Hot Chemical Etching Research Articles

Effects of Hot Chemical Etching and 10-Metacryloxydecyl Dihydrogen Phosphate (MDP) Monomer on the Bond Strength of Zirconia Ceramics to Resin-Based Cements.

The purpose of this in vitro study was to evaluate the hot chemical etching method on the shear bond strength between zirconia and two resin cements. Sixty zirconia specimens (13 × 7.5 × 2.5 mm3 ) were prepared and treated as follows: (1) airborne-particle abrasion with 50 μm Al2 O3 particles; (2) hot chemical etching for 10 minutes; (3) hot chemical etching for 30 minutes. Sixty composite cylinders of 3 mm diameter and height were prepared and bonded to zirconia specimens, which were divided into subgroups A and B. Group A: cemented with conventional resin cement (Variolink II); group B: cemented with 10-metacryloxydecyl dihydrogen phosphate (MDP) monomer containing resin cement (Panavia SA) after the application of surface treatments. Next, the specimens were stored in 37ºC distilled water for 24 hours. Following water storage, shear bond strength test was performed at a 1 mm/min crosshead speed in a universal testing machine. The statistical analyses were performed with one-way ANOVA and post hoc Tukey tests. p < 0.05 was considered statistically significant. The results from all of the tested groups exhibited lower shear bond strength values than group II-B and higher shear bond strength values than group I-A (p < 0.05). The use of the hot chemical etching method for 10 minutes increased the shear bond strength of zirconia ceramics to both conventional and resin cements and seems to be an effective method. The MDP monomer-containing resin cement, Panavia SA, improved the resin bonding of zirconia ceramics when combined with airborne-particle abrasion.

Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking layer

Abstract GaN-based light-emitting diodes (LEDs) with an embedded air voids structure and a SiO2 current blocking layer (CBL) was fabricated and investigated. The air voids structure was formed between cone-shaped patterned sapphire substrate and GaN epitaxial layer by combining laser scribing with H3PO4-based hot chemical etching. The air voids embedded high power LED showed 8.9% higher light output power due to a strong light reflection and redirection at the interface between GaN and air voids, which could increase the top light extraction of the high power LED. Compared to the air voids embedded high power LED, the light output power of the high power LED by integrating air voids structure with SiO2 CBL was 9.1% higher than that of the air voids embedded LED without SiO2 CBL. It was also found that the simulation results agree well with the experimental results.

Air-voids embedded high efficiency InGaN-light emitting diode

To improve the light extraction efficiency of InGaN-light emitting diode (LED), inverted hexagonal cone shaped air voids with {10–11} GaN crystal planes were formed between a patterned sapphire substrate and GaN epitaxial layer using a H3PO4-based hot chemical etching method. The air-voids embedded LED showed 12% and 210% higher optical power than a patterned substrate LED and a flat substrate LED, respectively. A ray tracing simulation revealed that the light extraction through the top face of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.

Characterization of very low defect-density free-standing GaN Substrate Grown by Hydride-Vapor-Phase-Epitaxy.

ABSTRACTStructural, electrical and optical properties of free-standing 200-μm thick GaN films grown by hydride vapor phase epitaxy (HVPE) have been investigated. After laser lift-off, the GaN substrates were mechanically polished on both Ga and N-sides and dry etched only on the Ga- side to obtain a smooth epi-ready surface. Hot H3PO4 chemical etching on both surfaces was used to reveal the defect sites, which appeared as hexagonal pits. The etched surfaces were then examined by atomic force microscopy. A few seconds of etching was sufficient to smooth the N- face surface and produce etch pits with a density of ≈ 1×107 cm−2. In contrast, a 50 minute etching was needed to delineate the defect sites on the Ga-face which led to a density as low as 5×105 cm−2. From plan-view and cross-sectional transmission electron microscopy (TEM) analysis, we have estimated that the dislocation density is less than about 5×106 cm−2 and ≈ 3×107 cm−2 for the Ga and N-faces respectively. The full-width at half-maximum (FWHM) of the symmetric (0002) X-ray diffraction rocking curve was 69 and 160 arcsec for the Ga and N-faces, respectively. That for the asymmetric (10 4) peak was 103 and 140 arcsec for Ga and N-faces, respectively. Hall measurements demonstrated very high mobility (1100 and 6800 cm2/V.s at 295 and 50 K, respectively) and very low concentration of donors (2.1×1016 cm−3) and acceptors (4.9×1015 cm−3). In the photoluminescence (PL) spectrum taken at 10 K, a rich excitonic structure has been observed with the highest peak attributed to the exciton bound to neutral shallow donor (BDE). The FWHM of the BDE peak was about 1.0 meV on the Ga face before and after hot chemical etching, whereas that on the N-face decreased from about 20 to 1.0 meV after chemical etching owing to the removal of the surface damage originated from the mechanical polishing.