Hole Mobility Research Articles

High-performance tin perovskite transistors through formate pseudohalide engineering

The lack of high-performance p-type semiconducting materials hinders the integration of complementary metal-oxide semiconductors with well-established n-type metal-oxide counterparts. Although tin halide perovskites are promising p-type material candidates, their practical implementation is hindered by excessive hole concentrations and difficulties in precisely controlling crystallization, which leads to poor device performance and yield. In this paper, we propose a formate pseudohalide engineering method to overcome these issues and demonstrate high-performance tin perovskite thin-film transistors (TFTs). The incorporation of formate anion greatly suppresses the vacancy defects at the surfaces of the perovskite films with an increase in crystallinity and grain size. This reduces the hole concentration and eliminates the dependence on the addition of excessive tin fluoride for hole suppression. Hence, high-performance TFTs with a high average field-effect hole mobility of 57.34 cm2 V−1 s−1 and on/off current ratios surpassing 108 can be achieved, approaching p-channel low-temperature polysilicon devices.

Piperidine and Pyridine Series Lead-Free Dion-Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors.

Two-dimensional (2D) organic-inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion-Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V-1 s-1 requiring a low threshold voltage of only -2.5 V at a drain voltage of -40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.

19.36% Efficiency Organic Solar Cells Based on Low‐Cost Terpolymer Donors with Simple Molecular Structures

AbstractLow cost and high performance are key elements for the industrialization of organic solar cells (OSCs). In view of this, developing highly‐efficient organic photovoltaic molecules with simple chemical structure is one of the most effective countermeasures. Herein, three simple‐structure terpolymers PTQ12‐5, PTQ12‐10, and PTQ12‐15 are designed and synthesized, by embedding difluoro‐substituted bithiophene (2T‐2F) unit into the backbone of low‐cost and high‐efficiency polymer PTQ10. The synthesis of three terpolymers contains only two‐step synthetic routes and over 85% synthetic yields from cheap raw compounds, thus exhibiting distinctly low‐cost characteristic. Remarkably, PTQ12‐5 shows significantly higher absorbance coefficient and hole mobility than PTQ10. Consequently, PTQ12‐5‐based OSCs shows more efficient exciton dissociation and charge transfer, suppressed carrier recombination, tighter molecular π‐π stacking, and faster and more balanced charge transport, thus demonstrates a significantly improved efficiency of 18.77% than that of PTQ10‐based device (18.03%). Moreover, an outstanding efficiency of 19.36% is achieved in PTQ12‐5‐based ternary device by further modulating the energy level alignment and blending features of photoactive molecules, which is the highest efficiency of OSCs based on low‐cost polymers to date. This work has significant implications for guiding the design of low‐cost and high‐performance organic photovoltaic materials.

Tackling P3HT:Y‐Series Miscibility Through Advanced Processing for Tunable Aggregation

AbstractPolymer and small molecule blend thin films are of strong interest for organic electronics and particularly organic solar cells. The high miscibility in blends of ordinary P3HT and state‐of‐the‐art Y‐series non‐fullerene acceptors (NFAs) suppresses phase separation and aggregation challenging successful charge separation and transport. In this recent work, current‐induced doping (CID) is introduced, a method to precisely control the aggregation of Poly(3‐hexylthiophene) (P3HT) grazing incidence wide angle X‐ray scattering in solution. The highly ordered pre‐aggregation in solution is used here to control the P3HT aggregation in neat films and blends with Y12 (BTP‐4F‐12). This results in a 25‐fold increase in hole mobility in P3HT organic field‐effect transistor (OFET) devices and tunability of the P3HT aggregate quality in the presence of Y12 over large ranges. At the same time, particularly the Y12 long‐range ordering is heavily suppressed by increasing P3HT aggregation. However, solvent vapor annealing (SVA) leads to an extraordinarily high Y12 ordering, changes in the crystal orientation of Y12, and a further improvement of P3HT aggregation. A broad range of different degrees of aggregation of both materials can therefore be obtained in the final thin films solely by changing processing parameters without changing the composition of the material system.

Study of rutile TiO2(110) single crystal by transient absorption spectroscopy in the presence of Ce4+ cations in aqueous environment. Implication on water splitting

Ce4+ cations are commonly used as electron acceptors during the water oxidation to O2 reaction over Ir- and Ru-based catalysts. They can also be reduced to Ce3+ cations by excited electrons from the conduction band of an oxide semiconductor with a suitable energy level. In this work, we have studied their interaction with a rutile TiO2(110) single crystal upon band gap excitation by femtosecond transient absorption spectroscopy (TAS) in solution in the 350–900 nm range and up to 3.5 ns. Unlike excitation in the presence of water alone the addition of Ce4+ resulted in a clear ground-state bleaching (GSB) signal at the band gap energy of TiO2 (ca. 400 nm) with a time constant t = 4–5 ps. This indicated that the Ce4+ cations presence has quenched the e-h recombination rate when compared to water alone. In addition to GSB, two positive signals are observed and are attributed to trapped holes (in the visible region, 450–550 nm) and trapped electrons in the IR region (>700 nm). Contrary to expectation, the lifetime of the positive signal between 450 and 550 nm decreased with increasing concentrations of Ce4+. We attribute the decrease in the lifetime of this signal to electrostatic repulsion between Ce4+ at the surface of TiO2(110) and positively charged trapped holes. It was also found that at the very short time scale (<2–3 ps) the fast decaying TAS signal of excited electrons in the conduction band is suppressed because of the presence of Ce4+ cations. Results point out that the presence of Ce4+ cations increases the residence time (mobility) of excited electrons and holes at the conduction band and valence band energy levels (instead of being trapped). This might provide further explanations for the enhanced reaction rate of water oxidation to O2 in the presence of Ce4+ cations.

Tin Oxide/Amphiphilic Polymer Double‐Layered Hole Transporter for High‐Efficiency Tin Perovskite Solar Modules

AbstractAn exquisite, engineering of two poor hole transporting materials (HTMs, SnO, and PDTON) to form an excellent double‐layered HTL (SnO/PDTON) for inverted tin‐perovskite solar modules (TPSMs) is developed. SnO/PDTON has better photovoltaic performance than the commonly used PEDOT:PSS HTM when large‐area TPSMs are fabricated. Thermally evaporated SnO (that is a simple, available oxide with high hole mobility, good transparency, and adjustable frontier orbitals energy levels) film is used as a main hole transporting layer (HTL). Amphiphilic polymer PDTON (having the amine and ether groups on the side chains) film is used as a Co‐HTL, cross‐linker, passivator, and interface modification agent, as unveiled various physicochemical studies. Double‐layered SnO/PDTON with a flat morphology and good affinity toward perovskite precursor solution creates also a proper surface for depositing large‐area, high‐quality TPsk film. Therefore, TPSM (25.2 cm2 active area on 10 cm × 10 cm ITO substrate) based on double‐layered SnO/PDTON HTL achieving an efficiency over 10% with a negligible current hysteresis is reported for the first time. This study emphasizes not only the exquisite design of combining the specific characteristics of two prosaic HTMs to become a good double‐layered HTL but also gives a direction toward fabricating TPSMs to be applied in all‐perovskite tandem solar module.

Dual Polarization Strategy for Boosting Electron-Hole Separation toward Overall Water Splitting within Ferroelectric β-AIBIIIO2 (BIII = P3+, As3+, Sb3+, and Bi3+ for Lone Pairs).

Ferroelectric materials, leveraging an inherent built-in electric field, are excellent in suppressing electron-hole recombination. However, the reliance solely on bulk polarization remains insufficient in enhancing carriers' separation and migration, limiting their practical application in photocatalytic overall water splitting (POWS). To address this, we incorporated cations with ns2 lone pairs (P3+, As3+, Sb3+, and Bi3+) into ferroelectric semiconductors, successfully constructing 44 β-AIBIIIO2 photocatalysts with dual polarization. Through rigorous first-principles calculations and screenings for stability, band characteristics, and polarization, we identified four promising candidates: β-LiSbO2, β-NaSbO2, β-LiBiO2, and β-TlBiO2. Within these materials, lone pairs induce local polarization in the xy-plane. Additionally, out of the plane, there is robust bulk polarization along the z-direction. This synergistic effect of the combined local and bulk polarization significantly improves the separation efficiency of electron-hole pairs. Explicitly, the electron mobility of the four candidates ranges from 105 to 106 cm2 s-1 V-1, while the hole mobility also increases significantly compared to single-phase polarized materials, up to 106 cm2 s-1 V-1. Notably, β-TlBiO2 is predicted to achieve a solar-to-hydrogen (STH) efficiency of 17.2%. This study not only offers insights for water-splitting catalyst screening but also pioneers a path for electron-hole separation through the dual polarization strategy.

Benzodipyrrolidone-based donor-acceptor semiconducting polymers with high hole mobility and noncovalent conformational locks

Constructing highly coplanar polymer backbone plays an important role in boosting the carrier mobility of organic field effect transistors (OFETs) devices. In this study, based on noncovalent conformational locks strategy, we synthesized the electron-acceptor (A) monomer via introducing 3-dodecylthiophene on strong electron-deficient planar benzodipyrrolidone and the electron-donor (D) monomers containing different numbers (0–2) of fluorine atoms at different positon. A series of novel D-A copolymers, namely PBDP-F0, PBDP-F1 and PBDP-F2 with different backbone conformational locks through F⋯S and F⋯H–C noncovalent interactions, were obtained via Stille polycondensation. For the application in an organic field-effect transistor, all the polymers exhibited p-type charge transport characteristics and good performance with the highest hole mobilities as 0.24 cm2 V−1 s−1 for PBDP-F0, 0.87 cm2 V−1 s−1 for PBDP-F1 and 1.93 cm2 V−1 s−1 for PBDP-F2, respectively. AFM and GIXRD investigations indicated that all polymers take predominantly edge-on orientation packing mode because of the rigid and coplanar backbone conformation and the annealing films exhibited small π-π stacking distances of 3.73, 3.71 and 3.69 Å for PBDP-F0, PBDP-F1 and PBDP-F2 respectively. This work demonstrates that modified BDP-based D-A copolymers with conformational locks has a potential application in the high-performance semiconductor materials.

Asymmetrical benzothiadiazole core-based hole transport materials for planar perovskite solar cell

For the purpose of fabricating high performance hole transport materials (HTMs) for n-i-p planar perovskite solar cells (PSCs), two asymmetric and one symmetric structured donor-acceptor-donor (D-A-D) type small molecules (a-BTC, a-BTBC and BTDC) were synthesized by introducing two different peripheral groups toward benzothiadiazole core. The a-BTBC with longer π conjugation lengths shows good film formation property, higher hole mobility and conductivity, and achieves power conversion efficiency (PCE) of 23.5 %. It can retain 80 % of the initial PCE after aging 30 days in an ambient condition with relative humidity of 40–60 %. Our results show the potential and provides reference for molecular design of asymmetric structured HTMs.

UV‐A/B High‐Sensitivity Organic Photodetectors Containing Butterfly‐Shaped Furan‐Fused BN‐Dihydropyrene with Push‐Pull Electron “Wings” toward Image Sensor

AbstractReplacement of C─C unit with its isoelectronic B─N unit in aromatics provides a new class of molecules with appealing properties. Herein, Five novel butterfly‐shaped furan‐fused bis‐BN dihydropyrenes (FBN) derivatives are synthesized with different push‐pull electron “wings”. These compounds exhibit prominent UV‐A/B absorption, high energy levels, and p‐type characteristics. Thanks to the side‐chain engineering and BN dipole manipulation, their intramolecular dipole moments and intermolecular stacking mode are effectively regulated to improve intra‐ and inter‐molecular charge transfer, thus achieving high hole mobilities. Five FBN‐X compounds are doped with PC71BM as heterojunction photosensitive layers to fabricate solution‐processed high performance organic photodetectors (OPDs), which exhibit self‐powered effect and high sensitivity to UV‐A/B. Especially, the FBN‐CN‐based device presents a high detectivity up to 1.72 × 1012 Jones, a peak external quantum efficiency of 19.1%, and an extremely low dark current density of 8.90 × 10−10 A cm−2 under 320 nm at 0 V. To the best of authors knowledge, it is the first report of photodiode‐type UV‐OPDs containing BN‐doped polycyclic aromatic hydrocarbons as active layer to date. And the optimal device shows a significant advantage over the reported 300–380 nm UV‐OPDs. In addition, a 10 × 10 array of organic image sensor is successfully demonstrated, which showcases excellent low‐light imaging capability.

Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing

In presented work, a reactive high-power impulse magnetron sputtering (r-HiPIMS) was used for high-rate deposition (≈ 170 nm/min) of Cu2O films. Films were deposited on a standard soda-lime glass (SLG) substrate at a temperature of 190 °C. As-deposited films exhibit poor hole mobility in the orders of ≈ 1 cm2/Vs. We have systematically studied the effect of laser thermal annealing (LTA) procedure performed using high-power infrared laser under different laser parameters (number of pulses, length of the pulse). We have found, LTA procedure could significantly enhance the hole mobility (up to 24 cm2/Vs in our case). We have also fitted the results of a temperature-dependent Hall measurement to clarify the mechanism of the reported increase in hole mobility. Moreover, we have discussed the effect of the LTA procedure on microstructure (crystallinity, surface morphology) and on the value of optical band gap.

High Vertical Hole Mobility through Minimization of Water-Induced Traps by F4TCNQ Doping in Conjugated Amphiphilic Diblock Copolymers

High Vertical Hole Mobility through Minimization of Water-Induced Traps by F4TCNQ Doping in Conjugated Amphiphilic Diblock Copolymers

Boosting the performance of polymer field-effect transistors through fluorine atom substitutions and comparing the effect of various acceptor units and channel mobilities

Three conjugated copolymers, PDPP-2FTVT, PIID-2FTVT, and PNDI-2FTVT based on the 2,2′-(1E)-1,2-ethenediylbis[3-fluorothiophene] (2FTVT) core with varying acceptor units, diketopyrrolopyrrole (DPP), isoindigo (IID), and naphthalenediimide (NDI) were developed for organic field-effect transistors (OFETs). Combined electron-withdrawing fluorine atoms and vinyl linkage in the 2FTVT unit not only reduce the frontier molecular orbital energies but also extended the absorption profile and planarize the polymer backbone, manifesting synergetic effect on the strengthened molecular interactions and charge-carrier properties. The resulted copolymer, PDPP-2FTVT show highly reliable thin film transistor properties with highest hole mobility of 1.93 cm2 V−1 s−1 compared to PIID-2FTV and PNDI-2FTVT. PIID-2FTV copolymer show ambipolar characteristic with hole and electron mobilities of 0.71 and 0.03 cm2 V−1 s−1 respectively while PNDI-2FTVT exhibited the highest electron mobility of 0.20 cm2 V−1 s−1 among three copolymers. Thin film micro-structure characterization reveal that the three copolymers formed lamellar, edge-on molecular packing (for PDPP-2FTVT and PIID-2FTV), increased crystallinity with smaller π-π stacking distances, and strengthen the planarity after thermal annealing. These results contribute important progresses in solution-processed OFET and could provide a greater possibility of 2FTVT based copolymers for commercial application.

Hexabenzoheptacene: A Longitudinally Multihelicene Nanocarbon with Local Aromaticity and Enhanced Stability

We report the synthesis of a longitudinally helical molecular nanocarbon, hexabenzoheptacene (HBH), along with its dimethylated derivative (HBH‐Me), which are composed of six benzene rings periodically benzannulated to both zigzag edges of a heptacene core. This benzannulation pattern endows the resulting nanocarbons with a helical heptacene core and local aromaticity, imparting enhanced solubility and stability to the system. The chiral HBH‐Me adopts a more highly twisted conformation with an end‐to‐end twist angle of 95°, enabling the separation of the enantiomers. Both HBH and HBH‐Me can be facilely oxidized into their corresponding dications, which exhibit enhanced planarity and aromaticity upon loss of electrons. Notably, both longitudinally helical nanocarbons readily promote solid state packing into two‐dimensional (2D) arrangement. Single‐crystal microbelts of HBH‐Me show hole mobility up to 0.62 cm2 V‐1 s‐1, illustrating the promising potential of these longitudinally helical molecules for organic electronic devices.

Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates through Low-Thermal Budget.

III-V semiconductors possess high mobility, high frequency response, and detection sensitivity, making them potentially attractive for beyond-silicon electronics applications. However, the traditional heteroepitaxy of III-V semiconductors is impeded by a significant lattice mismatch and the necessity for extreme vacuum and high temperature conditions, thereby impeding their in situ compatibility with flexible substrates and silicon-based circuits. In this study, a novel approach is presented for fabricating ultrathin InSb single-crystal nanosheets on arbitrary substrates with a thickness as thin as 2.4nm using low-thermal-budget van der Waals (vdW) epitaxy through chemical vapor deposition (CVD). In particular, in situ growth has been successfully achieved on both silicon-based substrates and flexible polyimide (PI) substrates. Notably, the growth temperature required for InSb nanosheets (240°C) is significantly lower than that employed in back-end-of-line processes (400°C). The field effect transistor devices based on fabricated ultrathin InSb nanosheets exhibit ultra-high on-off ratio exceeding 108 and demonstrate minimal gate leakage currents. Furthermore, these ultrathin InSb nanosheets display p-type characteristics with hole mobilities reaching up to 203 cm2 V-1 s-1 at room temperatures. This study paves the way for achieving heterogeneous integration of III-V semiconductors and facilitating their application in flexible electronics.

Hexabenzoheptacene: A Longitudinally Multihelicene Nanocarbon with Local Aromaticity and Enhanced Stability.

We report the synthesis of a longitudinally helical molecular nanocarbon, hexabenzoheptacene (HBH), along with its dimethylated derivative (HBH-Me), which are composed of six benzene rings periodically benzannulated to both zigzag edges of a heptacene core. This benzannulation pattern endows the resulting nanocarbons with a helical heptacene core and local aromaticity, imparting enhanced solubility and stability to the system. The chiral HBH-Me adopts a more highly twisted conformation with an end-to-end twist angle of 95°, enabling the separation of the enantiomers. Both HBH and HBH-Me can be facilely oxidized into their corresponding dications, which exhibit enhanced planarity and aromaticity upon loss of electrons. Notably, both longitudinally helical nanocarbons readily promote solid state packing into two-dimensional (2D) arrangement. Single-crystal microbelts of HBH-Me show hole mobility up to 0.62 cm2 V-1 s-1, illustrating the promising potential of these longitudinally helical molecules for organic electronic devices.

3D Conjugated Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells and Modules.

The orthogonal structure of the widely used hole transporting material (HTM) Spiro-OMeTAD imparts isotropic conductivity and excellent film-forming capability. However, inherently weak intra- and inter-molecular π-π interactions result in low intrinsic hole mobility. Herein, a novel arylamine derivative, termed FTPE-ST, with a twist conjugated dibenzo[g,p]chrysene core and coplanar 3,4-ethylenedioxythiophene (EDOT) as extended donor units, was designed to enhance intra- and inter-molecular π-π interactions, without compromising on solubility. The 3D configuration provides the material multi-direction charge transport as well as excellent solubility even in 2-methylanisole (2-MA), and its large conjugated delocalization backbone endows the HTM with a high hole mobility (7.2 × 10-4 cm2V-1s-1). Moreover, the sulfur donors in the EDOT units coordinate to lead ions on the perovskite surface, leading to stronger interfacial interactions and the suppression of defects at the perovskite/HTM interface. As a result, perovskite solar cells (PSCs) employing FTPE-ST as the HTM achieve a champion power conversion efficiency (PCE) of 25.21% with excellent long-time stability, which is one of the highest PCEs for non-spiro HTMs in n-i-p PSCs. In addition, the excellent film-forming capacity of the HTM enables the fabrication of FTPE-ST-based large-scale PSCs (1.0 cm2) and modules (29.0 cm2), which achieve PCEs of 24.21% (certificated 24.17%) and 21.27%, respectively. This article is protected by copyright. All rights reserved.

Dimensional and Doping Engineering of Chiral Perovskites with Enhanced Spin Selectivity for Green Emissive Spin Light-Emitting Diodes.

Chiral perovskites play a pivotal role in spintronics and optoelectronic systems attributed to their chiral-induced spin selectivity (CISS) effect. Specifically, they allow for spin-polarized charge transport in spin light-emitting diodes (LEDs), yielding circularly polarized electroluminescence at room temperature without external magnetic fields. However, chiral lead bromide-based perovskites have yet to achieve high-performance green emissive spin-LEDs, owing to limited CISS effects and charge transport. Herein, we employ dimensional regulation and Sn2+-doping to optimize chiral bromide-based perovskite architecture for green emissive spin-LEDs. The optimized (PEA)x(S/R-PRDA)2-xSn0.1Pb0.9Br4 chiral perovskite film exhibits an enhanced CISS effect, higher hole mobility, and better energy level alignment with the emissive layer. These improvements allow us to fabricate green emissive spin-LEDs with an external quantum efficiency (EQE) of 5.7% and an asymmetry factor |gCP-EL| of 1.1 × 10-3. This work highlights the importance of tailored perovskite architectures and doping strategies in advancing spintronics for optoelectronic applications.

Improvement of Perovskite Solar Cells Efficiency by Management of the Electron Withdrawing Groups in Hole Transport Materials: Theoretical Calculation and Experimental Verification.

Management of functional groups in hole transporting materials (HTMs) is a feasible strategy to improve perovskite solar cells (PSCs) efficiency. Therefore, starting from the carbazole-diphenylamine-based JY7 molecule, JY8 and JY9 molecules are incorporated into the different electron-withdrawing groups of fluorine and cyano groups on the side chains. The theoretical results reveal that the introduction of electron-withdrawing groups of JY8 and JY9 can improve these highest occupied molecular orbital(HOMO)energy levels, intermolecular stacking arrangements, and stronger interface adsorption on the perovskite. Especially, the results of molecular dynamics (MD) indicate that the fluorinated JY8 molecule can yield a preferred surface orientation, which exhibits stronger interface adsorption on the perovskite. To validate the computational model, the JY7-JY9 are synthesized and assembled into PSC devices. Experimental results confirm that the HTMs of JY8 exhibit outstanding performance, such as high hole mobility, low defect density, and efficient hole extraction. Consequently, the PSC devices based on JY8 achieve a higher PCE than those of JY7 and JY9. This work highlights the management of the electron-withdrawing groups in HTMs to realize the goal of designing HTMs for the improvement of PSC efficiency.

Low-Temperature Cross-Linked Hole Transport Layer for High-Performance Blue Quantum-Dot Light-Emitting Diodes.

Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4'-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1'-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10-3 cm2 V-1 s-1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.