Higher Order Lateral Modes Research Articles

Improvement of beam quality of high-power edge-emitting lasers using inhomogeneous waveguides

Inhomogeneous waveguides with corrugations have the potential to increase the fundamental mode brightness of edge-emitting lasers as compared to straight waveguides. The corrugations partly suppress the high-order lateral modes of the lasers. The impact of the shape and size of rectangular and triangular types of corrugations on the lasing performance is compared for the first time, and an optimized design is presented. This concept of introducing corrugations is investigated for conventional edge-emitting lasers, as well as high-brightness vertical broad-area edge-emitting (HiBBEE) lasers. The corrugated HiBBEE lasers provide an almost two times larger brightness than the reference lasers.

Loss-tailoring single-mode high-power supersymmetric lasers.

Diode lasers with high beam quality and high power have many promising applications. However, high beam quality is always in conflict with high power. In this Letter, we theoretically and experimentally confirm the mode instability property of supersymmetric structures at higher operating currents. Meanwhile, we propose a loss-tailoring diode laser based on a supersymmetric structure, which enables the higher-order lateral modes to obtain higher losses, raises the excitation threshold of the higher-order lateral modes, and achieves a stable fundamental-lateral-mode output at higher current operation. The device obtained a quasi-single-lobe lateral far-field distribution with the full width at half maximum (FWHM) of 7.58° at 350 mA under room temperature, which is a 65% reduction compared to the traditional Fabry-Perot (FP) diode lasers. Moreover, the M2 of 2.181@350 mA has an improvement of about 37% over traditional FP and supersymmetric structure lasers.

Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs

Abstract Power scaling in conventional broad-area (BA) lasers often leads to the operation of higher-order lateral modes, resulting in a multiple-lobe far-field profile with large divergence. Here, we report an advanced sawtooth waveguide (ASW) structure integrated onto a wide ridge waveguide. It strategically enhances the loss difference between higher-order modes and the fundamental mode, thereby facilitating high-power narrow-beam emission. Both optical simulations and experimental results illustrate the significant increase in additional scattering loss of the higher-order modes. The optimized ASW lasers achieve an impressive output power of 1.1 W at 4.6 A at room temperature, accompanied by a minimal full width at half maximum lateral divergence angle of 4.91°. Notably, the far-field divergence is reduced from 19.61° to 11.39° at the saturation current, showcasing a remarkable 42% improvement compared to conventional BA lasers. Moreover, the current dependence of divergence has been effectively improved by 38%, further confirming the consistent and effective lateral mode control capability offered by our design.

Mode analysis and measurement of single-emitter blue diode lasers.

Recent developments in blue diode lasers have been hindered by the challenge of balancing high power with beam quality. Typically, high-power blue diode lasers exhibit low beam quality due to the output of multiple longitudinal and lateral modes. A promising solution to this problem is to control and shape the blue beam mode output from a single emitter. To achieve this, it is key to have full knowledge of the properties of the output mode under various conditions. In this paper, we explore the mode characteristics of an InGaN single-emitter laser diode that has a typical wavelength of 447nm (wavelength range: 440-455nm). We measure and analyze the near-field mode using the box model, finding that the near-field mode excited by the blue diode laser overlapped near the threshold current of 0.32A. The p=2 order lateral mode of longitudinal mode groups 3 and 4 overlapped with the p=4 order mode of adjacent longitudinal mode groups. Through a Fourier transform of the near-field mode, we obtain the far-field mode and reveal a spatial law of mode distribution that is similar to the near-field mode. As the current is gradually increased and approaches the rated current of the laser diode, the near-field mode continuously has new longitudinal mode groups added to the long-wavelength side of the starting group. We observe an increase in the number of longitudinal mode groups and high-order lateral modes, leading to more mode overlaps. Additionally, we observe a gradual shift in the peak energy of the modes to the long-wavelength side. This study reveals the mode characteristics of broad-area blue diode lasers, providing crucial information to achieve high-quality laser beams in such systems.

High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth

We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical gain, a group of periodic slots etched near the front facet to suppress the extra longitudinal modes and achieve a narrow linewidth, and a pair of passive superpartner waveguides located on both sides to filter out the high-order lateral modes in the broad waveguide. The device measured under the temperature of 25 °C shows an output power of 113 mW, a single-lobe lateral far-field distribution with the full width at half maximum of 7.8°, a peak wavelength of 1559.7 nm with the side-mode suppression ratio of 48.5 dB, and an intrinsic linewidth of 230 kHz at the bias current of 800 mA. The device is a promising candidate for cost-effective light sources for coherent communication systems and LiDARs.

High-power distributed feedback lasers with high-order surface curved gratings.

A novel, to the best of our knowledge, broad-area distributed feedback laser with high-order surface curved gratings has been fabricated based on standard near ultraviolet lithography. The characteristics of increasing output power and mode selection are achieved simultaneously by using a broad-area ridge as well as an unstable cavity structure composed of curved gratings and a high-reflectivity coated rear facet. Suppression of high-order lateral modes is realized by setting current injection/non-injection regions and asymmetric waveguides. This DFB laser emitting around 1070 nm has achieved a spectral width of 0.138 nm and a maximum output power of 915 mW kink-free optical power. The threshold current and side-mode suppression ratio of the device are 370 mA and 33 dB, respectively. The simple manufacturing process and stable performance give this high-power laser broad application prospects in the fields of light detection and ranging, laser pumps, optical disk access, etc.

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.

Mode competition in broad-ridge-waveguide lasers

The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study of the lateral-mode competition two complementary simulation tools are applied, representing different classes of approximations. The first tool bases on a completely incoherent superposition of mode intensities and disregards longitudinal effects like spatial hole burning, whereas the second tool relies on a simplified carrier transport and current flow. Both tools yield agreeing power-current characteristics that fit the data measured for 5–23 µm wide ridges. Also, a similarly good qualitative conformance of the near and far fields is found. However, the threshold of individual modes, the partition of power between them at a given current, and details of the near and far fields show differences. These differences are the consequence of a high sensitivity of the mode competition to details of the models and of the device structure. Nevertheless, it can be concluded concordantly that the brightness rises with increasing ridge width irrespective of the onset of more and more lateral modes. The lateral brightness at 10 MW cm−2 power density on the front facet of the investigated laser with widest ridge (23 µm) is comparable with best values known from much wider broad-area lasers. In addition, we show that one of the simulation tools is able to predict beam steering and coherent beam coupling without introducing any phenomenological coupling coefficient or asymmetries.

Beam waist shrinkage of high-power broad-area diode lasers by mode tailoring.

A new approach was proposed and its role in improvement of the beam quality of high-power broad-area diode lasers was demonstrated, in which a composite arrow array and trench microstructure was used to suppress the beam waist and tailor the high order lateral modes. The beam waist shows a special shrinkage with increasing injection current resulting from the combined effect of mode tailoring and the thermal lens effect. A 58% improvement in lateral beam parameter product was realized compared with conventional broad-area diode lasers.

Loss tailoring of high-power broad-area diode lasers.

Broad-area diode lasers (BALs) with high power are highly desirable for a variety of applications. However, such lasers suffer from strongly deteriorated beam quality due to multimode behavior in the lateral direction. In this Letter, we present an approach to flexibly tailor the optical loss of different-order lateral modes by etching micro-holes on the laser mesa with controlled position and numbers. Through arranging the micro-holes at the peak positions of high-order lateral modes with an increasing number from the mesa center to both edges, high-order modes are suppressed due to a larger propagation loss than the fundamental mode. As a result of enhanced mode discrimination, we demonstrate that this technique provides a greatly improved beam quality and about two times higher brightness for 100μm wide BAL, while maintaining high power and slope efficiency output.

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

High beam quality broad-area diode lasers by spectral beam combining with double filters

A modified spectral beam combining (SBC) approach based on double asymmetrical filters was proposed. By using this scheme, the high-order lateral modes at the edge of the far-field pattern can be suppressed in the external cavity, and the beam quality in the slow-axis direction was improved from 16.1 to 13.4 compared to the conventional SBC. In the meanwhile, the electrical-to-optical efficiency from the modified SBC was more than 40% with an output power of 34.1 W, which is similar to that of the conventional SBC.

Дискриминация поперечных мод в торцевых полупроводниковых лазерах с пространственной модуляцией отражения выходных зеркал

AbstractA post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides

High-brightness vertical broad-area edge-emitting (HiBBEE) semiconductor lasers in the 1060 nm wavelength range with excellent beam quality in both lateral and vertical directions are presented. An approach to modify the thresholds of the transverse lateral modes of ridge-waveguide (RW) lasers is investigated. It has been experimentally shown that inhomogeneities in both sides of the ridges increase optical losses of the higher-order lateral modes as compared to the fundamental mode. The resulting enhancement in the contrast of the optical losses favors the emission of the fundamental mode and improves the beam quality. Reference RW HiBBEE lasers with a 15 μm wide conventional ridge and a 2.0 mm long cavity provide laterally multi-lateral mode emission which is typical for RW lasers with such wide and homogeneous ridges. On the other hand, RW HiBBEE lasers with triangular-shaped corrugations in both sides of 15 μm wide ridges provide single-lateral mode emission across a wide current range and improve the lateral M2 factor by more than a factor of 2 in the investigated current range. The corrugated RW HiBBEE lasers provide an almost 2 times higher brightness than the reference RW lasers.

Distributed feedback interband cascade lasers with top grating and corrugated sidewalls

Distributed feedback (DFB) interband cascade lasers (ICLs) with a 1st order top surface grating were designed and fabricated. Partially corrugated sidewalls were implemented to suppress high order lateral modes. The DFB ICLs have 4 mm long and 4.5 μm wide ridge waveguides and are mounted epi-up on AlN submounts. We demonstrated a continuous-wave (CW) DFB ICL, from a first wafer which has a large detuning of the gain peak from the DFB wavelength, with a side mode suppression ratio of 30 dB. With proper matching of grating feedback and the gain peak wavelength for the second wafer, a DFB ICL was demonstrated with a maximum CW output power and a maximum wall plug efficiency reaching 42 mW and 2%, respectively, at 25 °C. The lasing wavelengths of both lasers are around 3.3 μm at 25 °C.

High-Efficiency Broad-Ridge Waveguide Lasers

Highly efficient single-spatial mode lasers with wattlevel output power in the 9xx-nm wavelength range are of great interest for a variety of applications. We experimentally investigate the influence of the mesa widths on the electrooptical properties of ridge-waveguide lasers, based on an extreme double asymmetric epitaxial structure. These properties are, for example, the conversion efficiency and the maximum power of single-lateral mode operation (kink power). At an output power of almost 1 W, single-lateral mode operation with the highest efficiency of 60% was achieved with a 10-μm ridge-width laser. The highest peak efficiency of 62% and the highest output power of 2.7 W with still 59% efficiency were yielded by a laser with a ridge width of 15 μm, at the expense of a slightly deteriorated beam quality due to the involvement of a higher order lateral mode. The kink power of the 10-μm-ridge laser can be further increased by decreasing the front facet reflectivity from 2.5% to 0.5%.

A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm

Vertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum γ factor (λ/2 design) and suppression of optical power beyond the aperture. A VCSEL with two coupled cavities provides additional sharp growth of the loss of high-order lateral modes by leakage to the oxidized region and provides single-mode laser generation for an aperture diameter of up to 5 μm. Single-mode antiwaveguiding VCSELs provide ultrafast data transmission with a rate of up to 160 Gbit/s. The structure in which the active medium is placed in the lower distributed Bragg reflector and the cavity and the upper distributed Bragg reflector are dielectric, reducing the temperature shift of the radiation wavelength by a factor of 2 (to ∼0.03 nm/K).

Дизайн и новая функциональность антиволноводных вертикально-излучающих лазеров на длину волны 850 nm

AbstractVertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum γ factor (λ/2 design) and suppression of optical power beyond the aperture. A VCSEL with two coupled cavities provides additional sharp growth of the loss of high-order lateral modes by leakage to the oxidized region and provides single-mode laser generation for an aperture diameter of up to 5 μm. Single-mode antiwaveguiding VCSELs provide ultrafast data transmission with a rate of up to 160 Gbit/s. The structure in which the active medium is placed in the lower distributed Bragg reflector and the cavity and the upper distributed Bragg reflector are dielectric, reducing the temperature shift of the radiation wavelength by a factor of 2 (to ∼0.03 nm/K).

Lateral mode control in edge-emitting lasers with modified mirrors

We present a study on lateral mode control in edge-emitting lasers with profiled mirror reflectivity. The object was to eliminate high-order lateral modes in conventional ridge-waveguide InAs/InGaAs QD (quantum dot) lasers with the stripe width of 10 μm. We have used a FIB (focused ion beam) technique to selectively etch windows in the AR (anti-reflection) facet coatings in order to introduce extra mirror losses for the high order modes. This approach allowed us to eliminate the first-order mode lasing without deterioration of the laser parameters. We suppose that further optimisation of the laser heterostructure and window designs may lead to a pure lateral single-mode lasing in the broadened ridge waveguides.

Lateral Modes in Quantum Cascade Lasers

We will examine the waveguide mode losses in ridge-guided quantum cascade lasers. Our analysis illustrates how the low-loss mode for broad-ridge quantum cascade lasers (QCLs) can be a higher-order lateral waveguide mode that maximizes the feedback from the sloped ridge-wall regions. The results are in excellent agreement with the near- and far-field data taken on broad-ridge-guided quantum cascade lasers processed with sloped ridge walls.