High Resistivity Si Research Articles

Beam test of n-type Silicon pad array detector at PS CERN

This work reports the test of an n-type silicon pad array detector at the CERN PS in the context of the future Forward Calorimeter (FoCal) detector. FoCal is a proposed upgrade in the ALICE detector operating within the pseudorapidity range of 3.2 < η < 5.8. It aims to measure direct photons, neutral hadrons, vector mesons, and jets for the study of gluon saturation effects in the unexplored region of low momentum fraction x (∼ 10-5–10-6). The prototype is a 8×9 n-type Si pad array detector with each pad occupying one cm2 area, fabricated on a 6-in, 325 ± 10 μm thick, and high-resistivity (∼ 7 kΩ cm) Si wafer, which is readout using the HGCROCv2 chip. The detector is tested using pion beams of energy 10 GeV and electron beams of energy 1–5 GeV. The measurements of the Minimum Ionizing Particle (MIP) response of pions and the shower profiles of electrons are reported.

Effect of Si substrate conductivity on surface acoustic wave resonator

A surface acoustic wave (SAW) filter’s bandwidth and quality are determined by its resonators’ electromechanical coupling coefficient (k2) and impedance ratio (IR). Research commonly focuses on the effects of piezoelectric material and cutting direction on these parameters. This paper investigates the effect of the conductivity of the Si substrate on k2 and IR through finite element method (FEM) simulations. A new model based on the modified Butterworth-van-Dyke (MBVD) model is presented. This new model takes into account the substrate parasitic capacitance and resistance to predict resonator performance on low resistivity (LR) Si piezoelectric on insulator (POI) substrates. Both high resistivity (HR) Si and LR-Si are utilized to fabricate POI SAW resonators, which are subsequently tested. The high conductivity of the Si support layer leads to a decrease in both k2 and IR. By employing Si substrates with different resistances during fabrication, it becomes possible to manufacture resonators with varying k2 values, thus meeting diverse bandwidth requirements for filters.

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111).

The high transport characteristics of AlGaN/GaN heterostructures are critical components for high-performance electronic and radio-frequency (RF) devices. We report the transport characteristics of AlGaN/GaN heterostructures grown on a high-resistivity (HR) Si(111) substrate, which are unevenly distributed in the central and edge regions of the wafer. The relationship between the composition, stress, and polarization effects was discussed, and the main factors affecting the concentration and mobility of two-dimensional electron gas (2DEG) were clarified. We further demonstrated that the mechanism of changes in polarization intensity and scattering originates from the uneven distribution of Al composition and stress in the AlGaN barrier layer during the growth process. Furthermore, our results provide an important guide on the significance of accomplishing 6 inch AlGaN/GaN HEMT with excellent properties for RF applications.

Selection of thin-film-integrable substrates for THz modulator

The integrable substrate for THz modulation directly influences both the quality of films and THz absorption. Currently, the available THz substrate candidate library is still not clear. Here, we have carried out a systematic investigation of commonly used commercial substrates, including Si, quartz SiO2, MgO, Al2O3, GdScO3 and TbScO3 in the range of 0.4–1.6[Formula: see text]THz. It is found that low resistance Si, TSO and GSO are certainly not appropriate for THz light modulation due to their relatively higher absorption and dielectric constant, while the rest show better THz transmittance, low refractive index and loss. However, the dielectric constant and refractive index of high resistance Si are generally two times larger than quartz SiO2, Al2O3 and MgO. Compared with Al2O3 and MgO, quartz SiO2 shows at least 50% lower dielectric constant, refractive index and absorption, making it the best candidate. Our research is believed to build the rich substrate candidate library for THz range light modulation.

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing

Realizing a germanane (GeH) film on insulating substrates is strongly required to understand its intrinsic electric properties in discussing the potential applications for the next-generation field-effect transistor channels. This study investigates the heteroepitaxial growth of CaGe2—the precursor of the GeH—films on a high resistive substrate of FZ-Si(111) using a molecular beam epitaxy with the deposition temperature (Tdepo) as a variable. X-ray diffraction and Raman spectroscopy analyses indicated that a metastable polytype of 2H was dominated in the epitaxial CaGe2 films; the Tdepo must be less than 700 °C to prevent Si diffusion from the substrates. We also synthesize GeH films by immersing some CaGe2 films in HCl acid solutions at a low temperature of −40 °C. Although the obtained grain size of GeH was still as small as several hundred nanometers, we believe that the present study is the first step in obtaining the GeH continuous films directly on insulators necessary for electrical characterizations.

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage Vg is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high Id-sat of 750 mA/mm and a low Vknee of 2.0 V and presents ft and maximum frequency (fmax) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor OPTIM can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

The paramount issues facing commercialization of GaN-on-Si RF devices include the inevitable wafer bowing and large thermal resistance when incorporating the conventional AlN/AlGaN multilayer or superlattice buffer for stress control. The large thermal resistance due to the strong phonon scattering by the AlGaN alloy and multiple interfaces of the AlN/AlGaN multilayer or superlattice buffer must be carefully addressed, which can significantly affect the performance and reliability of GaN-on-Si RF devices. In this letter, we report a successful growth of crack-free 2 μm-thick GaN film on 6 inch high-resistivity (>10 kΩ cm) Si with a single-layer AlN buffer. By virtue of a quasi-2D GaN nucleation on the AlN buffer layer, the as-grown GaN-on-Si wafer presents a tremendous reduction in warpage from 800 to less than 8 μm, while preserving a high crystalline quality. The full width at half maximum of x-ray diffraction of GaN (0002) and (102) planes are 457 and 509 arcsec, respectively, and the residual stress is as low as 0.2 GPa. The underlying physical mechanisms of the quasi-2D GaN nucleation layer involved in stress engineering and dislocation annihilation have been discussed in detail. This work paves the way for the fabrication of low-cost and high-performance GaN RF devices grown on HR-Si.

Fabrication of On-Silicon Aperture Coupled Patch Antenna Through Micromachining and Cu-Cu Thermocompression Bonding

This paper, for the first time, reports the fabrication of an on-Silicon aperture-coupled 3D Patch antenna using micromachining and low-temperature, low-pressure Copper(Cu)-Copper(Cu) thermo-compression bonding. Micromachining technique was used to reduce the effective dielectric constant of Silicon (Si), thereby increasing the radiation efficiency. One of the main challenges in fabricating the aperture coupled patch antenna on Si is the realization of its 3D structure. The top and bottom substrates of the 3D antenna have to be bonded together without disturbing the micromachined thin membrane. This was achieved using thermo-compression bonding under optimized temperature and pressure conditions with a 3 nm Gold (Au) passivation layer, which prevents the oxidation of the Cu layer underneath and thereby reducing the inter-diffusion barrier across the interface. The proposed fabrication process flow introduces the novelty of using bonding/stacking metal inter-layer as the common ground of the antenna. The device was fabricated on high resistivity Si wafers to minimize the conduction losses. Herein, we have fabricated an aperture coupled 3D patch antenna with a cavity depth of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$200\pm ~10\mu \text{m}$ </tex-math></inline-formula> , and the device characteristics were compared with the HFSS simulation results. The reliability of the fabricated antenna was assessed by bond strength analysis, cross sectional FESEM and TEM imaging. The on-chip antenna yielded a resonance frequency of 13.4 GHz, with VSWR 1.16. The radiation pattern of the antenna was also analyzed experimentally. This technology is the way forward to fabricating miniaturized high performance on-chip antennas.

Electrically Tunable Ge/Si VIS-Swir Photodetector

Ge-on-Si photodiodes have been firstly reported more than twenty years ago opening the way for the integration of IR photodetectors on Si. A tremendous development has been done, moving from vertically illuminated, stand-alone devices, to waveguide integrated arrays of photodetectors and CMOS integrated imagers. Usually, the Ge epilayer act as the absorbing material for the NIR radiation, while Si acts only as a substrate. Here we report on a dual-band Ge-on-Si photodetector where light detection can take place both within the Ge epilayer and the underlying Si substrate: the device responsivity can thus be tuned from the VIS to the SWIR spectral range by means of an external bias. Therefore, the presented device can be implemented as a VIR-SWIR CMOS compatible imager.Two photodiodes in a back-to-back configuration are formed by p-doping the back side of a high resistivity Si wafer and by epitaxially growing a p-i-n heterojunction Ge-on-Si layer on the front side (Fig.1a)). An external bias can be applied to the whole layer stack by means of ohmic contacts formed on the top Ge layer and on the wafer backside (Fig.1b)). When a positive bias is applied between the top and bottom contact, the Ge diode is forward biased while the Si diode is reversed biased. In such a configuration the photocurrent generated within the Si substrate by back illuminating the device, will flow through the external circuit and be detected. By reversing the bias polarity, still maintaining a backside illumination, the photocurrent will be generated within the Ge epilayer: in this way it is possible to tune the device responsivity simply by controlling the external bias. A TCAD model has been set up to optimize doping levels, in particular that of the Si substrate, determining the most effective position the p-n junction within the Si photodiode and investigating the role played by substrate thickness[1].According with the simulation outcome, a p-type layer has been formed on the backside of an intrinsic Si wafer by spin-on-dopant obtaining a boron-doped layer with an average concentration of 2×1019cm-3 and a thickness of ≈300nm. The epitaxial growth has been performed by low-energy plasma-enhanced chemical vapor deposition (LEPECVD).Firstly, a 200nm thick phosphorous-doped Si layer has been deposited at 760°C followed by 3 µm thick nominally undoped Ge, grown at 500°C. Six thermal annealing cycles between 600-780°C have been performed in-situ to reduce the threading dislocation density. As a final step 150nm of boron-doped Ge have been deposited.Ge mesas with dimensions ranging between 100-500µm have been realized by standard UV-lithography and dry etching on the Ge-on-Si epitaxial layer. The mesas have been etched down to the intrinsic Si surface to electrically isolate the different devices on the same chip. The top ohmic contacts have been realized by e-beam deposition of a Ti/Al metal stack and lift-off. Different bottom ohmic contact have been tested both by depositing two rectangular stripes of Ti/Au or by depositing a transparent ITO layer on the backside of the chip.Optical characterization was performed by means of a lamp-monochromator set-up. The VIS/SWIR bias dependent dual-band operation of the device is demonstrated in Fig.1c), where the spectral responsivity is shown for two different applied voltages. The peak responsivities are 0.41A/W and 0.63A/W at 960nm and 1520nm, respectively. The specific detectivity D* of the device has been found to be 7·1011cmHz1/2/W and 2·1010cmHz1/2/W in the VIS and NIR, respectively[2].VIS-SWIR single-pixel imaging was performed by mounting the chip on a rastering system comprising a three-axis stage. In this way the pixel can scan the image plane behind a piano-convex lens. Two images, one in the VIS and one in the SWIR, can be obtained by repeating the scanning and changing the polarity of the applied bias at the device Fig.4d). A coloured VIS image has been obtained by repeating the measurements three times with three different optical bandpass filters (450nm, 550nm and 650nm) resulting in three images with R, G, and B components, which have been combined to obtain the final VIS image.In conclusion, we have designed and fabricated a voltage-tunable dual-band photodetector operating in the VIS and SWIR range. The device is based on a couple of p-i-n photodiodes connected back-to-back formed within a Ge-on-Si epitaxial structure. The device architecture enables to electronically select the shorter (400-1100nm) or longer (1000-1600nm) wavelength range with a relatively low applied voltage. VIS-SWIR single-pixel imaging has been performed.[1] A.De Iacovo, et al., Journal of Lightwave Technology, 37(14), 3517(2019).[2] E.Talamas Simola, et al., Opt. Express 27, 8529-8539(2019). Figure 1

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Stability, metallicity, and magnetism in niobium silicide nanofilms

Modern superconducting qubits based on two-dimensional (2D) transmons typically involve the growth of Nb thin films on high-resistivity Si substrates. Since imperfections at the Nb-Si heterointerface have been implicated as a source of two-level systems that limit quantum coherence times, detailed characterization and understanding of niobium silicide interfacial layers are critical to improving superconducting qubit technology. While bulk binary intermetallic niobium silicide phases are well understood, the thermodynamic phase stability and properties of ultrathin niobium silicides, such as those found at the Nb-Si heterointerface in 2D transmons, have not yet been explored. Here, we report finite-sized effects for ultrathin niobium silicide films using density functional theory calculations and predict nanoscale stabilization of ${\mathrm{Nb}}_{6}{\mathrm{Si}}_{5}$ over the bulk $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{Nb}}_{5}{\mathrm{Si}}_{3}$ phase. This result is consistent with our experimental observations of a niobium silicide interfacial layer between a sputtered Nb thin film and the underlying Si substrate. Furthermore, our calculations show that ${\mathrm{Nb}}_{6}{\mathrm{Si}}_{5}$ nanofilms are nonmagnetic, making them superior to nanofilms of $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{Nb}}_{5}{\mathrm{Si}}_{3}$ that exhibit antiferromagnetic correlations detrimental to long coherence times in superconducting qubits. By providing atomic-scale insight into niobium silicide nanofilms, this paper can help guide ongoing efforts to optimize Nb-Si heterointerfaces for long coherence times in superconducting qubits.

Investigating Substrate Loss in MEMS Acoustic Resonators and On-Chip Inductors.

This work studies the influence of substrate loss on the performance of acoustic resonators and on-chip inductors and investigates the effective substrate resistivity of seven commonly used substrates in silicon-based devices. The substrates include X-cut lithium niobate (LiNbO3) film with two different thicknesses (400 nm and 1.6 [Formula: see text]) on high-resistivity Si (HR-Si) and amorphous Si wafers, SiO2 film with two different thicknesses on HR-Si, and bare HR-Si. The effective resistivities of these substrates are extracted using coplanar waveguides (CPWs) over a frequency range from 1 to 40 GHz. Using the effective resistivity approach, the efficiency of two substrate loss reduction techniques-Si wafer removal and amorphous Si-in reducing substrate loss is quantified. Comparison of the extracted substrate resistivities of the suspended and un-suspended dielectric-on-Si structures and comparison of LiNbO3 on HR-Si and amorphous Si are carried out. Substrate loss reduction techniques are more advantageous for a thinner dielectric film and at a lower frequency range due to the higher filling factor of the electric field in the Si wafer. Finally, by comparison of the effective substrate resistivity of SiO2 film on an HR-Si with bare HR-Si, thick plasma-enhanced chemical vapor deposition (PECVD) SiO2 film is found to be a good insulation layer to reduce substrate loss.

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

Coplanar waveguides (CPWs) are fabricated by directly bonding 17 μm Al foils to Si substrates with different resistivities and wet etching. Their RF characteristics are compared with those of CPWs fabricated on 0.8 μm thick evaporated Al layers. A lower insertion loss is observed for Si substrates with higher resistivity irrespective of the thickness of conductors because the substrate loss is decreased. For a 10000-Ω · cm Si substrate, Al-foil-based CPWs reveal a ∼0.7 dB cm−1 lower insertion loss in comparison with evaporated-Al-based CPWs at 1 GHz. These features agree with the calculation, which implies the superiority of direct bonding of metal foils for realizing low-loss passive components.

Ultrathin Ferrimagnetic GdFeCo Films with Low Damping

AbstractFerromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet‐like spin‐orbit‐torque behavior. However, to use ferrimagnets in spintronic devices their advantageous properties must be retained also in ultrathin films (t &lt; 10 nm). In this study, ferrimagnetic Gdx(Fe87.5Co12.5)1−x thin films in the thickness range t = 2–20 nm are grown on high resistance Si(100) substrates and studied using broadband ferromagnetic resonance measurements at room temperature. By tuning their stoichiometry, a nearly compensated behavior is observed in 2 nm Gdx(Fe87.5Co12.5)1−x ultrathin films for the first time, with an effective magnetization of = 0.02 T and a low effective Gilbert damping constant of α = 0.0078, comparable to the lowest values reported so far in 30 nm films. These results show great promise for the development of ultrafast and energy efficient ferrimagnetic spintronic devices.

Low RF loss and low dislocation density of GaN grown on high-resistivity Si substrates

The conductive channel induced by aluminum (Al) diffusion into high-resistivity Si substrates is one of the main contributors to RF loss of GaN-on-Si RF devices. However, it has been unclear how and when the Al diffuses into the substrates. Here, we study the origins of the Al impurity in the substrates. It’s revealed that trimethylaluminum (TMAl) flow rate during the pretreatment is a considerable contributor to the Al diffusion. By restricting the TMAl preflow rate, high-quality GaN layers with RF loss of 0.3 dB mm−1 at 10 GHz and dislocation density of 1.6 × 109 cm−2 have been achieved on Si substrates.

Computational Analysis of a 200 GHz Phased Array Using Lens-Coupled Annular-Slot Antennas

We report the design, simulation, and analysis of a THz phased array, using lens-coupled annular-slot antennas (ASAs) for potential beyond 5G or 6G wireless communications. For a prototype demonstration, the ASA employed was designed on a high resistivity Si substrate with a radius of 106 μm, and a gap width of 6 um for operation at 200 GHz. In order to achieve higher antenna gain and efficiency, an extended hemispherical silicon lens was also used. To investigate the effect of the silicon lens on the ASA phased array, a 1 × 3 array and 1 × 5 array (the element distance is 0.55λ) were implemented with a silicon lens using different extension lengths. The simulation shows that for a 1 × 3 array, a ±17° scanning angle with an about −10 dB sidelobe level and 11.82 dB gain improvement (compared to the array without lens) can be achieved using a lens radius of 5000 μm and an extension length of 1000 μm. A larger scanning angle of ±31° can also be realized by a 1 × 5 array (using a shorter extension length of 250 μm). The approach of designing a 200 GHz lens-coupled phased array reported here is informative and valuable for the future development of wireless communication technologies.

Terahertz-field-induced second optical harmonic generation from Si(111) surface

We study, both experimentally and theoretically, the second-harmonic (SH) generation (SHG) of optical radiation assisted by intense terahertz electromagnetic pulses from the surface of high-resistivity Si(111). The study was performed within the framework of the analysis of the superposition of different SH sources, including the surface-dipole, bulk-quadruple, and electric-field-induced (EFI) bulk-dipole (arising from internal built-in and external terahertz fields) contributions. Azimuthal rotation anisotropy of SHG for an arbitrary mutual polarization of the terahertz, fundamental, and SH optical fields was calculated and experimentally verified. The strongest impact of the terahertz field on SHG was observed in the case where the polarizations of the terahertz and SH fields coincide. In these polarization configurations, the terahertz field added mainly an isotropic term to the SH azimuthal dependences. It has been demonstrated that the application of the terahertz field can be helpful for distinguishing the SHG mechanism. For the sample under study, the contribution to the SH energy from the built-in field-induced source was found to be &gt;4 times greater than the contribution from the surface and quadrupole nonlinear sources. The dominance of the EFISHG allowed us to find the ratio between the components of a silicon third-order nonlinear tensor ${\ensuremath{\chi}}_{}^{(3)}(2\ensuremath{\omega};\ensuremath{\omega},\ensuremath{\omega},0)$: ${\ensuremath{\chi}}_{1122}={\ensuremath{\chi}}_{1212}\ensuremath{\approx}0.51{\ensuremath{\chi}}_{1111}$ and ${\ensuremath{\chi}}_{1212}\ensuremath{\approx}{\ensuremath{\chi}}_{1221}$ for the fundamental optical wavelength 790 nm.

Distribution of charge carrier concentrations in epitaxial Ge and GeSn layers grown on n-=SUP=-+-=/SUP=--Si(001) substrates

Heteroepitaxial Ge or Ge1-xSnx layers were grown by hot-wire chemical vapor deposition on Si(001) substrates doped heavily with a donor (As or Sb) impurity. The same layers were also grown on high-resistance Si(001) substrates for comparison. The depth profiles of carrier concentration were measured in both types of layers using the capacitance-voltage method, and carrier mobilities were measured additionally by the Hall effect method in layers on high-resistance silicon. It was found that the layers grown on high-resistance substrates were p-type, while the layers grown in the same regimes on heavily doped substrates were n-type with electron concentration n=(4-9)·1016 cm-3 in Ge layers and n=(2-4)·1017 cm-3 in GeSn layers. It was established experimentally and theoretically that the effect of autodoping of Ge and GeSn layers is lacking in the hot-wire chemical vapor deposition method. In our view, the growth of n-type Ge and GeSn layers on n+-Si(001) substrates doped heavily with a donor (As or Sb) impurity is associated with the segregation of this impurity in the process of growth of a buffer Si layer and its subsequent incorporation into growing Ge or GeSn layers. Keywords: epitaxy, doping, Ge, Si, Sn, concentration.

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

This paper proposes high sensitivity temperature sensors based on single port surface acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and GaN/Sapphire, which permit wide range, accurate temperature determinations. In contrast with GaN/Si SAW based temperature sensors, SiC and Sapphire substrates enable the proper functionality of these devices up to 500°C (773 K), as the high resistivity Si substrate becomes conductive at temperatures exceeding 250°C (523 K) due to the relative low bandgap (and high intrinsic carrier concentrations). Low temperature measurements were carried out using a cryostat between -266°C (7 K) and room temperature (RT) while the high temperature measurements are made on a modified RF probe station. A polynomial fit was used below RT and a linear approximation was evidenced between RT and 500°C (773 K). The structures were simulated at different selected temperatures based on a method that couples Finite Element Method (FEM) and Coupling of Modes (COM). The measured temperature coefficient of frequency (TCF) is about 46 ppm/°C for GaN/SiC SAWs and reaches values of 96 ppm/°C for GaN/Sapphire SAW in the temperature range 25 – 500°C (298 K – 773 K).

Effects of substrate phonon absorption on the resonance behavior of metal–insulator–metal metamaterial terahertz absorbers

We have investigated the effects of substrate phonon absorption on the resonance behavior of metal–insulator–metal (MIM) double-layer metamaterial absorbers (MMAs) in the terahertz (THz) frequency range. A sharp resonant absorption dip is clearly observed for a metamaterial-on-ground-plane (MMOGP) structure fabricated on a semi-insulating (SI) GaAs substrate when THz radiation is incident from the surface metamaterials (MMs) side. However, when the THz is incident from the substrate side to the ground-plane-on-metamaterial (GPOMM) structures fabricated on a SI GaAs substrate, we find that the resonance dip is almost merged into the broad background of acoustic phonon absorption. The resonant absorption is recovered when the GaAs substrate is replaced with a high-resistivity Si substrate. These findings demonstrate that the choice of substrates is very important to suppress the absorption by acoustic phonons absorption in the THz range and achieve high-quality factor resonance.