High Photoresponsivity Research Articles

Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carriers trapping with deep centers

Abstract The materials system of ultra-wide bandgap Ga2O3 has already shown great promise in the field of solar-blind photodetectors with high photoresponsivity, high photoresponsivity gain and low dark current. These promising results have been achieved on Ga2O3 films of different polymorphs and by different methods, often not with particularly high crystalline quality. In fact, it would often seem the case that the lower the crystalline quality of the films, the higher the photosensitivity and its gain. This, however, is in most cases accompanied by unusually long photocurrent build-up and decay times. We show that the experimental results can be explained by models in which the high photosensitivity gain is related to the effects of holes being trapped by deep states that, in Schottky diodes, results in the decrease of the Schottky barrier height with consequent increase of electron current, and in Metal-Semiconductor-Metal (MSM) structures additionally gives rise to the usual gain increase due to the increased concentration and lifetime of electrons. We present and discuss the models describing the effects in Ga2O3 Schottky diodes, MSM structures, unipolar and bipolar heterojunctions and propose possible candidates for the role of the hole traps in different Ga2O3 polymorphs. We also discuss the existing results for the photocurrent build-up and decay times and offer possible explainations of the observed temperature dependences of the characteristic times where such data are present.

Core-shell nanorods film of p-CuZnS/n-TiO2 with boosting interfacial charge separation for sensitive photoelectrochemical photodetector

Copper zinc sulphide (CZS) due to high conductivity, fast photoresponse and good stability has attracted rising attention in optoelectronic field. Constructing heterojunctions with rational energy bands alignment can accelerate carrier separation to improve the performance of CZS-based photoelectric device. Herein, p-CZS/n-TiO2 core-shell nanorods heterojunction film was successfully fabricated for the first time. CZS nanoparticles (NPs) were directly loaded on the surface of TiO2 nanorods (NRs) through a simple chemical bath deposition. Photoelectrochemical (PEC) photodetector based on CZS/TiO2 composite film was designed and interfacial charge kinetics has also been investigated. The CZS/TiO2 PEC device exhibits fast response speed of 95/56 ms, high responsivity of 7.1 mA W-1 and detectivity of 5.6 × 1012 Jones at a bias voltage of 1 V. The light on/off ratio of self-powered CZS/TiO2 PEC device achieves 5.6 × 103, nearly 30.4 times higher than bare CZS PEC device. Furthermore, the photodetection performance of the CZS/TiO2 PEC device can be effectively regulated by light power density and environment conditions, promoting its adaptability in multifarious practical applications. The findings suggest that CZS/TiO2 heterostructure film devices have great potential for high-performance and energy-efficient PEC photodetectors.

Enhanced Photodetection Performance of InBiSe3/ReS2 Polarization-Sensitive Heterostructure Photodetectors.

Individual anisotropic two-dimensional (2D) materials have been widely applied for developing polarization-sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization-sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe3 and anisotropic ReS2 nanoflakes. The InBiSe3/ReS2 vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R)of 7.68 AW-1 and a specific detectivity (D*)up to 1.26×1011 Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe3 crystals together with the pronounced anisotropic electronic and optical characteristics of ReS2 flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe3/ReS2 vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.

High-Performance Ultra-Broadband Photodetector Based on Fe3O4/CrSiTe3 Heterostructures.

Photodetectors based on advanced materials with a broad spectral photoresponse, high sensitivity, huge integration ability, room-temperature operation, and stable environmental stability are highly desired for diversified applications of imaging, sensing, and communication. Herein, a high-performance ultra-broadband photodetector based on an ultrathin two-dimensional (2D) Fe3O4 nanoflake heterostructure with high sensitivity was designed. The photodetector response light was from visible 405 nm to long-wave infrared (LWIR) 10.6 μm in ambient air. The competitive performances, including a high photoresponsivity (R) of 182.8 A W-1, fast speed with the rise time τr = 8.8 μs, and decay time τd = 4.1 μs, were demonstrated in the visible range. Notably, the device exhibits an excellent uncooled LWIR detection ability, with a high R of 1.4 A W-1 realized at a 1.5 V bias. In the full spectral range, the noise equivalent power is lower than 0.79 pW Hz-1/2, and specific detectivity (D*) is higher than 4.9 × 108 cm Hz1/2 W-1 in ambient air. This work provides alternative ultrathin 2D materials for future infrared optoelectronic devices.

Synthesis of highly transparent and fast-responding photochromic coating by template method with space-limited domains

The persistent global high-temperature weather warns us that improving energy efficiency and reducing CO2 emissions are urgent. Controlling the solar energy input in buildings using photochromic smart coating can effectively reduce the energy consumption required for cooling. However, it remains a challenge to achieve high transparency and fast photoresponse in organic–inorganic hybrid photochromic smart coating. Herein, we utilize space-limited domains to design a template polymer that facilitates the formation of amorphous WO3 nanodots, thereby enhancing the polymer network structure through hydrogen bonding and dipole–dipole interactions, which endow the smart coating with excellent adhesion strength up to 13 MPa. Notably, the photochromic smart coating with amorphous WO3 nanodots exhibits higher transparency (96.8 %) than conventional glass (91 %), and a wide visible light modulation range of 96.8 %-4.8 %. Based on this, the cooling efficacy of the smart photochromic coating was assessed within a model residence under actual environmental conditions. The inner temperature of the model house was reduced by up to 13 °C, which decreased indoor heat absorption by 25.8 %, significantly improving energy efficiency. This work provides an important and attractive strategy for achieving energy-efficient building materials and addressing global climate warming.

Highly Polarization‐Sensitive Solar‐Blind Ultraviolet Photodetection Based on 1D Rb2CuCl3 Microwires

AbstractPolarization‐sensitive solar‐blind ultraviolet (UV) photodetectors are essential in both civilian and military applications. 1D perovskites derivative Rb2CuCl3 holds promise for polarization‐sensitive solar‐blind UV photodetectors due to its wide direct bandgap, anisotropic crystal structure, and long carrier lifetime. However, no studies on the polarization properties of Rb2CuCl3 are reported. Here, the electronic structural anisotropy of Rb2CuCl3 is confirmed by calculating the partial charge density distribution in the ac‐plane and bc‐plane. Then, the Raman‐active modes and corresponding atomic vibration modes are explored within the bc‐plane through joint experimental and theoretical Raman spectroscopy. Besides, angle‐resolved Raman, photoluminescence, and absorption spectroscopy reveal the intriguing anisotropic photoelectric characteristics of Rb2CuCl3 microwires (MWs). By using single Rb2CuCl3 MW as the photoactive layer, a polarization‐sensitive solar‐blind UV photodetector is fabricated, showing high photoresponsivity of 78 mA W−1 and photocurrent anisotropy ratio of ≈1.7 at 265 nm. Importantly, the proposed photodetectors without encapsulation exhibit excellent stability in ambient air, retaining the original photocurrent after two months, showcasing practical applicability. This study underscores the promise of Rb2CuCl3 for high‐performance polarization‐sensitive solar‐blind UV photodetectors, contributing valuable insights into its electronic structure, photoelectric properties, and practical applicability.

Ultrabroadband Photodetection with MoS2 and Gold Nanorod Using Gap-Mode Plasmon Effect.

Plasmon resonance using metal nanostructures enables the realization of high-performance optoelectronic devices via field enhancements in the vicinity of the metal nanostructure. This study proposes an ultrabroadband MoS2 photodetector based on the gap-mode plasmon of gold nanorods. The use of MoS2 as a gap spacer for the gap-mode plasmon effect and as a channel material for the photodetector is demonstrated. The proposed photodetector demonstrates superior performance, a high photoresponsivity of 2.8 A/W at a near-infrared wavelength of 1100 nm, and a fast response time of 17 μs. In addition to the gap-mode plasmon effect of the gold nanorod enhancing the photoresponsivity from 1.13 to 8.7 A/W, the lateral surface plasmon resonance of the gold nanorods enhances the absorption of the longitudinal mode of the gold nanorods (near-infrared to infrared range). Further, the gap-mode plasmon effect of the gold nanorods enhances the absorption of the transverse mode of the gold nanorods (visible range), thus realizing ultrabroadband photodetection. Therefore, the proposed device design strategy contributes significantly to overcoming the trade-off between photoresponsivity and response time.

A high-performance selenium nanoflake-based avalanche photodetector

Photodetectors are now indispensable in our daily lives, and there is a pressing need to explore new materials and mechanisms that can push the boundaries of device performance. Two-dimensional (2D) van der Waals (vdW) semiconductors have emerged recently as a promising material platform with exceptional optoelectronic properties, making them particularly suitable for high-performance photodetectors. However, photoinduced carrier generation in conventional 2D vdW photodetectors are usually limited, and new mechanisms need to be introduced to enhance device performance. Herein, we report a high-performance avalanche photodetector based on selenium (Se) nanoflakes. Our device achieves a high photoresponsivity (R) and specific detectivity (D*) of 361 A·W−1 and 2.4 × 1012 Jones, respectively. These figures of merit are two orders of magnitude higher than that in conventional Se photoconductive photodetectors. As a large bandgap vdW semiconductor, the Se channel allows the application of an extremely large bias voltage across it, and the resulting high electric field leads to the avalanche multiplication of carriers, which lays the groundwork for the improved device performance.

Van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors.

Two-dimensional van der Waals heterojunctions represent a promising avenue for a spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency of the photocurrent generated. In this article, a ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized to confirm that this heterojunction possesses thermal stability with a direct bandgap (1.36 eV). It exhibits a high light absorption coefficient and high carrier mobility (2.51 × 103 cm2 V-1 s-1), and biaxial strain has a significant effect on the modulation of the band structure. As the tensile strain increases, the bandgap changes nonlinearly, transitioning from a type-II to a type-I heterojunction. When compressive strain increases, the bandgap decreases. Quantum transport simulations are employed to calculate the density of states and transmission spectrum of the ZnO/HfSn2N4 model, verifying its excellent photoresponse (a photocurrent peak reaching 4.93 a02/photon and an extinction ratio peak of 75.1). It shows that the ZnO/HfSn2N4 heterojunction is a potentially efficient photodetector.

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector.

The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date is largely limited to the lack of effective and controllable growth strategies, prone to the unpredictable stacking orders and randomly distributed nucleation sites. Here, we devise an optimized chemical vapor deposition approach for modulating the MoS2 single crystals from monolayer to multilayer with diverse stacking configurations. Significantly, the phototransistor based on monolayer MoS2 single crystal exhibits an ultrasensitive performance with a high photoresponsivity (R) of 3.3 × 104 A W-1 and a remarkable detectivity (D*) of above 1.7 × 1014 Jones at 405 nm light illumination. Ultralow-frequency and angle-resolved polarized Raman spectroscopy is used to systematically uncover the delicate interlayer interactions and crystallographic anisotropy. Moreover, the polarization-sensitive photodetectors using 1-3L MoS2 show a layer number-dependent anisotropic performance, with dichroism ratios of 1.36, 1.44, and 1.52. This work offers a promising method to not only enable the fabrication of new customized layer-, stacking-, and twist-2D materials but also provides the foundation for the development of advanced polarization-sensitive and optoelectronic devices based on stacking transitions.

Solution-processed, ultrasensitive, high current density vertical phototransistor using porous carbon nanotube electrode

Multi-wall carbon nanotube (MWCNT) thin film has been identified as the ideal electrode material due to their inherent electronic and optoelectronic properties. We have successfully fabricated a vertical field-effect phototransistor (vFEpT) using MWCNT as a porous source electrode. The optimized MWCNT electrodes showed an electrical conductivity of 3.92 × 103 S/m and a sheet resistance of about 490 Ω/□, with a layer thickness of about 520 nm. The as-fabricated transistor has p-type conductivity because of the unintentional doping of the PbS layer and the intrinsic hole transport property of the MWCNT network. Additionally, the device shows excellent photoelectric performance at 30 mWcm−2 of illumination, with a high current density of 2.3 × 10−3 Acm−2. With a high conductivity network for carrier transfer and separation, the special characteristics of MWCNT nanoporous thin film enable improved photoelectric properties, such as a high photoresponsivity of 3.16 AW−1 and a specific detectivity of 2.33 × 1012 Jones when illuminated at 808 nm light irradiance with an intensity of 0.6 µW/cm2. Furthermore, the device demonstrated a steady dynamic response to an optical signal, with rising and falling times of 31.8 ms and 32.9 ms, respectively. This work presents a new method for creating high-performance vertical phototransistors with MWCNT as the source electrode.

Highly Photoresponsive Vertically Stacked Silicon Nanowire Photodetector with Biphasic Current Stimulator IC for Retinal Prostheses

This paper presents an integrated approach for a retinal prosthesis that overcomes the scalability challenges and limitations of conventional systems that use external cameras. Silicon nanowires (SiNWs) are utilized as photonic sensors due to their nanoscale dimensions and high surface-to-volume ratio. To enhance these properties and achieve high photoresponsivity, our research team developed a vertically stacked SiNW structure using a fabrication method entirely based on dry etching. The fabricated SiNW photodetector demonstrated excellent electrical and optical characteristics, including linear I–V characteristics that confirmed ohmic contact formation and high photoresponsivity exceeding 105 A/W across the 400–800 nm wavelength range. The SiNW photodetector, following its integration with a switched capacitor stimulator circuit, exhibited a proportional increase in stimulation current in response to higher light intensity and increased SiNW density. In vitro experiments confirmed the efficacy of the integrated system in inducing neural responses from retinal cells, as indicated by an increased number of neural spikes observed at higher light intensities and SiNW densities. This study contributes to sensor technology by demonstrating an approach to integrating nanostructures and electronic components, which enhances control and functionality.

Inspection and comparative analysis of light and thermal response dynamics of Cu/V₂O₅/n-Si and Cu/La-V₂O₅/n-Si MIS diodes

Schottky Barrier Diodes (SBDs) are pivotal in modern electronics for their quick switching and low forward voltage drop, enabled by metal-semiconductor junctions. SBDs are renowned for their performance, primarily due to their metal-semiconductor intersection. This study focuses on Cu/V2O5/n-Si and Cu/La-V2O5/n-Si SBDs, examining the impact of lanthanum doping on their performance. Transition Metal Oxides (TMOs) like Vanadium Pentoxide (V2O5) offer unique electronic, magnetic and optical properties making them suitable for various applications. The fabrication process involved sol-gel spin coating and DC magnetron sputtering to create a thin V2O5 layer on n-type silicon wafers, followed by copper contact deposition. Galvanizing temperatures ranged 300° C to 500° C to study the structural, optical, and morphological changes in V2O5 thin films. Key findings include the significant reduction in ideality factor (n) with increasing annealing temperatures for Cu/V2O5/n-Si SBDs, reaching as low n value of 5.26 at 500°C, indicating improved device performances. For Cu/La-V2O5/n-Si SBDs, the ideality factor consistently decreased with higher light intensities, showcasing enhanced performance due to La doping. Barrier height (ɸB) also varied, with higher values observed for La-doped V2O5, enhancing charge recombination and increasing oxygen vacancies. Photodiode parameters were significantly enhanced by doping of the La. The Cu/La-V2O5/n-Si SBDs demonstrated high photosensitivity (PS = 3327.5 %), photo responsivity (R = 33.39 mA/W) and detectivity (D* = 9.82 × 10¹⁰ Jones), making them highly efficient for optoelectronic applications. Overall, this study highlights the potential of Cu/La-V2O5/n-Si SBDs for high-efficiency, optoelectronic applications, with optimized doping concentrations and annealing conditions significantly improving their performance.

Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at ±1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm2, and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 × 10−2 A, 2.49 A/W, 2.02 × 105, 5.8 × 109 Jones and 2.06 × 103, respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.

Formation of High-Photoresponsivity BaSi2 Films by Radio-Frequency Sputtering and Evaluation of a BaSi2/TiN/Glass Heterojunction by Transmission Electron Microscopy.

Barium disilicide (BaSi2) is a thin-film solar cell material composed of abundant elements, and its application potential is further enhanced by its formation on inexpensive substrates, such as glass. The effect of the substrate temperature on the co-sputtering of BaSi2 and Ba targets to form BaSi2 films on Si(111) and TiN/glass substrates was investigated. Contrary to expectations, the photoresponsivity reached maximum values exceeding 5 and 2 A W-1, respectively, the highest value ever reported for as-deposited samples formed at 750 °C, more than 100 °C higher than those reported previously. Because the photoresponsivity is proportional to carrier lifetime, this result indicates that high-temperature growth can bring out the high performance of BaSi2 as a light-absorbing layer. Because amorphous SiC (a-SiC) has a larger forbidden band gap and electron affinity than BaSi2, it is considered suitable as an electron transport layer (ETL) material for BaSi2 solar cells. On the basis of this, the formation of BaSi2 (absorption layer)/a-SiC (ETL)/TiN (electrode)/glass heterojunctions was also attempted, and the layered structure was examined by cross-sectional transmission electron microscopy (TEM). Polycrystalline BaSi2 films were found to be even on the amorphous layer by TEM. A high photoresponsivity of over 2 A W-1 was obtained. Therefore, the BaSi2/a-SiC/TiN structure provides a guideline for the structural design of BaSi2-based thin-film solar cells on glass.

Vertically Stacked Broadband GNIF‐MoS2/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response

AbstractThe proposed model structure, featuring a gold (Au) nano‐island film (GNIF) integrated with a vertically stacked van der Waals heterojunction and offering an elegant platform for high‐performance, efficient, and sensitive photodetection across a broad spectral range, is designated as GNIF‐MoS₂/p‐Ge(MoS2 = Molybdenum disulfide, p‐Ge = p type germanium). The GNIF is fabricated via ultrathin film deposition, based on the surface dewetting properties of MoS2. The as‐fabricated photodetector (PD), offering ≈20 times reduction in dark current and characterized by wavelength‐dependent high responsivity (R(λ)), photoconductive gain (G(λ)), and detectivity (D(λ)), respond to a broad spectral range from visible light (400 nm) to short wave infrared (SWIR) (1600 nm). The ultrahigh transient response (τr) is found to be ≈2.5 and 16 µs for the 470 (visible light) and 1550 (SWIR) nm wavelengths, respectively, resulting in 3‐dB bandwidths of up to ≈48 kHz, which is considered high for such devices. To understand the inherent mechanisms of broadband detection and the high photoresponse and ultrafast transient response of PDs, a meticulous investigation is conducted on the wavelength‐dependent behaviors, depletion width changes, and material properties. The results provide valuable insights and a basis for the construction of suitable PDs based on nanometer‐thin metal films, 2D semiconductors, and a 3D hybrid structure.

Lead-free Cs3Bi2I9 perovskite hexagonal microplates: A promising material solution-processed for ultraviolet self-powered photodetectors

In recent times, hybrid organic-inorganic lead halide perovskites have garnered significant attention in the realm of optoelectronic devices. Metal halide perovskites are extensively researched for photodetection due to their exceptional optical and electrical properties. However, the toxicity of lead and the unstable nature of organic components are limiting its potential. Lead-free perovskites, on the other hand, have low toxicity and are being explored as a promising material for photodetector applications. However, achieving self-powered perovskite photodetectors with high photoresponse, broad spectral sensitivity, and long-term stability remains challenging Among them, Cs3Bi2I9 perovskites have emerged as standout, garnering attention for their environmentally friendly nature, impressive stability, and heightened photosensitivity. Herein, FTO/ Al-doped ZnO (AZO)/Cs3Bi2I9/P3HT/C self-powered ultra-violet (UV) photodetector. This device demonstrated outstanding self-powered photodetection capabilities with a photoresponsivity of 29 mA/W, a specific detectivity of 1.05×1011 Jones, and an impressive response rise and decay time of 90 ms /140 ms. Furthermore, the PDs device can function as a bias-based UV photodetector.

Ultrathin, High-Aspect-Ratio Bismuth Sulfohalide Nanowire Bundles for Solution-Processed Flexible Photodetectors.

In this study, a novel synthesis of ultrathin, highly uniform colloidal bismuth sulfohalide (BiSX where X = Cl, Br, I) nanowires (NWs) and NW bundles (NBs) for room-temperature and solution-processed flexible photodetectors are presented. High-aspect-ratio bismuth sulfobromide (BiSBr) NWs are synthesized via a heat-up method using bismuth bromide and elemental S as precursors and 1-dodecanethiol as a solvent. Bundling of the BiSBr NWs occurs upon the addition of 1-octadecene as a co-solvent. The morphologies of the BiSBr NBs are easily tailored from sheaf-like structures to spherulite nanostructures by changing the solvent ratio. The optical bandgaps are modulated from 1.91 (BiSCl) and 1.88eV (BiSBr) to 1.53eV (BiSI) by changing the halide compositions. The optical bandgap of the ultrathin BiSBr NWs and NBs exhibits blueshift, whose origin is investigated through density functional theory-based first-principles calculations. Visible-light photodetectors are fabricated using BiSBr NWs and NBs via solution-based deposition followed by solid-state ligand exchanges. High photo-responsivities and external quantum efficiencies (EQE) are obtained for BiSBr NW and NB films even under strain, which offer a unique opportunity for the application of the novel BiSX NWs and NBs in flexible and environmentally friendly optoelectronic devices.

A comparative study of broadband PbS quantum dots/graphene photodetectors with monolayer and bilayer graphene

Colloidal quantum dots (QDs)/graphene nanohybrids provide a unique platform to design photodetectors of high performance. These photodetectors are quantum sensors due to the strong quantum confinement in QDs for spectral tunability, and in graphene for high charge mobility. Quantitatively, the high carrier mobility of graphene plays a critical role to enable high photoconductive gain and understanding its impact on the photodetector performance is imperative. Herein, we report a comparative study of PbS QDs/graphene nanohybrids with monolayer and bilayer graphene for broadband photodetection ranging from ultraviolet, visible, near-infrared to short-wave infrared spectra (wavelength: 400 nm–1750 nm) to determine if a specific advantage exists for one over the other. This study has revealed that both the monolayer and bilayer graphene grown in chemical vapor deposition can provide a highly efficient charge transfer channel for photo-generated carriers for high broadband photoresponse.

High Photoresponsivity and Fast Response Speed Ferroelectric Photomemristor for Artificial Visual System Application

AbstractFerroelectric photoelectric devices show promising applications in artificial vision systems. However, this type of devices used in artificial vision systems exhibits low photoresponsivity and this limited cyclability of photocurrents, which hinders the progress of artificial vision systems. In this study, an artificial vision system is constructed with high photoresponsivity, fast photoresponse speed, and high read/write speed based on the Pd/PbZr0.4Ti0.6O3/La0.3Sr0.7MnO3/LaAlO3 ferroelectric photomemristor. The high optical response (18.86 nanoamperes) and read/write speeds (50 nanoseconds) of the device significantly improve the robustness and speed of the neuromorphic visual system while reducing power consumption for recognition. The artificial vision system developed in this study provides excellent real‐time image processing capabilities, including edge detection and classification with 100% accuracy for musical key patterns, and it is expected to offer great potential for the development of high‐performance self‐powered artificial vision systems.