Hole Burning Of Eu3 Research Articles

Highly stable persistent spectral hole burning in Eu3+ ions doped oxy-fluoride glasses of 30CaF2–10Al2O3–60B2O3

High temperature persistent spectral hole burning up to room temperature has been observed in Eu3+ ions doped oxy-fluoride glasses with a composition of 30CaF2–10Al2O3–60B2O3 (mol%) melted in a reducing atmosphere. The hole stability was studied through light-induced hole refilling and temperature cycling experiments. The burned holes survive thermal cycling to 300K due to a high barrier height of 0.69eV in the sample.

Persistent Spectral Hole Burning in Eu3+-doped Calcium Oxide- and Calcium Fluoride-based Aluminoborate Glasses

Abstract Eu3+-doped oxyfluoride glasses with composition of 30CaF2–10Al2O3–60B2O3 (mol %) and oxide glasses of 30CaO–10Al2O3–60B2O3 (mol %) were prepared in a reducing atmosphere. The persistent spectral hole burning (PSHB) was characterized over a temperature range from 10 to 300 K, and the hole-burning efficiency between Eu3+-doped glass matrix of 30CaF2–10Al2O3–60B2O3 and 30CaO–10Al2O3–60B2O3 was compared.

Persistent spectral hole burning in chalcohalide glasses doped with Eu3+

Efficient persistent spectral hole burning in Eu3+-doped sulfide glasses was observed with the addition of CsBr or KBr. Holes in these glasses showed high initial growth rates, thermal barrier heights, and low relaxation rates. It was also possible to form independent multiholes on the inhomogeneously broadened absorption spectrum. One-photon absorption of the burning light and corresponding reduction of Eu3+ into Eu2+ via interaction with local conduction (or charge transfer) bands are the main processes for hole burning.

Spectral hole burning in Eu3+-doped highly porous gamma -aluminum oxide.

Transient and persistent spectral holes were burned in the $^{7}F_{0}\ensuremath{-}^{5}D_{0}$ transition of ${\mathrm{Eu}}^{3+}$ ions in macromonolithic transparent porous nanocrystalline $\ensuremath{\gamma}$-${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$ produced by sol-gel technology. An unusual temperature dependence of the transient hole width was observed that differs markedly from that in either crystalline or disordered systems. This temperature dependence is explained in terms of Raman processes involving sizeresonant vibrations of the nanoparticles comprising the structure. Possible mechanisms of hole burning are suggested.