Na0.25K0.25Bi2.5Nb2O9-based ceramics woule become one of the excellent candidate materials suitable for high-temperature applications, given that their piezoelectric properties can be effectively improved. In this work, a strategy of reducing the Bi content was used to improve the piezoelectric properties and thermal stability of Na0.25K0.25Bi2.5Nb2O9-based ceramics by means of designing the compositions of the Na0.25K0.25Bi2.5+xNb2O9+3x/2 (-100xBi-NKBN, x = 0, -0.01, -0.03, -0.05, -0.07, -0.10). The effect of the Bi deficiency on the crystal structure, microscopic morphology, and electrical properties of NKBN-based ceramics was systematically investigated. By comparison, the Na0.25K0.25Bi2.45Nb2O8.925 ceramic obtains a large d33 of 20 pC/N, a high Tc of 651 ℃, and a high resistivity ρdc of 3.3 × 105 Ω cm at 600 ℃. The results demonstrate that the good d33 mainly stems from the increased lattice distortion and reduced oxygen vacancy concentration. More importantly, the d33 value can maintain 97% of its initial value after it was annealed at 600 ℃, showing excellent thermal stability. This work provides a new idea for solving the problem of poor piezoelectricity of NKBN-based ceramics and lays the foundation for applying NKBN-based ceramics in the high-temperature field.
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