High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magnetoelectric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/Fe3O4 composite developed in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a Hdc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.
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