High-temperature Piezoelectric Ceramics Research Articles

Synergistic Design Strategy for Enhancing the Piezoelectric Performance of BiFeO3-Based High-Temperature Piezoelectric Ceramics

A novel synergistic strategy was used to improve the piezoelectric characteristics of high-temperature piezoelectric ceramics. This work combined three commonly used strategies, constructing the Morphotropic Phase Boundary to reduce energy barriers, changing domain structures impacting macroscopic piezoelectric properties, and adjusting BO6 octahedral distortions reflecting microstructural changes, thus effectively regulating the piezoelectric behaviors of BiFeO3-based ceramics. As a result, the 0.67BiFeO3-0.32BaTiO3-0.01BiAlO3 component, exhibiting the maximum distortion of the BO6 octahedron and the coexistence of macrodomains and nanodomains, achieved the optimal piezoelectric characteristics (d33 = 225±10 pC N-1, TC = 450 °C). Additionally, the ceramic maintained its high piezoelectric properties even at temperatures as high as 280°C (346 pC N-1). This study presents a novel collaborative design strategy that combines phase structure, domain structure, and BO6 octahedral distortion, significantly enhancing the development potential of lead-free high-temperature piezoelectric materials in the future.

BiScO3-PbTiO3 based high temperature piezoelectric ceramics composite ultrasonic transducer

Utilizing the electrical resonance method, matrices encompassing elastic, piezoelectric, and dielectric properties were calculated for 0.36BiScO3-0.64PbTiO3 (BSPT) ceramics. The design parameters for the BSPT/epoxy 2-2 composite material were meticulously elucidated through simulations conducted via COMSOL software. Characterization outcomes unveil that the synthesized composite material exhibits diminished acoustic impedance and heightened electromechanical coupling in comparison to its piezoelectric ceramic counterparts. Subsequent to the design and fabrication of ultrasonic transducers employing both BSPT ceramics and BSPT/epoxy 2-2 composite material, a thorough investigation into their electrical and acoustic attributes ensued at ambient temperature and 200 °C. Test results manifest that the BSPT/epoxy 2-2 composite high temperature ultrasonic transducer (CHTUT) demonstrates a center frequency and bandwidth of 4.52 MHz and 54.71%, respectively, at room temperature. While, at 200 °C, these parameters are 3.54 MHz and 80.79%. The HTUT, under parallel scrutiny, exhibits a center frequency and bandwidth of 4.65 MHz and 34.23% at room temperature, respectively, and 4.52 MHz and 29.65% at 200 °C. These findings prove the robust ultrasonic performance of the CHTUT, even under elevated temperatures, with the BSPT ceramic based counterpart demonstrating superior temperature stability. Furthermore, the results of an imaging experiment involving steel step blocks at both room temperature and 200 °C align consistently with the acoustic test outcomes.

The impact of co-doping Ce, W, and Mn on the microstructure and piezoelectric performance of high-temperature piezoelectric ceramics based on CaBi2Nb2O9

CaBi2Nb2O9 (CBN) is a bismuth layered ferroelectric material with extremely high Curie temperature and low dielectric loss, which has great application potential in ultra-high temperature field. However, because of its low piezoelectric coefficient, its practical application still faces great challenges. This study successfully prepared Ca1-xCexBi2Nb1.98(W2/3Mn1/3)0.02O9 (x = 0–0.05) two-layer ferroelectric ceramics using direct-reaction sintering method. A pseudo tetragonal structure was successfully constructed near x = 0.02 using the substitution method of Ce4+ at site A, and W6+ and Mn4+ at site B, which altered the crystal structure of CBN based ceramics. The properties of CBN-based piezoelectric ceramics have been significantly improved by this modification. It has a higher piezoelectric constant (d33 = 20.6 pC/N) and Curie temperature (Tc = 950 °C), while having a lower dielectric loss (tanδ = 0.031 at 500 °C). In addition, CaBi2Nb2O9 based piezoelectric ceramics also show excellent thermal stability. After annealing at 900 °C for 2 h, the d33 value remained high at 19.2 pC/N, retaining about 93.2% of its original value. Therefore, these findings indicate that Ca1-xCexBi2Nb1.98(W2/3Mn1/3)0.02O9 is a high-temperature piezoelectric material with great potential.

Low electric field induced large electromechanical properties of BiFeO3-BaTiO3-based ceramics via phase composition modulation

The development of high-temperature lead-free piezoelectric ceramics with excellent electromechanical properties under low field remains a key challenge. A series of 0.995(xBiFeO3-(1-x)BaTiO3)-0.005Bi(Zn0.5Hf0.5)O3 ceramics were designed via modulating phase composition. The excellent electromechanical properties of d33⁎ = 511 pm/V (45 kV/cm) at room temperature and S = 0.476% (d33⁎ = 1190 pm/V, 40 kV/cm) at 120 ℃ were achieved in the x= 0.67 ceramic owing to the synergistic contribution of phase composition and domain evolution. The XRD results verify that the x= 0.67 ceramic is dominated by the pseudocubic phase. The PFM results in the x= 0.67 and 0.71 ceramics confirm that the domain structures consist of nanodomains with strong and weak piezoelectric responses. More importantly, the temperature and voltage-dependent domain evolution testify the nanodomains are easier to switch in the x= 0.67 ceramic. This work provides a strategy to optimize the electromechanical performance at the low field and a deeper understanding of BF-BT-based piezoceramics.

Quenching-driven advancements in functional properties of high-temperature lead-free Sc, Ga modified 0.67BiFeO3-0.33BaTiO3 relaxor ceramics

The processing method is one of the most important deciding factors in the fabrication of BiFeO3–BaTiO3 (BF-BT) based piezoceramics because of the Bi2O3 volatization. It significantly influences the functional properties, including the piezoelectric coefficients, dielectric properties, and microstructure. This study presents a significant advancement in the realm of high-temperature lead-free piezoelectric ceramics in terms of understanding effects of processing method on functional properties. In this light, a novel ceramic solid-solution, 0.67{Bi(Fe0.97Ga0.03)1-xScxO3}-0.33(BaTiO3) with x ≤ 0.07, incorporating Scandium (Sc) and Gallium (Ga) modifications, was meticulously designed and synthesized. Impact of two distinct sintering methods, namely air quenching (AQ) and closed sintering (CS) on the structure and properties of the developed materials are investigated. X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) analysis verified the formation of pure perovskite phases with successful incorporation of Sc and Ga into the 0.67BF-0.33BT lattice. The FTIR analysis revealed a sharp absorptive band in the 590-604 cm−1 range, corresponding to the signature of stretching and bending vibrations of (Ti/Fe)O6 octahedra. Rietveld structure refinement confirmed the coexistence of pseudocubic (Pm-3m) and rhombohedral (R3c) phases in AQ samples, with predominantly pseudocubic phase, while CS samples closely approximated the pseudocubic phase. The microstructure of the samples exhibits small average grain size distribution (<2 μm). Temperature-dependent dielectric measurements show strong frequency dispersion in the dielectric permittivity with broadened transition peaks. The ferroelectric studies reveal low Pr and Ec values. These observations suggest a ferroelectric relaxor-like behavior of the developed materials. Moreover, the permittivity peaks maxima (Tm) temperature corresponding to CS samples for 0.04<x < 0.07 is less than 390 °C at 10 Hz while it is above 400 °C for AQ samples. The results of our study reveal that AQ samples exhibit superior electrical and ferroelectric properties as compared to the CS samples. The AQ samples demonstrate improvements in Tm (>400 °C), d33(∼35 pC/N), Pr (∼4–11 μC/cm2), PS (∼8–21 μC/cm2), Ec (∼13–25 kV/cm) with reduced dielectric loss, and a better dielectric constant over a wide temperature range.

Achieving superior electrical performance of high-temperature piezoelectric ceramics for high-power applications via MnO2 doping and intentional Ti nonstoichiometry for inhibiting pyrochlore phase

Achieving superior electrical performance of high-temperature piezoelectric ceramics for high-power applications via MnO2 doping and intentional Ti nonstoichiometry for inhibiting pyrochlore phase

Structural mechanisms of large piezoelectric responses in BiFeO3-PbTiO3 based solid-solution ceramics

Achieving large piezoelectric response and high Curie temperature, simultaneously, are of great demand but have been rarely achieved in BiFeO3-PbTiO3 (BF-PT) based morphotropic phase boundary (MPB) systems. In this work, in-situ synchrotron x-ray diffraction and transmission electron microscopy were carried out in BF-PT-0.19Ba(Zr,Ti)O3 high-temperature piezoceramic, a recently reported MPB composition with high piezoelectric coefficient, to elucidate the underlying structural mechanism. A field induced irreversible transition from tetragonal (T) P4mm phase to rhombohedral (R) R3c phase is identified although R and T phases are still coexisted after poling. This induces the significantly enhanced irreversible domain switching of both R and T phases and the reversible domain switching of R phase but only a slightly enhanced reversible switching of T phase of as compared with other BF-PT-x Ba(Zr,Ti)O3 MPB compositions, leading to the significant increase of lattice strain up to ∼0.15% but only a slightly increase of strain from extrinsic domain switching due to the strong coupling between lattice strain and domain switching in both R and T phases, although the strain contribution seems to be composition independent after the field induced irreversible phase transition. The present study demonstrates a new performance enhancement mechanism to design the high-performance BF-PT based high-temperature piezoelectric ceramics in terms of the different roles of R and T phases within MPB.

Structure, Electrical Properties, and Thermal Stability of the Mn/Nb Co-Doped Aurivillius-Type Na0.5Bi4.5Ti4O15 High Temperature Piezoelectric Ceramics

In order to meet the urgent need for high temperature piezoelectric materials with a Curie temperature over 400 °C, the Mn/Nb co-doped strategy has been proposed to improve the weak piezoelectric performance of the Aurivillius-type Na0.5Bi4.5Ti4O15 (NBT) high temperature piezoelectric ceramics. In this paper, the crystal structure, electrical properties, and thermal stability of the B-site Mn/Nb co-doped Na0.5Bi4.5Ti4-x(Mn1/3Nb2/3)xO15 (NBT-100x) ceramics were systematically investigated by the conventional solid-state reaction method. The crystal structural analysis results indicate that the NBT-100x ceramics have typical bismuth oxide layer type phase structure and high anisotropic plate-like morphology. The lattice parameters and the grain sizes increase with the B-site Mn/Nb co-doped content. The electrical properties were significantly improved by Mn/Nb co-doped modifications. The maximum of the piezoelectric coefficient d33 was found to be 29 pC/N for the NBT-2 ceramics, nearly twice that of the unmodified NBT ceramics. The highest values of the planar electromechanical coupling factor kp and thickness electromechanical coupling factor kt were also obtained for the NBT-2 ceramics, at 5.4% and 31.2%, respectively. The dielectric spectroscopy showed that the Curie temperature Tc of the Mn/Nb co-doped NBT-100x ceramics is slightly higher than that of unmodified NBT ceramics (646 °C). The DC resistivity of the NBT-2 ceramics is higher than 106 Ω∙cm at 500 °C. All the results together with the good thermal stability demonstrated the Mn/Nb co-doped ceramics as an effective method to improve the NBT based piezoelectric ceramics and the potential candidates of the Mn/Nb co-doped NBT-100x ceramics for high temperature piezoelectric applications.

Enhanced piezoelectric response of Aurivillius ferroelectrics by constructing a novel solid solution and combining traditional chemical substitution

With the increasing demand for high-temperature piezoelectric ceramics, excellent piezoelectricity and high Curie temperature are required simultaneously. Herein, combining the advantages of constructing new-type solid solutions and traditional A-site doping strategy, Aurivillius ferroelectrics (Na0.5Bi0.5)0.5−x/2(Li0.5Ce0.5)x/2Bi2.5Ti0.5Nb1.5O9 (NBTN-LC100x, x = 0–0.16) were designed to achieve the large piezoelectric response and high Curie temperature simultaneously. The existence of a pseudo-tetragonal phase boundary together with the reduction of domain size produces a large piezoelectric coefficient (d33 ∼ 24.6 pC/N) with a fairly high TC (∼825 °C). Moreover, pseudo-tetragonal distortion might be responsible for the excellent thermal stability of d33 against thermal depolarization temperature (Td). For NBTN-LC12, high-temperature electric resistivity is still above 1 × 105 Ω cm at 600 °C. The improved comprehensive properties of NBTN-LC100x ceramics demonstrate that the construction of a novel Aurivillius ferroelectrics is a promising way to explore high-temperature sensor materials.

Texture technique to achieve enhanced piezoelectric response in BiScO3–PbTiO3 high-temperature piezoelectric ceramics

The first report focused on the effect of various BaTiO3 templates on BS-60PT textured ceramics and realization of outstanding piezoelectric response.

Realization of high piezoelectric performance in bismuth titanate niobate via B-site mixed-valance doping

Aurivillius-compound Bi3TiNbO9 (BTN) based high-temperature piezoelectric ceramics doped with mixed-valence cations (Mo1/3Cr2/3)4+ at the lattice B-sites, Bi3Ti1−x(Mo1/3Cr2/3)xNbO9 (BTN-MC100x, x = 0 −0.07), were prepared via the solid-state reaction method. The incorporation of the (Mo1/3Cr2/3)4+ ions into the BTN lattice promotes the preferential growth of grains along the a-axis, making it easier for polarization vector to flip. The optimized composition BTN-MC5 ceramic had a large d33 of 20.3 pC/N with a high TC of 901 °C. It was found that the donor doping effect of (Mo1/3Cr2/3)4+ and the formation of (CrTi′–VO⋅⋅–CrTi′)×defect dipoles contribute to reduce the concentration of oxygen vacancies, thus increasing the resistivity (2.2 ×105 Ω cm at 600 °C). In addition, the d33 of the BTN-MC5 ceramic exhibits an excellent thermal stability against depoling temperature Td. These findings indicate that the BTN-MC5 ceramic is promising candidate for the preparation of high-temperature piezoelectric sensors.

Effect of ions substitution with different radii on BO6 octahedral distortion of Bi3TiNbO9 high temperature piezoelectric ceramics

• High temperature piezoelectric properties of BTNO-15WM ceramics were studied. • The influence of ions with different radii on the distortion of BTNO is similar. • The distortion mode of A/B co-doped BTNO is inclined to “tilt” mode. Bi 2.99 (Li 0.5 Sm 0.5 ) 0.01 Ti 0.985 (W 2/3 M 1/3 ) 0.015 NbO 9 (abbreviated as B(LS)TNO-15WM, M is Al, Cr, and Sc) were prepared by solid state reaction sintering. The effects of B-site (W 2/3 M 1/3 ) 5+ complex-ion substitution on and their microstructure, piezoelectric properties, and electrical performance were systematically studied. B(LS)TNO-15WCr obtains the highest piezoelectric coefficient ( d 33 ). Through the calculation of XRD refined results, it is found that this is due to its greater distortion of BO6 octahedron. In this work, the possible sources of high performance of BTNO based ceramics doped at B-site are analyzed, which provides a certain theoretical support for future work.

Low-temperature preparation and electrical properties of CaBi2Nb2O9 piezoelectric ceramic by addition of B2O3

CaBi2Nb2O9 ceramics were fabricated via the solid-state reaction method by the addition of B2O3 as a sintering aid at lower sintering temperatures than that prepared without B2O3. Ferroelectricity, piezoelectricity, and resistivity can be still greatly enhanced when the sintering temperature is decreased from 1075 °C for CaBi2Nb2O9 to 975 °C for CaBi2Nb2O9–0.25 wt. % B2O3. The high resistivity and weak c-axis texture ensure that the ceramics can be fully polarized in a high enough electric field. The increased spontaneous ferroelectric and remanent polarization result in a significant enhancement in the piezoelectric properties of CaBi2Nb2O9–0.25 wt. % B2O3. The sample sintered at 975 °C possesses a high piezoelectric coefficient d33 of ∼15.0 pC/N and resistivity of 1.4 × 106 Ω cm (at 600 °C) along with a high ferroelectric Curie temperature TC of ∼954 °C. This work is beneficial for the preparation of high-temperature piezoelectric ceramics with excellent electrical properties at a low sintering temperature.

Electrical properties of Bi2.99(Li0.5Sm0.5)0.01Ti1-x(Mn1/3Ta2/3)xNbO9 high-temperature piezoelectric ceramics via oxygen vacancy defects tailoring

Tribismuth titanium niobium oxide (B3TiNbO9, BTNO) is one of the Aurivillius phases with the highest Curie temperature (Tc), but its piezoelectric coefficient (d33) is poor. When x = 0.045, high-temperature piezoelectric ceramics with d33 of 11.9 pC/N and Tc of 916.7 °C were prepared by (Mn1/3Ta2/3)(4+ω)+ modification of Ti4+ at B-site of Bi2.99(Li0.5Sm0.5)0.01Ti1-x(Mn1/3Ta2/3)xNbO9. The substitution will aggravate the distortion of BO6 octahedron due to the displacement of oxygen ions. The existence of Mn3+ in the dopant will act as an oxygen vacancy trap and then increase the resistivity. As a result, BTNO ceramics have enhanced piezoelectric properties as well as temperature and cycle stability. This work provides a theoretical basis for better high-temperature piezoelectric properties of A/B co-doped Aurivillius phase ceramics in the future.

Effects of lanthanide ions on the structure and electrical properties of Aurivillius Bi3TiNbO9 high temperature piezoelectric ceramics

Aurivillius Bi3TiNbO9 has a very high Curie temperature (Tc), but the piezoelectric coefficient (d33) is very low, and the influence of ions with different radii on its performance is not clear. High temperature piezoelectric ceramics Bi2.99(Li0.5Ln0.5)0.01TiNbO9 (BTNO-1LiLn, Ln = La, Nd, Gd, and Er) were prepared by solid state reaction sintering, and its microstructure, piezoelectric properties and electrical conductivity were systematically studied. The Tc of BTNO-1LiLn increases with the decrease of Ln3+ ions radii. BTNO-1LiEr obtains the highest d33 of 10.6 pC/N. Considering the cation disorder of A-site and bismuth layer of calcium titanium layer in Aurivilius structure, the crystal structures of BTNO-1LiLa with special occupation and BTNO-1LiEr with the best performance are refined, and the source of spontaneous polarization (Ps) is analyzed. It is proved that different occupation will have different effects on the high temperature piezoelectric properties and fatigue cycle properties of BTNO based ceramics. Finally, the band structure of BTNO pure ceramic based on the first principle is calculated. By comparing the activation energy and band gap width, it is indicated that (Li0.5Ln0.5)2+ ions entering BTNO will form impurity energy levels and form p-type semiconductors. This study provides a theoretical basis for better performance of BTNO based high temperature piezoelectric ceramics.

Role of BO6 octahedral distortion on high temperature piezoelectric properties in Bi3-x(Li0.5Sm0.5)xTiNbO9

A series of bismuth layer structured ferroelectrics (BLSFs) Bi3-x(Li0.5Sm0.5)xTiNbO9 (abbreviated as BTNO-100xLS, x = 0, 0.01, 0.02, and 0.03) high temperature piezoelectric ceramics were prepared by solid state reaction sintering. The microstructure, piezoelectric properties, and electrical conductivity of the sintered ceramics were studied systematically. The introduction of (Li0.5Sm0.5)2+ ions does not change the bismuth layered structure obviously, but it will overmelt and affect its comprehensive properties with the increase of doping content. At last, the piezoelectric coefficient (d33) of ∼9.6 pC/N and the Curie temperature (Tc) is 921.3 °C, which shows good temperature stability and cycle stability, and the mechanical quality factor (Qm) reaches 2694.3 for x = 0.01 composition. These results show that BTNO-1LS is an excellent candidate for high temperature piezoelectric ceramics.

Achieving Superior Electrical Performance of High-Temperature Piezoelectric Ceramics for High-Power Applications Via Mno2 Doping and Intentional Ti Nonstoichiometry for Inhibiting Pyrochlore Phase

Achieving Superior Electrical Performance of High-Temperature Piezoelectric Ceramics for High-Power Applications Via Mno2 Doping and Intentional Ti Nonstoichiometry for Inhibiting Pyrochlore Phase

High temperature 0.63BiFeO3-0.37BaTiO3 based ceramics with large electromechanical properties by simple A-site K+ doping

Designing high temperature piezoelectric ceramics with large electromechanical properties is key to the actuators application in harsh environment. BiFeO3-BaTiO3 based piezoelectric ceramics are the promising candidates due to their high electromechanical properties and high Curie temperature. Here, the simple A-site single K+ doped 0.63Bi1−xKxFeO3-0.37BaTiO3 (abbreviated as 0.63B1−xKxF-0.37BT) ceramics with positive temperature dependent electromechanical properties were fabricated via conventional solid phase method. The electromechanical properties in the 0.63B1−xKxF-0.37BT ceramics are closely related to the content of K+ doping. The excellent electromechanical properties of S= 0.26% and d33*=861 pm/V under low electric field of 30 kV/cm at 105 ℃ are achieved in the 0.63B0.9975K0.0025F-0.37BT ceramic, which is conducive to their application at high temperature. Combined with the microstructure and PFM, the optimized electromechanical properties in 0.63B0.9975K0.0025F-0.37BT ceramic are mainly due to more nanodomains switching facilitated by the large grain size and local structural heterogeneity. The site engineering of A-site single ion doping is an efficient and simple strategy for BF-BT based piezoelectric ceramics to achieving excellent electromechanical properties under low electric field at high temperature.

Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi4Ti4O15 High-Temperature Piezoelectric Ceramics.

In this work, SrBi4Ti4O15 (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (Gd2O3, CeO2, MnO2 and Cr2O3) were fabricated by a conventional solid-state reaction route. The effects of oxide additives on the phase structures and electrical properties of the SBT ceramics were investigated. Firstly, X-ray diffraction analysis revealed that all these oxides-modified SBT ceramics prepared presented a single SrBi4Ti4O15 phase with orthorhombic symmetry and space group of Bb21m, the change in cell parameters indicated that these oxide additives had diffused into the crystalline lattice of SBT and formed solid solutions with it. The SBT ceramics with the addition of MnO2 achieved a high relative density of up to 97%. The temperature dependence of dielectric constant showed that the addition of Gd2O3 could increase the TC of SBT. At a low frequency of 100 Hz, those dielectric loss peaks appearing around 500 °C were attributed to the space-charge relaxation as an extrinsic dielectric response. The synergetic doping of CeO2 and Cr2O3 could reduce the space-charge-induced dielectric relaxation of SBT. The piezoelectricity measurement and electro-mechanical resonance analysis found that Cr2O3 can significantly enhance both d33 and kp of SBT, and produce a higher phase-angle maximum at resonance. Such an enhanced piezoelectricity was attributed to the further increased orthorhombic distortion after Ti4+ at B-site was substituted by Cr3+. Among these compositions, Sr0.92Gd0.053Bi4Ti4O15 + 0.2 wt% Cr2O3 (SGBT-Cr) presented the best electrical properties including TC = 555 °C, tan δ = 0.4%, kp = 6.35% and d33 = 28 pC/N, as well as a good thermally-stable piezoelectricity that the value of d33 was decreased by only 3.6% after being annealed at 500 °C for 4 h. Such advantages provided this material with potential applications in the high-stability piezoelectric sensors operated below 500 °C.

Excellent piezoelectric constant and thermal stability in BiScO3–PbTiO3 piezoelectric ceramics via domain engineering

The application of piezoelectric ceramics at high temperature is limited because they can't have both high piezoelectric coefficient and high Curie temperature. While, BiScO3–PbTiO3-based piezoelectric ceramics possessing high Curie temperature and piezoelectric properties simultaneously have drawn increasing attention due to their potential applications at high temperature. Here, we reported a novel compositional design of (1-x)[0.36BiScO3-0.64PbTiO3]-xBi(Sn1/3Nb2/3)O3 (abbreviated as BS-PT-xBSN). BS-PT-xBSN ceramic samples were synthesized by conventional solid state reaction method. According to the ternary phase diagram of BS-PT-xBSN ceramics brought up in this work, the morphotropic phase boundaries (MPB) were confirmed, which is located in the vicinity of x = 0.02. It canbe identified that the x = 0.02 sample near MPB has the optimal electric performance which are giant piezoelectric coefficient (d33 ∼ 450 pC/N, higher 18 % than undoped samples) and high Curie temperature (Tc ∼ 368 °C) as well as large remant polarization (Pr ∼ 46.6 μC/cm2). In addition, the variation of Pr is 3 % in the temperature range of 30–180 °C and the depolarization temperature of x = 0.02 ceramics is about 280 °C. Structural analysis such as in-situ PFM and TEM confirms that giant piezoelectricity and depolarization temperature are attributed to the appearance of nano-domain and complexity of domains as well as the stable domain configuration. This work not only reveal the high potential of BS-PT-xBSN for high-temperature piezoelectric applications but also open up a feasible approach to design new high-temperature piezoelectric ceramics.