High Temperature Pressure Sensor Research Articles

Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors

Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors

Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors

Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al2O3) as the transition layer and utilizing aluminum nitride (AlN) grooves for alignment through microfabrication techniques. The composite layers strongly adhere to the substrate at temperatures reaching 950 °C, and the interface of the Al2O3/Pt bilayer remains stable at elevated temperatures of approximately 950 °C. This stability contributes to the excellent high-temperature electrical performance of the Pt RTD, enabling it to endure temperatures exceeding 850 °C with good linearity. These characteristics establish a basis for the future integration of Pt RTD in SiC pressure sensors. Furthermore, tests and analyses are conducted on the interfacial diffusion, surface morphological, microstructural, and electrical properties of the Pt films at various annealing temperatures. It can be inferred that the tensile stress and self-diffusion of Pt films lead to the formation of hillocks, ultimately reducing the electrical performance of the Pt thin-film RTD. To increase the upper temperature threshold, steps should be taken to prevent the agglomeration of Pt films.

FPI-FBG Cascaded High-Temperature Pressure Sensor up to 700 °C Based on Vernier Effect Utilizing Femtosecond Laser

FPI-FBG Cascaded High-Temperature Pressure Sensor up to 700 °C Based on Vernier Effect Utilizing Femtosecond Laser

Temperature Compensation Method Based on Bilinear Interpolation for Downhole High-Temperature Pressure Sensors.

Due to their high accuracy, excellent stability, minor size, and low cost, silicon piezoresistive pressure sensors are used to monitor downhole pressure under high-temperature, high-pressure conditions. However, due to silicon's temperature sensitivity, high and very varied downhole temperatures cause a significant bias in pressure measurement by the pressure sensor. The temperature coefficients differ from manufacturer to manufacturer and even vary from batch to batch within the same manufacturer. To ensure high accuracy and long-term stability for downhole pressure monitoring at high temperatures, this study proposes a temperature compensation method based on bilinear interpolation for piezoresistive pressure sensors under downhole high-temperature and high-pressure environments. A number of calibrations were performed with high-temperature co-calibration equipment to obtain the individual temperature characteristics of each sensor. Through the calibration, it was found that the output of the tested pressure measurement system is positively linear with pressure at the same temperatures and nearly negatively linear with temperature at the same pressures, which serves as the bias correction for the subsequent bilinear interpolation temperature compensation method. Based on this result, after least squares fitting and interpolating, a bilinear interpolation approach was introduced to compensate for temperature-induced pressure bias, which is easier to implement in a microcontroller (MCU). The test results show that the proposed method significantly improves the overall measurement accuracy of the tested sensor from 21.2% F.S. to 0.1% F.S. In addition, it reduces the MCU computational complexity of the compensation model, meeting the high accuracy demand for downhole pressure monitoring at high temperatures and pressures.

Rational Design of Amorphous Carbon-Coated Laminar-Structured Wood for Integrating Repeatable Early Fire Detection and High-Temperature Affordable Flexible Pressure Sensing in One System.

High-temperature affordable flexible polymer-based pressure sensors integrated with repeatable early fire warning service are strongly desired for harsh environmental applications, yet their creation remains challenging. This work proposed an approach for preparing such advanced integrated sensors based on silver nanoparticles and an ammonium polyphosphate (APP)-modified laminar-structured bulk wood sponge (APP/Ag@WS). Such integrated sensors demonstrated excellent fire warning performance, including a short response time (minimum of 0.44 s), a long-lasting alarm time (>750 s), and reliable repeatability. Moreover, it achieved high-temperature affordable flexible pressure sensing that exhibited an almost unimpaired working range of 0-7.5 kPa and a higher sensitivity (in the low-pressure range, maximum to 226.03 kPa-1) after fire. The high stability was attributed to reliable structural elasticity, and the wood-derived amorphous carbon is capable of repeatable fire warnings. Finally, a Ag@APP/WS-based wireless fire alarm system that realized reliable house fire accident detection was demonstrated, showing great promise for smart firefighting application.

Highly birefringent side-hole fiber Bragg grating for high-temperature pressure sensing.

We demonstrate a novel, to the best of our knowledge, high-temperature pressure sensor based on a highly birefringent fiber Bragg grating (Hi-Bi FBG) fabricated in a dual side-hole fiber (DSHF). The Hi-Bi FBG is generated by a femtosecond laser directly written sawtooth structure in the DSHF cladding along the fiber core through the slow axis (i.e., the direction perpendicular to the dual-hole axis). The sawtooth structure serves as an in-fiber stressor and also generates Bragg resonance due to its periodicity. The DSHF was etched by hydrofluoric acid to increase its pressure sensitivity, and the diameter of two air holes was enlarged from 38.2 to 49.6 µm. A Hi-Bi FBG with a birefringence of up to 1.8 × 10-3 was successfully created in the etched DSHF. Two distinct reflection peaks could be observed by using a commercial FBG interrogator. Moreover, pressure measurement from 0 to 3 MPa at a high temperature of 700°C was conducted by monitoring the birefringence-induced peak splits and achieved a high-pressure sensitivity of -21.2 pm/MPa. The discrimination of the temperature and pressure could be realized by simultaneously measuring the Bragg wavelength shifts and peak splits. Furthermore, a wavelength-division-multiplexed (WDM) Hi-Bi FBG array was also constructed in the DSHF and was used for quasi-distributed high-pressure sensing up to 3 MPa. As such, the proposed femtosecond laser-inscribed Hi-Bi FBG is a promising tool for high-temperature pressure sensing in harsh environments, such as aerospace vehicles, nuclear reactors, and petrochemical industries.

Design and implementation of a kind of high precision temperature compensating system for silicon-on-sapphire pressure sensor

In order to reduce the temperature effects on the testing accuracy of the silicon-on-sapphire high-temperature large-range pressure sensor, a miniaturized portable silicon-on-sapphire pressure sensor temperature compensation system is designed and implemented after solving the following three issues: temperature compensation structure design, temperature compensation circuit fabrication, and temperature compensation algorithm implementation. The simulation results indicated that the temperature of the test circuit part of the package structure is close to 30 °C at an ambient temperature of 30 °C, with the sensor sensitive element at 250 °C working temperature and 28 MPa ultimate pressure. Regarding to the problem of large sensor drift in high-temperature environments, a temperature compensation algorithm combining least squares and Lagrange interpolation is designed based on the input and output characteristics of the sensor. The algorithm improves the computational efficiency while also increasing the hysteresis error and nonlinear deviation of the sensor to 0.028%. The test results of the NIM (National Institute of Metrology, China) show that the measurement accuracy of the sensor is higher than 1‰ FS within −20 °C to 140 °C and higher than 3‰ FS within 140 °C to 250 °C.

Optical fiber high-temperature pressure sensor with weak temperature sensitivity

In aerospace, petrochemical, gas turbines and other high-temperature environments, pressure measurement of equipment has always been a challenge to be solved. The electrical high temperature pressure sensor has the problem of component failure in high temperature environment, and it is difficult to use in the high temperature environment for a long time. The detection device of the optical fiber sensor does not include electrical components, so it has the advantages of high working temperature, high measurement accuracy, anti-electromagnetic interference and so on. In order to use a sensor to measure pressure in high temperature environment, a temperature-weakly sensitive optical fiber micro-electro-mechanical system (MEMS) pressure sensing technology is proposed. The technique uses extrisic Fabry-Pérot interference (EFPI) model. It uses the MEMS pressure chip to passively modulate the optical signal of the interference, and then realizes the pressure signal measurement. Among them, MEMS pressure sensitive chip is the core component of the sensor. The MEMS pressure sensitive chip adopts the design method of all solid state vacuum absolute pressure. Change in environmental pressure will deform the membrane. This phenomenon can cause change in the cavity of the EFPI cavity. Therefore, stress information can be obtained by measuring changes in EFPI cavity. The thermal stress and temperature parasitical response introduced by thermal expansion of the material are calculated by simulation. The influence of temperature signal on chip displacement is analyzed by the above results. On this basis, a prototype of high temperature pressure sensor is developed by combining the sub-micron white light interference response technology and low thermal stress packaging technology. In order to test the ability of the sensor to implement actual measurement, this paper carry out the pressure test and high temperature test respectively. When the pressure changes from 0 kPa to 100 kPa, the spectral intensity of the sensor output has a linear relationship with the pressure. During the temperature changing from 20–400 ℃, the spectral intensity of the sensor output does not change significantly. The experimental test results show that the pressure measurement of 0–100 kPa can be satisfied in the range of 20–400 ℃, and the measurement error introduced by temperature change is less than 4%. Therefore, the fiber pressure sensor can be used to measure the pressure in high temperature environment.

Evolution of conductive phase in SiCN ceramics for high piezoresistivity performance at high temperatures

Precursor-derived SiCN ceramics have been demonstrated to exhibit outstanding piezoresistivity in their amorphous state, making them suitable for application as high-temperature pressure sensors. This study reveals that partially crystallized SiCN ceramics exhibit an even higher piezoresistive coefficient of almost 11,000. From a microscopic perspective, it was previously believed that the excellent piezoresistive performance of precursor-derived ceramics (PDCs) originated from the pressure sensitivity of free carbon in the structure. However, this study has revealed that in partially-crystallized SiCN PDCs, several phases including free carbon, SiC, and Si can also exhibit conductivity. The critical factor that contributes to high piezoresistivity is the proximity between the concentration of conductive phases and the percolation threshold, leading to exceptional pressure sensitivity of SiCN ceramics.

High sensitivity temperature and gas pressure sensor based on PDMS sealed tapered hollow-core fiber

We use hollow core fiber (HCF) and single mode fiber (SMF) fusion splicing to form a sensor with a “SMF-HCF-SMF” structure. To improve the sensitivity of the sensor, the HCF is tapered and stretched to a waist diameter of 10 μm. Then, in order to further improve the sensitivity of the sensor to temperature and pressure, as well as the mechanical strength of the sensor, we coated a layer of polydimethylsiloxane (PDMS) thin film on the surface of the tapered HCF. When light propagates in the sensor, an anti-resonant reflection optical waveguide (ARROW) mechanism is formed. Due to the excellent thermal sensitivity and elasticity of PDMS, the transmission spectrum of the sensor will significantly drift due to changes in environmental temperature and gas pressure, achieving temperature and pressure measurement. The experimental results show that the maximum temperature and gas pressure sensitivity of the sensor reach −3.2321 nm/℃ and −22.80 nm/MPa, respectively. In addition, the sensor also has good repeatability and stability, as well as short response time. It has certain application prospects in the field of high sensitivity temperature and gas pressure sensing measurement.

Materials and Sensing Mechanisms for High-Temperature Pressure Sensors: A Review

Materials and Sensing Mechanisms for High-Temperature Pressure Sensors: A Review

Ultra-small high‐temperature pressure sensor chips fabricated in single‐layer (111) SOI wafers

This paper presents a 0.5 mm × 0.5 mm tiny-sized high-temperature piezoresistive pressure sensor fabricated with a thin-film under bulk single-sided micromachining process from the front-side of single-layer (111) silicon on insulator (SOI) wafer. The (111)-device layer of the SOI wafer is specifically selected to optimize the piezoresistor performance where the SiO2 buried layer isolates the piezoresistors from the handle substrate. And the (111)-handle layer is employed to subtly construct a single-crystalline-silicon beam-island combining with a very thin but uniform poly-silicon diaphragm for realization of both low nonlinearity and high sensitivity. Without double-sided micromachining process and wafer bonding used, a tiny sensor-chip size of 0.5 mm × 0.5 mm is achieved, which is required in wind-tunnel systems for measuring pressure distribution at high temperature. The testing results of the fabricated sensor show high sensitivity of 0.15 mV V−1 kPa−1 for 150 kPa measure range and satisfactory linearity of ±0.11% FS (full scale) at ambient temperature. At 350 °C, the overall accuracy is 0.17% FS and the thermal hysteresis is 0.22% FS. The temperature coefficient of zero-point offset of the sensor is tested as low as 0.01% °C−1 FS and the temperature coefficient of sensitivity is −0.07% °C−1 FS within the whole temperature range from −55 °C to 350 °C. Featuring the advantages of high accuracy and high-yield low-cost fabrication, the tiny-sized high-temperature pressure sensors exhibit promising perspectives in the field of aerospace industry including wind-tunnel applications.

Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method

The processing, particularly, etching of brittle, hard, and anti-corrosion materials represented by the third-generation wide bandgap semiconductor silicon carbide (SiC), is a significant challenge. Although SiC has excellent electrical, mechanical, and chemical properties, the difficulty of processing limits its application in various sensor devices. To solve this problem, in this study, an integrated processing method of femtosecond laser-assisted SiC dry etching is proposed, which realizes high surface quality and high rate etching of the SiC microstructure. Specifically, the effects of different laser processing parameters on the processing effect were first studied through orthogonal experiments. Experiments indicate that compared with laser power and laser scan times, laser processing speed has a more obvious impact on the processing effect. Subsequently, considering the elastic modulus anisotropy of SiC, a 5 MPa piezoresistive pressure sensor chip was designed. Using the proposed composite processing method, a chip sensitive diaphragm was obtained. The diaphragm thickness and diameter are 76 μm and 1700 μm respectively. The overall sensor chip dimension was 4000 μm × 4000 μm × 350 μm. Static tests demonstrated that the sensor have excellent performance with sensitivity of 6.8 mV/MPa, linearity of 0.69% FS, and repeatability of 0.078% FS. In addition, by designing high-temperature packaging, the sensor achieved a pressure test at 400 °C. This study verifies the feasibility of the composite processing method, realizes the fabrication and measurement of high-temperature pressure sensors, and provides a reference for the micro-and nanostructure processing of various SiC sensors.

A micro graphene high temperature sensor with a single Si3N4 protective layer

Temperature sensors are widely used in industrial production, national defense and military fields. The traditional temperature sensors normally operate in a limited temperature range no more than 200 °C, which cannot be used for extreme high temperature detections. In this paper, a thermal protection method for the sensing graphene membrane is proposed and a graphene high temperature sensor has been fabricated and investigated. By growing a single silicon nitride (Si3N4) protective layer on top of graphene, our design not only solves the problem that graphene is easily oxidized at high temperature, but also prevents graphene from being polluted by impurities, which would lead to the degradation of graphene performance. We further explore the protective effect of Si3N4 layer with different thicknesses on the performance of the sensor. It has been found that the 400 nm Si3N4 protective layer gives the best protective capability. The sensor exhibits a positive temperature coefficient (PTC) from 50 to 600 °C and a maximal temperature coefficient of resistance (TCR) value of 0.29% °C−1 at 150 °C is achieved. It has been demonstrated that our graphene high temperature sensor with protective layer structure maintains good stability not only at high temperature up to 600 °C, but also over a long-period of time under room temperature. In short, the high temperature sensor possesses a wide temperature measurement range with micro dimensions, a relatively high TCR and a smaller thermal hysteresis. The thermal protection approach proposed in this paper provides a new idea for the fabrication of high temperature pressure sensor, which is expected to be applied in aerospace engines and oil wells, etc.

Compact highly sensitive Fabry-Perot temperature and gas pressure sensing probe fabricated by a femtosecond laser and PDMS.

A high sensitivity optical fiber temperature and gas pressure sensor with integrated micro-cavity is proposed. First, a single-mode optical fiber (SMF) is spliced with a section of capillary, and then the sensitive material polydimethylsiloxane (PDMS) is filled into the capillary to form a Fabry-Perot interferometer (FPI). Finally, a femtosecond laser is used to ablate the fiber core of the SMF to form the third reflecting surface, constituting two cascaded FPIs. When two FPIs have a similar free spectral range, a Vernier effect is produced. The temperature and gas pressure sensitivity of the sensor reached 14.41 nm/°C and 113.82 nm/MPa, respectively, after using the sensitive material and Vernier effect double sensitization technology. In addition, a fiber Bragg grating is cascaded with the sensor, which can realize the simultaneous measurement of temperature and gas pressure and eliminate cross-sensitivity.

Design and Fabrication of a High-Temperature SOI Pressure Sensor with Optimized Crossbeam Membrane.

This paper presents a SOI piezoresistive pressure sensor with the crossbeam membrane. The roots of the crossbeam were widened, which solved the problem of the poor dynamic performance of small-range pressure sensors working at a high temperature of 200 °C. A theoretical model was established to optimize the proposed structure, which combined the finite element and the curve fitting. Using the theoretical model, the structural dimensions were optimized to obtain the optimal sensitivity. During optimization, the sensor nonlinearity was also taken into consideration. The sensor chip was fabricated by MEMS bulk-micromachining technology, and Ti/Pt/Au metal leads were prepared to improve the sensor ability of high-temperature resistance over a long time. The sensor chip was packaged and tested, and the experimental results show the sensor achieved an accuracy of 0.241% FS, nonlinearity of 0.180% FS, hysteresis of 0.086% FS and repeatability of 0.137% FS at the high temperature. Given the good reliability and performance at the high temperature, the proposed sensor provides a suitable alternative for the measurement of pressure at high temperatures.

A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor.

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of -55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and electrical properties at high temperatures. However, SiC is difficult to process which hinders its application as a high-temperature pressure sensor. This study proposes a piezoresistive SiC pressure sensor fabrication method to overcome the difficulties in SiC processing, especially deep etching. The sensor was processed by a combination of ICP (inductive coupled plasma) dry etching, high-temperature rapid annealing and femtosecond laser deep etching. Static and dynamic calibration tests show that the accuracy error of the fabricated sensor can reach 0.33%FS, and the dynamic signal response time is 1.2 μs. High and low temperature test results show that the developed sensor is able to work at temperatures from -50 °C to 600 °C, which demonstrates the feasibility of the proposed sensor fabrication method.

A Novel High-Temperature Pressure Sensor Based on Graphene Coated by Si3N4

The high-temperature pressure sensors have wide applications in aerospace, petroleum, geothermal exploration, automotive electronics, and other fields. However, the traditional silicon-based pressure sensors are restricted to pressure measurement under <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$120~^{\circ }\text{C}$ </tex-math></inline-formula> and cannot be satisfied to measure the pressure of various gases or liquids in high temperature and other harsh environments. This article proposes a novel high-temperature pressure sensor based on graphene, in which a rectangular cavity is applied to improve the piezoresistive characteristics of the sensor. The unique of this sensor is that the graphene is coated by the silicon nitride (Si3N4) membrane, which could avoid the oxidation of graphene in high temperature and increase the temperature tolerance range. The sensor was placed at various temperatures ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50~^{\circ }\text{C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$420~^{\circ }\text{C}$ </tex-math></inline-formula> ) to explore the temperature characteristics, achieving a maximal temperature coefficient of resistance (TCR) of 0.322% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ }\text{C}^{-{1}}$ </tex-math></inline-formula> . Moreover, the sensor with a 64 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 9\,\,\mu \text{m}^{{2}}$ </tex-math></inline-formula> cavity has a high pressure sensitivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.32\times 10^{-{4}}$ </tex-math></inline-formula> kPa <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{1}}$ </tex-math></inline-formula> , enabling a wide range from 100 kPa to 10 Pa. Experimental results indicate that the proposed sensor possesses superior pressure sensitivity, a wide pressure detection range, and a high-temperature tolerance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$420~^{\circ }\text{C}$ </tex-math></inline-formula> , which provides new insight into fabricating high-temperature pressure sensors based on graphene and creates more applications in different fields.

Study on The Technology of Optical Fiber High-Temperature Pressure Sensor with Weak Temperature Sensitivity

In aerospace, petrochemical, gas turbines and other high-temperature environments, pressure measurement of equipment has always been a challenge to be solved. The electrical high temperature pressure sensor has the problem of component failure in the high temperature environment, and it is difficult to use in the high temperature environment for a long time. The detection device of the optical fiber sensor does not include electrical components, so it has the advantages of high working temperature, high measurement accuracy, anti-electromagnetic interference and so on. In order to measure pressure in high temperature environment with sensor, a temperature-weakly sensitive optical fiber Micro-Electro-Mechanical System (MEMS) pressure sensing technology is proposed. The technique uses Extrisic Fabry-Perot Interference (EFPI) model. It uses the MEMS pressure chip to passively modulate the optical signal of the interference, and then realizes the pressure signal measurement. Among them, MEMS pressure sensitive chip is the core component of the sensor. The MEMS pressure sensitive chip adopts the design method of all solid state vacuum absolute pressure. Changes in environmental pressure will deform the membrane. This phenomenon can cause changes in the cavity of the EFPI cavity. Therefore, stress information can be obtained by measuring changes in EFPI cavity. The thermal stress and temperature parasitical response introduced by thermal expansion of the material are calculated by simulation. The influence of temperature signal on chip displacement is analyzed by the above results. On this basis, combined with the sub-micron white light interference response technology and low thermal stress packaging technology, the high temperature pressure sensor prototype is developed. In order to test the actual measurement ability of the sensor, this paper does the pressure test and high temperature test respectively. When the pressure changes from 0kpa to 100kpa, the spectral intensity of the sensor output has a linear relationship with the pressure. During the temperature change from 20℃ to 400℃, the spectral intensity of the sensor output did not change significantly. The experimental test results show that the pressure measurement of 0~100kPa can be satisfied in the range of 20~400℃, and the measurement error introduced by temperature change is less than 4%. Therefore, the fiber pressure sensor can be used to measure pressure in high temperature environment.