High-speed Transimpedance Amplifier Research Articles

Low-noise and high-speed trans-impedance amplifier for nanopore sensor.

The small current detection circuit is the core component of the accurate detection of the nanopore sensor. In this paper, a compact, low-noise, and high-speed trans-impedance amplifier is built for the nanopore detection system. The amplifier consists of two amplification stages. The first stage performs low-noise trans-impedance amplification by using ADA4530-1, which is a high-performance FET operational amplifier, and a high-ohm feedback resistor of 1 GΩ. The high pass shelf filter in the second stage recovers the higher frequency above the 3 dB cutoff in the first stage to extend the maximum bandwidth up to 50 kHz. The amplifier shows a low noise below sub-2 pA rms when tuned to have a bandwidth of around 5 kHz. It also guarantees a stable frequency response in the nanopore sensor.

A 10-Gb/s Inductorless Low-Power TIA With a 400-fF Low-Speed Avalanche Photodiode Realized in CMOS Process

Compared with SiGe technology, the limits of low transition frequency and low transconductance per unit current of CMOS technology result in poor noise, narrow bandwidth, and high power consumption in high-speed transimpedance amplifiers. The aforementioned issues are further exacerbated while using a low-speed low-cost photodiode. In this study, an equalization technique is proposed to increase the feedback resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {R_{F}}$ </tex-math></inline-formula> , achieving low noise and bandwidth extension of the chip. A novel inductorless bandwidth extension technique is proposed to increase the bandwidth of high-speed channel by 37.5%. In addition, a new current reuse technique is proposed to inject the output stage’s tail current into the input stage to achieve a high gain, saving power consumption by 20%. We achieve 10-Gb/s operation with a 400-fF avalanche photodiode (APD) using 65-nm CMOS technology. The bandwidth is 6.8 GHz, the transimpedance gain is 66 dB <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol{\Omega }$ </tex-math></inline-formula> , the average input-referred noise current is 11.9 pA/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\surd $ </tex-math></inline-formula> Hz, and the average sensitivity is −22.4 dBm at a BER of 1e−12. The SF-TIA chip takes up 0.56 mm2 and consumes 26 mA from a 3.3-V supply.

The Design of a Transimpedance Amplifier [The Analog Mind

High-speed transimpedance amplifiers (TIAs) serve in the front end of optical communication receivers (RXs). Despite or because of their simple topologies, TIAs pose rigid tradeoffs among their gain, noise, and bandwidth (BW).

Chip-Level GHz Capable Balanced Quantum Homodyne Receivers

We present a design of balanced homodyne receivers suitable for ultra-low noise quantum applications such as continuous-variable quantum key distribution and quantum random number generation. For best noise and bandwidth performance a die-level low-parasitic photodiode together with a low-noise high-speed transimpedance amplifier are explored together with a planar lightwave circuit splitter chip serving as a photomixer. Bandwidths of 750 MHz and 2.6 GHz were accomplished while maintaining optimum noise performance, as evidenced by very high quantum-to-classical noise ratios of 26.8 and 18.6 dB, respectively. A common-mode rejection ratio of at least 40 dB was achieved for a frequency range of up to 1 GHz. Its application for continuous-variable quantum key distribution was evaluated by means of estimations under a strict untrusted receiver assumption, showing its potential for generating up to 43 Mbit/s secure-key rate over a reach of 10 km, whereas up to 100 Mbit/s could be supported at shorter reaches. Moreover, the high quantum-to-classical clearance values can enable high quality quantum random number generation at Gb/s rates. The multi-purpose operation of the designed balanced receivers for classical communications was examined showing reception sensitivities of −55.8 and −52.6 dBm at 500 Mbit/s and 1 Gbit/s quadrature phase shift keying transmission, respectively, using the 750 MHz receiver. The faster 2.6 GHz receiver enabled 10 Gbit/s duobinary transmission at −14.8 dBm sensitivity.

Design and Simulation of Low Power Differential Transimpedance Amplifier Using Degenerations Capacitors

In today’s internet-connected culture, high-speed data transmission techniques are in high demand. Optical communication is most used techniques for data transmission with speed. High-speed amplifiers are needed, nevertheless, to obtain high gains and transform current signals into voltage gains. This is accomplished via transimpedance amplifiers, a crucial component of optical receivers. In this work, a high-speed transimpedance amplifier with negative degeneration capacitors and complete differential operation is built. The proposed design has a transimpedance gain of approximately 52.4 dB at 19.8 GHz and an average input-referred noise current of roughly 23.3 pA/√Hz. The suggested circuit also has an high gain, and low input-referred noise, excellent bandwidth all of which contribute to its low power consumption of roughly 215 uW. This makes it appropriate for Internet of Things (IoT) devices, smart devices, mobile phones, laptops, and other computer peripherals.

Overcoming the Transimpedance Limit: A Tutorial on Design of Low-Noise TIA

Noise probably the single most important performance metric of the high-speed transimpedance amplifier (TIA), which directly sets the sensitivity of optical receiver. The transimpedance limit which dictates the maximum achievable transimpedance gain of the TIA also turns out to fundamentally limit the TIA noise performance. In this tutorial, we analyze and explore two circuit design approaches to overcome the transimpedance limit. The first approach (Type I) realizes a divide-and-conquer methodology to separate the noise-bandwidth problem and solve them individually. The second approach (Type II) employs a multi-stage stagger-tuned amplifier. Both approaches can overcome the transimpedance limit, forming an effective toolkit for the design of low-noise high-speed TIA for high-sensitivity CMOS optical receivers in current and future applications.

A High-Dynamic-Range Counting−Analog Detector System Based on a Secondary Electron Multiplier

A high-dynamic-range counting−analog detector system based on a secondary electron multiplier (SEM) is described. The current-to-voltage converter, which is common to both channels, includes a high-speed transimpedance amplifier (TIA) and an automatic bias-correction circuit. This circuit also rejects 1/f noise of the TIA in the 0−2.3 Hz passband of the digital lowpass filter of a 24-bit analog-to-digital converter (ADC) in the electrometric channel. As a result, the noise-free code resolution of the entire channel, which is 18.5 bits, is determined only by the ADC noise. A number of circuit solutions are proposed to minimize the number of circuit components, which have made it possible to place the detector system board in the measuring head of the SEM and thereby reduce the stray capacitances that limit the response speed of the TIA. The maximum counting rate of the pulse-counting channel is 7 ×107 cps and is determined by the time resolution of the SEM. The problems of optimizing the supply voltages of the circuit and the gain of the SEM in the counting−analog mode are considered. The developed system is one of the units of the mass-spectrometry system for the isotope study of noble gases. The SEM-input-referred measurement ranges of the system are as follows: from 1 × 10–16 to 1.2 × 10−11 A at a resolution of 3 × 10−17 A or better for the electrometric channel; from 5 × 10−2 to 5 × 107 ions/s for the pulse-counting channel without counting losses and with the allowance for the SEM dark current; and from 1 × 10–20 to 1.2 × 10−11 A for the entire system. Due to the wide overlap of the measurement ranges, it is possible to perform mutual verification of data obtained in different modes.

High‐speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS

A high-speed transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with a novel bandwidth and power consumption tuning approach is presented. By tuning the circuit bandwidth continuously from 61.6 to 12.8 GHz during runtime, the power consumption of the main amplifier can be reduced by a factor of around 5. Leading to a power consumption reduction of 40% for the TIA core. Despite the power reduction the gain is kept constant at 69.8 dBΩ by utilising field effect transistors as steerable resistors. The high maximum bandwidth admits data rates up to more than 88 Gbit/s with a power consumption of only 78.1 mW. This yields to a very good energy efficiency of 0.888 pJ/bit and a very high gain bandwidth product of 189.8 kΩGHz at the same time. The mentioned performance parameters in conjunction with the bandwidth and power consumption scalability make the TIA well suited for energy-efficient high-speed optical interconnects, e.g. in future high performance computing platforms.

In brief

PAGE 126 Researchers in Australia have overcome a common limitation of out-of-phase power dividers. Typically in these dividers, the resistor cannot provide effective isolation as it will absorb the out-of-phase signals. To address this, the team introduced slots placed under the tightly coupled lines at the top layer, which couples the reflected signals from the output ports in an in-phase manner. PAGE 154 A high-speed transimpedance amplifier with an efficient bandwidth and power consumption tuning approach has been proposed by researchers in Germany. Optical interconnects are usually optimised to provide the highest data rate constantly – without concern for the varying use over time – but the presented approach can adapt performance to reduce power consumption by a factor of five while keeping the transimpedance gain constant. Out-of-phase power dividers finally achieve effective isolation PAGE 100 Researchers in Korea have developed a liquid-metal antenna that can help to mitigate the effects of the hand in mobile phones. The use of liquid metal allows the antenna's frequency to be tuned – thus to reduce the hand effect – by adjusting the shape or dimensions of the antenna. Tuning interconnect bandwidth can save power while not affecting overall performance PAGE 122 Researchers in China have presented a coplanar waveguide bandpass filter with controllable transmission zeros. This control is achieved by using separated electric and magnetic coupling paths, such that via hole is not required, and the resulting waveguide is integrable with lumped elements and other microwave components. The length of the antenna is adjusted to deal with the presence of the hand in mobile phones PAGE 152 Through silicon vias (TSVs) are used as interconnects in 3d integrated circuits and as such are becoming vital to modern circuit design. However, researchers in Egypt have demonstrated that the parasitic effects of the TSVs and the inhomogeneous nature of the medium result in unreliable results in the delay performance of digital circuits Separating electric and magnetic coupling paths in coplanar waveguides results in improved tenability Cross-section of a TSV: the design results in parasitic behaviour and this is exacerbated by inhomogeneity

Monolithically integrated avalanche photodiode receiver in 0.35 μ m bipolar complementary metal oxide semiconductor

We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200- μ m -diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35- μ m silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120 A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is 500 fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550 mV pp and the overall transimpedance is 260 kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of −30.3 dBm at a bit error rate −9 .

PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication

In this paper, an optoelectronic integrated receiver chip including five PIN photodiodes will be presented. A large 200-μm diameter photodiode connected to a high-speed transimpedance amplifier works as a 3-Gb/s receiver for optical wireless communication. Four surrounding photodiodes allow for the adjustment of the incoming laser ray. The complete chip was realized in a silicon 0.35-μm BiCMOS technology to benefit from the available intrinsic zone in this technology. Due to this intrinsic zone and an antireflection coating, the responsivity reaches a value of more than 0.5 A/W for wavelengths from 630 to 760 nm. Furthermore, the capacitance of the center photodiode is less than 0.6 pF for reverse bias voltages larger than 3 V. For proof of concept, a steerable and adjustable light source was built based on a micro-electro-mechanical system mirror, on a focusing unit, and on a direct modulated vertical cavity surface emitting laser with a wavelength of 680 nm. The complete system is capable of establishing a 3-Gb/s data transfer over a distance of 19 m at a BER of <;10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> , and over a distance of 18 m at a BER of <;10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> .

6 GHz transimpedance amplifier for optical sensing system in low-cost 0.35 µm CMOS

A high-speed transimpedance amplifier (TIA) has been designed and implemented in a low cost 0.35 µm CMOS technology. Combining the techniques of regulated cascode input stage, current shunt feedback and inductive-series peaking, the TIA achieves a transimpedance gain of 51 dBΩ and 3 dB bandwidth of 6 GHz, in the presence of a photodiode capacitance of 0.6 pF. This is believed to be the fastest TIA ever reported in 0.35 µm CMOS technology.

A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers

A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMICs) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-μm GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.