High-voltage Power Semiconductor Devices Research Articles

MV Power Conversion Systems Enabled by High-Voltage SiC Devices [Happenings

Reports on medium voltage (MV0 power conversion systems that are enabled by high-voltage silicon carbide (SiC) devices. Thanks to recent strides in power electronics research and the availability of high-voltage SiC power semiconductor devices, we can contemplate building a smart “solid-state transformer” to handle the demands of the smart grid. In electrical distribution systems, the transformers convert thousands of volts MV into lower voltages that can be safely used in homes and businesses. With emerging technologies in building and fabricating MV SiC-based power semiconductor devices, MV power conversion on a large-scale scenario seems feasible. While companies, such as Wolfspeed (CREE), General Electric, Infineon Technologies, Mitsubishi, and ROHM, continue to develop and improve these MV semiconductor devices, we at the FREEDM Systems Center are aiming at the application side of things to ensure a market for these power devices.

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

In this study, a new robust double-ring junction-termination-extension (DR-JTE) for high-voltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DR-JTE reduces the electrical field at both, the edge of the single-JTE region and the MESA-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5kVand the maximum acceptable deviation of the optimum implantations dose is twice than that of the single-JTE structure. Furthermore, due to the internal ring, the MESA-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the MESA.

SiC based Technology for High Power Electronics and Packaging Applications

Department of Materials Science and Engineering, University of Seoul, Seoul 130-743, Korea(Received June 11, 2014: Corrected June 23, 2014: Accepted June 25, 2014)Abstract: Silicon has been most widely used semiconductor material for power electronic systems. However, Si-basedpower devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices forbetter performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. Newwide band gap materials such as SiC have now been introduced for high power applications. SiC power devices havebeen evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications.In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpartin terms of higher switching performance, higher voltages and higher power density. The recent progress in thedevelopment of high voltage power semiconductor devices is reviewed. Future trends in device development andindustrialization are also addressed.Keywords: SiC, Packaging, Semiconductor, IGBT, JFET

A Resonant Gate-Drive Circuit With Optically Isolated Control Signal and Power Supply for Fast-Switching and High-Voltage Power Semiconductor Devices

This paper deals with a resonant gate-drive circuit for fast-switching and high-voltage power semiconductor devices, which is equipped with optical fibers for both gate control signal and dc power supply. A resonant inductor connected with the gate terminal makes it possible to charge or discharge the gate-to-source voltage by using the parallel resonance between the inductor and the input capacitance of the device. The optical fibers can be used to deliver the driving power to the gate-drive circuit, because the circuit theoretically causes no power consumption for driving the power device. Moreover, the proposed circuit makes it possible to suppress fluctuations in the gate voltage caused by a rapid change in the drain-to-source voltage. Experimental results are shown to verify the viability of the proposed circuit.

Wide Band Gap Semiconductor Devices for Power Electronics

It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed.

A Resonant Gate-Drive Circuit for Fast High-Voltage Power Semiconductor Devices with Optical Isolation of Both Control Signal and Power Supply

A Resonant Gate-Drive Circuit for Fast High-Voltage Power Semiconductor Devices with Optical Isolation of Both Control Signal and Power Supply

Reliability considerations for recent Infineon SiC diode releases

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. New device technologies and products have lead to an ever increasing size and variety of the markets addressed by SiC. The specific material properties and the new applications served by SiC devices give rise to specific reliability requirements, reaching beyond the scope of standard tests established for silicon based devices. Here, we show details of Infineon’s strategy to ensure high device reliability even under extreme operating conditions encountered in the field. E.g., an especially tailored dynamic reverse bias test shows that Infineon’s new 1200 V SiC Schottky diodes can be continuously operated at high voltage slopes of 120 V/ns under the conditions specified in this paper.

State-of-the-art technologies and devices for high-voltage integrated circuits

The current status of high-voltage power semiconductor devices and technologies for high-voltage integrated circuits is reviewed and the new trends in this field are discussed. The paper focuses on the concepts of the novel reduced surface field and state-of-the-art silicon technologies such as high-voltage silicon on insulator, which are expected to play an increasingly important role in power system on-chip manufacturing. Lateral devices such as LDMOSFETs, superjunctions and lateral insulated gate bipolar transistors are discussed. The paper also touches on emerging technologies such as unified MEMS-IC for enhanced breakdown capability and isolation. Finally, an overview of the fierce fight of technology survival in terms of specific on-state resistance against breakdown voltage is given.

Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications

Since the first commercially viable thyristors appeared in the early 1960s, there has been a dramatic increase in the switched power ratings and versatility of high-voltage power semiconductor devices. By the mid 1970s, thyristors with switched power ratings of several MVA were being applied in high voltage dc transmission systems and static VAr compensators. The introduction, in the 1980s, of controlled turn-off devices, such as the gate turn-off thyristor (GTO) and insulated gate bipolar transistor (IGBT), broadened the application of high-voltage power devices to hard-switched converters and, by the start of the 21st century, controllable silicon power devices were available with voltage ratings of 12 kV and switched power capabilities of up to 40 MVA. A review of the current state-of-the-art in silicon high-voltage power semiconductor technology covers gate-commutated thyristors (GCT, IGCT) and IGBT devices, including the injection-enhanced IGBT or IEGT. Despite these considerable achievements, there is now mounting evidence that silicon-based power semiconductors are reaching their limit, both in terms of voltage rating and of switched power capability. The introduction of wide-band-gap semiconductor materials such as silicon carbide offers the potential to break through the voltage-switching frequency limitations of silicon, with power-switching frequency products more than two orders of magnitude higher. An analysis of the current status and future prospects for silicon carbide power electronic devices is presented, together with a case study comparing a variety of silicon and silicon carbide solutions in a 10 kV hard-switched converter application. It is shown that an all-silicon carbide switch offers the best electrical performance and lowest cost solution, in spite of higher per unit area device costs.

Controlled series compensation in coordination with double order SVS auxiliary controller and induction M/C for repressing the torsional oscillations in power systems

Abstract Development of high voltage and high current rated power semiconductor devices has led to the flexible ac transmission systems (FACTs). This paper deals with the controlled series compensation for enhancing the power transfer capability of transmission line in coordination with SVS (double order static var system) auxiliary controller and induction machine for repressing the torsional oscillations in power systems. The IEEE first benchmark model is considered for study. The role of controlled series compensation is mainly to repress large power oscillations while that of induction machine is to damp low power perturbations. The SVS auxiliary controller has a significant effect on both. Computer simulations show that the proposed scheme is effective in repressing the torsional oscillations for all levels of series compensation over a wide range of operating conditions.

The use of aluminium ion implantation for power semiconductor devices

Because of its high diffusivity in silicon, aluminium is best suited for the deep diffusions often required in high voltage power semiconductor devices. The ion implantation technique allows the reproducible low dosage doping necessary, e.g., for the new concepts of junction termination systems.The most important draw back of the use of aluminium as a p-type dopant in silicon is its low electrical activity after the anneal. The main problem therefore is the enhancement of the aluminium yield (the amount of electrically active Al with respect to the implanted dose). Sheet resistivity and spreading resistance measurements after various annealing processes are presented as well as a triple implant process, which allows to enhance the aluminium yield.