High-performance Devices Research Articles

Sensitive Self-Driven Single-Component Organic Photodetector Based on Vapor-Deposited Small Molecules.

Typically, organic solar cells (OSCs) and photodetectors (OPDs) comprise an electron donating and accepting material to facilitate efficient charge carrier generation. This approach has proven successful in achieving high-performance devices but has several drawbacks for upscaling and stability. This study presents a fully vacuum-deposited single-component OPD, employing the neat oligothiophene derivative DCV2-5T in the photoactive layer. Free charge carriers are generated with an internal quantum efficiency of 20 % at zero bias. By optimizing the device structure, a very low dark current of 3.4 · 10-11Acm-2 at -0.1V is achieved, comparable to the dark current of state-of-the-art bulk heterojunction OPDs. This optimization results in specific detectivities of 1· 1013Jones (based on noise measurements), accompanied by a fast photoresponse (f-3dB = 200kHz) and a broad linear dynamic range (>150dB). Ultrafast transient absorption spectroscopy unveils that charge carriers are already formed at very short time scales (<1ps). The surprisingly efficient bulk charge generation mechanism is attributed to a strong electronic coupling of the molecular exciton and charge transfer states. This work demonstrates the very high performance of single-component OPDs and proves that this novel device design is a successful strategy for highly efficient, morphological stable and easily manufacturable devices.

Achieving Closed-Loop Recycling of a Semi-Conjugated Polymer Through the Incorporation of Ester Linkers Along the Backbone.

Design strategies to achieve degradation and ideally closed-loop recycling of organic semiconductors have attracted great interest in order to minimize the electronic waste (E-waste). In this work, three ester-incorporated monomers were synthesized by the names of Thiophene-Ester-Ethylene-Thiophene (TEET), Thiophene-Ester-Methylene-Thiophene (TEMT), and Thiophene-Ester-Thiophene (TET), which were co-polymerized via Stille polycondensation with a benzodithiophene (BnDT) π-conjugated unit to yield a series of ester-incorporated polymers: PBnDT-TEET, PBnDT-TEMT, and PBnDT-TET. While the ester-only linker can maintain some extended conjugation in PBnDT-TET, the other two ester linkers having conjugation breaking units result in isolated conjugated segments in PBnDT-TEET and PBnDT-TEMT, evidenced by UV-Vis and CV results. This yields an improved photovoltaic performance of PBnDT-TET compared to PBnDT-TEET. While all three polymers can depolymerize under methanolysis, the alternating co-polymer PBnDT-TEET demonstrates the highest recyclability potential with a single dimethyl ester-functionalized product with an excellent 92 % isolated yield, which can then be repolymerized to reobtain PBnDT-TEET with a 36 % yield. This work provides a framework towards achieving recyclable organic semiconductors to reduce E-waste. Although the incorporation of ester linkers allowed for closed-loop recycling, the low solar cell efficiency of PBnDT-TEET highlights the significant challenge in achieving both recycling and high device performance.

Bright Electrically Contacted Circular Bragg Grating Resonators with Deterministically Integrated Quantum Dots.

Cavity-enhanced emission of electrically controlled semiconductor quantum dots (QDs) is essential in the development of bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement designs for ridge-based electrically contacted QD-CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single QD-CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to 30.4(3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE > 50%. Additionally, the developed quantum light sources yield single-photon purity reaching 99.2(2)% and photon indistinguishability of 75(5)% under quasi-resonant p-shell excitation. Our results present high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, which are relevant for the development of photonic quantum information systems such as complex quantum repeater networks.

Design and research of high voltage β-Ga2O3 /4H-SiC heterojunction LDMOS

Abstract In recent years, gallium oxide (Ga2O3), one of the ultra-wide band-gap semiconductor materials, has been regarded as one of the most promising materials in the field of high-voltage and high-power electronic devices in the future because of its unique electrical properties and low preparation cost. However, it is difficult for β-Ga2O3 materials to form effective P-type doping, so the PN junction is not formed in most of its power devices, which greatly limits the improvement of its voltage resistance. A novel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) is proposed to realize a junction β-Ga2O3 power device and improve the voltage resistance performance of β-Ga2O3 power devices. In this device, a β-Ga2O3 power device with a junction is realized by using P-type 4H-SiC to form a PN junction with N-type β-Ga2O3, and the voltage resistance of the β-Ga2O3 power device is improved. Sentaurus TCAD software was used to simulate the device structure and electrical performance. The device is optimized by adjusting the length of the drift zone, drift zone concentration, SiC channel concentration, and gate oxide thickness. Optimized, the device exhibits a positive threshold voltage of 3.42 V, a breakdown voltage of 2203 V, a specific on-resistance of 7.80 mΩ·cm2, and a power figure of merit of 622 MW/cm2. The results show that the heterojunction device is significant for realizing high-performance junction β-Ga2O3 power devices.

Ultrathin Transistors and Circuits for Conformable Electronics.

Adapting electronics to perfectly conform to nonplanar and rough surfaces, such as human skin, is a challenging task, which could open up new applications in fields of high economic and scientific interest, ranging from health to robotics, human-machine interface, and Internet of Things. The key to success lies in defining a technology that can lead to ultrathin devices, exploiting ultimately thin materials, with high mechanical flexibility and excellent electrical properties. Here, we report a hybrid approach for the development of high-performance, ultrathin and conformable electronic devices, based on the integration of semiconducting transition metal dichalcogenides, i.e., MoS2, with organic gate dielectric material, i.e., polyvinyl formal (PVF) combined with inkjet printed PEDOT:PSS electrodes. Through this novel approach, transistors and simple digital and analogue circuits are fabricated by a sequential stacking of ultrathin (nanometer) layers on a few micrometers thick polyimide substrate, which guarantees the high flexibility mandatory for the targeted applications.

Bending and sensing performances of electro-ionic soft actuators based on carboxylated cellulose nanofibers reinforced with graphene nanoplatelets

Abstract Soft robots not only possess greater degrees of freedom and the capability for continuous transformation, but they also offer exceptionally high safety in human-robot interactions, avoiding harm to the human body. Soft actuators are essential for developing high-performance soft robots, offering significant bending deformation, rapid response times, and prolonged operational capabilities. Herein, we present an ionic electroactive soft actuator based on functional cellulose nanofibers, graphene nanoplatelets, and ionic liquid. The proposed actuator achieved a large displacement about ±8 mm under 2.0 V at 0.1 Hz, with long working stability (98% of initial peak displacement maintained after 1260 cycles of cycling). The human-robot interaction applications of this actuator were explored by simulating human fingers. More importantly, the static and dynamic sensing performances of the actuator were investigated, finding that it generated a sensing voltage of 0.37 V at a vibration displacement of only 1.75 mm. The designed actuator provides a promising approach for developing high-performance soft robots, soft actuators, flexible sensors, and flexible active devices.

Insights into strain dependent lattice thermal conductivity of α - and κ -Ga2O3

α- and κ-Ga2O3 are promising candidates for high-performance devices such as high-power electronics, but the low thermal conductivity (TC) severely hinders its application. Strain inevitably exists in practical Ga2O3-based devices due to the mismatch of lattice structure and thermal expansion brought by heteroepitaxial growth, and it significantly influences the thermal properties of α- and κ-Ga2O3. By employing first-principles calculations and the phonon Boltzmann transport equation, we have studied the TC at the induced strain and optimized strain axis in free states and 16 different strain states. The TC at the induced strain and optimized strain axis generally decreases with increasing strain. Under −4% XZ-axes biaxial compressive strain, the kzz of α-Ga2O3 can increase to ∼1.7 times its original value, while under −2% XY-axes biaxial compressive strain, the kxx of κ-Ga2O3 can increase to 2.8 times its original value. The improvement of thermal transport properties is attributed to the increase in phonon group velocity and relaxation time caused by the phonon hardening and decrease in three-phonon scattering channels, respectively. However, we observed an exception: under +4% X-axis tensile strain, kyy of α-Ga2O3 increased by 1.1 times. Moreover, atomic bond analysis revealed that under XY-direction strain, the ICOHP values for α-Ga2O3 are −3.94 eV (at −4% strain), −3.76 eV (unstrained state), and −3.63 eV (+4% strain). This discovery elucidates the origin of phonon hardening under compressive strain, indicating that strengthened bonds enhance phonon transport. This study provides essential insights into the mechanisms of α- and κ-Ga2O3 TC under different strains.

"Synergistic Hybridization of Mn-MOF@rGO and Ti3C2 for High-Performance Supercapattery Devices and Hydrogen Evolution Reaction"

The burgeoning interest in two-dimensional (2D) materials stems from their heightened storage capacity and superior conductivity. Here, we synthesized a metal-organic framework of manganese (Mn-MOF) and introduced reduced graphene oxide (rGO) doping into this heterostructure using a hydrothermal method. Subsequently, Ti3C2Tx MXene was prepared via a template method. The Mn-MOF@rGO was then combined with Ti3C2Tx MXene in a 50/50 wt% ratio using hydrothermal techniques, and their structural and electrochemical characteristics were evaluated. In 3-electrode measurements, the MnMOF@rGO/Ti3C2Tx composite conductor exhibited a precise capacity of 2645 C/g (5.29 C/cm3) at 1.8 A/g. Furthermore, a hybrid device termed a supercapattery was fabricated employing MnMOF@rGO/Ti3C2Tx along with activated carbon (AC) composite electrodes, demonstrating remarkable energy density of 67 Wh/kg and an impressive power density of 880 W/kg. After 8,000 cycles, the electrode exhibited 84% capacity retention and maintained 92% columbic efficiency. In the hydrogen evolution reaction (HER), the MnMOF@rGO/Ti3C2Tx composite displayed a minimal Tafel slope of 54.65 mV/dec. These two-dimensional composite electrodes offer novel avenues for the advancement of high-performance energy device.

High-performance light-emitting devices with hole injection layer based on in situ doping for immersive near-eye display

High-performance light-emitting devices with hole injection layer based on in situ doping for immersive near-eye display

Metasurface-enabled 3D imaging via local bright spot gray scale matching using the structured light dot array.

Three-dimensional (3D) imaging is widely utilized in various applications, such as light detection, autonomous vehicles, and machine vision. However, conventional 3D imaging systems often rely on bulky optical components. Metasurfaces, as next-generation optical devices, possess flexible wavefront modulation capabilities and excellent combination with computer vision algorithms. Here, we propose a large field-of-view (FOV) structured light dot array projection device based on a metasurface, covering a 2π-FOV, for projecting coded point clouds in Fourier space. We explore a local bright spot gray scale matching algorithm for depth extraction, enabling 3D imaging. This algorithm simplifies the data processing flow and optimizes depth extraction and feature matching processes through a customized region gray scale comparison. As a result, it effectively reduces computational complexity and enhances tolerance to image quality fluctuations. The proposed approach provides new possibilities for developing compact and high-performance planar 3D optical imaging devices, which will drive the advancement of fields such as computer vision and artificial intelligence.

Transition metal-assisted layer-by-layer binder free deposition for high-performance energy storage devices

Transition metal-assisted layer-by-layer binder free deposition for high-performance energy storage devices

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal.

Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin-orbit torques (SOT) induced by the in-plane current in Fe3GeTe2 (FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for "writing" and "reading". Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM).

Nanomaterials in electronics: Advancements and challenges in high-performance devices

Nanomaterials, such as graphene, carbon nanotubes, and metal oxides, are revolutionizing the field of electronics by enabling the development of high-performance devices. This study provides a comprehensive overview of the synthesis, characterization, and application of these nanostructured materials. The unique properties of nanomaterials, including exceptional electrical conductivity, thermal management capabilities, and potential for device miniaturization, offer significant advantages over traditional materials. Graphene, for instance, exhibits remarkable electrical and thermal conductivity, making it an ideal candidate for applications in transistors and sensors. Carbon nanotubes, known for their strength and conductivity, enhance the performance of various electronic components, while metal oxides play a crucial role in semiconductor applications. Despite these advancements, several challenges remain. Issues related to scalability hinder the large-scale production of nanomaterials, while reproducibility concerns affect the reliability of devices fabricated from these materials. Moreover, the environmental impact of synthesizing and disposing of nanomaterials raises significant ethical considerations that must be addressed as the field progresses. This paper aims to provide insights into the current research trends and potential future directions, highlighting the need for sustainable practices in the synthesis and application of nanomaterials in electronics. By addressing these challenges, we can pave the way for the next generation of high-performance electronic devices that are not only efficient but also environmentally responsible.

High-efficiency terahertz surface plasmon metacoupler empowered by bilayer bright–dark mode coupling

Conversion from free-space waves to surface plasmons has been well studied as a key aspect of plasmonics. In particular, efficient coupling and propagation of surface plasmons via phase gradient metasurfaces are of great current research interest. Hereby, we demonstrate a terahertz metacoupler based on a bilayer bright–dark mode coupling structure attaining near-perfect conversion efficiency (exceeding 95%) without considering absorption loss of the materials and maintaining a high conversion level even when the area of the excitation region changes. To validate our design, a fabricated metacoupler was assessed by scanning near-field terahertz microscopy. Our findings could pave the way for developing high-performance plasmonic devices encompassing ultra-thin and compact functional devices for a diverse range of applications, especially within the realm of high-speed terahertz communications.

Probing Nanoscale Charge Transport Mechanisms in Quasi-2D Halide Perovskites for Photovoltaic Applications.

Quasi-2D layered halide perovskites (quasi-2DLPs) have emerged as promising materials for photovoltaic (PV) applications owing to their advantageous bandgap for absorbing visible light and the improved stability they enable. Their charge transport mechanism is heavily influenced by the grain orientation of their crystals as well as their nanostructures, such as grain boundaries (GBs) and edge states─the formation of which is inevitable in polycrystalline quasi-2DLP thin films. Despite their importance, the impact of these features on charge transport remains unexplored. In this study, we conduct a detailed investigation on polycrystalline quasi-2DLP thin films and devices, carefully analyzing how grain orientation and nanostructures influence charge transport. Employing nondestructive atomic force microscopy (AFM) topography, along with transient absorption spectroscopy (TAS) and grazing-incidence wide-angle X-ray scattering (GIWAXS), we obtained significant insights regarding the phase purity, crystallographic information, and morphologies of these films. Moreover, our systematic investigation using AFM-based techniques, including Kelvin probe force microscopy (KPFM) and conductive AFM (c-AFM), elucidates the roles played by GBs and edge states in shaping charge transport behavior. In particular, the local band structure along the GBs and edge states within both vertical and parallel grains was found to selectively repel electrons and holes, thus facilitating charge carrier separation. These findings provide perspectives for the development of high-performance quasi-2DLP PV devices and highlight potential approaches that can leverage the intrinsic properties of quasi-2DLPs to advance the performance of perovskite solar cells.

Enhanced UV Light Responsivity in -Oriented 2D Perovskites Realized by Pressure-induced Ultrafast Exciton Transport.

Two-dimensional (2D) <100>-oriented perovskites exhibit superior optoelectronic properties, offering significant potential in photovoltaic, light-emitting, and photodetection applications. Nevertheless, their enlarged interlayer spacing restricts longitudinal carrier transport, thereby limiting its potential applications. While <110>-oriented 2D perovskites provide a prospective solution with their compact interlayer spacing, their inherent structure, characterized by octahedra tilting, indirectly hinders carrier transport due to the generation of self-trapped excitons (STEs) caused by strong electron-phonon coupling. Here, we adeptly regulate the photoluminescence (PL) from STEs to free excitons (FEs) emission within the 2D <110>-oriented (API)PbBr4 single crystal through structure optimization under pressure treatment. Besides, we observed anisotropic FE transport with an anisotropy ratio of 4.97. The exciton mobility reaches a peak of 93.6 cm2V-1s-1 at 2.7 GPa, a value comparable to those of their three-dimensional (3D) counterparts, which is attributed to a reduction in electron-phonon coupling and exciton reduced mass. Additionally, this ultrafast exciton transport significantly enhances UV light responsivity, exhibiting an increase of approximately 5000 times at 2.7 GPa in comparison to ambient conditions. These findings highlight the prospective application of 2D <110>-oriented perovskites in high-performance optoelectronic devices through intrinsic structural modulation.

Thermally tunable add-drop filter based on valley photonic crystals for optical communications

Abstract Valley photonic crystals (VPCs) provide an intriguing approach to suppress backscattering losses and enable robust transport of light against sharp bends, which could be utilized to realize low-loss and small-footprint devices for on-chip optical communications. However, there are few studies on how to achieve power-efficient tunable devices based on VPCs, which are essential for implementing basic functions such as optical switching and routing. Here, we propose and experimentally demonstrate a thermally tunable add-drop filter (ADF) based on VPCs operating at telecommunication wavelengths. By leveraging the topological protection of the edge state and the distinct property of negligible scattering at sharp bends, a small footprint of 17.4 × 28.2 μm2 and a low insertion loss of 2.7 dB can be achieved for the proposed device. A diamond-shaped microloop resonator is designed to confine the light and enhance its interaction with the thermal field generated by the microheater, leading to a relatively low power of 23.97 mW needed for switching the output signal from one port to the other. Based on the thermally tunable ADF under the protection of band topology, robust data transmission is implemented with an ultrahigh data rate of 132 Gb/s. Our work shows great potential for developing high-performance topological photonic devices with the thermally tunable silicon-based VPCs, which offers unprecedented opportunities for realizing topologically protected and reconfigurable high-speed datalinks on a chip.

Zinc cobalt sulfide with carbon (graphene oxide and CNT) based nanocomposite as positive electrode for asymmetric coin cell supercapacitors

Abstract The world dependence on portable electronic devices has increased the demand for high-performance energy storage devices. The use of transition metal sulfides as faradaic electrode materials for electrochemical energy storage is rapidly increasing due to their high energy density. Herein Zinc Cobalt Sulfide (ZCS) with graphene oxide (GO) and carbon nanotubes (CNT) were used to create an interconnected ZCS composite network using a solvothermal technique. The materials were characterized by utilizing XRD, FT-Raman, TGA, FESEM/EDX, XPS, and BET. The electrochemical performance of the materials was examined using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS). The prepared electrodes exhibited both pseudocapacitor behavior and double-layer capacitor behavior, indicating the hybrid nature. Furthermore, All the electrode ZCS, ZCS/GO, ZCS/CNT, and ZCS/GO/CNT electrodes demonstrated higher capacitance behavior, with values of 420, 551, 585 and 811 F g−1 at 1 A/g. Among these ZCS/GO/CNT electrode exhibits outstanding electrochemical properties, with a notable retention of 81.08% at 10 Ag−1 because Combining ZCS nanoparticles with interconnected GO and CNT provides excellent electronic conductivity and stability. The assembled ZCS/GO/CNT//graphene oxide asymmetric coin cell (ACC) supercapacitor showed a high energy density of 33.3 Wh kg–1 at a power density of 624 W kg–1. The 3D nanostructure of ZCS/GO/CNT/Graphene oxide has great potential for developing foldable energy storage devices.

Customizing Biochar Formulations: Enabling Sustainable and High-Performance Electrochemical Energy Storage Devices

Customizing Biochar Formulations: Enabling Sustainable and High-Performance Electrochemical Energy Storage Devices

Hybrid topology optimization combining simulated annealing for designing unpolarized high-efficiency freeform metasurface in-coupler for augmented reality waveguide

High-efficiency in-couplers with unpolarized responses are crucial for the performance of waveguide augmented reality displays. Freeform quasi-3D metasurfaces (FQ3DM), which integrate freeform metasurfaces with multilayer films, is one possible solution to achieve this. However, the performance of FQ3DM is limited by the lack of inverse design algorithms capable of optimizing its overall structure. In this work, we proposed a hybrid topology optimization combining simulated annealing (HTO-SA) algorithm that alternates between topology optimization and simulated annealing to find the global optimum for both the shape and thickness of FQ3DM. With the HTO-SA algorithm, we designed an unpolarized high-efficiency in-coupler that achieves an average efficiency of 90% across a 20° field-of-view for both transverse electric and transverse magnetic polarization. We envision that our proposed approach can be generalized to the design of high-performance diffractive optical devices.