High-performance Memory Research Articles

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory

Though much progress has been achieved in the discovery of new molecular ferroelectrics in recent years, practical applications and related physics are still rarely explored due to the difficulty in high-quality film production and patterning issues. Single-crystalline films and patterns are in high demand for high device performance. Through a template-assisted space-confined strategy, herein, ordered single-crystalline nanowire patterns and optoelectronic devices of a semiconducting molecular ferroelectric (SMF), hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5), were successfully demonstrated. The coupling of semiconducting and ferroelectric polarization of the SMF devices enables a broadband self-powered photodetection from ultraviolet to visible light, as well as polarization-tunable photoresponsivity. These may open an avenue for high-performance SMF optoelectronic memory devices with low cost and flexibility.

Working Memory Performance Classification in Children Using Electroencephalogram (EEG) and VGGNet

This study investigates the relationship between EEG and different levels of working memory performance in children. A total of two hundred thirty subjects have volunteered for the study. Initially, the students are required to answer psychometric tests to gauge their working memory performance. Based on the scores obtained, the students are then segregated in high, medium, and low working memory performance groups. Resting EEG is recorded from prefrontal cortex and pre-processed for noise removal. Synthetic EEG is then generated to balance out and enhance the number of samples to two hundred for every control group. Next, short-time Fourier transform is applied to convert the signal to spectrogram. The feature image is used to train the VGGNet model. The deep learning model has been successfully developed with 100% accuracy for training, and 85.8% accuracy for validation. These indicate the potential of assessing working memory performance alternatively using EEG and VGGNet model.

Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories.

Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation storage technologies due to its simple structure, high running speed, excellent durability, high integration density, and low power consumption. This paper focuses on the application of organic-inorganic hybrid perovskite (OIHP) materials in RRAM by introducing an innovative three-dimensional POPA modification strategy, which is realized by binding octa-amine-polyhedral oligomeric silsesquioxanes (8NH2-POSS) onto the side chains of poly(acrylic acid) (PAA), thereby enhancing the material's resilience under elevated temperatures and humidity conditions. POPA cross-links with perovskite grains at crystalline boundaries through multiple -NH3+ and -C═O chemical anchoring sites on its branch chain, enhancing the grain adhesion, optimizing the film quality, and improving the cage structure distribution at the perovskite grain boundaries. The experimental results demonstrate that the POPA-modified OIHP RRAM exhibits an excellent resistance switching performance, with an optimal ON/OFF ratio of 5.0 × 105 and a data retention time of 104 s. After 150 days of environmental exposure, the ON/OFF ratio remains at 1.0 × 105, indicating good stability. Furthermore, the POPA modification endows the perovskite film with considerable flexibility, maintaining stable resistance switching performance under various bending radii. This study provides a vital reference for flexible, high-performance, and long-lifespan perovskite memory devices.

Phase transition behavior and electrical properties of C/Sb2Te3 multilayer films on flexible polyimide substrates

Phase change memory has become one of the ideal choices for flexible electronic memory due to its advantages of fast operation speed, high durability and low power consumption. This paper is dedicated to the preparation of C/Sb2Te3 multilayer films on polyimide (PI) substrates for high-performance flexible phase change memory (FPCM). The findings indicate that C/Sb2Te3 multilayer films on PI substrates exhibit superior thermal stability (higher than that of Silicon substrates) and excellent mechanical bending properties (up to 1 × 104 bending cycles). The variations in optical properties, crystal structure, resistance drift and morphology were systematically investigated for the flat state, 5 × 103 bending cycles and 1×104 bending cycles. FPCM devices based on [C (2 nm)/Sb2Te3 (10 nm)]5 multilayer films have been fabricated, which are capable of reversible SET/RESET operation in the flat, bending state and 1 × 103 bending cycles. An electrothermal model of the FPCM device cell based on C/Sb2Te3 was constructed, and the simulation results confirmed its good thermal confinement capability (∼1278 K). This study demonstrates the potential of C/Sb2Te3 multilayer films based on PI substrates in FPCM.

Enhancement of perpendicular magnetic anisotropy in W/Co/Pt films by nitrogen doping in the W layer

The modulation of perpendicular magnetic anisotropy (PMA) in films has been the subject of considerable research interest, as it is proposed to be a key component for the design and realization of efficient magnetic switching in spintronic devices. In this study, we report the appearance of PMA in the as-deposited WNx/Co/Pt films without annealing. The strength of the PMA is quantified by means of effective magnetic anisotropy constant Keff, which is correlated with the N2 gas/Ar gas flow rate ratio PN2. The highest Keff value, 1.347 × 106 erg/cm3, is obtained for the sample deposited with PN2 of 40%. This phenomenon can be explained in two ways. On the one hand, the results of the experiment demonstrate that appropriate nitrogen doping can facilitate the formation of an ideal nitrided state at the WNx/Co interface, while simultaneously reducing the roughness of the WNx/Co interface, which, in turn, enhances the PMA of the WNx/Co/Pt films. On the other hand, the first-principles calculations indicate that the enhancement of PMA can be attributed to the modification of orbital hybridization at the Co/Pt interface by WNx. This innovative approach has the potential to advance the development of high-performance magnetic random-access memory devices.

Gradient Mo1−xWxSe2 monolayer alloys: Synthesis and multifunctional applications

With the continuous and rapid development of electronic information technology, the demand for new materials with miniaturization, high integration, high performance, and multifunction is becoming increasingly urgent. However, it is difficult for existing photodetectors based on a single material to achieve multi-functionality while maintaining excellent performance, and the devices based on heterostructures are faced with complex preparation and compatibility problems. In this work, gradient Mo1−xWxSe2 monolayer alloys with high crystal quality have been synthesized by an evaporation-assisted chemical vapor deposition method. The composition of the synthesized Mo1−xWxSe2 monolayer alloys varies gradually with x ranging from 0 to 1. The Mo1−xWxSe2 based photodetector shows superior photoresponse performance in the visible wavelength with maximum responsivity of 26 A/W and external quantum efficiency up to 6320 % under 520 nm laser irradiation. Besides, the Mo1−xWxSe2 device is capable of high-resolution imaging, which can be used as image sensor. Moreover, nonvolatile memory function has also been realized in the device because the band gap of Mo1−xWxSe2 can be effectively adjusted by the gradient distribution of the component and the deep energy levels caused by Se vacancies can be modulated to shallow energy levels. A thrilling discovery is that the gradient Mo1−xWxSe2 alloy device can simulate the biological synapses successfully, including paired-pulse facilitation, short-term plasticity, long-term plasticity and learning process. The realization of high-performance photodetection, visualization, nonvolatile memory and synaptic simulation based on a single gradient crystal offers a new type of material to develop advanced optoelectronic devices with multiple functions.

4D Printing of High-Performance Shape Memory Polymer with Double Covalent Adaptive Networks

Achieving 4D printing of shape memory polymers with both high strength and high transition temperature remains challenging due to the inherent incompatibility between the rigid molecular structure required for high strength and the molecular structure that moves on demand necessary for the shape memory effect, the limitations of high-performance polymer reaction kinetics, as well as internal stress during the printing process. Here, a direct ink writing (DIW) printed high-precision cyanate ester-urethane (CU) shape memory polymer with excellent performance was accomplished by incorporating two dynamic covalent bonds (carbamate and cyanuric acid) through copolymerizing cyanate ester with polyurethane acrylates. During curing, carbamate and cyanuric acid enable stress relaxation and polymer network rearrangement, facilitating the permanent reconfiguration of CU to form a novel triazine network structure. As a result, a high mechanical properties CU with excellent strength (83 MPa) and superior Young's modulus (2.37GPa) were obtained, besides, the transition temperature (near 250 oC) is the highest in comparison to currently reported 4D-printed shape memory polymers. Furthermore, this reconfigurability was demonstrated by imprinting various surface patterns at microscopic level. Moreover, the reconfigurability of CU provides a novel strategy for smart molds in deformation and easy demolding. Overall, this study opens up a new avenue for the development of high-performance 4D printed shape memory polymers.

Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

In this study, a high-performance non-volatile bipolar resistive random-access memory (RRAM), which was fabricated using an ultra-thin barium titanate (BaTiOx, BTO) film as a resistive switching (RS) layer, was demonstrated. The BTO RS layers, whose thicknesses were only about 5 nm, were prepared using radio-frequency sputtering under different oxygen flow rates. Introduction of oxygen was used to modify the chemical compositions of the BTO films. Copper was used as the top electrode material to realize a Cu/BTO/n+-Si electrochemical metallization memory, where the resistance switching was triggered by electrochemical reaction of Cu electrode. The RRAM could repeatedly and consistently switch between a high-resistance state and a low-resistance state over 300 cycles. A large memory window of 105 and a long data retention time of >1.5 × 104 s both at room temperature and 85 °C were observed. Moreover, the Cu/BTO/n+-Si RRAM showed high switching speeds of 60–70 ns.

Large resistive switching in ultrathin BiFeO3 thin films

Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼106 is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.

Asymmetrically Functionalized Phenanthro[9,10-d]imidazole-Based Donor–Acceptor Architectures for High-Performance Ternary Memory Devices

Asymmetrically Functionalized Phenanthro[9,10-d]imidazole-Based Donor–Acceptor Architectures for High-Performance Ternary Memory Devices

A Review Paper on Memory Fault Models and its Algorithms

The significance of testing semiconductor memories has grown significantly in the semiconductor industry due to the increased density of modern memory chips. This paper aims to investigate and analyze different types of functional faults present in today's memory technology. These faults include stuck-at faults, transition faults, coupling faults, address decoder faults, and neighborhood pattern-sensitive faults. The paper also delves into the techniques utilized to identify and detect these faults. In particular, the focus is placed on the importance of zero-one, checkerboard, and March pattern tests, which are widely employed to assess functional memory defects at different levels, such as the chip level, array level, and board level. Furthermore, the study provides an in-depth exploration of various test algorithms and thoroughly examines their fault coverage capabilities. Overall, this review paper provides valuable insights into the challenges posed by the dense nature of modern memory chips and offers a comprehensive analysis of functional faults in memory technology. By emphasizing the importance of testing and presenting a detailed exploration of fault detection methods and test algorithms, this study contributes to the advancement of reliable and high-performance memory devices in the electronic industry suggesting that MARCH algorithms outperform others when considering factors like fault coverage, power efficiency, area optimization, and time complexity parameters, making them the preferable choice for reliable and high-performance memory devices in the electronic industry.

Polar phonons features and intrinsic dielectric properties of RE2CoMnO6 (RE = Tb, Dy, Ho, Tm and Yb) double perovskites

RE-based double perovskite (DP) oxides of the RE₂TMTM'O₆ family exhibit intriguing magnetodielectric (MD) properties and magnetocaloric effects (MCEs), making them promising candidates for applications in high-performance supercapacitors, memories, spintronic devices, and cryogenic magnetic refrigeration. This paper addresses the vibrational properties of RE2CoMnO6 (RE = Tb, Dy, Ho, Tm, and Yb) ceramics for the first time using infrared reflectance spectroscopy. The dielectric merit factors in the microwave (MW) range, including the quality factor (Qu) and the static dielectric constant (ɛ0), were estimated. It was observed that the intrinsic dielectric constants decrease from approximately 26.2 to 14.4 as the rare earth ionic radius decreases. The mean values of these compounds suggest their suitability for applications in MW circuitry devices.

Supercapacitor electrodes based on Ru/RuO2 decorated on N,S-doped few-layer graphene

Innovatively designed flexible and high-performance shape memory polymer supercapacitors are promising next-generation energy storage devices for portable and wearable electronics. Therefore, thermally induced smart shape memory polymer polyurethane was synthesized using polycaprolactone/poly(ethylene glycol)/hexamethylene diisocyanate (PCL/PEG/HDI) in which the incorporation of PEG successfully assisted in lowering the transition temperature. The resulting polymer exhibits a remarkable transition temperature of 50 °C and a shape recovery ratio of 100 % at a strain of 300 %. The smart polymer was coated with a silver paste to ease the electron flow followed by coating with the electrode. Hybrid electrode materials are prepared in two stages. Initially, a few layers of holey-graphene were synthesized, where BET surface area reveals the presence of pores that are tuned by isothermal treatments in O2-atmosphere. Subsequently, active hybrid electrode materials nanostructured Ru/RuO2 decorated N, S-doped few layers of holey graphene were synthesized using hydrothermal methods. Here, nitrogen and sulfur doping in the basal or edge plane served as catalysts and metal coordination sites, facilitating the uniform distribution of ruthenium nanoparticles on the graphene. It is further confirmed by the density function theory (DFT) calculation using the adsorption energy. The optimized hybrid electrode material demonstrates a specific capacitance of 1297 mFcm−2 at a current density of 2 mAcm−2. A flexible-shape memory polymer supercapacitor exhibits a notable device-specific capacitance of 189 mFcm−2 at a current density of 1 mAcm−2, a high energy density of 45 µWhcm−2 at a power density of 0.25 mWcm−2, with 81 % of specific capacitance retention after eight shape programming and recovery cycle. Excellent shape recoverability and robust electrochemical performance make the as-fabricated symmetric supercapacitors a promising candidate for integration in flexible electronic applications.

Exploring the Adaptability of 4D Printed Shape Memory Polymer Featuring Dynamic Covalent Bonds.

4D printing (4DP) of high-performance shape memory polymers (SMPs), particularly using digital light processing (DLP), has garnered intense global attention due to its capability for rapid and high-precision fabrication of complex configurations, meeting diverse application requirements. However, the development of high-performance dynamic shape memory polymers (DSMPs) for DLP printing remains a significant challenge due to the inherent incompatibilities between the photopolymerization process and the curing/polymerization of high-strength polymers. Here, a mechanically robust DSMP compatible is developed with DLP printing, which incorporates dynamic covalent bonds of imine linking polyimide rigid segments, exhibiting remarkable mechanical performance (tensile strength ≈41.7MPa, modulus ≈1.63GPa) and thermal stability (Tg ∼ 113°C, Td ∼ 208°C). More importantly, benefiting from the solid-state plasticity conferred by dynamic covalent bonds, 4D printed structures demonstrate rapid network adaptiveness, enabling effortless realization of reconfiguration, self-healing, and recycling. Meanwhile, the extensive π-π conjugated structures bestow DSMP with an intrinsic photothermal effect, allowing controllable morphing of the 4D configuration through dual-mode triggering. This work not only greatly enriches the application scope of high-performance personalized configurations but also provides a reliable approach to addressing environmental pollution and energy crises.

Mgikit: demultiplexing toolkit for MGI fastq files.

MGI sequencing is reported to be an inexpensive solution to obtain genomics information. There is a growing need for software and tools to analyse MGI's outputs efficiently. mgikit is a tool collection to demultiplex MGI fastq data, reformat it effectively and produce visual quality reports. mgikit overcomes several limitations of the standard MGI demultiplexer. It is highly customizable to suit different kinds of datasets and is designed to achieve high performance and optimal memory utilization. The tool and its documentation are available at: https://sagc-bioinformatics.github.io/mgikit/.

Controllable fabrication of shape memory epoxy resin filament by polymerization-melting-mixing-drawing process and performance regulation

ABSTRACT This work controlled the polymerization reaction, melting, and mixing processing of a mixture including epoxy resin and polyethylene glycol (PEG) by a pulverizer, to effectively develop high-performance shape memory epoxy/PEG (EPP) filaments. The process parameters of polymerization-melting-mixing-drawing were determined through the extrusion force investigation. The results showed that EPP mixtures could be developed into filaments through polymerization-melting-mixing-drawing process, reducing the spinning temperature and filament diameter from 300°C and 31 mm to 235°C and 13 mm, respectively. The Fourier transform infrared spectra confirmed the complete polymerization of epoxy resin and the stable existence of PEG. EPP filaments developed through the polymerization-melting-mixing-drawing process have exhibited controllable dynamic thermal mechanical properties and Tg, excellent shape recovery effects, and adjustable stimulus temperature. This work developed shape memory EPP filaments through a polymerization-melting-mixing-drawing process, with controllable spinnability and adjustable stimulus temperature, providing a reference for high-performance filament fabrication and process optimization.

Cyclic tensile response and crack closure performance of novel superelastic Ni-Ti SMA cable grid-reinforced engineered cementitious composites

To further improve the tensile and self-healing properties of engineered cementitious composites (ECCs) for their special uses such as harsh environments, plastic hinge regions, and old members strengthening, an innovative high-performance superelastic Ni-Ti shape memory alloy (SMA) cable grid-reinforced ECC (SMACG-ECC) was first proposed and tested in this study. The effects of water-binder ratio, cable grid material, and reinforcement ratio on the cyclic tensile properties and crack closure performance of the proposed SMACG-ECC were systematically examined. Test results revealed that the tensile strength, initial crack strength, ultimate tensile strain, dense crack, crack closure, and self-healing properties of the traditional ECC were obviously improved by being reinforced with the SMACG. Compared with the ordinary steel cable grid-reinforced ECC (SCG-ECC), the proposed SMACG-ECC exhibited approximately 50 % lower first crack strength, similar tensile strength and deformation ductility, but a 53.7 %-75.1 % greater energy dissipation, 75.8 %-80.2 % lower residual strain, and 80.4 %-83.4 % smaller maximum residual crack width. The tensile properties, cracking performance, and self-healing ability improved with the incorporation of SMACG as well as the increase in reinforcement ratio. Notably, most specimens showed satisfactory composite operation with no cable ends slipping during the entire cyclic loading process, with a maximum tensile strain amplitude of 8 %.

Interactions among neighborhood conditions, sleep quality, and episodic memory across the adult lifespan

ABSTRACT Objectives On average, adults racialized as non-Hispanic Black and Hispanic sleep more poorly than adults racialized as non-Hispanic White (hereafter, Black, Hispanic, White), but associations between factors that may moderate sleep-memory associations in these groups, such as neighborhood conditions, are unclear. Poorer neighborhood conditions (e.g. lower neighborhood cohesion) may be negatively associated with sleep quality and multiplicatively influence sleep-memory associations. We hypothesized lower ratings of neighborhood conditions would be associated with poorer sleep quality and moderate the association between sleep quality and episodic memory, especially in Black and Hispanic adults, who are disproportionately situated in poor neighborhood conditions. Design Seven-hundred-thirty-six adults across the adult lifespan (27-89 years) were recruited from the northern Manhattan community as a part of the Offspring Study of Racial and Ethnic Disparities in Alzheimer’s disease. Sleep quality was assessed using a modified version of the Pittsburgh Sleep Quality Index, and episodic memory was evaluated with the Buschke Selective Reminding Test. With multiple regression models, we measured associations between perceived neighborhood conditions and sleep quality and the interaction between sleep quality and neighborhood conditions on episodic memory stratified by racial/ethnic and gender identity groups. Results Overall, poorer neighborhood conditions were associated with poorer sleep quality. In Black and Hispanic women, the sleep-memory association was moderated by neighborhood conditions. With more favorable neighborhood conditions, Black women showed an association between higher sleep quality and higher memory performance, and Hispanic women showed a protective effect of neighborhood (higher memory even when sleep quality was poor). Conclusion Poorer neighborhood experiences may contribute to poorer sleep quality across groups. In Black and Hispanic women, the association between sleep quality and episodic memory performance was dependent upon neighborhood conditions. These findings may inform tailored, structural level sleep interventions, aimed to improve neighborhood experiences and thereby sleep quality and episodic memory.

Ultra-low stress-hysteresis and huge superelasticity in NiMn-based shape memory microwire

Hysteresis related to first-order phase transformation in shape memory alloys, which is the macroscopic manifestation of energy dissipation, is detrimental to the precise control of actuation and causes structural and functional fatigue of components. It is of vital importance to explore high-performance shape memory alloys with low stress-hysteresis, large superelasticity, and wide temperature range operation in practical applications. Here, we have developed a Ni-Mn-Fe-In shape memory microwire, exhibiting an ultra-low stress-hysteresis and huge tensile superelasticity in a wide temperature range. The microwire shows a smooth surface and a single crystal structure (with ⟨001⟩A-oriented along the axial direction of microwire), and the microstructure of the microwire contains austenite matrix and sparsely distributed precipitates with an average size of 20–80 nm, all of which may be beneficial to obtain low hysteresis and large strains in the microwire. As a result, the microwire exhibits a minimum stress-hysteresis of as low as 8.5 MPa (with overall strain of 15.3%) and corresponding energy dissipation as low as 1.44 MJ/m3. The microwire always shows a low stress-hysteresis (less than 24 MPa) and low energy dissipation (less than 2.86 MJ/m3) above room temperature. The microwire shows a huge superelasticity with recoverable strains higher than 15% in the wide temperature range from 218 to 418 K. Together with the advantages of easy fabrication and no post-processing required, this microwire shows a tremendous potential for cyclic actuators and energy conversion devices under multi-field coupling.

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.

Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor memories. However, a fundamental challenge that persists is the lack of understanding regarding dimensional scaling, including thickness scaling and area scaling, of the functional properties and their heterogeneity in these films. In this work, excellent ferroelectricity and switching endurance are demonstrated in 4 nm-thick Hf0.5Zr0.5O2 (HZO) capacitors with molybdenum electrodes in capacitors as small as 65 nm × 45 nm in size. The HZO layer in these capacitors can be crystallized into the ferroelectric orthorhombic phase at the low temperature of 400 °C, making them compatible for back-end-of-line (BEOL) FE memories. With the benefits of thickness scaling, low operation voltage (1.2 V) is achieved with high endurance (>1010 cycles); however, a significant fatigue regime is noted. We observed that the bottom electrode, rather than the top electrode, plays a dominant role in the thickness scaling of HZO ferroelectric behavior. Furthermore, ultrahigh switched polarization (remanent polarization 2Pr ∼ 108 μC cm-2) is observed in some nanoscale devices. This study advances the understanding of dimensional scaling effects in HZO capacitors for high-performance FE memories.