High Power Semiconductor Laser Arrays Research Articles

High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper. The 6-μm-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M 2 of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

Thermal management of a semiconductor laser array based on a graphite heat sink.

Thermal analysis of a semiconductor laser array is carried out by establishing a packaging structure model of the array based on the use of copper as the base heat sink. A novel composite heat sink structure for a high-power semiconductor laser array with copper-implanted graphite microholes is proposed. The relationship between the location and quantity of microholes and the junction temperature of the semiconductor laser array is analyzed by numerical simulation. The packaging structure is found to effectively reduce the temperature generated by the semiconductor laser array in the process of operation, and the highest temperature is reduced by 4.52K. Since the laser diode bar is composed of multiple emitters, the temperature of the intermediate emitters is higher than that of the edge emitters. The structure of the graphite heat sink is optimized to improve the temperature uniformity of the semiconductor laser array emitter. Without changing the parameters of the semiconductor laser array device, the temperature difference is calculated, and a reduction from 7.68 to 2K is shown.

封装对大功率半导体激光器阵列热应力及Smile的影响

封装对大功率半导体激光器阵列热应力及Smile的影响

传导冷却单巴高功率半导体激光器热应力和smile研究

传导冷却单巴高功率半导体激光器热应力和smile研究

Novel micro-channel cooler for high-power diode laser arrays

The construction of novel micro-channel cooler that allows for high packaging density of laser diode arrays is presented. Its main element is the micro-channel copper plate with micro-pipes that transport cooling liquid in the vicinity of diode laser array. The prototype series of the coolers was manufactured and tested. The experimental arrangements for investigations of thermal properties and micro-photoluminescence measurements of the devices were built. Experimental results indicate that the proposed cooler is interesting solution for high-power diode laser arrays. Full Text: PDF References V.K. Krause et al., "Microchannel coolers for high-power laser diodes in copper technology", Proc. SPIE 2148, 351 (1994). CrossRef Y. Karni, G. Klumel, M. Levy, Y. Berk, Y. Openhaim, Y. Gridish et al., "Active cooling solutions for high power laser diodes stacks", Proc. SPIE 6876, 687604-1 (2008). CrossRef J. Vetrovec, "Improved cooling for high-power laser diodes", Proc. SPIE 6876, 687603-1 (2008). CrossRef R. Feeler, "Next-generation microchannel coolers", Proc SPIE 6876, 687608-1-8 (2008). CrossRef J. Dix, A. Jokar, R. Martinsen, "Enhanced microchannel cooling for high-power semiconductor diode lasers", Proc. SPIE 6876, 687606-1-10 (2008). CrossRef J. Wang et al., "High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology", Proc. SPIE 8241, 82410H-1-9 (2012). CrossRef Z. Liu, G. Fang, K. Feng, "High packing density laser diode stack arrays using Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks", Chin. Opt. Lett. 7, 214 (2009). CrossRef J.W. Tomm, J. Jimenez, Eds, Quantum-well laser array packaging (New York, McGraw-Hill 2007). M. Leers, K. Boucke, Proc. IEEE Electr. Comp. Techn. Conf. 1011 (2008). A. Maląg, A. Jasik, M. Teodorczyk, A. Jagoda, A. Kozłowska, "High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes", IEEE Photon. Tech. Lett. 18, 1582 (2006). CrossRef

大功率半导体激光器阵列光谱展宽机理研究

大功率半导体激光器阵列光谱展宽机理研究

Solder with discontinuous melting point in semiconductor laser arrays and stacks

High power semiconductor laser arrays must be mounted in the epitaxy-side down configuration for good heat transfer and so require a well-controlled solder. Selection of solder is very important in semiconductor laser arrays and stacks. Usually, the solder consists of two layers. The outer layer prevents In from oxidation. A new type of solder with several layers of Au between the two layers of In was made, which constitutes of multi-layer of W/Ni/Au/In/Cu. In packaging, the Au layer in the solder does not melt. Quick temperature decrease can avoid expansion of the solder. The solder cannot oxidize during packaging.

Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM)

New results of steady-state two-dimensional finite-element computations of temperature distributions of high power semiconductor laser arrays are presented. The influence of different thermal loads on the 2D temperature distribution in AlGaAs/GaAs gain-guided laser arrays is investigated. TheFEM model is tested by comparing it with analytical solutions. For numerical convenience, the latter is rewritten in a novel form, which is free of overflow problems. The maximum temperatures calculated by both methods agree within 1%. Several factors determining the thermal resistance of the device are quantitatively examined: the ratio of light emitting to non-emitting areas along the active zone, the amount of Joule losses, the current spreading, the solder thickness, and voids in the solder. This yields design rules for optimum thermal performance.

Coherent optical communication with injection-locked high-power semiconductor laser array

Heterodyne FSK communication at 110Mbit/s is demonstrated with an injection-locked high-power 20-stripe semiconductor laser array. We show that a high-power (>300mW) coherent optical transmitter can be constructed without penalty in bit error rate performance.

Analysis of a Y-junction semiconductor laser array

An analysis of a new type of high power semiconductor laser array is presented. The array consists of parallel, uncoupled waveguides linked at Y junctions in one region. We show that for the lowest threshold array mode all the waveguides oscillate in phase and all (except possibly the outermost) have equal amplitudes. The array mode should be stable above threshold and it radiates in a single-lobe far-field pattern if the individual waveguide mode width is comparable to the guide separation.

Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

We describe the fabrication of closely spaced arrays of buried heterostructure semiconductor lasers by the process of silicon impurity induced disordering. These devices have the low threshold currents which are associated with buried heterostructure lasers, as well as high overall device efficiency. The device we have analyzed for this letter exhibits a threshold current of 53 mA, differential quantum efficiency of 62%, and a total power conversion efficiency of 43% when operating at a power output level of 250 mW. These numbers indicate that this technology is quite promising for the fabrication of high power semiconductor laser arrays.

Correction to "Heatsink requirements for coherent operation of high-power semiconductor laser arrays"

Correction to "Heatsink requirements for coherent operation of high-power semiconductor laser arrays"

Heatsink requirements for coherent operation of high-power semiconductor laser arrays

The heatsink requirements for coherent operation of laser diode arrays are examined by thermal analysis of specific heatsinks and the phase locking of laser diodes. It is shown that mounting laser diode arrays at the edge of semi-infinite copper heatsinks results in temperature variations between individual laser diode elements that are too large to permit coherent operation except at relatively low-power levels. It is also shown that by the use of diamond and/or shaped heatsinks it is possible to operate large arrays coherently to high optical output levels.