High-voltage Switch Research Articles

Bias disk boost technique for pulsed-operation electron cyclotron resonance ion sources

A simple, effective technique to increase the intensity of multiply charged ions has been developed for pulsed-operation electron cyclotron resonance ion sources (ECRISs). The technique is realized simply by applying an additional boost voltage of about −1 kV to a negative constant voltage on the bias disk. The technique can be applied to general ECRISs by adding electric devices to the bias disk circuit, such as a high-voltage power supply, a fast high-voltage switch, and a diode. The effect of the technique depends on the ion species, and we obtained a maximum ion intensity increase of 66% for O6+ compared with the conventional bias disk method. In particular, the technique can be applied to the existing pulsed-operation ECRISs used at a heavy-ion cancer therapy facility where multi-ion treatment with multiply charged oxygen and neon ions is planned to be introduced.

Optical and spectral techniques for studying high-voltage laser-triggered switch

In the present paper we have performed sets of experiments to study laser triggering high voltage switch. In this study, instead of electrical diagnostics, optical technique was utilized to characterize the discharge process. A Q-switched nanosecond Nd:YAG laser was used for triggering the switch. Dynamics of discharge, and the time delay of laser produced pre-plasma was monitored by fast photo diode signal which was connected to a fast oscilloscope. The spectrum of discharge emission was also recorded by photo spectrometer from which plasma parameters i.e. electron temperature, and density were estimated.

Analysis of SF6 and CF4 consumption for refueling high-voltage switching equipment

The article describes to eliminate possible errors in the supply of cylinders with sulfur hexafluoride and cylinders with carbon tetrafluoride to high-voltage substations for refueling switching devices such as high-voltage switches, voltage transformers, etc. Conduct an analysis of possible erroneous supplies of the two above-mentioned gases at the substation. Make an analysis of possible residuals (or shortfalls) of gas cylinders after refilling. Make an assumption about the reasons for the appearance of possible residues. Give recommendations for overcoming possible problems. Make the appropriate calculations. Propose a formula (table) for recalculating the consumption of both types of gases. Make a table for calculating the actual values of the number of supplied cylinders, related to the discreteness of the volumes of the cylinders and the switching devices themselves. Draw appropriate conclusions and make recommendations. To achieve this goal, a method was used to calculate the state of an ideal gas using software for working with spreadsheets. The article reflects the relevance of the topic and discusses the features of refueling high-voltage SF6 equipment in various climatic conditions (below minus 40-49°F). An analysis of typical ratings of high-voltage switches used at highvoltage substations was carried out. A graph is presented for converting the molar fraction (contributing to pressure) of gases into the mass fraction. A sample calculation of the number of cylinders is presented for two commonly encountered volumes of switching devices and fortyliter gas cylinders for several standard cylinder filling ratios. Presumptive conclusions are presented regarding the assessment of real errors when sending gas cylinders for refilling switching devices. The article offers an understanding of the sequence of problems associated with incorrect calculations and a complete methodology for calculating the correct volumes (mass) of gas depending on the actual types of devices used, depending on the volume of supplies pieces of equipment.

Development of an Anti-Discharge Unit (ADU) for gaseous proportional counters at FRIB

Sporadic harmful discharges between the detector electrodes are inherent features of the operation of proportional counters in conditions of highly ionizing background, high gas gain, or high rate. Frequent energetic discharges can deteriorate the overall performance of the detector and cause permanent damage to the detector components. In addition, they can significantly reduce the counting rate capability of the device due to the prolonged recovery time of high-voltage power supplies.In this work, we describe the development of an Anti-Discharge Unit (ADU) implemented in a Parallel-Plate Avalanche Counter (PPAC) for heavy-ion tracking. The ADU is based on a High-Voltage (HV) MOSFET switch that shuts off the electric field between the detector electrodes within a few tens of nanoseconds when the output signal is above a fixed threshold, effectively preventing the development of streamer discharges. The avalanche field is restored within a few milliseconds so that the detector dead time is small, even in the case of moderately high spark rates. The ADU can operate effectively in conditions of high rates and highly ionizing backgrounds, in addition to enhancing the detection efficiency and extending the lifetime of the electrodes.

A modular, isolated high-voltage switch for application in ion mobility spectrometry

Ion mobility spectrometry is an emerging technology in trace gas analysis that has moved from typical safety and security applications to many other fields ranging from environmental and food quality monitoring to medicine and life sciences. Nevertheless, further dissemination, including the development of new instruments and the expansion into new fields of application requires the availability of the fundamental components of ion mobility spectrometers. For example, the electronics is essential for the analytical performance, but is only provided by specialized manufacturers due to specific requirements. In this paper, we present a modular, isolated high-voltage switch that can be operated at an isolated potential. The modular design enables tailoring its configuration to the required application. Each module can switch a voltage of up to 3 kV, and can be operated with an offset voltage of up to 7 kV. The switch has rise and fall times of less than 25 ns, making it suitable for a wide range of applications, e.g., in ion mobility spectrometry. Finally, the presented modular, isolated high-voltage switch was used in a push–pull configuration to generate the injection pulse of the ion gate. The new modular, isolated high-voltage switch shows similar performance compared to a commercially available high-voltage switch.

Current-carrying tribological behavior and wear mechanism of CuW composites with different W content

CuW composites are widely used in the field of electrical contacts, such as high-voltage switch and microelectronic devices, and the service life of the key components is directly affected by its wear resistance and corrosion resistance. In this paper, the effects of loading current on the tribological behavior of CuW composites with different W content were studied, focusing on the variation of friction coefficient during friction, wear rate and the wear topography of the surface after friction, and the wear mechanism was discussed. The results indicate that the friction coefficient of CuW composites was larger under energized conditions than under dry friction conditions, and that the friction coefficient first increases and then decreases with the increasing current. The main reason for the decrease in friction coefficient is that the heat generated by increasing current creates a layer of molten lubricant on the contact surface. In addition, the wear rate of the CuW composites decreased as the W content increased. When loaded with a current of 15 A, the CuW80 composites exhibited the lowest wear rate of 8 × 10−3 mg/m, which was attributed to the improved wear resistance due to the ability of the high W content to resist plastic deformation. The wear forms of CuW composites under current loading include adhesion, abrasive wear and arc erosion, and fatigue wear was also associated with long-term high current conditions.

Design of SEE-Tolerant analog switch chip with a novel diode structure *

This paper proposes a novel circuit-level design in order to enhance the radiation tolerance of an analog switch integrated circuit. After analyzing the mechanisms of single-particle sensitivity in a high-voltage analog switch chip fabricated using a commercial 1 μm complementary metal–oxide–semiconductor process, a diode unit was employed to reduce the V GS (voltage between the gate and the base) of the parasitic triode within the metal–oxide–semiconductor field-effect transistor of the switch. This reduction lowered the probability of activating the parasitic triode in response to single-event effect (SEE). Subsequently, single-particle irradiation experiments proceeded with the high-voltage analog switch chip, both with and without the diode unit. In the unreinforced device, the current of the power supply reached 100 mA within 11 s of single-particle irradiation at 75.8 MeV•cm2 mg−1. In contrast, in the reinforced device, the current of the power supply remained relatively stable under irradiation at both 37.2 and 75.8 MeV•cm2 mg−1. These findings indicate that the reinforced analog switch chip exhibits an SEE tolerance exceeding 75.8 MeV•cm2 mg−1, highlighting its potential to enhance the radiation tolerance of analog switches.

A gas spark switch electrode impact pressure test platform.

The discharge arc of a high-current gas spark switch has a strong mechanical effect on the electrode and adjacent objects. The measurement of this mechanical effect on the electrode plays a very important role in switch design and the theoretical study of spark discharge. However, in traditional stress measurement systems, the spatial electromagnetic interference caused by the discharge and the high electrode voltage affects the measurement accuracy and can even damage the experimental instrument. In this paper, an electrode impact stress measurement system based on PVDF piezoelectric film is designed to measure the electrode stress under a strong spatial electromagnetic field and high voltage. The experimental results show that the system can measure the impact pressure of high-voltage and high-current gas spark switch electrodes. The starting time of the stress measurement waveform shows that the shock to the electrode is formed in the initial stage of current buildup. The measured results clearly show the high magnetic field force component in the electrode impact pressure waveform. The shock waveforms induced by different pulse capacitor values, breakdown voltages, and loads are examined. It is found that the shock stress waveforms applied to the electrodes are affected by the peak value of the current, dI/dt, and the discharge duration.

Square Parametric Excitation: A Digital Resonant Method for the Quadrupole Ion Trap.

Digital ion trap technology is an alternate method for driving quadrupole ion traps and mass filters using variable frequency, fixed amplitude RF square waves in place of variable amplitude, fixed frequency RF sine waves. This technique offers some advantages such as an increase in the high mass analysis range by varying frequency and lower overall voltage requirements. Here, we present a complex square waveform developed for resonant parametric excitation in a quadrupole linear ion trap. Unlike traditional resonance methods, the driving RF square wave and auxiliary square wave are coupled using the same digital circuitry without the need for transformer coupling. In this work, we use this complex waveform to selectively excite the first order parametric resonances of ion motion. The square parametric excitation method presented here employs a simple and repetitive circuit design consisting of a low-voltage waveform generator followed by a series of high-voltage MOSFET switches. This design allows for resonance methods to be easily implemented in the all-digital quadrupole. The complex square waveform can perform the same useful functions as sine wave auxiliary signals, such as selective mass elimination and mass isolation. We also demonstrate that the mass resolution performance and S/N of our digital mass spectrometer is improved by applying the complex square waveform during ion ejection.

Algorithm for extracting spectral features of substation high-voltage isolation switch card shibboleth faults

Algorithm for extracting spectral features of substation high-voltage isolation switch card shibboleth faults

Research on the Method and Device for Judging the Position and Status of GIS Disconnectors

Abstract When there is a mechanical defect in the isolation switch, its action process must be different from the normal state, and this difference will inevitably lead to changes in the working condition of the power source. Therefore, the mechanical state of the isolation switch can be determined by detecting the state quantity of the power source. This paper compares the power curves of the defect state and the normal mechanical state through simulation testing, and judges the mechanical state of the isolation switch based on the trend of power curve changes in different motion stages. Based on this technical route, an online monitoring device for the mechanical status of isolation switches has been developed, which can intelligently judge the mechanical status and opening/closing status of the tested isolation switch based on online monitoring data, quantitatively diagnose existing mechanical defects, and provide corresponding maintenance opinions, providing strong support for the installation, operation, maintenance, and quality judgment of high-voltage isolation switches.

P‐5: 27‐inch Ultra‐Narrow‐Border LCD with a Two‐Stage Output Gate Driver Circuit

A two‐stage output gate driver circuit with a clock‐controlled inverter is proposed and investigated. High and low voltage switching of inverter diminishes the positive bias stress of amorphous silicon TFTs in the circuit. The design of one cell with two‐stage output reduces the number of blocks in the gate driver circuit by half. This circuit was successfully developed for a 27‐inch LCD product with a 1.88 mm border.

Parasitic-Based Model for Characterizing False Turn-On and Switching-Based Voltage Oscillation in Hybrid T-Type Converter

High frequency and high voltage switching converters utilizing wide bandgap semiconductors are gaining popularity thanks to their compactness and improved efficiency. However, the faster switching requirements gives rise to new challenges. A key issue is the increased oscillation of the drain–source voltage caused by the switching action of the complementary switch in the same phase or change of state of the other phase switches. The voltage stress caused by these oscillations can damage the switch. Furthermore, the high dv/dt during turning-on of one switch might result in false turn-on of the complementary switch due to the miller effect. In this paper, these issues are investigated in a T-type converter through analytical and experimental analysis. Based on the proposed analytical approach, simple and cost-wise solutions utilizing an optimum design of gate driver circuits and circuit layout modifications can be developed to cope with the aforementioned issues. A comprehensive analytical model of the converter with consideration of parasitic capacitances and inductances is developed. By performing sensitivity analysis on the model, the effect of the parasitic parameters on the drain–source voltage oscillation and gate–source voltage amplitude in case of false turn-on is studied. The validity of the model is then assessed through numerical simulations and experimental results.

Optimizing Ion Optical Design for Laser Ablation Source in Mass Spectrometry

The study focuses on optimizing a Laser Ablation Source (LAS) for use in mass spectrometry, particularly aiming to enhance transmission of ions and and determination of isotopic compositions in diverse matrices at TRIUMF’s Ion Trap for Atomic and Nuclear Science (TITAN). Critical variables affecting mass spectrometer resolution, such as ion kinetic energy distribution and ion transport are optimized through LAS. The paper explores the importance of consistent initial conditions, ion transport efficiency, and ion capture for accurate and reproducible measurements. Using SIMION software, we optimized ion optical design to tackle challenges like collimating ions travelling off-axis and mass filtering. A significant part of the study is dedicated to ion optic design to enable low abundance measurement of ions of interest (e.g., 10 ions of interest out of 1014 total ions). Techniques like high voltage switching and beam shaping were explored, and the final design aims for high transport efficiency and a 4 mm effective target scan area with maximum transport efficiency. The integration of LAS with a Multiple-Reflection Time-Of-Flight Mass Spectrometer (MR-TOF-MS) is expected to yield an analytical tool with high spatial resolution and transport efficiency for isotope abundance measurement.

Low-cost dual-energy CBCT by spectral filtration of a dual focal spot X-ray source

Dual-energy cone beam computed tomography (DE-CBCT) has been shown to provide more information and improve performance compared to a conventional single energy spectrum CBCT. Here we report a low-cost DE-CBCT by spectral filtration of a carbon nanotube x-ray source array. The x-ray photons from two focal spots were filtered respectively by a low and a high energy filter. Projection images were collected by alternatively activating the two beams while the source array and detector rotated around the object, and were processed by a one-step materials decomposition and reconstruction method. The performance of the DE-CBCT scanner was evaluated by imaging a water-equivalent plastic phantom with inserts containing known densities of calcium or iodine and an anthropomorphic head phantom with dental implants. A mean energy separation of 15.5 keV was achieved at acceptable dose rates and imaging time. Accurate materials quantification was obtained by materials decomposition. Metal artifacts were reduced in the virtual monoenergetic images synthesized at high energies. The results demonstrated the feasibility of high quality DE-CBCT imaging by spectral filtration without using either an energy sensitive detector or rapid high voltage switching.

Understanding Interfaces in AlScN/GaN Heterostructures

AbstractAluminum scandium nitride barrier layers increase the available sheet charge carrier density in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of high‐frequency amplifiers and high voltage switches. Growth of AlScN by metal‐organic chemical vapor deposition is challenging due to the low vapor pressure of the conventional Sc precursor Cp3Sc, which induces low growth rates of AlScN and leads to thermally‐induced AlScN/GaN‐interface degradation. In this work, novel Sc precursors are employed to reduce the thermal budget by increasing the growth rate of the AlScN layer. The AlScN/GaN interfaces are investigated by high‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, time‐of‐flight secondary ion mass spectrometry, capacitance–voltage, current–voltage and temperature‐dependent Hall measurements. Linearly graded interlayers with strain‐induced stacking faults, edge, and screw dislocations form at the AlScN/GaN interface at growth rates of 0.015 nms−1. Growth rates of 0.034 nms−1 and higher allow for abrupt interfaces, but a compositional grading in the barrier remains. Homogeneous barrier layers can be achieved at growth rates of 0.067 nms−1 or by growing an AlN interlayer. The electrical properties of the heterostructures are sensitive to Sc accumulations at the cap/barrier interface, residual impurities from precursor synthesis, and surface roughness. This study paves the way for high‐performing devices.

Quality Control of Doppler Spectra from a Vertically Pointing, S-Band Profiling Radar

Abstract This study describes a novel combination of methods to remove spurious spectral peaks, or “spurs,” from Doppler spectra produced by a vertically pointing, S-band radar. The University of Massachusetts S-band frequency-modulated, continuous-wave radar (UMass FMCW) was deployed to monitor the growth of the CBL over northern Alabama during the VORTEX–Southeast field campaign in 2016. The Doppler spectra contained spurs caused by high-voltage switching power supplies in the traveling wave tube amplifier. In the original data-processing scheme for this radar, a median filtering method was used to eliminate most of the spurs, but the largest ones persisted, which significantly degraded the quality of derived radar moments (e.g., reflectivity, Doppler velocity, and spectrum width) and hindered further analysis of these data (e.g., hydrometeor classification and boundary layer height tracking). Our technique for removing the spurs consists of three steps: (i) a Laplacian filter identifies and masks peaks in the spectra that are characteristic of the spurs in shape and amplitude, (ii) an in-painting method then fills in the masked area based on surrounding data, and (iii) the moments data (e.g., reflectivity, Doppler velocity, and spectrum width) are then recomputed using a coherent power technique. This combination of techniques was more effective than the median filter at removing the largest spurs from the Doppler spectra and preserved more of the underlying Doppler spectral structure of the scatterers. Performance of both the median-filter and the in-painting methods is assessed through statistical analysis of the spectral power differences. Downstream products, such as boundary layer height detection, are more easily derived from the recomputed moments. Significance Statement This manuscript describes a novel combination of image and signal processing techniques used to recover meteorological observations from corrupted Doppler radar spectra. This successful recovery of meteorologically significant information illustrates the importance of retaining Doppler spectra when practical. In seeking solutions to data quality issues, the atmospheric science community should remain cognizant of promising techniques offered by other disciplines. We present this data rescue study as an example to the meteorological community.

Evaluation method for electromagnetic interference complexity of high voltage switch based on feature extraction and GCC‐GRU network

AbstractWhen some new‐type sensors are subjected electromagnetic interference (EMI), the traditional standard can no longer serve as the guidance for their EMI protection. Therefore, it is necessary to evaluate the complexity of the new sensing equipment's suffering from electromagnetic interference. A hybrid method of feature extraction and complexity evaluation of Electromagnetic Interference signals based on generalised correntropy criterion (GCC) is proposed. First, a variational mode decomposition algorithm for adaptive extraction of decomposed signals is constructed using GCC, and Generalised S‐transform is used for processing and reorganisation. Then, according to the time‐frequency space model, a new quantitative evaluation criterion interference factor is proposed, which overcomes the shortcomings of the traditional qualitative classification and the inability to solve the cross classification of indicators. Then, the Gated Recurrent Unit is introduced, and the GCC‐GRU evaluation model with GCC as the loss function is derived. The authors conduct EMI tests and measured signal evaluation with Medium Voltage and High Voltage switches, and the results show that the method proposed is correct and effective.

Emission of Parasitic X Rays of Vacuum-electron Tubes with Glass Housings: Implications for the Evaluation of Occupational Doses.

Despite the large variety of high-voltage semiconductor components for medium and high voltage switching and pulse-forming applications as well as for high-power high-frequency generation, the use of vacuum electron tubes still prevails to a considerable degree. Due to the common design incorporating a high energy electron beam which finally is dumped into an anode or a resonator cavity, these tubes are also considered as sources of X rays produced as bremsstrahlung and characteristic radiation, which are referred to as parasitic X rays. Here three types of vacuum-electron tubes, diode, tetrode, and thyratron, with glass housings are investigated. They are predominantly operated in the high voltage range below 30 kV and are not subject to licensing laws. The measurements of the dose rate and X-ray-spectra were performed in the laboratory without complex electrical circuitry usually used in making practical measurements for occupational radiation protection. For the diode tube, where a parasitic X-ray emission is observed only in the reverse operation as a blocking diode, a broad distribution of dose rates of electrically equivalent specimens was observed. This is attributed to field emission from the electrodes. For the tetrode and the thyratron tubes, field emission from the electrodes is identified as the dominant mechanism for the generation of parasitic X rays. Thus, technical radiation protection must focus on shielding of the glass tube rather than optimization of the electrical circuitry.

Comparative Study of Different High Voltage Switches Used in Pulsed High Voltage Application

High-voltage switches play a crucial role in pulsed power applications, where the efficient and reliable control of highvoltage pulses is required. This study aims to compare different types of high-voltage switches commonly used in pulsed power systems including electromechanical switches, vacuum switches, gas-filled switches, triggered spark gaps and solidstate switches. The comparison study focuses on key performance parameters such as voltage handling capability, current carrying capacity, turn-on time, and repetition rates are considered to provide a comprehensive study and analysis of the switch’s suitability for different pulsed power applications. Gas-filled switches such as spark gaps, thyratrons and ignitrons have been used in pulsed power systems due to their high voltage handling capability and low switching losses. However, they suffer from a limited lifetime and require maintenance and periodic replacement. Solid-state switches, i.e. Silicon-Controlled Rectifiers (SCRs), Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) offer advantages in terms of longevity, reliability, and reduced maintenance. However, they have limitations in high-voltage applications and exhibit higher switching losses. The findings of this comparison study will assist researchers, engineers, and system designers in selecting the most appropriate high-voltage switch for pulsed power applications, considering the specific requirements and constraints of the system. This will ultimately contribute to the advancement and optimization of pulsed power technologies across a wide range of scientific, industrial, and strategic applications.