD films decreased successively. During the friction process, the transformation of diamond to graphite reduced the friction coefficient but accelerated film delamination. 111MCD has the fastest material removal rate, but the graphitization rate and wear rate of the film are the highest, and there are a lot of abrasive chips in the friction interface. Diamond of (110) orientation can improve the wear resistance of the film and reduce the abrasive wear of the workpiece. Compared to 111MCD, 110NCD exhibited a 29.3 % reduction in friction coefficient, a 90 % improvement in wear resistance, a 49.4 % increase in surface smoothness of the processed workpiece, and the highest ID/IG value of 1.45 after film wear, demonstrating superior polishing performance and anti-graphitization properties. These results indicate that 110NCD tool is a highly efficient polishing tool with great potential.

Monitoring of Carbonated Hydroxyapatite Growth on Modified Polycrystalline CVD-Diamond Coatings on Titanium Substrates

Production of diamond coatings on titanium substrates has demonstrated as a promising strategy for applications ranging from biosensing to hard tissue engineering. The present study focuses on monitoring the nucleation and growth of bone-like carbonated-hydroxyapatite (C-HA) on polycrystalline diamond (PCD) synthetized on titanium substrate by means of a hot filament chemical vapor deposition (HF-CVD) method. The surface terminations of diamond coatings were selectively modified by oxidative treatments. The process of the C-HA deposition, accomplished by precipitation from simulated body fluid (SBF), was monitored from 3 to 20 days by Raman spectroscopy analysis. The coupling of morphological and structural investigations suggests that the modulation of the PCD surface chemistry enhances the bioactivity of the produced materials, allowing for the formation of continuous C-HA coatings with needle-like texture and chemical composition typical of those of the bone mineral. Specifically, after 20 days of immersion in SBF the calculated carbonate weight percent and the Ca/P ratio are 5.5% and 2.1, respectively. Based on these results, this study brings a novelty in tailoring the CVD-diamond properties for advanced biomedical and technological applications.

Effects of methane concentration on tribological properties of diamond films prepared on different ceramic substrates

ABSTARCT Diamond films were prepared on silicon nitride and zirconia ceramic substrates using hot filament chemical vapor deposition (HFCVD). The surface morphology, friction, and wear properties of the diamond films prepared with different methane concentrations (2%, 4%, and 6%) were compared using scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and friction and wear testing machines. The results showed that, with an increase in the methane concentration, the diamond particles gradually changed from micro- to nanodiamonds, and the grain size first increased and then decreased. The diamond films on silicon nitride substrates were of excellent quality, with good wear resistance, strong adhesion, and wear rates of 2.857 × 10−8 mm−3•m−1•N−1, 5.151 × 10−8 mm−3•m−1•N−1, and 1.334 × 10−7 mm−3•m−1•N−1, respectively. The diamond films on zirconia substrates had more impurities on the surface, higher internal stress, poorer wear resistance, and weaker adhesion, with wear rates of 3.789 × 10−8 mm−3•m−1•N−1, 5.899 × 10−8 mm−3•m−1•N−1, and 2.074 × 10−7 mm−3•m−1•N−1, respectively. Hence, the deposition of diamond films on ceramic substrates significantly reduced the friction coefficient, and the performance of diamond films on silicon nitride substrates was excellent.

SIMULATION AND EXPERIMENTAL RESEARCH STUDIES ON TEMPERATURE FIELD FOR THE PRODUCTION OF DIAMOND-COATED MILLING TOOLS BY HFCVD DEVICE WITH SEPARATED WORKTABLES

Diamond-coated tools have extremely extraordinary physical and chemical properties and have become ideal tools for machining the emerging materials that are hard to machine. In mass production of diamond-coated milling tools, the homogeneity of diamond coatings has always been sought for and is highly influenced by the uniformity of temperature field near the tool substrate. In order to further improve the uniformity of the temperature field and deposit diamond coatings with uniform thickness, a novel hot filament chemical vapor deposition (HFCVD) device with separated worktables and plates for mass production of diamond-coated milling tools is proposed. First, the simulation models of previous device with integrated worktable versus new device with separated worktables are established using finite volume method. The simulation results shows that the temperature distribution is more uniform in the device with separated worktables. Second, temperature measurement experiments are conducted, which prove the correctness of simulation model. Subsequently, experiments involving the deposition of diamond coatings on milling tools are conducted using two kinds of worktables, utilizing the same parameters as in the simulation. Finally, high-speed milling experiments are conducted to test the diamond-coated milling tools. According to the results of SEM, Raman and high-speed milling experiments, it can be concluded that the homogeneity of coating thickness and cutting performance of the milling tools produced by HFCVD device with separated worktables and plates are better.

Preparation of nanodiamonds based on phase transformation of vertical sheet under atmospheric pressure

A basic and important way to prepare diamond is to make graphite experience the phase transformation under the high-pressure high-temperature (HPHT) condition. However, this method needs stringent equipment and high investment cost. Recently, we proposed a method to prepare the diamond by phase transformation of graphite at atmospheric pressure with monodispersed Ta atoms. It is found that a phase transformation happens to H atoms under atmospheric pressure, but the role of O atoms has not been investigated. Here, we use tantalum wires as Ta source and heat the filaments to prepare vertical graphene containing Ta atoms in hot filament chemical vapor deposition (HFCVD) system. And then the vertical graphene layers are annealed in oxygen-containing environment, and nanodiamonds are obtained by phase transformation from the vertical graphene under atmospheric pressure. The results show that the sample morphologies are the same as the untreated vertical graphene’s, when the annealed ambient air pressure is at 10 Pa and 50 Pa with oxygen atom content of 1.96% and 2.04%, respectively; TEM tests reveal TaC and graphite but no diamond in these samples . Nanodiamond grains with the size range of 2–4 nm are observed in the amorphous carbon region of samples annealed at 100 Pa and 500 Pa air pressure with oxygen atom content increasing to 2.77% and 3.11%, respectively, indicating that oxidation facilitates the phase change from Ta-containing vertical graphene to diamond at atmospheric pressure. When the air pressure of the annealing environment rises to 1000 Pa with the oxygen atom content of 3.54%, the sample is extensively oxidized and the graphite structure is severely damaged,which means that a large number of oxygen atoms tend to disrupt the graphite structure rather than promote the phase change into diamond. These results supply a way to prepare nanodiamond and show the effect of O atoms in the graphite phase transition at atmospheric pressure.

(Invited) Heterogeneous Integration of Ultrawide Bandgap III-Nitrides and Diamond

Industry demands for power switching, amplification and photonic applications are continually pushing the limits of semiconductor device technologies leading to increasing applied voltages and, thus, higher electric fields while simultaneously requiring reduction in the size, weight and power consumption. In addition, recent heightened interest in higher temperature (and other extreme environment) applications, while simultaneously maintaining high-voltage and high-power performance, has inexorably led to ultrawide bandgap (UWBG) semiconductor materials. This interest in UWBG materials stems from superior properties that include high material hardness, breakdown strength to withstand large electric fields and mitigation of power dissipation during device switching, deliver high current density while operating at higher junction and ambient temperature. Among these materials are boron nitride in its hexagonal and cubic phases, gallium oxide, diamond, and aluminum gallium nitride. The versatile alloys of wurtzite AlxGa1-xN have long been demonstrated across the full composition range. The variation in Eg with AlGaN composition, along with select WBG and UWBG materials, is shown in Figure 1 versus (in-plane for non-cubic) lattice constant.Premier WBG materials to date for electronics and photonics are SiC (Eg = 3.3 eV) and GaN (Eg = 3.4 eV). The latter has been successfully applied to high-power transistors and near ultraviolet photonics. In both electronics and photonics applications, the polarization fields of the wurtzite crystal structure, generally grown along (0001) direction, produce design challenges. In photonics, for example, the fields and band alignment couple to spatially separate electrically injected electrons and holes to reduce wavefunction overlap in quantum wells. In electronics, the internal fields have contributed to difficulties in the design of logic and bipolar transistor devices based on these materials. Despite this, the inherent polarization field and band offsets were successfully employed in the design of high electron-mobility transistors (HEMTs). The inherent AlGaN/GaN HEMT band offset produces a high electron concentration at the interface that spontaneously forms a two-dimensional electron gas (2DEG). Because charge flow in these devices is restricted to the 2DEG, current crowding results in intense self-heating. The local heating decreases electrical conductivity to produce a runaway scenario for elevating the Joule heating. Dissipating this heat, therefore, is the principal limiting factor in operating at power higher than 40 W/mm.The various temperature dependences of semiconductor device parameters are the principal drivers in the operation of semiconductor devices. The physics has inextricably led to UWBGs for future high temperature applications, > 300 °C, due to their lower intrinsic carrier density and thus the effects of leakage are orders of magnitudes less than Si-based devices. Furthermore, AlGaN and diamond offer superior high temperature mechanical stability due to their structural hardness and chemical inertness. Thermal management is essential for achieving higher power densities. Diamond is highly attractive for many applications due to its high hardness, transparency, chemical inertness, promising semiconductor properties, and its high thermal conductivity (κ) to 2500 W/m·K in natural material. Factors related to the consequences of self-heating in devices have motivated extensive research to improve the properties of diamond and produce better approaches to determine the thermal properties. Laboratory-grown diamond films exhibit significantly poorer κ than natural diamond and, when integrated with other electronic materials, a low thermal boundary conductance (TBC in W/m2·K) that inhibits heat transfer between materials. The former originates from the ubiquitous polycrystalline nature of chemical vapor deposition (CVD) diamond and the presence of non-diamond carbon (NDC) in the layer. The low TBC stems from fundamental barriers to phonon propagation between two materials and from practical issues of poor diamond quality in the initial growth regime. Continued research is needed to improve κ in the polycrystalline diamond and mitigate the negative impact of the initial diamond layer on TBC.The current status of hetero-integration of UWBG AlGaN and diamond will be reviewed. Particular emphasis is given to high Al content AlGaN for near-bandgap matching with diamond. Patterned diamond grown using hot-filament CVD to realize unique three-dimensional lateral device structures in a self-aligned, as-grown fabrication process is employed. Engineering the AlGaN-diamond bandgap alignment is noteworthy at the nonpolar AlGaN – diamond interface including diamond surface terminations that produce either negative or positive electron affinity. The review will focus on improvements in material properties, especially the interfaces, that are critical to both charge and heat transport for UWBG device structures. Figure 1