High Confinement Factor Research Articles

Sodium-based plasmonic waveguides with high confinement factors and ultra-low gain thresholds.

The noble metal-based hybrid plasmon mode features low loss and strong field localization, making it widely applicable in the field of nanophotonic devices. However, due to the high loss of noble metals, the gain threshold is unacceptably high, usually larger than 0.1 µm-1. Here we present a hybrid plasmonic waveguide consisting of a SiO2 layer coated Na nanowire and a hexagonal semiconductor nanowire. Based on the high performance of the proposed waveguide, the Purcell factor exceeding 120 and a confinement factor above 90% are achieved, leading to an ultra-low gain threshold of 0.02117 µm-1. In addition, the proposed waveguide exhibits an extremely low cross talk, making it highly suitable for applications in compact photonic integrated devices. The proposed waveguide may contribute to the development of low-threshold nano-lasers and promote other applications in nanophotonics.

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications.

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III-V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III-V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 μm, 70 μm, and 40 μm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO2 bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO2 bottom cladding layer effectively eliminates the influence of the substrate's larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs.

Extending the propagation length of graphene plasmons via nonlinear frequency conversion

Graphene plasmons (GPs) are broadband and electrically tunable mid-infrared (MIR)/terahertz (THz) excitations, exhibiting high confinement factors exceeding two orders of magnitude. Such highly confined modes are extremely attractive for nonlinear frequency conversion owing to the large inherent field enhancement. However, this high confinement is also accompanied by losses, and together with the centrosymmetric nature of graphene practical usage of its properties in second-order nonlinear processes remains hindered. In this paper, we introduce an approach for realizing quasi-phase-matching (QPM) of propagating GPs, by placing the graphene on an orientationally patterned GaAs substrate—a transparent material in the MIR/THz range with a large second-order nonlinear coefficient. We analyze the complete frequency/Fermi-level space for QPMed second-harmonic generation of GPs in the MIR and THz and demonstrate GP amplification and loss compensation. We find that our approach provides extended GP propagation lengths that are more than twice larger than the state-of-the-art cryogenic temperature propagation lengths. The approach is general to all second-order nonlinear processes, such as sum and difference frequency generation, thus opening a path for efficient and electrically tunable QPM nonlinear processes at the atomic scale.

Low-threshold AlGaN-based deep ultraviolet laser enabled by a nanoporous cladding layer.

We demonstrated an AlGaN-based multiple-quantum-well (MQW) deep ultraviolet (DUV) laser at 278 nm using a nanoporous (NP) n-AlGaN as the bottom cladding layer grown on the sapphire substrate. The laser has a very-low-threshold optically pumped power density of 79 kW/cm2 at room temperature and a transverse electric (TE)-polarization-dominant emission. The high optical confinement factor of 9.12% benefiting from the low refractive index of the nanoporous n-AlGaN is the key to enable a low-threshold lasing. The I-V electrical measurement demonstrates that an ohmic contact can be still achieved in the NP n-AlGaN with a larger but acceptable resistance, which indicates it is compatible with electrically driven laser devices. Our work provides insights into the design and fabrication of low-threshold lasers emitting in the DUV regime.

Strip-loaded Mach–Zehnder interferometer for absolute refractive index sensing

This paper presents the design, fabrication, and characterization of a Mach–Zehnder interferometer (MZI) on a strip-loaded platform specifically developed for the measurement of refractive index variations in liquids. A novel approach of large opening in the sensing region enhances the sensitivity by using the analyte as the loading strip. This allows surpassing the performances of the conventional perforations and trenched-based MZIs and prevent protecting the reference arm. The implementation of this design resulted in a high confinement factor of approximately 23%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\%$$\\end{document} in the cladding, enabling an effective interaction between the evanescent field and analyte. Ethanol-water solutions with varying concentrations were used as analyte for the characterization of the device. The strip-loaded waveguide was a 200 nm TiO2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_2$$\\end{document} thin film on a silicon dioxide wafer and a 1.2 μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu $$\\end{document}m wide for 800 nm-thick nLOF resist served as loading strip. The sensing area featured a 10 μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu $$\\end{document}m wide open-ing in the loading material with a sensing length of 5 mm. The homogeneous sensitivity was experimentally determined to be 0.128, demonstrating the effectiveness of the proposed design, which enabled a refractive index change monitoring of 10-6\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{-6}$$\\end{document}.

A low-threshold single-mode higher-order topological photonic crystal nanowire array laser

A higher-order topological photonic crystal GaAs/AlGaAs/GaAs nanowire array laser based on 0D corner modes is proposed and analyzed. The structure is composed of a nanowire trivial photonic crystal sandwiched by two topological photonic crystals. Compared with the conventional deformed honeycomb lattice photonic crystal structure, an additional mode selection mechanism is introduced by adjusting the coupling strength of topological cavities formed at two topological interfaces. By optimizing the structure parameters, a large side-mode suppression ratio of 24 dB and a high-quality factor of 7935 are obtained. Due to the strong mode confinement, lasing is achievable at an ultrasmall diameter of 86 nm, with a high confinement factor of 7.96 and low threshold gain of 230 cm−1. Moreover, the laser exhibits a small beam divergence of 6.6°. This work may pave a way for the development of low-threshold single-mode miniaturized lasers.

Ultra-Wideband Mid-Infrared Chalcogenide Suspended Nanorib Waveguide Gas Sensors with Exceptionally High External Confinement Factor beyond Free-Space.

On-chip waveguide sensors are potential candidates for deep-space exploration because of their high integration and low power consumption. Since the fundamental absorption of most gas molecules exists in the mid-infrared (e.g., 3-12 μm), it is of great significance to fabricate wideband mid-infrared sensors with high external confinement factor (ECF). To overcome the limited transparency window and strong waveguide dispersion, a chalcogenide suspended nanorib waveguide sensor was proposed for ultra-wideband mid-infrared gas sensing, and three waveguide sensors (WG1-WG3) with optimized dimensions exhibit a wide waveband of 3.2-5.6 μm, 5.4-8.2 μm, and 8.1-11.5 μm with exceptionally high ECFs of 107-116%, 107-116%, and 116-128%, respectively. The waveguide sensors were fabricated by a two-step lift-off method without dry etching to reduce the process complexity. Experimental ECFs of 112%, 110%, and 110% were obtained at 3.291 μm, 4.319 μm, and 7.625 μm, respectively, through methane (CH4) and carbon dioxide (CO2) measurements. A limit of detection of 5.9 ppm was achieved for an averaging time of 64.2 s through the Allan deviation analysis of CH4 at 3.291 μm, leading to a comparable noise equivalent absorption sensitivity of 2.3 × 10-5 cm-1 Hz-1/2 as compared to the hollow-core fiber and on-chip gas sensors.

On-chip mid-infrared silicon-on-insulator waveguide methane sensor using two measurement schemes at 3.291μm.

Portable or even on-chip detection of methane (CH4) is significant for environmental protection and production safety. However, optical sensing systems are usually based on discrete optical elements, which makes them unsuitable for the occasions with high portability requirement. In this work, we report on-chip silicon-on-insulator (SOI) waveguide CH4 sensors at 3.291 μm based on two measurement schemes including direct absorption spectroscopy (DAS) and wavelength modulation spectroscopy (WMS). In order to suppress noise, Kalman filter was adopted in signal processing. By optimizing the waveguide cross-section structure, an etch depth of 220 nm was selected with an experimentally high power confinement factor (PCF) of 23% and a low loss of only 0.71 dB/cm. A limit of detection (LoD) of 155 parts-per-million (ppm) by DAS and 78 ppm by WMS at an averaging time of 0.2 s were obtained for a 2 cm-long waveguide sensor. Compared to the chalcogenide (ChG) waveguide CH4 sensors at the same wavelength, the reported sensor reveals the minimum waveguide loss and the lowest LoD. Therefore the SOI waveguide sensor has the potential of on-chip gas sensing in the mid-infrared (MIR) waveband.

Efficient multi-step coupling between Si3N4 waveguides and CMOS plasmonic ferroelectric phase shifters in the O-band.

In this paper we present a thorough simulation-based analysis for the design of multi-step couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase shifters and thick silicon nitride (Si3N4) waveguides for the O-band. The targeted plasmonic waveguides are a hybrid plasmonic waveguide (HPW) providing low propagation losses and a plasmonic metal-insulator-metal (MIM) slot waveguide offering a high confinement factor for high modulation efficiency. The proposed plasmonic platforms are formed by Copper (Cu) providing CMOS compatibility. The analysis is based on 2D-FD eigenvalue and 3D-FDTD numerical simulations targeting to identify the optimum geometries ensuring the lowest coupling losses, calculated as 1.75dB for the HPW geometry and 1.29dB for the MIM configuration. The corresponding confinement factors are 31.39% and 56.2% for the HPW and MIM waveguides, respectively.

Comparison of lasing characteristics of GaN microdisks with different structures

The lasing characteristics of optically-pumped GaN microdisks of different configurations, including microdisks with undercuts, microdisks with cladding layers and thin-film microdisks are investigated in this paper. The microdisks, fabricated from a range of epitaxial structures containing blue-light emitting InGaN/GaN multi-quantum wells grown on Si, sapphire or GaN substrates, undergo different processes to form 8 µm diameter whispering-gallery mode microdisks with different degrees of optical confinement. The microdisks have lasing thresholds ranging from 2.1–8.3 mJ cm−2 and quality factors of 1400–4200. The lasing characteristics are correlated to the material qualities, optical confinement as well as the overlap of the mode with the multi-quantum wells in the microdisk structures. The undercut microdisks benefit from high optical confinement factors but poor overlap factor, while the thin film structures have high overlap factors but low confinement due to absorption by the metallic bonding layers. The findings provide useful insight on ways to optimize GaN microdisk for improving lasing performances.

The impact of fuelling and W radiation on the performance of high-power, ITER-baseline scenario plasmas in JET-ILW

Sustained operation of high-performance, ITER-baseline scenario plasmas at the high levels of input power () required to achieve ∼15 MW of D-T fusion power in JET-ILW requires careful optimisation of the fuelling to avoid an unacceptable disruption rate due to excessive radiation, primarily from W impurities, which are sputtered by edge-localised modes (ELMs) from the divertor targets. By using a train of ELM-pacing pellets from a high-frequency pellet injector to promote regular ELMs, which flush W and other impurities from the confined plasma, such high-performance plasmas can be sustained (for ∼5 s) while maintaining a high normalised confinement factor H 98,y2 ∼ 1, which would otherwise be degraded by reducing the pedestal confinement if a higher rate of D2 gas fuelling were used instead of the pellets to mitigate the W contamination. The causes underlying the improved performance and energy confinement obtained using this combined, gas and pellet fuelling scheme is investigated here in some detail.

Metal substrate modulation for realizing a more compact whispering-gallery microcavity

The compact cavity is always conducive to the integration and application of the devices based on whispering gallery modes. However, it is a challenge to strike a balance between the pursuit of a smaller cavity and higher quality. Here, we propose a low-loss cavity by combining a microsphere with a metal substrate, thereby compressing the cavity size by 24%. In addition, the substrate-modulated cavity is found to have a higher confinement factor and Purcell factor, showing the good prospect for realizing high-performance compact lasers.

Density-independent plasmons for terahertz-stable topological metamaterials

To efficiently integrate cutting-edge terahertz technology into compact devices, the highly confined terahertz plasmons are attracting intensive attention. Compared to plasmons at visible frequencies in metals, terahertz plasmons, typically in lightly doped semiconductors or graphene, are sensitive to carrier density (n) and thus have an easy tunability, which leads to unstable or imprecise terahertz spectra. By deriving a simplified but universal form of plasmon frequencies, here, we reveal a unified mechanism for generating unusual n-independent plasmons (DIPs) in all topological states with different dimensions. Remarkably, we predict that terahertz DIPs can be excited in a two-dimensional nodal line and one-dimensional nodal point systems, confirmed by the first-principle calculations on almost all existing topological semimetals with diverse lattice symmetries. Besides n-independence, the feature of Fermi velocity and degeneracy factor dependencies in DIPs can be applied to design topological superlattice and multiwalled carbon nanotube metamaterials for broadband terahertz spectroscopy and quantized terahertz plasmons, respectively. Surprisingly, high spatial confinement and quality factor, also insensitive to n, can be simultaneously achieved in these terahertz DIPs. Our findings pave the way for developing topological plasmonic devices for stable terahertz applications.

AlGaN-based UV-B laser diode with a high optical confinement factor

To reduce the threshold current density (Jth) of ultraviolet (UV)-B AlGaN-based laser diodes, we investigated the critical parameters aiming to increase the injection efficiency ηi and the optical confinement factor Γ. Optimization of the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer demonstrated that the device characteristics can be improved. This optimization achieved a reduction in Jth to 13.3 kA cm−2 at a lasing wavelength of 300 nm, thus offering the lowest Jth value yet achieved for a UV-B laser diode.

Designing Mid-Infrared Gold-Based Plasmonic Slot Waveguides for CO2-Sensing Applications.

Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO2, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.

Surface plasmon polaritons frequency-blue shift in low confinement factor excitation region* *Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0701000, 2018YFF01013001, and 2020YFA0714001) and the National Natural Science Foundation of China (Grant Nos. 61988102, 61921002, and 62071108).

Surface plasmon polaritons’ (SPPs’) frequency blue shift is observed in finite-difference time-domain (FDTD) simulation of parallel electron excitation Au bulk structure. Comparing with cold dispersion of SPPs, an obvious frequency blue shift is obtained in low confinement region excitation simulation results. Then, according to SPPs’ transverse attenuation characteristics, the excited frequency mode instead of cold dispersion corresponding frequency mode matches it. Thence, this excited mode is confirmed to be SPPs’ mode. As is well known the lower the frequency, the smaller the confinement factor is and the lower the excitation efficiency, the wider the bandwidth of excited SPPs is. And considering the attenuation in whole structure, the excited surface field contains attenuation signal. In a low confinement factor region, the higher the SPPs’ frequency, the higher the excitation efficiency is, while broadband frequency information obtained in attenuation signal provides high frequency information in stimulation signal. Thence, in the beam–wave interaction, as the signal oscillation time increases, the frequency of the oscillation field gradually increases. Thus, compared with cold dispersion, the frequency of excited SPP is blueshifted This hypothesis is verified by monitoring the time domain signal of excited field in low and high confinement factor regions and comparing them. Then, this frequency-blue shift is confirmed to have commonality of SPPs, which is independent of SPPs’ material and structure. Finally, this frequency-blue shift is confirmed in an attenuated total reflection (ATR) experiment. Owing to frequency dependence of most of SPPs’ devices, such as coherent enhancement radiation and enhancement transmission devices, the frequency-blue shift presented here is of great influence in the SPPs applications.

Si3N4 – SiO2 Based Curve Slot Waveguide for High Confinement Factor and Low Mode Effective Area along with Biosensing Application

Si3N4 – SiO2 Based Curve Slot Waveguide for High Confinement Factor and Low Mode Effective Area along with Biosensing Application

Theoretical study of microcavity-enhanced absorption spectroscopy for mid-infrared methane detection using a chalcogenide/silica-on-fluoride horizontal slot-waveguide racetrack resonator.

The reported chalcogenide (ChG) rectangular waveguide sensors with a small evanescent field need a large waveguide length to obtain an enhanced light-gas interaction effect. To make such sensors compact and improve the light-gas interaction effect, a microcavity-enhanced absorption spectroscopy technique for methane (CH4) detection was proposed using a mid-infrared chalcogenide/silica-on-fluoride horizontal slot-waveguide racetrack resonator. For the horizontal slot waveguide, an equivalent sensor model (ESM) and related formulations were proposed to simplify the analysis of the racetrack resonator sensor model (RRSM), and the ESM was verified through a comparison between the theoretical result of ESM and the simulation result of RRSM based on the finite element method (FEM). Due to the use of a chalcogenide/silica-on-fluoride horizontal slot-waveguide structure, the waveguide parameters were optimized to obtain a high power confinement factor of 44.63% at the wavelength of 3291 nm, which is at least 5 times higher than other ChG rectangular waveguides. The waveguide length is reduced at least 30 times due to the use of the optimized chalcogenide/silica-on-fluoride horizontal slot-waveguide and racetrack resonator. The limit of detection (LoD) is 3.87 ppm with an intrinsic waveguide loss of 3 dB/cm and an amplitude coupling ratio of 0.1 for the resonator. The response time is less than 5 µs due to the small light-gas interaction area. The influences of environmental pressure and waveguide intrinsic loss on the sensing characteristics were discussed. The compact racetrack resonator sensor structure and equivalent analytical model can also be adopted in the design of an on-chip waveguide sensor for the detection of other gas species.

Power transfer between nanoscale diverse coupled waveguides toward smooth integrated optical communication

A numerical approach to calculate the power transfer between nanoscale waveguides was proposed. Series of complex power-transfer simulations have been performed when comparing two adjacent waveguides made of different materials. The results showed interesting focusing phenomena when coupling a waveguide sharing a high power confinement factor to a waveguide sharing a low one. In addition, we describe the physical properties of a nanoscale integrable waveguide for smooth integration in the microelectronics industry and analyze two case studies regarding such a possible integration. It seems that due to the lack of ability to confine the mode inside a nanoscale dimensions waveguide, combining waveguides with current size transistor may be, at this stage, difficult to realize without specific fits of the whole module.

Membrane InGaAsP Mach–Zehnder Modulator Integrated With Optical Amplifier on Si Platform

A high-efficiency Mach-Zehnder modulator (MZM) using InGaAsP phase shifters and a semiconductor optical amplifier (SOA) using multiple-quantum-well (MQW) are integrated on Si-waveguide circuits. Membrane structure is easy to optically couple to the widely-used 220-nm-thick Si waveguides, because both layers have comparable effective refractive indices. To integrate different bandgap III-V compound semiconductors; InGaAsP-based MQW for SOA and InGaAsP bulk for MZM, we employ epitaxial regrowth on thin-InP layer that is directly bonded on a silicon-on-insulator (SOI) wafer. Their thicknesses are smaller than the critical thickness (∼430 nm) for epitaxial growth of the InP-based layers bonded on the SOI wafer. This fabrication procedure is beneficial for the wafer-level integration of InP-based devices with different bandgaps on Si-photonic circuits. Furthermore, membrane lateral p-n and p-i-n diode structures improve the modulation efficiency of the MZM and reduce the power consumption of the SOA due to the high optical confinement factor and small active area. The integrated 300-μm-long SOA and MZM with 500-μm-long phase shifters show a fiber-to-fiber lossless operation with the SOA current of only 24 mA at room temperature. The modulation efficiency of the compact MZM is high enough for eye opening with non-return-to-zero (NRZ) signals from 28 to 40 Gbit/s. By using the SOA to amplify the signals modulated by the MZM, the fiber output power of −3.4 dBm was obtained without any significant pattern effect.