High-performance Laser Research Articles

Practical ultra-low frequency noise laser system for quantum sensors

The laser’s frequency noise is crucial to the sensitivity of quantum sensors. Two commonly used methods to suppress the laser’s frequency noise are locking the laser to an atomic transition by the lock-in technique or to an ultra-low thermal expansion (ULE) glass cavity by the PDH technique. The former cannot suppress rapidly changing frequency noise and hardly meets the needs; the latter has powerful performance but a heightened cost. The lack of high-performance and low-cost laser noise suppression methods dramatically limits the practical application of quantum sensors. This work demonstrates that, in many quantum sensing applications such as the Rydberg atomic superheterodyne receiver, by cascade locking the laser to both the atomic transition and a low-cost (LC) cavity, the same performance as locking to the ULE cavity can be achieved. This work is significant in promoting the practical application of quantum sensors.

Indium-flush technique for C-band InAs/InP quantum dots

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy.

Enhancing high-order harmonic mode-locking in Er/Yb-Doped fiber lasers with sub-MHz fundamental frequency via optoacoustic resonance

We present an experimental study of a long Er/Yb-doped fiber ring laser with a low fundamental frequency of 0.678 MHz. By solely adjusting the quarter-wave plate in the polarization controller, we uncovered a series of reproducible laser generation regimes. Among these, multiple soliton bunches were harmonically mode-locked to low-order cavity harmonics (from the 3rd to the 8th). Notably, we also identified a regime featuring a stable soliton train harmonically mode-locked to the 472nd cavity harmonic at 320 MHz. This regime demonstrated exceptional harmonic mode-locking stability, with a supermode suppression level of 49 dB corresponding to the timing jitter on the order of a few picoseconds. We attribute this remarkable stability to an exact optoacoustic resonance between the laser repetition rate and the fiber eigen acoustic mode frequencies, specifically identified as R06 and TR2,15. These findings represent a significant advancement in high-performance fiber laser operation, particularly in enhancing the stability of lasers with sub-MHz fundamental frequencies capable to generate regular pulses with much higher repetition rates.

In-situ EBSD-DIC simulation of microstructure evolution of aluminum alloy welds

A comprehensive understanding of the dynamic evolution of weld microstructure under external loads can provide key insights for high-performance laser welding. A novel in-situ EBSD-DIC simulation method is introduced to study the microstructure evolution of laser welded aluminum alloys under uniaxial tensile action. An advanced crystal plastic finite element model (CPFEM) is developed, which combines the real microstructure, grain orientation and grain size effects. The results show that the dislocation density in columnar grain zone is higher than that in equiaxed grain zone. The continuous accumulation of dislocations in the columnar region results in a high work-hardening rate. This high work hardening rate enhances the plastic deformation capacity of the columnar crystal region, resulting in local strain concentration. Columnar zones are more prone to fracture because the high-strain region is a potential fracture site. In addition, low Angle grain boundary (LAGBs) is one of the reasons that the dislocation density of the columnar grain zone is higher than that of equiaxed grain zone during tensile process, which is conducive to dislocation slip of columnar grains. This study is a fundamental innovation in simulating the microstructure evolution of laser welding. This marks a major breakthrough in simulating the evolution of crystallographic features such as grain orientation, microstress and strain and dislocation density under external loads. This work can further provide practical guidance for “microstructure characteristics - mechanical property regulation”.

1.45 ps All-solid-state Q-switched mode-locked laser based on new material Bi2Te3/Sb2Te3

In this work, the improvement of material properties and the optimization of mode-locked devices are discussed. The lateral heterojunction Bi2Te3/Sb2Te3 is prepared by a simple solvothermal method to overcome the limitation of traditional single material and improve the nonlinear optics properties. Based on a Bi2Te3/Sb2Te3 saturable absorber, the stable passive Q-switched mode-locked operation with wavelength of 1064 nm is achieved in Nd: YVO4 crystal. When the pump power reaches 5.5 W, a Q-switched mode-locked output with a maximum power of 910 mW is obtained, and the corresponding optical–optical conversion efficiency is 16.5 %. The repetition frequency of Q-switched pulse envelopes is 83.81 kHz, the pulse width is 1.8 μs, and the pulse energy is 10.8 μJ. The repetition frequency of the mode-locked pulse in the Q-switched envelope is 312.8 MHz and the pulse width is 1.45 ps. This flexible tunable laser provides high peak power, narrow pulse width, and highly stable laser output, broadening its application prospects in high-performance pulsed lasers.

Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer

Abstract We report room-temperature ultraviolet-A (UV-A) stimulated emission from a multiple-quantum-well laser diode featuring a nano-porous bottom cladding layer on the GaN substrate. For a 1500×15 µm ridge-type edge-emitting laser, we achieved 372.8 nm emission under optical pumping, with a full-width-half-maximum (FWHM) of less than 2 nm and a threshold optical pumping power density less than 1.2 MW/cm2. The integration of a nano-porous cladding layer effectively minimizes lattice mismatch, enhances confinement factor and maintains electrical conductivity. This demonstration expands the potential for developing high-performance UV laser diodes on GaN substrates, overcoming limitations previously imposed by critical thickness contrasts.

NbSe2/PtTe2 heterostructures as saturable absorbers for mid-infrared pulsed solid-state lasers.

We have realized for the first time, to the best of our knowledge, a 2µm nanosecond solid-state passive Q-switched Tm:YAP laser based on a N b S e 2/P t T e 2 heterojunction saturable absorber. At an incident pump power of 12.69W, the Tm:YAP laser produces stable laser pulses with a minimum pulse width of 818ns, a maximum single-pulse energy of 15.48µJ, and a peak power of 18.93W at a repetition rate of 79.44kHz. The comparison results show enhanced saturable absorption performance compared to single N b S e 2 (1µs, 70.32kHz) and single P t T e 2 (1.31µs, 71.97kHz). The experimental results confirm that the N b S e 2/P t T e 2 heterojunction is a promising saturable absorption material that can be used to realize high-performance mid-infrared pulsed lasers. The resulting nanosecond 2µm Q-switched pulsed laser will play an important role in atmospheric monitoring, lidar, and other fields, and can provide a strong driving force.

High-performance 320-nm continuous-wave solid-state laser

For the first time, to our knowledge, we realized a high-performance 320-nm continuous-wave (CW) laser with a fiber-coupled blue laser diode as the pump source. A V-shaped folded cavity is constituted by three mirrors, with a Pr3+:LiYF4 (Pr:YLF) as the laser crystal and a LiB3O5 (LBO) as the frequency doubling crystal, respectively. Under an absorbed pump power of 19.5 W, the maximum 320-nm output power reaches 4.26 W, corresponding to an optical conversion efficiency of 21.8% and a root-mean-square (RMS) power fluctuation of 0.61%, which give the best results of a 320-nm CW laser up to now. The excellent performance will make this ultraviolet laser source very suitable for practical applications, including semiconductor detection, spectral analysis, microscopic imaging, and biotechnology.

Learned phase mask to protect camera under laser irradiation

The electro-optical imaging system works under focus conditions for clear imaging. However, under unexpected laser irradiation, the focused light with extremely high intensity can easily damage the imaging sensor, resulting in permanent degradation of its perceptual capabilities. With the escalating prevalence of compact high-performance lasers, safeguarding cameras from laser damage presents a formidable challenge. Here, we report an end-to-end method to construct the wavefront coding (WFC) imaging systems with simultaneous superior laser protection and imaging performance. In the optical coding part, we employ four types of phase mask parameterization methods: pixel-wise, concentric rings, linear combinations of Zernike bases, and odd-order polynomial bases, with parameters that are learnable. In the algorithm decoding part, a method combined of deconvolution module and residual-Unet is proposed to furthest restore the phase-mask-induced image blurring. The optical and algorithm parts are jointly optimized within the end-to-end framework to determine the performance boundary. The governing rule of the laser protection capability versus imaging quality is revealed by tuning the optimization loss function, and the system database is established for various working conditions. Numerical simulations and experimental validations both demonstrate that the proposed laser-protection WFC imaging system can reduce the peak single-pixel laser power by 99.4% while maintaining high-quality imaging with peak signal-to-noise ratio more than 22 dB. This work pioneers what we believe to be a new path for the design of laser protection imaging systems, with promising applications in security and autonomous driving.

Spatiotemporal dissipation dynamics: a route to high-beam-quality and high-peak-power spatiotemporal mode-locked fiber lasers

Spatiotemporal mode-locking (STML) opens a new avenue for implementing high-energy, high-peak-power mode-locked fiber oscillators. However, the compromised beam quality poses a critical limitation to their broader applications. This study presents a method for enhancing the beam quality of STML fiber lasers by employing spatiotemporal dissipation involving the quenching and reabsorption effects of multimode erbium-doped fibers. The proposed technique introduces spatiotemporal saturable absorption, achieving high beam quality without the stringent conditions required for Kerr beam self-cleaning (BSC). Integrating spatiotemporal dissipation with Kerr BSC, we demonstrate an all-anomalous-dispersion Er-doped STML fiber laser, which produces solitons with 6.7 nJ pulse energy (the intracavity solitons with 25.8 nJ pulse energy and >52.8kW peak power), sub-500 fs pulse duration, and beam quality with M x 2/M y 2=1.23/1.20. To our knowledge, it is a record peak power for 1.5 µm band soliton lasers. Additionally, the approach enables the generation of noise-like pulses with M x 2/M y 2=1.04/1.13. This work not only advances our understanding of spatiotemporal dissipation dynamics in STML fiber lasers, but also paves the way toward high-performance STML fiber lasers, rendering them very attractive for applications.

Directional growth and composition design of the highly disordered Yb3+ doped Ca(Gd1-xLux)AlO4 crystals for ultrafast lasers

The unique disordered structure of the CaGdAlO4 crystal, combined with its exceptional thermal and spectral properties, has contributed to its growing popularity in the field of ultrafast lasers. In this work, high quality Yb3+ doped CaGdAlO4 crystals were directionally grown by the rapid and cost-effective micro-pulling down method for the first time. The anisotropic analysis determined [100]-orientation as the optimal growth direction due to its superior spectral, thermal and continuous-wave laser properties compared to that of [001]-orientation. Based on the optimized [100]-orientation, two novel crystals, Yb3+:CaGd1-xLuxAlO4 (x = 0.05 and 0.1), were designed by incorporating Lu3+ into Gd3+ site. Benefiting from the enhanced structure disorder induced by Lu3+ co-doping, the Yb3+:CaGd1-xLuxAlO4 crystals demonstrated superior spectral and pulsed laser performance compared to that of Yb3+:CaGdAlO4, featuring a broader emission spectrum, narrower pulse duration and higher peak power. The utilization of anisotropy and composition design strategies effectively enhanced the spectral and pulsed laser properties, providing a feasible way for the optimization of compact and high-performance laser devices.

Effect of annealing on ion-beam-sputtered hafnium oxide thin films properties

HfO2 films are high laser damage-threshold and low-absorption thin-films that can be utilized for a broad range of optoelectronic and optical applications. In this study, HfO2 thin films were prepared via dual ion beam sputtering followed by annealing in the atmosphere at temperatures ranging from 200 to 700 °C. The optical properties, microstructure, film stress, and absorption loss of the HfO2 films at various annealing temperatures were then systematically characterized. The results revealed that the properties of the films were improved after annealing at temperatures below 500 °C. Specifically, at an optimal annealing temperature of 400 °C, the residual stress of the films was minimized close to zero and the absorption loss was as low as 1 ppm. However, at annealing temperatures reaching 600 °C, the films began to crystallize, leading to the deterioration of their optical properties. Optimizing the process parameters for HfO2 thin film deposition is crucial for developing the next generation of high-performance laser optics.

Introducing phosphoric acid to fluorinated polyimide towards high performance laser induced graphene electrodes for high energy micro-supercapacitors

Micro-supercapacitors (MSCs) have wide application prospects in microelectronic fields such as wearable electronics due to merits of stable performance, high safety and easy integration. However, the relatively low energy density of MSCs limits their practical application. In this context, phosphorus and fluorine co-doped laser-induced graphene (FP-LIG) microelectrodes were fabricated from fluorinated polyimide containing phosphoric acid by laser direct writing (LDW) method. The introduced phosphoric acid slows down the decomposition of –CF3 during the LDW process, resulting in much more ordered and stable pores; meanwhile, phosphorus entered the graphene lattice to replace some carbon atoms, forming a C3PO structure, which not only stabilizes the interface between the electrode and the electrolyte and therefore achieves an enlarged working potential of 1.4 V, but also increases the wettability of the electrode. Using FP-3-LIG microelectrodes and PVA/H2SO4 as the gel electrolyte, the assembled FP-3-MSC demonstrates significantly enhanced energy density, delivering an energy density of 10.40 μWh cm−2 (@0.09 mA cm−2), 2.7 times that of F-MSC and 346.7 times that of MSC. FP-3-MSC has excellent cyclic stability, displaying an areal capacitance retention rate of above 90 % after 10,000 long cycles. In addition, FP-3-MSC demonstrates excellent flexibility, indicating promising potential in the field of flexible wearable electronics.

Kilowatt-Level High-Efficiency Narrow-Linewidth All-Fiber Tm3+-Doped Laser

In this study, a kilowatt-level high-efficiency narrow-linewidth all-fiber Tm3+-doped continuous-wave laser operating at 1.95 μm is demonstrated. Benefitting from an advanced boost design of a two-stage main amplifier, it not only effectively manages heat dissipation resulting from the high pump-induced quantum defect but also realizes the controlled extraction of optical gain and improves the optical conversion efficiency. Finally, this laser system has realized an output power of 1018 W, a linewidth of 3.8 GHz, and a slope efficiency of 60.0% simultaneously. Moreover, a high optical signal-to-noise ratio of over 45 dB and excellent beam quality of M2 factors 1.19 are obtained. To the best of our knowledge, this represents the narrowest linewidth and highest slope efficiency achieved in a kilowatt-level Tm³⁺-doped fiber laser. Such a high-performance laser is ideally suited for mid-infrared generation and remote sensing applications.

Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers.

Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention in recent years due to their significant applications in high-speed optical communication, coherent detection, precision metrology, laser cooling, coherent transmission systems, light detection and ranging (LiDAR). However, research on electrically driven, high-power, and narrow-linewidth laser sources on TFLN platforms is still in its infancy. This review summarizes the recent progress on the narrow-linewidth compact laser sources boosted by hybrid TFLN/III-V semiconductor integration techniques, which will offer an alternative solution for on-chip high performance lasers for the future TFLN PIC industry and cutting-edge sciences. The review begins with a brief introduction of the current status of compact external cavity semiconductor lasers (ECSLs) and recently developed TFLN photonics. The following section presents various ECSLs based on TFLN photonic chips with different photonic structures to construct external cavity for on-chip optical feedback. Some conclusions and future perspectives are provided.

In-fiber waveguide-based mode-locker for generating diverse ultrafast pulses

The pursuit of an optimal mode-locker in nonlinear photonics is crucial for advancing high-performance laser technologies. Addressing the market demands and technical complexities in creating highly integrated and robust saturable absorbers, we present a femtosecond laser-inscribed in-fiber straight waveguide, seamlessly integrating a few-mode fiber segment into a single-mode fiber. This design reduces costs, simplifies fabrication, and enhances system integration and stability. As a saturable absorber, it enables nonlinear polarization rotation and multimode interference, which are essential for ultrafast pulse generation. It exhibits slight polarization-dependent loss and significant modulation depth, effectively inducing mode-locking. Based on the waveguide, 1.36 ps soliton pulses with a 2.9 nm bandwidth at a central wavelength of 1573 nm are initially achieved in an anomalous dispersion regime. Transitioning to the normal dispersion regime, at 190 mW pump power, the system produces Q-switched mode-locked pulses at 1574 nm. Increasing the pump power to 295 mW results in 712 fs noise-like pulses at 1572 nm, featuring an 8 nm bandwidth and 4.57 MHz repetition rate. This advancement in fiber lasers, facilitated by hybrid nonlinear effects in the waveguide, represents a significant milestone, promising for nonlinear optics and photonics due to its simplicity, cost-effectiveness, compactness, robustness, and high damage threshold.

165 MHz highly stable femtosecond Er:ZBLAN fiber laser operating at 2.8 µm.

Three-micrometer mid-infrared (MIR) femtosecond pulse sources with a high repetition rate (HRR) have potential applications in a number of fields such as biological imaging, optical frequency combs, and gas detection. In this paper, by optimizing the fiber length and the cavity structure, we demonstrated a highly stable, self-starting mode-locked fluoride fiber laser (MLFFL) with a fundamental repetition rate of ∼165 MHz and a signal-to-noise ratio (SNR) of 90 dB. As far as we know, this stands as the highest fundamental repetition rate ever acquired directly from an ultrafast MLFFL in the >2.5 µm MIR region. Stable 352-fs pulses at 2795 nm with an average output power of 392 mW and a low integrated relative intensity noise (RIN) of 0.018% [10 Hz, 10 MHz] were generated. The root mean square (RMS) power fluctuation is 0.17% over 2 h, which indicates excellent oscillator stability. This high-performance laser offers a practicable scheme both for scaling the repetition frequency in MIR MLFFLs and high-precision ultrafast applications at longer wavelengths.

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications.

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III-V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III-V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 μm, 70 μm, and 40 μm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO2 bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO2 bottom cladding layer effectively eliminates the influence of the substrate's larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs.

Generation and evolution dynamics of gain-guided dissipative solitons in a Tm-doped fiber laser

The generation of dissipative solitons from a mode-locked fiber laser can enhance emission energy, while the insertion of a bandwidth filter exposes the system to complexity. This study presents the first generation and evolution dynamics of gain-guided dissipative solitons (GGDSs) in Tm-doped fiber lasers exploiting the finite gain bandwidth. The results highlight the intricate interplay of finite gain bandwidth with dispersion and nonlinearity in governing the dynamics of GGDSs. An increase in pump power significantly broadens the emission spectrum, which in turn introduces the finite gain bandwidth to the generation of GGDSs. Consequently, linear chirp accumulates, promoting high-energy ultrashort pulse generation after external compression. However, an increase in round-trip group delay dispersion leads to a narrower spectral bandwidth, which can weaken the influence of the finite gain bandwidth, resulting in decreased soliton energy and broader pulse duration. The investigation of GGDS evolution dynamics within the cavity also provides us with a deeper insight into the characteristics of GGDS. Overall, this research offers important guidance for designing high-performance Tm-doped fiber lasers with simple structures that fully exploit the finite gain bandwidth.

Exceptionally High-glum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host-Guest Supramolecular Microcrystal.

Circularly polarized (CP) lasers hold tremendous potential for advancing spin information communication and display technologies. Organic materials are emerging candidates for high-performance CP lasers because of their abundant chiral structures and excellent gain characteristics. However, their dissymmetry factor (glum) in CP emission is typically low due to the weak chiral light matter interactions. Here, we presented an effective approach to significantly amplifying glum by leveraging the intrinsic 2D-chiroptical response of an anisotropic organic supramolecular crystal. The organic complex microcrystal was designed to exhibit large 2D-chiroptical activities through strong coupling interactions between their remarkable linear birefringence (LB) and high degree of fluorescence linear polarization. Such 2D-chiroptical response can be further enhanced by the stimulated emission resulted from an increased degree of linear polarization, yielding a nearly pure CP laser with an exceptionally high glum of up to 1.78. Moreover, exploiting the extreme susceptibility of LB to temperature, we demonstrate a prototype of temperature-controlled chiroptical switches. These findings offer valuable insights for harnessing organic crystals to facilitate the development of high-performance CP lasers and other chiroptical devices.