Hole Charge Carriers Research Articles

The Hall Effect in Single Crystals of Topological Semimetals WTe<sub>2</sub> and MoTe<sub>2</sub>

The Hall effect in single crystals of topological semimetals WTe2 and MoTe2 is studied in the temperature range from 2 to 100 K and in magnetic fields up to 9 T. It is established that the Hall resistivity of WTe2 shows a nonlinearly dependence on the magnetic field at temperatures below 100 K. At the same time, the Hall resistivity of MoTe2 depends linearly with the magnetic field at temperatures range from 2 to 25 K and a nonlinear contribution appears at 50 K. Along with the known mechanism of compensation/decompensation of electron and hole charge carriers, the nonlinear dependence of the Hall resistivity of WTe2 and MoTe2 single crystals on the magnetic field is associated with the scattering of charge carriers on the surface.

Computational prediction of Thermo-Elastic and charge carriers transport properties of Ba2MnReO6, Ba2NiReO6, and Sr2MnReO6 double Perovskite compounds

The present work involves a computational investigation of the elastic, thermal, and thermoelectric characteristics of Ba2MnReO6, Ba2NiReO6, and Sr2MnReO6 from the Double Perovskite family. The study verified the mechanical stability of the three compounds and investigated Young’s modulus, Poisson, bulk, and shear modulusin various stress orientations. We were also able to compute longitudinal, transverse, and average sound velocities (Vl, Vt, and Vm, in m/s), and the findings revealed that Sr2MnReO6 had a greater longitudinal velocity than the other two compounds. Thermodynamic characteristics revealed that Ba2MnReO6, Ba2NiReO6, and Sr2MnReO6exhibit low lattice thermal conductivity (Kl) at medium temperatures, strong heat absorption, and a moderate coefficient of thermal expansion.The analysis of the electron and hole charge carriers’ transport characteristics revealed that, when doped with an electron concentration close to 1020 cm−3, the two materials, Ba2MnReO6 and Sr2MnReO6, may have an excellent figure of merit surpassing 0.6 at temperatures over 600 K.

Weak antilocalization in the topological semimetal candidate YbAuSb

We report a study of the magnetic and magnetotransport properties of YbAuSb single crystals, which were grown using the bismuth flux. The x-ray diffraction data indicate that YbAuSb crystallizes in LiGaGe-type hexagonal structure with space groupP63mc. Our magnetic measurements revealed that YbAuSb is nonmagnetic with a divalent state of ytterbium ion. The temperature-dependent electrical resistivity exhibits a metallic behavior. A cusp-like feature in transverse and longitudinal magnetoresistance is observed at the low field regime. This cusp-like feature is attributed to the weak antilocalization (WAL) effect, which is more prominent at low temperatures. The transverse magnetoconductivity in low field region follows semiclassical model∼B, which is consistent with the presence of WAL phenomena. The WAL effect in transverse and longitudinal magnetoconductance is well explained using the modified Hikami-Larkin-Nagaoka and generalized Altshuler-Aronov model, respectively. The Hall resistivity shows a linear field dependence with a positive slope, suggesting hole charge carriers dominate in electrical transport. The calculated carrier density and mobility are in the order of 1020 cm-3and 102 cm2 V-1 s-1, respectively.

Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements

The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent electroluminescence measurements on dual wavelength AlGaN multiple quantum well (MQW) LEDs show a strong shift in the spectral power distribution from 250 to 233 nm with decreasing temperature. Comparing experimental data with simulation shows that the hole mobility and the electron to hole mobility ratios have a significant influence on the carrier injection efficiency (CIE) and that the change in the spectral power distribution is originating from a change in the hole distribution in the MQWs. Poor hole injection and charge carrier confinement in the AlGaN MQW active region was identified as one of the main reasons for the low CIE in far-UVC LEDs.

Accelerated Degradation of FAPbI3 Perovskite by Excess Charge Carriers and Humidity

Excess charge carriers in metal halide perovskite layer have been known to accelerate degradation of the film and devices to cause poor operational stability of perovskite solar cells (PSCs). While mechanisms for such degradation have been predominantly studied for methylammonium‐based perovskites, effects of excess charge carriers and their interplays with other degradation causes are barely studied for widely used formamidinium‐based perovskites. Herein, a possible decomposition mechanism of the formamidinium lead tri‐iodide (FAPbI3) perovskite in the presence of excess charge under different humidity levels is investigated. The operating condition with excessive charges is simulated by placing half devices with either electron‐transporting layer (ETL) or hole‐transporting layer (HTL) under 1 sun illumination. FAPbI3 in contact with ETL degrades more rapidly than the one with HTL, which is attributed to excess hole charge carriers in the film. Under higher humidity, the synergetic effect of excess charge carriers and humidity is found and thus degradation pathway and kinetics are strongly dependent on the humidity level. The fundamental understanding of degradation pathways for formamidinium perovskites should provide a useful insight toward the development of efficient and operationally stable PSCs toward practical usage.

Elasto-Thermodiffusive Microtemperature Model Induced by a Mechanical Ramp-Type of Nanoscale Photoexcited Semiconductor

ABSTRACT In this study, a novel theoretical approach to describe thermo-optical elastic materials is proposed. This formulation offers insights into the relationship between plasma waves and thermomechanical waves when the microtemperature properties of semiconductor materials such as silicon are taken into account. The proposed model involves incorporating the concept of microtemperature effect according to photothermal (PT) excitation processes in nonlocal photo-thermoelasticity. The investigation of the electron-hole interaction concerning the elasto-thermodiffusion (ETD) theory in the context of thermoelastic (TD) and electronic (ED) deformation is the main focus of the work. The advanced model is utilized to analyze how the mechanical loading of ramp-like structures impacts the unrestricted nonlocality semiconductor material on a free outer plane. The Laplace transform approach in one-dimensional (1D) provides an analytical solution for main non-dimensional thermo-photo-elastic fields (the hole charge carrier field, the displacement (acoustic) wave, thermal wave, and plasma wave (carrier density). The primary fields in the Laplace domain are obtained analytically, and boundary conditions are established using a mechanical ramp type. Using a numerical inverse Laplace transform, full time domain solutions for the fundamental fields are obtained numerically according to the Riemann-sum approximation approach. The graphical representations illustrate and discuss the outcomes of the main physical fields.

(Invited) Evaluating Chemical Doping and Charge-Carrier Transport in Carbon Nanotube Dispersions

Chemical charge-transfer, or redox, doping has long been recognized as a powerful approach to tune the charge carrier density in pi-conjugated semiconductors. Despite this, and the extensive effort that has been put into developing novel redox dopants, several challenges remain to understand (i) the doping mechanism/efficiency, (ii) the interactions between the injected charge carrier and the associated counterion, and (iii) the impact that these have on charge carrier transport. This is complicated by the fact that it is very difficult to accurately measure charge carrier densities in pi-conjugated semiconductors and to assess carrier-counterion interactions. Here we employ dispersions of enriched semiconducting single-walled carbon nanotubes (s-SWCNT) as a prototypical pi-conjugated semiconductor, since the rigid structure and strong optical transitions offer some advantages over typically more disordered conjugated polymers. We employ a suite of spectroscopic techniques to probe charge carrier doping and transport in isolated polymer-wrapped s-SWCNT in a low dielectric constant solution-phase environment. We compare solution-phase s-SWCNT samples in toluene that are p-type doped by either 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) or (2,3,4,5,6-pentafluoro)benzyloxy-substituted icosahedral dodecaborane cluster (DDB-F60). We use a combined approach of steady state optical spectroscopy with 19F NMR studies. Optical spectroscopy allows us to track the bleach of the electronic transitions due to excitons and the appearance of signature due to charge carrier-induced trions, which we can correlate to the concentration of dopant counterions extracted from NMR experiments. This combined methodology allows for quantitative determination of a molar extinction coefficient for free carriers for the SWCNT dispersion. We subsequently show that DDB-F60 is a more potent charge-carrier dopant than F4-TCNQ at low concentrations but that the ultimate injected hole charge-carrier density is limited by the large size of the DDB-F60 counteranion, due to saturation of the carbon nanotube surface area that is accessible to the dopant molecules. Using a non-contact spectroscopy technique in the microwave frequency region (ca. 9 GHz), we show that the holes injected by DDB-F60 are more delocalized and mobile, consistent with calculations that suggest a smaller coulombic binding energy between the hole on the carbon nanotube and the electron on the DDB-F60 counteranion. However, samples doped by F4-TCNQ reach a higher peak conductance than is achieved by DDB-F60 doping, where the conductance in the latter case is limited by the maximum achievable hole charge-carrier density and hole scattering processes that reduce the carrier mobility at high hole densities. Our observations point to the need to understand the subtle balance between the carrier-counterion interactions and the injected charge-carrier density to optimize charge-carrier transport in chemically doped s-SWCNT systems.

Solvothermally silver doping boosting the thermoelectric performance of polycrystalline Bi2Te3

Bismuth telluride (Bi2Te3) is one of the most promising thermoelectric materials for commercial application at room temperature, but the thermoelectric performance of these materials still needs to be improved. In this study, we report a type of solvothermally Ag-doped Bi2Te3 microplate. By sintering these microplates into polycrystalline bulk materials, a high room-temperature figure of merit of 1 has been achieved. Based on comprehensive micro/nanostructural characterizations, we found that the solvothermally doped Ag in Bi2Te3 plays two main roles, namely as the dopants that effectively induce the point defects of AgBi and forming Ag2Te nanophases. AgBi can provide additional hole charge carriers, effectively adjusting the initially high electron carrier concentration in the system, while the Ag2Te nanophases effectively trigger energy filtering effect to maintain a high Seebeck coefficient, thereby contributing to a competitively high power factor of 25.5 μW cm−1 K−2 at 298 K. Simultaneously, a low thermal conductivity of 0.74 W m−1 K−1 is obtained due to the strong phonon scattering at various lattice imperfections, induced by the solvothermally Ag-doping, which include point defects, grain/phase boundaries, local lattice distortions, and dislocations. This work fills the gap in knowledge on the solvothermally Ag-doping mechanism in Bi2Te3 and provides guidance for the innovative design of high-performing inorganic thermoelectrics.

Quantifying Free Carriers in Doped SWCNTs: An Optical and Magnetic Resonance Approach

Single-walled carbon nanotubes (SWCNTs) have become increasingly important for opto-electronic devices due to their strong optical absorption, tunable carrier densities, and large carrier mobilities. To produce electricity in applications like photovoltaics and sensors, after light absorption the bound exciton must be separated into free charges carriers. However, the nature of charges in s-SWCNTs is still unclear and a way to quantify them has remained elusive. To better understand free carriers in doped semiconducting SWCNTs we employ a new class of molecular charge-transfer dopants, functionalized dodecaborane (DDB) molecules, to tune the charge carrier density. These DDB dopants form delocalized hole charge carriers on the SWCNTs due to the spatial separation between nanotube surface and the boron cluster containing the negative counterion. Importantly, the fluorine-decorated DDB dopants have strong 19F resonances, characteristic of the negatively charged molecules, that can quantify the absolute concentrations of DDB- and SWCNT+. As such, we use a combined approach of steady state optical spectroscopy and 19F NMR studies. Optical spectroscopy allows to track the excitonic absorption quenching and trion signature due to charge carrier density while correlating it to the concentration of carriers extracted from NMR experiments. This combined methodology allows for quantitative determination of a molar extinction coefficient for free carriers in semiconducting SWCNTs. This molar extinction coefficient can then be used in further studies to determine the yield and mobility of free carriers generated in a variety of samples and applications, for example at a heterojunction in photovoltaic devices, to determine quantitative charge transfer efficiencies and dynamics.

(Invited) Understanding Chemical Doping and Transport in Dispersions of Isolated Carbon Nanotubes

Recently we demonstrated that the chemical structure of the redox charge-carrier dopant plays a significant role in the delocalization and transport properties of the injected charge-carriers in networks of enriched semiconducting single-walled carbon nanotubes (s-SWCNT). Here, we seek to gain a deeper understanding of the charge-carrier doping and transport processes for isolated polymer-wrapped s-SWCNT in a low dielectric constant solution-phase environment. We compare solution-phase s-SWCNT samples in toluene that are p-type doped by either 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) or (2,3,4,5,6-pentafluoro)benzyloxy-substituted icosahedral dodecaborane cluster (DDB-F60). We show that DDB-F60 is a more potent charge-carrier dopant than F4-TCNQ at low concentrations but that the ultimate injected hole charge-carrier density is limited by the large size of the DDB-F60 counteranion, due to saturation of the carbon nanotube surface area that is accessible to the dopant molecules. Using a non-contact spectroscopy technique in the microwave frequency region (ca. 9 GHz), we show that the holes injected by DDB-F60 are more delocalized and mobile, consistent with calculations that suggest a smaller coulombic binding energy between the hole on the carbon nanotube and the electron on the DDB-F60 counteranion. However, samples doped by F4-TCNQ reach a higher peak conductance than is achieved by DDB-F60 doping, where the conductance in the latter case is limited by the maximum achievable hole charge-carrier density and hole scattering processes that reduce the carrier mobility at high hole densities. Our observations point to the need to understand the subtle balance between the carrier-counterion interactions and the injected charge-carrier density to optimize charge-carrier transport in chemically doped s-SWCNT systems.

Low-Regioregularity Polythiophene for a Highly Sensitive and Stretchable Gas Sensor

In this study, we examined how the regioregularity of poly(3-hexylthiophene) (P3HT) affects molecular packing, free volume, charge transport, and gas sensing properties. Our results showed that the presence of regular alkyl side chains on the polymer backbone promoted a high degree of structural order in regioregular P3HT molecules, leading to a compact packing density and reduced free volume. Consequently, it was more challenging for NO2 molecules to interact with the hole charge carriers in the conductive channel. On the other hand, the regiorandom P3HT films displayed a larger free volume, attributed to the irregular side chains, which facilitated the gas-analyte interaction while impeding efficient charge transport. Thus, these films exhibited greater sensitivity to analyte gas molecules. The molecular order, packing density, and hardness of P3HT films were confirmed through the use of multiple techniques, including UV-vis spectroscopy, atomic force microscopy, and grazing-incidence X-ray diffraction. Additionally, the regiorandom P3HT films showed enhanced mechanical flexibility compared to the regioregular films. In conclusion, our findings emphasize that the regularity of polymer molecules plays a significant role in determining the charge carrier transport and gas adsorption characteristics.

G4CMP: Condensed matter physics simulation using the Geant4 toolkit

G4CMP simulates phonon and charge transport in cryogenic semiconductor crystals using the Geant4 toolkit. The transport code is capable of simulating the propagation of acoustic phonons as well as electron and hole charge carriers. Processes for anisotropic phonon propagation, oblique charge-carrier propagation, and phonon emission by accelerated charge carriers are included. The simulation reproduces theoretical predictions and experimental observations such as phonon caustics, heat-pulse propagation times, and mean charge-carrier drift velocities. In addition to presenting the physics and features supported by G4CMP, this report outlines example applications from the dark matter and quantum information science communities. These communities are applying G4CMP to model and design devices for which the energy transported by phonons and charge carriers is germane to the performance of superconducting instruments and circuits placed on silicon and germanium substrates. The G4CMP package is available to download from GitHub: github.com/kelseymh/G4CMP.

Evaluation of Photocatalytic Activity and Electrochemical Properties of Hematite Nanoparticles

The symmetric nano morphologies, asymmetric electronic structures, and as well as the heterojunctions of the developed photocatalytic systems perform a vital role in promoting light absorption, separation of electron and hole pairs and charge carrier transport to the surface when exposed to near-infrared (NIR) light. In this present work, we synthesized hematite (α-Fe2O3) nanoparticles (NPs) by a facile hydrothermal method and studied their structural, optical, and photocatalytic properties. Powder X-ray diffraction (XRD) confirmed the rhombohedral phase of the α-Fe2O3 NPs, and Fourier transform infrared spectroscopy (FT-IR) was used to investigate symmetric and asymmetric stretching vibrations of the functional groups on the surface of the catalysts. The optical bandgap energy was estimated to be 2.25 eV using UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) and scanning electron microscopy (SEM) images indicated sphere like morphology. The oxidation and reduction properties of α-Fe2O3 NPs were analyzed by cyclic voltammetry (CV). The α-Fe2O3 NPs were utilized for the degradation of methylene blue (MB) dye under natural sunlight. The experimental results demonstrate that the degradation efficiency was achieved at 33% in 2 h, and the pseudo-first-order rate constant was calculated to be 0.0033 min−1.

Cd implantation in α−MoO3 : An atomic scale study

Lamellar $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{MoO}}_{3}$ crystals were implanted with low fluence of radioactive $^{111\mathrm{m}}\mathrm{Cd}$ ions at ISOLDE-CERN. Subsequently, we have probed the interaction of the Cd impurity in the lattice with native point defects, such as oxygen vacancies, as a function of annealing temperature using the time differential perturbed angular correlations nanoscopic technique. The experimental data were complemented and interpreted by modeling different Cd-defect configurations in $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{MoO}}_{3}$ with first-principles density functional theory (DFT). The agreement between experiments and DFT simulations shows that only the interstitial Cd (${\mathrm{Cd}}_{I}$) prevails in the van der Waals gap, by inducing a polaron effect. Upon raising the annealing temperature, ${\mathrm{Cd}}_{I}$ is able to trap hole charge carriers resultant from the oxygen vacancies ${V}_{\mathrm{O}}$. Oxygen vacancies were found to form most commonly at two-fold coordinated (O2) atoms. According to comparison DFT results with the experimental electric field gradient values (${V}_{zz}$ and $\ensuremath{\eta}$) and the calculated formation energies for different defect complexes, the configuration of ${\mathrm{Cd}}_{I}$ with two (O2) vacancies (${V}_{\mathrm{O}2}$), located at different planes, is found to be more favorable and stable than the other defect configurations. The electron-polaron formation around the Cd impurity at an interstitial site is enhanced by inducing (O2) vacancies with the creation of hole polaron states.

Hall Current Effect of Magnetic-Optical-Elastic-Thermal-Diffusive Non-Local Semiconductor Model during Electrons-Holes Excitation Processes

This paper investigates a theoretical model for the interaction between electrons and holes (E/H) in elastic non-local semiconductors. When the medium is activated by photo-energy because of high temperatures, an optical-elastic-thermal-diffusion (OETD) process occurs and is described by this mathematical-physical model. A study is conducted on the impact of the Hall current brought on by the collapse of a strong magnetic field on the exterior of the non-local semiconductor medium. A Hall effect is brought on by the magnetic field’s effect on the density of magnetic flux. The Laplace transform with initial conditions of the dimensionless main physical fields in one dimension (1D) is used to demonstrate this. Mathematically, in the Laplace domain, the generic linear solutions for the strain and temperature distributions, as well as charge carrier holes and electrons, are derived. The key physical fields’ complete solutions in the time domain are obtained by numerically simulating a few thermal, mechanical, and optical conditions at the free surface of the semiconductor using the Laplace inverse approximation technique. For silicon material, the photo-thermoelasticity theory’s Hall current effect, non-local parameter, and effects of thermal relaxation durations are graphically displayed and analyzed.

Silicon/graphene–ITO multiple heterojunctions and 1D PhC waveguide-based photodetection for mid-NIR IPE with high responsivity

A nanophotonic photodetector is proposed with a multi-heterojunction structure based on silicon–ITO (Indium Tin Oxide) slot waveguide covered with 2D (two-dimensional) graphene sheets. A heavily n-doped ITO layer covers the whole device and works as an electrode to reduce the light loss at the metal–graphene interfaces. Different waveguides are arranged to design a one-dimensional photonic crystal (1D PhC) and the slot is defined by creating a defect in it. The PhC provides strong confinement of light, increasing the light–matter interaction, and thus generating more electron–hole (e–h) pairs or charge carriers under light illumination. Moreover, the multiple heterojunctions enhance the e–h generation and help enhancing the transportation of charge carriers. As a result, high photocurrent, fast response across a large bandwidth, strong electron-photon interaction, and also enhancement of photocarrier multiplications can be achieved. The photodetector realizes a photoresponsivity beyond 0.6 A/W at around 1550 nm wavelength. From 0.5 V–2 V of the bias voltage, the difference between the photocurrent and the dark current for the device with the PhC is more than 5 times that for the device without the PhC. Moreover, a 25 Gbit/s non-return to zero optical transmission is measured at 10 km transmission. The proposed device has diverse applications such as telecommunications, optical computing, interconnects, laser radar, lab-on-chip for sensing, and on-chip quantum photonics.

A novel photo-elasto-thermodiffusion waves model based on electron-hole deformation of semiconductor medium

ABSTRACT This article introduces a new mathematical, theoretical physics model for discussing the interaction between the electrons and holes in the semiconductor medium. The model has been studied in the context of the generalized elasto-thermodiffusion (ETD) theory of the photothermal (PT) transport processes. The governing equations give a detailed account of a one-dimensional (1D) deformation. The wave distribution inside the medium propagates without dispersion or attenuation. The basic equations are obtained in a non-dimensionalized case. The hole charge carrier, displacement, thermal, and plasma waves are coupled due to thermal variations. The Laplace transform method has been applied to solve the coupled governing equations. Some boundary conditions are applied to the interface adjacent to the vacuum to obtain the main physical quantities analytically in the Laplace domain. The inversion of the Laplace transform is applied with a numerical method to obtain the complete solutions in the time domain for the basic physical fields in this phenomenon. The consequences of thermoelasticity, the phase lag (relaxation time) of the temperature gradient, and the phase lag of the heat flux are graphically derived and explained in comparison to silicon and germanium semiconductor materials.

Wannier Diagrams for Semiconductor Artificial Graphene

Quantum transport has been simulated in hexagonal semiconductor lattices of antidots with a period of 80 nm and short-range disorder. Wannier diagrams, i.e., DoS(n, B) maps of the density of states, where n is the electron density and B is the magnetic field strength, have been calculated for several potential modulation amplitudes comparable to or much larger than the Fermi energy. Deep dips in the maps of the density of states have the form of rays with positive, zero, and negative slopes. In addition to the fan of the rays separating the first and second, as well as the second and third Landau levels, the maps include rays that are parallel to them and are shifted in n and B by integers of the characteristic electron density n0 and the characteristic magnetic field strength B0, respectively. It has been shown that the sign and magnitude of the slope of the rays in the density of states correspond to the centers of the plateaus of quantized Hall resistances Rxy. The lattice is brightly manifested in the Rxy(n, B) maps as the replicas of the first and second plateaus in Rxy and as oscillations of Rxy between negative and positive values at a fixed magnetic field or a fixed electron density, which indicates the interchange between the hole and electron charge carriers.

Hall effects of c-axis-oriented Mg1−xAlxB2 thin film

We synthesized c-axis-oriented Mg1-xAlxB2 thin film on an Al buffered layer of c-cut Al2O3 substrate via hybrid physical–chemical vapor deposition (HPCVD) and measured the longitudinal and Hall resistivities in the ab-plane. X-ray diffraction (XRD) showed the shift of the (000l) MgB2 peaks to higher 2θ values, indicating that Al was substituted for Mg. The 185-nm Mg1-xAlxB2 showed a critical temperature (Tc) of 26.8 K with a broadened transition width of approximately 11 K. In the normal state, the Hall coefficient was positive and decreased as the temperature increased. At T=100K, Hall coefficient (RH) is 18.97×10-11 m3/C, from which the hole charge carrier density (nhole) was determined to be 3.29×1022 holes/cm3. The suppression of nhole compared to pure MgB2 of approximately 2×1023 holes/cm3 supported the hypothesis that Al3+ substitutes to Mg2+. In the superconducting state, universal Hall scaling behavior with a constant β of 1.7±0.2 was observed due to the appearance of Al impurities.

A Novel Photo Elasto-Thermodiffusion Waves with Electron-Holes in Semiconductor Materials with Hyperbolic Two Temperature

In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically.