High-performance Spintronic Devices Research Articles

Van der Waals magnetic materials for current-induced control toward spintronic applications

AbstractSpintronics, leveraging electron spin for information processing, promises substantial advancements in energy-efficient computing. Van der Waals (vdW) magnetic materials, with their unique-layered structures and exceptional magnetic properties, have emerged as pivotal components in this field. This report explores the current-based control of vdW magnets, focusing on the spin–orbit torque (SOT) mechanism, which is crucial for spintronic applications. Key studies on Fe3GaTe2/Pt and Fe3GaTe2/WTe2 heterostructures are highlighted, demonstrating efficient SOT switching at room temperature. The advantages of vdW magnets for SOT switching, including high spin-torque efficiencies and superior interface quality, are discussed. The report also examines future directions, such as wafer-scale growth techniques, materials design for enhanced Curie temperatures (Tc), and the development of magneto tunnel junctions using all-vdW materials. These advancements underscore the potential of vdW magnetic materials in developing scalable, high-performance spintronic devices, paving the way for significant breakthroughs in energy-efficient computing. Graphical abstract

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal.

Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin-orbit torques (SOT) induced by the in-plane current in Fe3GeTe2 (FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for "writing" and "reading". Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM).

Polar phonons features and intrinsic dielectric properties of RE2CoMnO6 (RE = Tb, Dy, Ho, Tm and Yb) double perovskites

RE-based double perovskite (DP) oxides of the RE₂TMTM'O₆ family exhibit intriguing magnetodielectric (MD) properties and magnetocaloric effects (MCEs), making them promising candidates for applications in high-performance supercapacitors, memories, spintronic devices, and cryogenic magnetic refrigeration. This paper addresses the vibrational properties of RE2CoMnO6 (RE = Tb, Dy, Ho, Tm, and Yb) ceramics for the first time using infrared reflectance spectroscopy. The dielectric merit factors in the microwave (MW) range, including the quality factor (Qu) and the static dielectric constant (ɛ0), were estimated. It was observed that the intrinsic dielectric constants decrease from approximately 26.2 to 14.4 as the rare earth ionic radius decreases. The mean values of these compounds suggest their suitability for applications in MW circuitry devices.

Unneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions

Abstract For designing low-impedance magnetic tunnel junctions (MTJs), it has been found that tunneling magnetoresistance (TMR) strongly correlates with the insulating barrier thickness, imposing a fundamental question on the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs. Here, we investigate the influence of alumina barrier thickness on tunneling spin polarization (TSP) through a combination of theoretical calculations and experimental verification. Our simulating results reveal a significant impact of barrier thickness on TSP, exhibiting an oscillating decay of TSP with the barrier layer thinning. Experimental verification is realized on FeNi/AlO$_x$/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique. These findings provide valuable insights for the design of high-performance spintronic devices, particularly in applications such as MRAM, where precise control over the insulating barrier layer is crucial.

All Oxide-Based Magnetic Tunnel Junctions Fabricated by Focused Ion Beam Nanomachining Technique

This study offers a comprehensive investigation into the fabrication of all-oxide-based magnetic tunnel junctions (MTJs) utilizing the focused ion beam (FIB) nanomachining method. The oxide thin films of SrTiO3 (STO), La[Formula: see text]CaxMnO3 (LCMO) and La[Formula: see text]SrxMnO3 (LSMO) were grown using pulsed laser deposition (PLD). Magnetization measurements at 5K revealed a notable difference in coercivity between LCMO and LSMO films, highlighting their suitability as electrodes in MTJ device fabrication. The deposited trilayer structure of LCMO/STO/LSMO exhibited heteroepitaxial growth, enabling the independent magnetic switching of electrode layers in the MTJ with the STO barrier layer. Conventional photolithography and ion milling were used to create a series of 4[Formula: see text][Formula: see text]m Hall bar tracks in the deposited films. Nanopillar devices, sized 250[Formula: see text]nm[Formula: see text]×[Formula: see text]250[Formula: see text]nm, were successfully fabricated on these 4[Formula: see text][Formula: see text]m tracks by optimizing the FIB nanomachining technique. The fabricated MTJs demonstrated a high tunnel magnetoresistance (TMR) response, leading to the conclusion that the FIB nanomachining technique holds significant promise for the development of high-performance oxide-based spintronic devices.

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Semiconductor spintronics has brought about revolutionary application prospects in future electronic devices. The tunnel junction plays a key role in achieving efficient spin injection in semiconductors. This work employed the GaN semiconductor as a room-temperature spin injection system, taking advantage of its weak spin–orbit coupling and spin scattering. By introducing a lattice-matched AlN barrier layer to improve the tunneling interface, advanced spin injection and transport were realized compared with traditional oxide barriers. The spin polarization was further improved by modulating the applied bias, and a bias-controlled tunneling enhancement mechanism was revealed. Consequently, we demonstrated a high record of spin polarization of 20.5%. This work paves a feasible route for achieving efficient spin injection and transport in GaN, which will further promote the development of room-temperature and high-performance spintronic devices.

Low Gilbert damping and high perpendicular magnetic anisotropy in an Ir-coupled L10-FePd-based synthetic antiferromagnet

Thin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit-nm lateral size. Here, we demonstrate that an epitaxial synthetic antiferromagnet can be formed from L10 FePd, a candidate material with large magnetocrystalline anisotropy energy, through insertion of an ultrathin Ir spacer. Tuning of the Ir spacer thickness leads to synthetic antiferromagnetically coupled FePd layers, with an interlayer exchange field upwards of 0.6 T combined with a perpendicular magnetic anisotropy energy of 0.95 MJ/m3 and a low Gilbert damping of 0.01. Temperature-dependent ferromagnetic resonance measurements show that the Gilbert damping is mostly insensitive to temperature over a range of 20 K up to 300 K. In FePd|Ir|FePd trilayers with lower interlayer exchange coupling, optic and acoustic dynamic ferromagnetic resonance modes are explored as a function of temperature. The ability to engineer low damping and large interlayer exchange coupling in FePd|Ir|FePd synthetic antiferromagnets with high perpendicular magnetic anisotropy could prove useful for high performance spintronic devices.

Dynamic Manipulation of Chiral Domain Wall Spacing for Advanced Spintronic Memory and Logic Devices.

Nanoscopic magnetic domain walls (DWs), via their absence or presence, enable highly interesting binary data bits. The current-controlled, high-speed, synchronous motion of sequences of chiral DWs in magnetic nanoconduits induced by current pulses makes possible high-performance spintronic memory and logic devices. The closer the spacing between neighboring DWs in an individual conduit or nanowire, the higher the data density of the device, but at the same time, the more difficult it is to read the bits. Here, we show how the DW spacing can be dynamically varied to facilitate reading for otherwise closely packed bits. In the first method, the current density is increased in portions of the conduit that, thereby, locally speeds up the DWs, decompressing them and making them easier to read. In the second method, a localized bias current is used to compress and decompress the DW spacing. Both of these methods are demonstrated experimentally and validated by micromagnetic simulations. DW compression and decompression rates as high as 88% are shown. These methods can increase the density with which DWs can be packed in future DW-based spintronic devices by more than an order of magnitude.

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+xCo2−xAl Heusler alloys

Perpendicularly magnetized Co-based Heusler alloys are promising candidates in high-performance spintronic devices. However, there is a contradiction between thermal stability and damping-like spin–orbit torque (SOT) efficiency in Co-based Heusler alloys with interface-induced perpendicular magnetic anisotropy (PMA). Here, we present epitaxially grown perpendicularly magnetized Mn1+xCo2−xAl (MCA) Heusler alloys through tetragonal distortion. Ferrimagnetism and distortion-induced PMA are obtained in MCA Heusler alloys. A large effective spin Hall angle (θeff) up to 0.33 is experimentally demonstrated in Pt/MCA bilayers, markedly surpassing that in conventional Pt/FM bilayers. Consequently, SOT-induced efficient magnetization switching is realized in Pt/MCA bilayers, with a critical switching current density (Jc) as low as 4 × 107 A/cm2. The large θeff and high SOT efficiency would be attributed to the staggered magnetic exchange torques in the ferrimagnetic MCA Heusler alloys. These findings demonstrate that perpendicularly magnetized ferrimagnetic MCA Heusler alloys are highly promising for high-density SOT-magnetic random-access memory with superior thermal stability and low power consumption.

Exploring stable half-metallicity and magnetism of Cr-based double half-Heusler alloys and its high magnetoresistance ratio in magnetic tunnel junction

A new series of double half-Heusler (DHH) alloy Cr2FeCoZ2 (Z = As, Ge, S, P) are investigated by using the non-equilibrium Green's function in combination with the first-principles calculations. The calculations on magnetism reveal that these Cr-based DHH alloys are ferrimagnets due to the antiparallel magnetic coupling between Cr and Fe (Co). The electronic structure calculations of the Cr-based DHH alloys reveal half-metallicity, and Cr2FeCoAs2 possesses the largest spin-down gap of 1.181 eV. Within the c/a ranges from 1.60 to 2.52, Cr2FeCoAs2 maintains its 100 % spin-polarization, and the changes in total and spin-resovled atomic magnetic moment are negligible, showing a stable half metallicity and magnetism against the tetragonal distortion. Futhermore, the transport properties are investigated by constructing the Cr2FeCoZ2/GaAs/Cr2FeCoZ2 magnetic tunnel junction (MTJ) model. By changing the magnetic arrangement of the left and right electrodes into antiparallel configuration, the capability of transportation in both spin channels is significantly limited. Conversely, by modulating the magnetic arrangement of the left and right electrodes into parallel configuration, the transportation of electrons in spin-up channel is exceptionally strong while that of the spin-down channel is severely impeded. The Cr2FeCoAs2/GaAs/Cr2FeCoAs2 MTJ owns the highest tunneling magnetoresistance (TMR) ratio of ∼7.42 × 108 %, indicating that Cr2FeCoAs2 is the most promising candidate for high performance spintronic devices.

Manipulation of high-frequency spin waves in ferromagnetic thin films via magnetic torques induced by ultrafast demagnetization

Spin-based technologies demand the effective excitation and control of high-frequency spin waves in order to increase the operational speed of magnonic logic circuits. An available option for the high-frequency spin wave is the perpendicular standing spin waves (PSSWs) in ferromagnetic thin films. However, the practical utilization of a PSSW is still challenging due to a few unsolved critical issues such as its relatively low amplitude and simultaneous excitation of other PSSW modes. Here, efficient excitation and control of a first-order PSSW mode are demonstrated in Ni80Fe20 thin films using a double-laser-pulse scheme. Based upon our experimental and theoretical investigations, it is found that the precession amplitudes of the Kittel and PSSW modes show strong dependence on equivalent torques (i.e., the averaged torques during fast relaxation process after the second pulse excitation) applied to these two modes. Thus, selective excitation and amplification of the first-order PSSW mode can be realized by manipulating the equivalent torque, i.e., introducing a second laser pulse with an appropriate arrival time and laser fluence. Moreover, the spectral tuning of this single PSSW mode can be achieved by proportionately adjusting the laser fluence of two pump pulses. These findings may pave the way for the realization and construction of future high-performance spintronic devices.

Significant effects of magnetic electrodes on rhenium phthalocyanine molecules

The investigation focused on examining the spin polarization and thermal spin polarization transport characteristics of dual rhenium phthalocyanine (Re2PC2) molecular junctions. This analysis was conducted using first-principles density-functional theory and the non-equilibrium Green's function approach. Calculations were performed on molecular junctions in two configurations: one at a non-magnetic electrode (Au) and the other at a magnetic electrode (Ni). A comparison of the spin transport properties of the two electrodes shows significant differences. The magnetic electrode has a notable effect on the spin-polarization and thermal spin-polarization transport properties of the devices. In contrast, the nickel electrode bis-phthalocyanine rhenium molecular device exhibits perfect spin/thermal spin-filtering efficiencies in a parallel structure. The properties of the dual phthalocyanine rhenium molecular devices were significantly affected by the nature of the electrodes. This makes dual rhenium phthalocyanine molecular junctions have great potential for the development of high-performance multifunctional spintronic and spin caloritronic devices.

Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on novel states of two-dimensional (2D) magnetic materials will significantly improve the value of the tunneling magnetoresistance (TMR) ratio. However, most 2D magnetic materials exhibit low critical temperatures, limiting their functionality to lower temperatures rather than room temperature. Moreover, most MTJs experience the decay of TMR ratio at large bias voltages within a low spin injection efficiency (SIE). Here, we construct a series of MTJs with Weyl half-semimetal (WHSM, e.g. MnSiS3, MnSiSe3, and MnGeSe3 monolayers) as the electrodes and investigate the spin-dependent transport properties in these kind of lateral heterojunctions by employing density functional theory combined with non-equilibrium Green’s function method. We find that an ultrahigh TMR (∼109%) can be obtained firmly at a small bias voltage and maintains a high SIE even at a large bias voltage, and MnSiSe3 monolayer is predicted to exhibit a high critical temperature. Additionally, we reveal that the same structure allows for the generation of fully spin-polarized photocurrent, irrespective of the polarization angle. These findings underscore the potential of WHSMs as candidate materials for high-performance spintronic devices.

Two-dimensional monolayer CrGaS3: A ferromagnetic semiconductor with high Curie temperature and tunable magnetic anisotropy

Two-dimensional (2D) intrinsic ferromagnetic (FM) materials are promising candidates for fabricating next generation high-performance spintronic devices. However, all experimentally verified 2D FM semiconductors have Curie temperature (Tc) far below room temperature, which hinders their practical applications. Based on first-principles calculations, a stable and previously undiscovered 2D CrGaS3 structure is predicted, which is a semiconductor with an indirect bandgap of 1.99 eV and displays out-of-plane magnetic anisotropy. More importantly, it exhibits high-temperature ferromagnetism, with Tc ranging between 520 and 814 K. The high Tc is attributed to the presence of both direct-exchange and super-exchange interactions that are ferromagnetic, along with the eg-px/py-eg super exchange having a zero virtual exchange gap. Furthermore, it has been observed that the magnetic anisotropy can be tuned by external strain. These findings indicate its potential as a promising candidate for the rapid development of 2D spintronic applications.

Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA) effect for an ultrathin CoFeB layer in bottom-free type MgO-based magnetic tunnel junctions prepared by a mass production sputtering process. We used Ta and TaB buffers and compared the differences between them. The TaB buffer enabled us to form a flat and less-contaminated CoFeB/MgO interface by suppressing the diffusion of Ta with maintaining a stable amorphous phase. Furthermore, the introduction of cryogenic temperature deposition for the ultrathin CoFeB layer on the TaB buffer improved the efficiency of the VCMA effect and its annealing tolerance. Combining this with interface engineering employing an Ir layer for doping and a CoFe termination layer, a large VCMA coefficient of −138 ± 3 fJ/Vm was achieved. The developed techniques for the growth of ultrathin ferromagnet and oxide thin films using cryogenic temperature deposition will contribute to the development of high-performance spintronic devices, such as voltage-controlled magnetoresistive random access memories.

Spin valve effect in CrN/GaN van der Waals heterostructures

In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices.

Structural, electronic and magnetic properties of Fe-doped strontium ruthenates

By employing a combined approach of density-functional theory (DFT) and dynamical mean-field theory (DMFT) calculations, we examine the structural, electronic, and magnetic characteristics of two distinct strontium ruthenates: Sr2RuO4, an unconventional superconductor, and the correlated metal SrRuO3, both at 50% Fe-doping level. In both Sr2Fe0.5Ru0.5O4 and SrFe0.5Ru0.5O3, the original ruthenium (Ru) and the dopant iron (Fe) atoms adopt 3-dimensional and 2-dimensional G-type structures, respectively. The hybridization between Fe-3d and Ru-4d is comparatively weaker than in other double perovskite systems. The interplay between strong correlations and reduced itinerancy results in significant spin splitting at Fe and Ru sites. Consequently, a charge transfer process, along with the super-exchange effect, leads to antiferromagnetically coupled Fe3+ and Ru5+ ions and establishes a semiconducting ferrimagnetic order. Subsequent DMFT calculations demonstrate the persistence of the ferrimagnetic order even at room temperature (300 K). These findings align with prior reports on SrFe0.5Ru0.5O3, thus reinforcing the notion that 3d–4d transition metal oxides hold considerable promise as candidates for high-performance spintronic devices, such as spin-valve sensors and spintronic giant magnetoresistance devices.

Ultrafast laser-induced precession dynamics in perpendicular artificial ferrimagnetic [D022-Mn3Ga/Co2MnSi]5 superlattices

Artificial ferrimagnetic [D022-Mn3Ga/Co2MnSi]N superlattices ([Mn3Ga/CMS]N SLs) combining perpendicular magnetic anisotropy as well as exceptional thermal and magnetic stability hold promises in functional spintronic devices. However, the relevant precession dynamics are still lacking. Here, we report on the magnetic dynamic properties in [Mn3Ga/CMS]5 SLs investigated by the time-resolved magneto-optical Kerr effect (TRMOKE) measurements. The magnetization precession process and magnetic damping constant (α0) of [Mn3Ga/CMS]5 SLs rely heavily on the thickness of Mn3Ga layer (tMn3Ga). In addition, α0 is found to be higher with increasing tMn3Ga, but is not simply scaled by the uniaxial magnetic anisotropy (Ku), which can be ascribed to the contribution of spin–orbit interaction combined with the additional contributions, like spin-pumping. Furthermore, a large Ku value of 1.33 Merg/cm3 and a low α0 of 0.022 have been simultaneously obtained in [Mn3Ga/CMS]5 SL with tMn3Ga = 1.5 nm. This study contributes to the design of high-performance spintronic devices based on [Mn3Ga/CMS]N SLs.

Manipulation of spin–orbit torque and Dzyaloshinskii-Moriya interaction by varying Mn concentration in Pt1-xMnx/Co bilayer

Reducing critical current density (JC) of current-driven magnetization switching via power-efficient spin–orbit torque (SOT) is a key challenge in spin-based memory and logic devices. The Pt1-xMnx alloy shows prospect for enhancing the damping-like SOT efficiency (ξDL) while maintaining relatively low resistivity and power consumption. In this work, we investigated the Mn concentration x dependence of ξDL in Pt1-xMnx/Co bilayer and observed a nonmonotonic variation with the maximum ξDL ≈ 0.25 appearing around x = 0.2. The increase of the Pt1-xMnx layer resistivity is the main contribution to the enhancement of ξDL. Mn atoms doped in Pt not only modulate ξDL originating from the spin Hall effect of the Pt1-xMnx layer, but also affect the interfacial phenomena at the Pt1-xMnx/Co interface. We find that the related interfacial Dzyaloshinskii-Moriya interaction (DMI) is also tunable by x with the maximum appearing around x = 0.15. The significantly reduced JC of Pt1-xMnx/Co bilayer is mainly due to the enhancement of ξDL and the attenuation of effective perpendicular magnetic anisotropy energy density. Meanwhile, Pt1-xMnx/Co bilayer maintains low power consumption and necessary thermal stability. Our work highlights the potential of alloying Pt with Mn as a valuable means to achieve high-performance SOT spintronic devices.

Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Defects play a crucial role in modulating the properties of solid-state materials by inducing localized states that often benefit magnetic moments. Recently, direct experimental observations have shown the appearance of bunches of eight-atom-ring line defects in the T-phase VSe2 monolayer, a remarkable room-temperature two-dimensional magnetic metal. Using first-principles calculations, we have found that these line defects could enhance the magnetic moments, and half-metallicity (nearly 100% spin polarization) can be achieved in the structure with the densest defects. Furthermore, our analysis of the partial charge density distribution shows that a closer inter-defect distance between the d-states of vanadium atoms and p-states of selenium atoms increases the penalty of electrons occupying the spin-minority states. Moreover, we have discovered the high conductivity channel exhibits negative differential resistance characteristics within a bias range of 0.2 to 0.4 V (–0.4 to –0.2 V). Our findings broaden the scope of the applications of two-dimensional materials in spintronics and provide some theoretical guidance for the design of high-performance spintronic devices.