High-performance Electro-optic Modulators Research Articles

Hybrid graphene anti-resonant fiber with tunable light absorption.

Controlling the output light-intensity and realizing the light-switch function in hollow-core anti-resonant fibers (HC-ARFs) is crucial for their applications in polarizers, lasers, and sensor systems. Here, we theoretically propose a hybrid light-intensity-tunable HC-ARF deposited with the sandwiched graphene/hexagonal boron nitride/graphene based on the typical six-circular-tube and the nested structures. Changing the external drive voltage from 12.3 to 31.8 V, the hybrid HC-ARF experiences a high-low alterative attenuation coefficient with a modulation depth 3.87 and 1.91 dB/cm for the six-circular-tube and nested structures respectively, serving as a well-performance light-switch at the optical communication wavelength of 1.55 µm. This response is attributed to the variation of the Fermi level of graphene and is obviously influenced by the core size, fiber length, and the number of graphene and hBN layers. Moreover, one attenuation dip of the modulation depth was found because of the epsilon-near-zero effect in graphene. Our design provides a feasible paradigm for integrating graphene with anti-resonant fibers and high-performance electro-optic modulators.

Design and fabrication of indium tin oxide for high performance electro-optic modulators at the communication wavelength

In recent years, transparent conductive oxides(TCO) based electro-optic modulators has garnered significant attention due to its epsilon-near-zero(ENZ) effect to enhance the local optical field and produce a large refractive index change in the vicinity of ENZ wavelength, thereby enabling substantial optical field modulation at micrometer size. The modulators manipulate the light field by altering the carrier concentration in TCO through an electric field. Therefore, the modulator's performance is closely related to the TCO's material behavior. In this paper, the effect of carrier concentration and mobility of indium tin oxide(ITO) on the modulation efficiency, depth and bandwidth was analyzed and it is found that ITO with the carrier concentration near 1 × 1020 cm−3 and mobility as high as 80 cm2/Vs is beneficial to the electro-optic modulators with large modulation depth and bandwidth. Specifically, our research shows that the carrier concentration and mobility of ITO films can be tunned over a wide range from 2.2 × 1019cm−3 to 7.7 × 1020cm−3 and 7.2 cm2/Vs to 82.3 cm2/Vs respectively, by changing doping concentration, deposition conditions and annealing parameters. As a result, ITO film integrated on a 3.5-μm-long silicon waveguide with an MOS structure can achieves a high modulation bandwidth of over 40 GHz at the optical communication wavelength.

Low-power, high-performance electro-optic modulator based on MoS2-SiN integrated waveguide

Low-power, high-performance electro-optic modulator based on MoS₂-SiN integrated waveguide

High-performance etchless lithium niobate layer electro-optic modulator enabled by quasi-BICs.

A facile strategy is proposed for a high-performance electro-optic modulator with an etchless lithium niobate (LN) layer assisted by the silicon resonator metasurface, which pioneers the way to engineer an ultra-sharp spectral line shape via the excitation of quasi-bound states in the continuum (BICs). Meanwhile, strong out-of-plane electric/magnetic fields within the proximity area to the electro-optic layer lead to ultra-sensitive modulations. As a result, only a slight voltage change of 0.2 V is needed to fully shift the resonances and then realize switching modulation between the "off" and "on" states. The findings pave new, to the best of our knowledge, insights in reconfiguration of spatial optical fields and offer prospects for functional optoelectronic devices.

High performance electro-optic modulator based on thin-film lithium niobate

High performance electro-optic modulator based on thin-film lithium niobate

Integrated electro-optic modulators in x-cut lithium niobate thin film

Integrated optics is poised to revolutionize several data communication applications. The development of high performance electro-optic modulators is essential for the technology to be viable. In this paper, single-mode electro-optic modulators in x-cut lithium niobate thin film are designed, simulated, and analyzed. The single-mode conditions of lithium niobate ridge waveguides are analyzed in detail. The design parameters of Y-branch and separation distances between electrodes and ridge waveguides are optimized. The half-wave voltage of the electro-optic modulator with device lengths of 10 mm is determined. The half-wave voltage-length product is about 2.2 V·cm indicating the efficient electric-optical modulation. This study is helpful for understand of electro-optic modulator structures in lithium niobate thin film, as well as for the fabrication of high-performance and multifunctional electro-optic modulation devices.