The single source precursor tris(N,N,N’,N’-tetramethylethylenediamine)Al(III)Cl3 has been synthesized by the reaction of N,N,N’,N’-tetramethylethylenediamine (TMEDA) with AlCl3 in 3:1 molar ratio in ethanol. The precursor is stable for long periods of time and cleanly generated aluminum nitride upon pyrolysis. The pyrolysis process was optimized by varying parameters such as temperature, pressure, and the flow rate of gases (N2 and Ar). Thin films of AlN were prepared by spin coating the precursor onto Si(100) and quartz substrates followed by pyrolysis under optimized CVD conditions obtained from bulk pyrolysis. Pyrolyzed powders and films were characterized with a variety of techniques. X-ray diffraction (XRD) showed 8.5 nm grain size with a dominant 220 orientation. UV-Vis spectroscopy indicated a band gap for the AlN films of ∼5.7 eV, which is close to bulk AlN (6.1 eV). FESEM showed a smooth and homogeneous film surface and EDAX showed a 1.4:1 ratio of Al:N, respectively.
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