High-performance Visible Photodetector Research Articles

Facile synthesized Sb2S3 based high-performance visible photodetector for weak optical signal detection

This report is enlightening a novel approach to fabricating Sb2S3-based photodetector that can be used as an efficient receiver with the capability to detect weak optical signals in the visible light communication system. In place of several limitations posed by traditional wireless fidelity networks, this study also provides further evidence supporting the application of the new Light Fidelity technology. The solid-state reaction method was used to synthesize Sb2S3 material. A thin film of Sb2S3 was then deposited on a SiO2 substrate via thermal evaporation, and then MSM (metal semiconductor metal) type device was fabricated. The fabricated photodetector demonstrated excellent performance with a responsivity of 2635 mAW−1, detectivity of 1011 Jones order, and external quantum efficiency of 615%. This device is remarkable for its ability to detect optical signals with low power, with an estimated detection capability of up to 2.8 × 10−12 WHz−1/2 The device also boasts a faster response time, with a rise and decay time of approximately 130 ms. Additionally, it is highly durable and can withstand high voltages, making it an ideal device for visible light communication, even with weak optical signals.

Metal–semiconductor–metal visible photodetector based on Al-doped (Cd:Zn)S nano thin films by hydrothermal synthesis

High quality undoped and Al-doped nanocrystalline (Cd:Zn)S films [CZS and ACZS] were deposited on glass substrates by hydrothermal assisted chemical bath deposition. The Al concentration was varied from 0.5 mol.% to 2 mol.% in steps of 0.5 mol.% replacing cadmium while keeping other deposition parameters constant. XRD, SEM, and EDX were used to observe crystallinity, morphology and composition of the as prepared samples. X-ray diffraction revealed the hexagonal phase of CZS films with prominent orientation along the (002) plane. XPS analysis was used to confirm the doping concentration of Al in to CZS lattice. Repeatable photoresponse was recorded under 100 s cycle light-on and light-off conditions. 1 mol.% Al doped film being optimised as good photoconductor; a photodetector was fabricated with Ag/ACZS/Ag device structure. The ACZS photodetector exhibits similar time response, good photocurrent reproducibility and a sharp photoresponse at blue radiation with high photo-dark current ratio of 95. The device exhibits peak responsivity of 3.48 mA W−1 and detectivity of 1.26 × 1011 Jones at 470 nm. These properties suggest that the ACZS photodetector holds great potential for application in high-performance visible photodetectors, especially in the blue region.

Ultra-long high quality catalyst-free WO3 nanowires for fabricating high-performance visible photodetectors

This work presents a study on the controlled growth of WO3 nanowires via chemical vapor deposition without catalyst, and their potential applications in visible photodetectors. The influence of growth conditions on the morphology of WO3 nanowires is studied in order to understand the growth mechanism of WO3 nanowires, and ultra-long (60 , the longest one ever reported) WO3 nanowires with a spindle shape are achieved by optimizing the growth conditions. It was found that the length of WO3 nanowires increases from 15 to 60 with increasing the argon carrier gas flow rate from 30 sccm to 90 sccm, and then saturates with further increasing the argon carrier gas flow rate. However, the length of WO3 nanowires reduces from 60 to 19 with increasing the tube inner pressure from 2.5 Torr to 3.5 Torr. The photoconductor detectors based on WO3 single nanowires present excellent device performance with a responsivity as high as 19 A W−1 at a bias of 0.1 V, a detectivity as high as 1.06 × 1011 Jones, and a response (rising and decay) time as short as 8 ms under the illumination of a 404 nm laser. These results indicate the great potential of WO3 nanowires for applications in fabricating high performance visible photodetectors.

High performance visible light photodetector based on TlInSSe single crystal for optoelectronic devices

Owing to its high photosensitivity and excellent optoelectrical properties in the visible range, the TlInSSe single crystal is considered for use in high performance visible photodetectors. Herein, we report a detailed optoelectrical investigation of TlInSSe single crystal grown via the Bridgman technique. The photocurrent was observed to increase with an increase in the illumination intensity. The temperature-dependent photoconductivity under different illumination intensities was studied to understand the photogenerated charge transport mechanism in the TlInSSe crystal. A drop in activation energy was noticed from 0.278 eV (under dark conditions) to 0.114 eV (under illumination), attributed to the filling of trap states by photogenerated carriers. The photo-switching behavior was studied and the growth and decay times were found to be ∼310 and 300 ms, respectively. The photodetector device of the grown crystal was fabricated and the important figure of merit was determined for 532 nm laser light. The photodetector exhibits a responsitivity up to 0.61 A W−1, a detectivity up to 6.24 × 1011 Jones, and an external quantum efficiency up to 120%. These parameters decrease with an increase in the illumination intensity, but increase with applied voltage. These excellent optoelectrical properties make TlInSSe single crystal a highly competitive candidate for visible photodetector devices.

High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates

Two-dimensional (2D) nanostructures, bismuth telluride (Bi2Te3), as represented by one of the topological insulators (TI) materials, have attracted tremendous interests from world-wide scientists due to their potential applications in electronic devices. However, the growth mechanism especially chemical vapour deposition (CVD) and the optoelectronic device applications of these Bi2Te3 nanostructures have barely been investigated and reported. In this work, we present a detailed study on the controlled CVD growth of 2D Bi2Te3 nanostructures and explore their applications in high performance visible photodetectors. With increasing the precursor material temperature from 470 °C to 510 °C, it is observed that the lateral size of Bi2Te3 nanoplates first increases and then becomes saturated when the precursor material temperature over 490 °C, which is mainly due to the competition between the transportation and diffusion of precursor molecules onto the substrate surface and the reaction consumption of precursor atoms on the substrate surface. In addition, it is also observed that the lateral size of Bi2Te3 nanoplates decreases with increasing the total inner tube pressure as a result of the reduced diffusion rate of Bi2Te3 precursor molecules. 2D Bi2Te3 nanoplates with a lateral size over 10 μm can be obtained with applying proper precursor material temperature and total inner tube pressure. Furthermore, a visible photodetector is fabricated using few-layered 2D Bi2Te3 nanoplates grown in this work. This visible photodetector demonstrates a high responsivity of 23.43 AW−1 and a high detectivity of 1.54 × 1010 Jones, outperforming some visible detectors based on traditional 2D nanomaterials. Tche intensity-dependent photo-responsivity measurements show stable photoswitching behavior. This 2D Bi2Te3 nanoplate photodetector also presents high flexibility by showing no obvious performance degradation after being bent for 50 times. The results presented in this work will not only contribute to a comprehensive understanding of the CVD growth mechanism of Bi2Te3 nanostructures, but open up novel optoelectronic device applications for 2D Bi2Te3 nanostructures.

Piezo-phototronic Effect Enhanced Responsivity of Photon Sensor Based on Composition-Tunable Ternary CdSxSe1–x Nanowires

The piezotronic effect and piezo-phototronic effect on materials and devices have been widely studied in binary semiconductors. Wide-band ternary semiconductors are a great class of materials with potential application in nano/microdevices, because of their continuously tunable physical properties with composition. Here, we first demonstrate the piezo-photronics effect of ternary wurtzite structured nanowires (NWs), opening an innovative materials system. Single-crystal ternary CdSxSe1–x (x = 0.85, 0.60, and 0.38) NWs were synthesized with site-controlled compositions via a chemical vapor deposition process, and high-performance visible photodetectors (PDs) with fast response speed (<2 ms), high photosensitivity, high responsivity, and broadened photoresponse region (than CdS NW) were fabricated based on these ternary materials. By introducing an external tensile strain, the performance of PDs is enhanced by 76.7% upon 0.2 mW/cm2 442 nm light illumination for CdS0.85Se0.15 by the piezo-phototronic effect....

Plasmonic photosensitization of polyaniline prepared by a novel process for high-performance flexible photodetector.

We report the synthesis of a polyaniline (PAni)-gold nanoparticle (AuNP) composite thin film in a single step. A flexible high-performance visible photodetector is constructed using PAni-AuNP composite with low loading of AuNP, and optoelectronic properties of the device are evaluated. The present study demonstrates that a plasmonic hybrid nanocomposite prepared by a single-step novel plasma-based dry process could solve the low lifetime and performance-related issues of organic optoelectronic devices.